New high-gain micro photovoltaic inverter based on GaN

LIN Yilei; YANG Cui; WANG Xinhuai; MAO Wei; GE Chongzhi; YU Longyang; ZHANG Chunfu; ZHANG Jincheng; HAO Yue

doi:10.7498/aps.74.20241798

Abstract

Microinverters have been widely used in distributed photovoltaic (PV) systems in recent years due to their modularity and flexibility. However, the current development of microinverter topologies faces significant challenges, such as low voltage gain and limited reliability. To solve these problems, an enhanced switched-inductor quasi-Z-Source inverter (ESL-qZSI) based on gallium nitride high electron mobility transistor (GaN HEMT) is proposed in this work. The proposed inverter introduces a novel topology that integrates an auxiliary boost unit with a switched-inductor quasi-Z-source network. This topology significantly enhances the voltage gain at low shoot-through duty ratios and reduces the voltage stress across the switching device. Additionally, the use of GaN HEMT as power switching components increases the switching frequency from the traditional 10 kHz to 100 kHz, in which a specialized negative turn-off gate driver circuit is designed to adapt the characteristics of the GaN HEMT and to ensure reliable switching operation. This increase in frequency reduces the size of passive components, such as inductors. Experimental results show that the proposed inverter achieves a boost factor of 5.75 at a shoot-through duty ratio of 0.2, which indicates that its performance is improved by 15% and 91% greater than the traditional switched-inductor-capacitor quasi-Z-source inverter (SLC-qZSI) and the traditional switched-inductor Z-source inverter (SL-ZSI), respectively. These results confirm that the proposed inverter enhances the voltage gain of existing topologies. Besides, compared with SLC-qZSI, the proposed inverter can obtain a higher efficiency of 90.5%, which shows the advantage of efficiency. In conclusion, the proposed ESL-qZSI with GaN HEMT provides a hopeful solution for high-efficiency and compact microinverter systems in photovoltaic applications.

Keywords:

Authors and contacts

1.
State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Faculty of integrated circuit, Xidian University, Xi’ an 710071, China
2.
School of Optoeletronic Engineering, Xidian University, Xi’ an 710071, China
3.
National Key Laboratory of Radar Detection and Sensing, School of Electronic Engineering, Xidian University, Xi’ an 710071, China

Corresponding author: YANG Cui, ycxd503@126.com ; WANG Xinhuai, xinhuaiwang@xidian.edu.cn ; MAO Wei, mwxidian@126.com ;

Funds: Project supported by the National Key R&D Program of China (Grant Nos. 2022YFB3604303, 2022YFB3604300) and the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 62421005).

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References

[1]	Hmad J, Houari A, Bouzid A E M, Saim A, Trabelsi H 2023 Energies 16 5062 Google Scholar
[2]	Iweh C D, Gyamfi S, Tanyi E, Effah-Donyina E 2021 Energies 14 5375 Google Scholar
[3]	Wang Q, Zhao B, Sun H D 2020 IEEE 4th Conference on Energy Internet and Energy System Integration (EI2) Wuhan, China, 2020 p1407
[4]	Priyadarshi N, Padmanaban S, Ionel D M, Mihet-Popa L, Azam F 2018 Energies 11 2277 Google Scholar
[5]	Monjo L, Sainz L, Mesas J J, Pedra J 2021 Energies 14 508 Google Scholar
[6]	Peng F Z 2003 IEEE Trans. Ind. Appl. 39 504 Google Scholar
[7]	Yuan J, Yang Y H, Blaabjerg F 2020 Energies 13 1390 Google Scholar
[8]	Samanbakhsh R, Koohi P, Ibanez F M, Martin F, Terzija V 2023 Int. J. Electr. Power Energy Syst. 147 108819 Google Scholar
[9]	Li Y, Anderson J, Peng F Z, Liu D C 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Washington, DC, USA, 2009 p918
[10]	Rajan V R, Premalatha L 2017 Int. J. Power Electron. Drive Syst. 8 325 Google Scholar
[11]	Axelrod B, Berkovich Y, Ioinovici A 2008 IEEE Trans. Circuits Syst. Regul. Pap. 55 687 Google Scholar
[12]	刘洪臣, 杨爽, 王国立, 李飞 2013 物理学报 62 150505 Google Scholar Liu H C, Yang S, Wang G L, Li F 2013 Acta Phys. Sin. 62 150505 Google Scholar
[13]	Zhu M, Yu K, Luo F L 2010 IEEE Trans. Power Electron. 25 2150 Google Scholar
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[15]	Zhu X Q, Zhang B, Qiu D Y 2018 IET Power Electron. 11 1774 Google Scholar
[16]	Karbalaei A R, Mardaneh M 2021 IEEE Ind. Electron. Mag. 15 4 Google Scholar
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[19]	Zhang Y J, Li J G, Wang J H, Zheng T Q, Jia P Y 2022 Energies 15 7791 Google Scholar
[20]	程哲 2021 物理学报 70 236502 Google Scholar Cheng Z 2021 Acta Phys. Sin. 70 236502 Google Scholar
[21]	王帅, 葛晨, 徐祖银, 成爱强, 陈敦军 2024 物理学报 73 177101 Google Scholar Wang S, Ge C, Xu Z Y, Cheng A Q, Chen D J 2024 Acta Phys. Sin. 73 177101 Google Scholar
[22]	Morita T, Tamura S, Anda Y, Ishida M, Uemoto Y, Ueda T, Tanaka T, Ueda D 2011 26th Annual IEEE Applied Power Electronics Conference and Exposition (APEC) Fort Worth, TX, USA, 2011 p481
[23]	Zhao C W, Trento B, Jiang L, Jones E A, Liu B, Zhang Z Y, Costinett D, Wang F, Tolbert L M, Jansen J F, Kress R, Langley R 2016 IEEE J. Emerging Sel. Top. Power Electron. 4 824 Google Scholar
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图 1 ESL-qZSI拓扑

Figure 1. ESL-qZSI topology.

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图 2 ESL-qZSI拓扑的直通模态等效电路

Figure 2. Equivalent circuits of ESL-qZSI topology in shoot-through states.

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图 3 ESL-qZSI拓扑的非直通模态等效电路

Figure 3. Equivalent circuits of ESL-qZSI topology in nonshoot-through states.

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图 4 不同拓扑升压能力对比　(a)升压因子B; (b)电压增益G

Figure 4. Boosting capability comparison of different topologies: (a) Boost factor B; (b) voltage gain G

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图 5 不同拓扑开关器件电压应力对比

Figure 5. Switching voltage stress comparison of different topologies.

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图 6 负压关断驱动电路

Figure 6. Driver circuit with negative voltage turn-off.

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图 7 直流链电压仿真波形

Figure 7. Simulation result of DC-link voltage waveform.

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图 8 仿真滤波输出　(a) 电压波形; (b) THD分析

Figure 8. Simulation result of filter output: (a) Voltage waveform; (b) analysis of THD.

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图 9 ESL-qZSI电容电压应力仿真结果

Figure 9. Capacitor voltage stress simulation results of ESL-qZSI.

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图 10 ESL-qZSI系统测试平台

Figure 10. ESL-qZSI system test platform.

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图 11 系统驱动波形

Figure 11. Experimental result of system drive waveform.

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图 12 直流链电压实测波形

Figure 12. Experimental result of DC-link voltage waveform.

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图 13 逆变器输出电压实测波形

Figure 13. Experimental result of inverter output voltage waveform.

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图 14 逆变器输出波形THD分析

Figure 14. THD analysis of inverter output voltage.

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表 1 ESL-qZSI拓扑特性

Table 1. Characteristics of ESL-qZSI topology.

参数名称	参数值
升压因子(B)	$ \dfrac{2}{1-4 D+3 D^{2}} $
电压增益(G)	$ \dfrac{2}{3 M-2} $
开关管电压应力V_sw/V_in	$ \dfrac{3 G^{2}}{2 G+2} $
C₁电压应力V_C1/V_in	$ \dfrac{1}{1-D} $
C₂电压应力V_C2/V_in	$ \dfrac{1}{1-3 D} $
C₃电压应力V_C3/V_in	$ \dfrac{2 D}{1-4 D+3 D^{2}} $
C₄电压应力V_C4/V_in	$ \dfrac{2}{1-3 D} $
D₁/D₂电压应力V_D/V_in	$ \dfrac{2}{1-4 D+3 D^{2}} $
D₃/D₄/D₅电压应力V_D/V_in	$ \dfrac{1-D}{1-4 D+3 D^{2}} $

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表 2 驱动电路关键参数

Table 2. Key parameters of driver circuit.

参数名称	R₇/Ω	R₅/Ω	R₄/Ω	C₆/nF	C₃/nF	C₄/nF
参数值	470	10	3.3	3	100	1

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表 3 ESL-qZSI实验参数

Table 3. Experimental parameters of ESL-qZSI.

参数名称	参数值
输入电压/V	64
开关频率/kHz	100
准Z源网络电容/μF	100
准Z源网络电感/mH	0.5
LC滤波电容/μF	20
LC滤波电感/mH	1
直通占空比D	0.2
基准频率/Hz	50

DownLoad: CSV

表 4 不同拓扑的典型结果对比

Table 4. Typical results of different inverter topologies.

参数	逆变器拓扑类型
参数	SL-ZSI		SLC-qZSI	ESL-qZSI
数据类型	样机测试结果	理论计算结果	样机测试结果	样机测试结果
输入电压V_in/V	36	36	80	64
直通占空比D	0.3	0.2	0.206	0.2
调制系数M	0.7	0.8	0.794	0.8
升压因子B	13	3	5	5.75
开关频率/kHz	10	10	13.3	100
效率/%	—	—	88.5	90.5

DownLoad: CSV

[1]	Hmad J, Houari A, Bouzid A E M, Saim A, Trabelsi H 2023 Energies 16 5062 Google Scholar
[2]	Iweh C D, Gyamfi S, Tanyi E, Effah-Donyina E 2021 Energies 14 5375 Google Scholar
[3]	Wang Q, Zhao B, Sun H D 2020 IEEE 4th Conference on Energy Internet and Energy System Integration (EI2) Wuhan, China, 2020 p1407
[4]	Priyadarshi N, Padmanaban S, Ionel D M, Mihet-Popa L, Azam F 2018 Energies 11 2277 Google Scholar
[5]	Monjo L, Sainz L, Mesas J J, Pedra J 2021 Energies 14 508 Google Scholar
[6]	Peng F Z 2003 IEEE Trans. Ind. Appl. 39 504 Google Scholar
[7]	Yuan J, Yang Y H, Blaabjerg F 2020 Energies 13 1390 Google Scholar
[8]	Samanbakhsh R, Koohi P, Ibanez F M, Martin F, Terzija V 2023 Int. J. Electr. Power Energy Syst. 147 108819 Google Scholar
[9]	Li Y, Anderson J, Peng F Z, Liu D C 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Washington, DC, USA, 2009 p918
[10]	Rajan V R, Premalatha L 2017 Int. J. Power Electron. Drive Syst. 8 325 Google Scholar
[11]	Axelrod B, Berkovich Y, Ioinovici A 2008 IEEE Trans. Circuits Syst. Regul. Pap. 55 687 Google Scholar
[12]	刘洪臣, 杨爽, 王国立, 李飞 2013 物理学报 62 150505 Google Scholar Liu H C, Yang S, Wang G L, Li F 2013 Acta Phys. Sin. 62 150505 Google Scholar
[13]	Zhu M, Yu K, Luo F L 2010 IEEE Trans. Power Electron. 25 2150 Google Scholar
[14]	Nguyen M K, Lim Y C, Cho G B 2011 IEEE Trans. Power Electron. 26 3183 Google Scholar
[15]	Zhu X Q, Zhang B, Qiu D Y 2018 IET Power Electron. 11 1774 Google Scholar
[16]	Karbalaei A R, Mardaneh M 2021 IEEE Ind. Electron. Mag. 15 4 Google Scholar
[17]	Bolaghi J A, Taheri A, Babaei M H, Gholami M, Harajchi S 2023 IETE J. Res. 70 4231 Google Scholar
[18]	Chaudhary O S, Denaï M, Refaat S S, Pissanidis G 2023 Energies 16 6689 Google Scholar
[19]	Zhang Y J, Li J G, Wang J H, Zheng T Q, Jia P Y 2022 Energies 15 7791 Google Scholar
[20]	程哲 2021 物理学报 70 236502 Google Scholar Cheng Z 2021 Acta Phys. Sin. 70 236502 Google Scholar
[21]	王帅, 葛晨, 徐祖银, 成爱强, 陈敦军 2024 物理学报 73 177101 Google Scholar Wang S, Ge C, Xu Z Y, Cheng A Q, Chen D J 2024 Acta Phys. Sin. 73 177101 Google Scholar
[22]	Morita T, Tamura S, Anda Y, Ishida M, Uemoto Y, Ueda T, Tanaka T, Ueda D 2011 26th Annual IEEE Applied Power Electronics Conference and Exposition (APEC) Fort Worth, TX, USA, 2011 p481
[23]	Zhao C W, Trento B, Jiang L, Jones E A, Liu B, Zhang Z Y, Costinett D, Wang F, Tolbert L M, Jansen J F, Kress R, Langley R 2016 IEEE J. Emerging Sel. Top. Power Electron. 4 824 Google Scholar
[24]	Jagan V, Ullemgondla G, Thati D, Salveru B, Ongole D, Banoth S 2024 3rd International Conference on Power Electronics and IoT Applications in Renewable Energy and its Control (PARC) Mathura, India, 2024 p475
[25]	谢瑞良, 郝翔, 王跃, 杨旭, 黄浪, 王超, 杨月红 2014 物理学报 63 120510 Google Scholar Xie R L, Hao X, Wang Y, Yang X, Huang L, Wang C, Yang Y H 2014 Acta Phys. Sin. 63 120510 Google Scholar
[26]	廖志贤, 罗晓曙, 黄国现 2015 物理学报 64 130503 Google Scholar Liao Z X, Luo X S, Huang G X 2015 Acta Phys. Sin. 64 130503 Google Scholar
[27]	易龙强, 郜克存 2008 电力电子技术 42 50 Google Scholar Yi L Q, Gao K C 2008 Power Electron. 42 50 Google Scholar

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