-
Compared to the classical Fourier’s law, the phonon hydrodynamic model has demonstrated significant advantages in describing ultrafast phonon heat transport at the nanoscale. The Gate-All-Around FieldEffect Transistor (GAAFET) greatly optimizes its electrical performance through its three-dimensional channel design, but its nanoscale characteristics also lead to challenges such as self-heating and localized overheating. Therefore, it is of great significance to study the internal heat transport mechanism of GAAFET devices to obtain the thermal process and heat distribution characteristics. Based on this, this paper conducts theoretical and numerical simulation analyses on the phonon heat transfer characteristics within nanoscale GAAFET devices. Firstly, based on the phonon Boltzmann equation, the phonon hydrodynamic model and boundary conditions are rigorously derived, establishing a numerical solution method based on finite elements. For the novel GAAFET devices, the effects of factors such as surface roughness, channel length, channel radius, gate dielectric, and interface thermal resistance on their heat transfer characteristics are analyzed. The research results indicate that the larger the surface roughness, the smaller the channel length and the channel radius, the larger the interface thermal resistance leads to the higher hot spot peak temperature. The non-Fourier heat analysis method based on the phonon hydrodynamic model and temperature jump condition within the continuous medium framework constructed in this paper can accurately predict the non-Fourier phonon heat conduction process inside GAAFET and reveal the mechanisms of resistive scattering and phonon/interface scattering. This work provides important theoretical support for further optimizing the thermal reliability design of GAAFET, improving its thermal stability, and operational performance.
-
Keywords:
- GAAFET /
- phonon hydrodynamic model /
- temperature jump /
- non-Fourier thermal analysis
-
[1] Liu S Q, Li Q H, Yang C, Yang J, Xu L, Xu L Q, Ma J C, Li Y, Fang S B, Wu B C, Dong J C, Yang J B, Lu J 2022 Phys. Rev. Appl. 18 054089
[2] Yoon J S, Rim T, Kim J, Meyyappan M, Baek C K, Jeong Y H 2014 Appl. Phys. Lett. 105 102105
[3] Zhang Q Z, Yin H X, Meng L K, Yao J X, Li J J, Wang G L, Li Y D, Wu Z H, Xiong W J, Yang H, Tu H L, Li J F, Zhao C, Wang W W, Ye T C 2018 IEEE Electron Device Lett. 39 464
[4] Belkhiria M, Echouchene F, Jaba N, Bajahzar A, Belmabrouk H 2021 IEEE Trans. Electron Devices 68 954
[5] Belkhiria M, Alyousef H A, Chehimi H, Aouaini F, Echouchene F 2022 Thin Solid Films 758 139423
[6] Rezgui H, Mukherjee C, Wang Y, Deng M, Kumar A, Müller J, Larrieu G, Maneux C 2023 IEEE Trans. Electron Devices 70 6505
[7] Myeong I, Son D, Kim H, Shin H 2019 IEEE Trans. Electron Devices 66 4631
[8] Chhabria V A, Sapatnekar S S 2019 In 20th International Symposium on Quality Electronic Design (ISQED). pp 235–240
[9] Alvarez P T 2018 (Springer)
[10] Yang N, Zhang G, Li B W 2010 Nano Today 5 85
[11] Guo Y Y, Wang M R 2016 J. Comput. Phys. 315 1
[12] Ran X, Guo Y Y, Wang M R 2018 Int. J. Heat Mass Tran 123 616
[13] Zhang C, Guo Z L 2021 Int. J. Heat Mass Tran 181 121847
[14] Cattaneo C 1948 Atti Sem. Mat. Fis. Univ. Modena 3 83
[15] Vernotte P 1958 Comptes rendus 246 3154
[16] Tzou D Y 1995 J. Heat Transfer. 117 8
[17] Xu M T, Wang L Q 2005 Int. J. Heat Mass Tran 48 5616
[18] Chen G 2002 J. Heat Transfer 124 320
[19] Cao B Y, Guo Z Y 2007 J. Appl. Phys. 102 053503
[20] Dong Y, Cao B Y, Guo Z Y 2011 J. Appl. Phys. 110 063504
[21] Guyer R A, Krumhansl J A 1966 Phys. Rev. 148 766
[22] Guyer R A, Krumhansl J A 1966 Phys. Rev. 148 778
[23] Alvarez F X, Jou D, Sellitto A 2009 J. Appl. Phys. 105 014317
[24] Hua Y C, Cao B Y 2014 Int. J. Heat Mass Tran 78 755
[25] Kaiser J, Feng T L, Maassen J, Wang X F, Ruan X L, Lundstrom M 2017 J. Appl. Phys. 121 044302
[26] Guo Y Y, Wang M R 2018 Phys. Rev. B 97 035421
[27] Beardo A, Hennessy M G, Sendra L, Camacho J, Myers T G, Bafaluy J, Alvarez F X 2020 Phys. Rev. B 101 075303
[28] Rezgui H, Nasri F, Ali A B H, Guizani A A 2020 IEEE Trans. Electron Devices 68 10
[29] Rezgui H, Nasri F, Ali A B H, Guizani A A 2021 Therm. Sci. Eng. Prog. 25 100938
[30] Chen G 2005 Nanoscale energy transport and conversion: a parallel treatment of electrons, molecules, phonons, and photons (Oxford university press)
[31] Peierls R E 1996 Quantum theory of solids (Clarendon Press)
[32] Chen N X, Sun B H 2017 Chin. Phys. Lett. 34 020502
[33] Aissa M F B, Nasri F, Belmabrouk H 2017 IEEE Trans. Electron Devices 64 5236
[34] Sellitto A, Carlomagno I, Jou D 2015 Proc. R. Soc. A 471 20150376
[35] Beardo A, Calvo-Schwarzwälder M, Camacho J, Myers T, Torres P, Sendra L, Alvarez F, Bafaluy J 2019 Phys. Rev. Appl. 11 034003
[36] Zhang Z M 2020 Nano/microscale heat transfer (Springer)
[37] Mahajan S S, Subbarayan G, Sammakia B G 2011 IEEE Trans. Compon., Packag., Manuf. Technol. 1 1132
[38] Chen G F, Hu B Y, Jiang Z L, Wang Z L, Tang D W 2023 Int. J. Heat Mass Tran 202 123676
[39] Lai J H, Su Y L, Bu J H, Li B H, Li B, Zhang G H 2020 IEEE Trans. Electron Devices 67 4060
[40] The Chinese Academy of Sciences 2022 Thermal Management of Electronic Devices. p 2 (in Chinses) [中国科学院著 2022 电子设备热管理 (北京: 科学出版社) 第 2 页]
[41] Cheng Z 2021 Acta Phys. Sin. 70 236502 (in Chinses) [程哲. 第三代半导体材料及器件中的热科学和工程问题. 物理学报, 2021, 70(23): 236502.]
[42] Jeong J, Choi S J, Shim J, Kim E, Kim S K, Kim B H, Kim J P, Suh Y, Beak W J, Geum D, Koh Y, Kim D, Kim S 2023 In 2023 International Electron Devices Meeting (IEDM). pp 1–4
Metrics
- Abstract views: 83
- PDF Downloads: 0
- Cited By: 0
下载:
