-
Reverse-Conducting Lateral Insulated Gate Bipolar Transistor (RC-LIGBT) with freewheeling diode integrated in the body by introducing n+ anode can realize the reverse conduction and optimize the turn-off characteristics of the device, which is a promising device in power integrated circuits. In this paper, a novel RC-LIGBT with Electron-controlled Gate (EG) and Separated Short-Anode (SSA) is proposed and investigated by TCAD simulation, which can achieve low on-state voltage drop (Von) and low turn-off loss (Eoff) at the same time. The EG structure of p-n-n+-p (p+ region/ n-type silicon region/n-type barrier layer/p+ region) is adopted, the gate and anode electrodes are connected by the EG structure. In the forward conduction state, a high-density electron accumulation layer is formed on the surface of the drift region by EG structure, which greatly reduces the Von of the device. At the same time, the use of the SSA structure can also optimize the Eoff of the device by forming an additional electron extraction channel. In addition, based on the EG structure, a low-doping p-drift can be combined with the SSA structure to simply achieve reverse-conduction and snapback-free characteristics. What's more, the EG structure and the SSA structure can complement each other. On the one hand, the high-density electron accumulation layer formed by EG structure compensates for the weakened conductance modulation effect caused by the SSA structure. On the other hand, the electron extraction channel of the SSA structure enables a large number of accumulated electrons to be removed quickly. The simulation results show that the proposed device has an excellent tradeoff relationship between Von and Eoff, the Von is 1.16V, which is 55% lower than that of SSA LIGBT, and the Eoff is 0.099mJ/cm2, which is 38.5% and 94.7% lower than that of SSA LIGBT and conventional LIGBT, respectively.
-
Keywords:
- Carrier accumulation /
- RC-LIGBT /
- on-state voltage drop /
- snapback voltage
-
[1] Sakurai N, Mori M, Yatsuo T 1990 Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs Tokyo, Japan, April 4-6, 1990 p66
[2] Disney D, Letavic T, Trajkovic T, Terashima T, Nakagawa A 2017 IEEE Transactions on Electron Devices 64 659
[3] Letavic T, Petruzzello J, Claes J, Eggenkamp P, Janssen E, van der Wal A 2006 IEEE International Symposium on Power Semiconductor Devices and IC's Naples, Italy, June 4-8, 2006 p1
[4] Gu Y, Ma J, Zhang L, Wei J X, Li S, Liu S Y, Zhang S, Zhu J, Sun W F 2024 IEEE Transactions on Electron Devices 71 381
[5] Hara K, Wada S, Sakano J, Oda T, Sakurai K, Yamashita H, Utsumi T 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's Waikoloa, Hawaii, USA, June 15-19, 2014 p418
[6] Gough P A, Simpson M R, Rumennik V 1986 International Electron Devices Meeting Los Angeles, CA, USA, December 7-10, 1986 p218
[7] Sin J K O,Mukherjee S 1991 IEEE Electron Device Letters 12 45
[8] Duan S, Qiao M, Mao K, Zhong B, Jiang L, Zhang B 2010 IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai, China, November 1-4, 2010 p897
[9] Simpson M R 1991 IEEE Transactions on Electron Devices 38 1633
[10] Chen W S, Zhang B, Li Z J 2010 IEEE Electron Device Letters 31 467
[11] Sun L C, Duan B X, Yang Y T 2021 IEEE Transactions on Electron Devices 68 2408
[12] Chul J H, Byeon D S, Oh J K, Han M K, Choi Proc Y I. 2002 12th International Symposium on Power Semiconductor Devices & ICs Toulouse, France, May 22-25, 2002 p149
[13] Zhu J, Zhang L, Sun W F, Chen M, Zhou F, Zhao M N, Shi L X, Gu Y, Zhang S 2016 IEEE Transactions on Electron Devices 63 2003
[14] Huang L H, Luo X R, Wei J, Zhou K, Deng G Q, Sun T, Ouyang D F, Fan D, Zhang B 2017 IEEE Transactions on Electron Devices 64 3961
[15] Hardikar S, Tadikonda R, Sweet M, Vershinin K, Narayanan E M S 2003 IEEE Electron Device Letters 24 701
[16] Sun L C, Duan B X, Wang Y D, Yang Y T 2019 IEEE Transactions on Electron Devices 66 2675
[17] Duan B X, Sun L C, Yang Y T 2019 IEEE Electron Device Letters 40 63
[18] Liu S Y, Zhang Y, Zhang Z J, Inuishi M 2022 6th IEEE Electron Devices Technology & Manufacturing Conference Oita, Japan, March 6-9, 2022 p204
[19] Xia Y, Chen W J, Liu C, Sun R Z, Li Z J, Zhang B Zhang 2022 IEEE Transactions on Electron Devices 69 6956
[20] Xia Q F 2007 Ph. D. Dissertation (Zhejiang: Zhejiang University) (in Chinese) [夏庆锋 2007 博士学位论文 (浙江:浙江大学)]
[21] Bruel M, Aspar B, Charlet B, Maleville C, Poumeyrol T, Soubie A, Auberton-Herve A J, Lamure J M, Barge T, Metral F, Trucchi S 1995 IEEE International SOI Conference Proceedings Tucson, AZ, USA, October 3-5,1995 p178
Metrics
- Abstract views: 96
- PDF Downloads: 2
- Cited By: 0