[1] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 2064 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 物理学报 59 2064]
[2] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Science in China 53 454
[3] Zhang J H, Gu F, Liu Q Q, Gu B, Li M 2010 Acta Phys. Sin. 59 4226 (in Chinese) [张加宏, 顾芳, 刘清惓, 顾斌, 李敏 2010 物理学报 59 4226]
[4] Gao H, Ikeda K, Hata S, Nakashima H, Wang D, Nakashima H 2011 Acta Materialia 59 2882
[5] Song J J, Zhang H M, Hu H Y, Fu Q 2009 Science in China 52 546
[6] Haugerud B M, Nayeem M B, Krithivasan R, Lu Y, Zhu C D, Cressler J D, Belford R E, Joseph A J 2005 Solid-State Electronics 49 986
[7] Olsen S H, Dobrosz P, Agaiby M B, Tsang Y L, Alatise O, Bull S J, O’Neill A G, Moselund K E, Ionescu A M, Majhi P, Buca D, Mantl S, Coulson H 2008 Materials Science in Semiconductor Processing 11(5-6) 271
[8] Mermoux M, Crisci A, Baillet F, Destefanis V, Rouchon D, Papon A M, Hartmann J M 2010 J. Appl. Phys. 107 013512
[9] Qian J 2003 MS Thesis (Beijing: The Chinese Academy of Sciences) (in Chinese) [钱劲 2003 硕士论文(北京: 中国科学院研究生院)]
[10] Narayanan S, Kalidindi S R, Schadler L S 1997 J. Appl. Phys. 82 2595
[11] Qiu Y, Lei Z K, Kang Y L, Hu M, Xu H, Niu H P 2004 Journal of Mechanical Strength 26 389
[12] Anastassakis E, Pinczuk A, Burstein E 1970 Solid State Communications 8 133
[13] Anastassakis E, Cantarere A, Cardona M 1990 Phys. Rev. B 41 7529
[14] Brantley W A 1973 J. Appl. Phys. 44 534
[15] Loudon R 1964 Adv. Phys. 13 423
[16] Song J J, Mao Y F, Shan H S, Yang C D, Li Y M, Zhang H M, Hu H Y 2010 IEEE International Asia Conference on Optical Instrument and Measurement Shenzhen 120—122
[17] Wolf I D 1996 Semicond. Sci. Technol. 11 139