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Ultrawide-bandgap (4.9 eV) β-Ga2O3 material possesses exceptional properties such as a high critical-breakdown field (~8 MV/cm) and robust chemical and thermal stability. However, due to the challenges in the growth of p-type β-Ga2O3, the preparation of homojunction devices is difficult. Therefore, the utilization of heterojunctions based on β-Ga2O3 provides a viable approach for fabricating ultraviolet photodetectors. Poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS), a p-type organic polymer material, exhibits high transparency in a 250–700 nm wavelength range. Additionally, its remarkable conductivity (>1000 S/cm), high hole mobility (1.7 cm2·V–1·s–1), and excellent chemical stability make it an outstanding candidate for serving as a hole transport layer. Consequently, the combination of p-type PEDOT:PSS with n-type β-Ga2O3 in a heterojunction configuration provides a promising way for developing PN junction optoelectronic devices. In this study, a β-Ga2O3 microsheet with dimensions: 4 mm in length, 500 μm in width, and 57 μm in thickness, is successfully exfoliated from a β-Ga2O3 single crystal substrate by using a mechanical exfoliation technique. Subsequently, a PEDOT:PSS/β-Ga2O3 organic/inorganic p-n heterojunction UV photodetector is fabricated by depositing the PEDOT:PSS organic material onto a side of the β-Ga2O3 microsheet. The obtained device exhibits typical rectification characteristics, sensitivity to 254-nm ultraviolet light, and impressive self-powering performance. Furthermore, the heterojunction photodetector demonstrates exceptional photosensitive properties, achieving a responsivity of 7.13 A/W and an external quantum efficiency of 3484% under 254-nm UV light illumination (16 μW/cm2) at 0 V. Additionally, the device exhibits a rapid photoresponse time of 0.25/0.20 s and maintains good stability and repeatability over time. Notably, after a three-month duration, the photodetection performance for 254nm UV light detection remained unchanged, without any significant degradation. This in-depth research provides a novel perspective and theoretical foundation for developing innovative UV detectors and paving the way for future advancements in the field of optoelectronics. -
Keywords:
- β-Ga2O3 /
- PEDOT:PSS /
- heterojunction /
- UV photodetector
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图 1 PEDOT:PSS/β-Ga2O3紫外光电探测器的制作流程示意图
Figure 1. Schematic diagram of the preparation processes of the PEDOT:PSS/β-Ga2O3-based UV photodetector.
图 2 (a)单根β-Ga2O3微米片的SEM图; (b)单根PEDOT:PSS/β-Ga2O3异质结的SEM图
Figure 2. The SEM images for (a) the single β-Ga2O3 microsheet and (b) single PEDOT:PSS/β-Ga2O3 heterojunction.
图 3 (a)器件在黑暗和254 nm光照下的I-V曲线, 插图为黑暗条件下器件的I-V曲线; (b) Ag-PEDOT:PSS-Ag的I-V曲线; (c) Ag-β-Ga2O3-Ag的I-V曲线
Figure 3. (a) I-V curves of devices under dark and 254 nm light illumination, inset shows the I-V curve of the device in dark; (b) I-V curve of Ag-PEDOT:PSS-Ag; (c) I-V curve of Ag-β-Ga2O3-Ag.
图 4 零偏压下, 器件在不同光功率密度下的响应I-t曲线
Figure 4. I-t curves of the device under various light intensity at 0 V bias.
图 5 单个周期的响应-恢复时间曲线
Figure 5. Response-recovery time curve of device for a single cycle.
图 6 器件的响应度和EQE随光功率密度的变化关系图
Figure 6. Responsivity and EQE under various light intensities.
图 7 3个月后, 器件在0 V偏压下的时间响应
Figure 7. Time response of the device at 0 V bias after retested three months.
图 8 PEDOT:PSS/β-Ga2O3异质结光电器件在254 nm和0 V偏压下的能带图
Figure 8. Schematic energy-band diagram of PEDOT:PSS/β-Ga2O3 heterojunction photodetector at 254 nm UV light illumination under zero bias.
表 1 自供电型无机/有机日盲紫外探测器的性能参数比较
Table 1. Performance comparison of inorganic/organic self-powered solar blind UV detectors.
Structure R/ (mA·W–1) Light intensity/(μW·cm–2) Rise/decay time EQE/% Ref. PEDOT:PSS/Ga2O3 microwire 3.25×103 16 0.25/0.20 s 1591 This work Ppy-PEDOT:PSS/GaN 1.1×103 6.56×103 0.25/0.28 s 4.0×105 [23] Ga2O3/spiro-OMeTAD 65 1 2.98/28.49 μs 32 [24] PEDOT:PSS/Ga2O3 (Bulk) 37 1.5×10–3 9/9 ms 18 [25] PEDOT:PSS/ Ga2O3/Si 29 12 60/88 ms 15 [26] ZnO/PVK/PEDOT/CNT 9.96 210 1.5/6 s ~0.6 [27] 
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