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非晶SiOx:C颗粒在空气中经高温煅烧后光学性质的研究

郑立仁 黄柏标 尉吉勇 戴瑛

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非晶SiOx:C颗粒在空气中经高温煅烧后光学性质的研究

郑立仁, 黄柏标, 尉吉勇, 戴瑛

Optical properties of amorphous SiOx:C particles calcined in air at elevated temperature

Zheng Li-Ren, Huang Bai-Biao, Wei Ji-Yong, Dai Ying
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  • 通过高温裂解法制备了非晶SiOx:C颗粒, 该颗粒在空气中经不同温度进行煅烧.利用傅里叶红外光谱、扫描电子显微镜和荧光光谱仪对SiOx:C颗粒样品的结构、 形貌和光学性质进行了研究. 结果显示: 随着煅烧温度的升高, 样品的荧光光谱的峰位发生蓝移; 当煅烧温度为500 ℃时, 样品的荧光峰蓝移到417 nm处, 且强度最强; 而且该颗粒拥有红、绿、蓝三色的荧光效应; 但经高温(600 ℃和800 ℃) 煅烧后, 样品的荧光强度大大降低. 我们认为这种现象与样品被充分氧化后其中的氧缺陷减少有关.
    Amorphous SiOx:C particles are prepared by pyrolyzing method, and then they are calcined in an air ambient at different temperatures. The structures mophologies and optical properties of samples are analyzed with FTIR spectrum, scanning electron microscopy and fluorescent microscope, respectively. The results show that the luminescence band is blue-shifted with the increase of the annealing temperature. The particles exhibit the highest photoluminescence intensity with the 417 nm peak when annealed at 500 ℃. And the particles possess red, green or blue light emissions at room temperature when irradiated with appropriate wavelengths. Upon heating at a higher temperature (600 ℃ or 800 ℃), the fluorescence intensity of the SiOx:C sample decreases. We think that the phenomenon is attributed to the reduction of the number of oxygen defects in the sample heated at high temperature.
    • 基金项目: 国家重点基础研究发展计划(批准号: 2007CB613302)、山东省自然科学基金(批准号: ZR2012EMQ012)、晶体材料国家重点实验室(山东大学)开放课题(批准号: KF1001)和山东省泰安市科技发展计划(批准号: 20112023)资助的课题.
    • Funds: Project supported by the National Basic Research Program of China (Grant No. 2007CB613302), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2012EMQ012), the Open Subject of the State Key Laboratory of Crystal Materials (Shandong University) (Grant No. KF1001) and the Shandong Province Tai'An Science Technology Development Program, China (Grant No. 20112023).
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  • [1]

    Canham L T 1990 Appl. Phys. Lett. 57 1046

    [2]

    Kim T Y, Park N M, Kim K H, Sung G Y, Ok Y W, Seong T Y, Choi C J 2004 Appl. Phys. Lett. 85 5355

    [3]

    Hessel C H, Henderson E J, Veinot J G C 2006 Chem. Mater. 18 6139

    [4]

    Matthew C B, Kelly P K, Yu P R, Joseph M L, Qing S, Wyatt K M, Randy J E, Arthur J N 2007 Nano. Lett. 7 2506

    [5]

    Park J H, Gu L, von Maltzahn G, Ruoslahti E, Bhatia S N, Sailor M J 2009 Nature Mater. 8 331

    [6]

    Heinrich J L, Curtis C L, Credo G M, Sailor M J, Kavanagh K L 1992 Science 255 66

    [7]

    Godefroo S, Hayne M, Jivanescu M, Stesmans A, Zacharias M, Lebedev O I, van Tendeloo G, Moshchalkov V V 2008 Nature Nanotech. 3 174

    [8]

    Zheng L R, Huang B B, Wei J Y 2009 Acta Phys. Sin. 58 8612 (in Chinese) [郑立仁, 黄柏标, 尉吉勇 2009 物理学报 58 8612]

    [9]

    Zheng L R, Huang B B, Wei J Y 2009 Chem. J. Chinese U. 30 250 (in Chinese) [郑立仁, 黄柏标, 尉吉勇 2009 高等学校化学学报 30 250]

    [10]

    Zheng L R, Huang B B, Wei J Y 2009 Acta Phys. Sin. 58 2306 (in Chinese) [郑立仁, 黄柏标, 尉吉勇 2009 物理学报 58 2306]

    [11]

    Peng X S, Wang X F, Zhang J, Wang Y W, Sun S H, Meng G W, Zhang L D 2002 Appl. Phys. A 74 831

    [12]

    Kar S, Chaudhuri S 2005 Solid State Commun. 133 151

    [13]

    Skuja L, Tanimura K, Itoh N 1996 J. Appl. Phys. 80 3518

    [14]

    Salh R, von Czarnowski A, Fitting H J 2005 Phys. Status Solidi 2 580

    [15]

    Fitting H-J, Salh R, Schmidt B 2008 J. Non-Cryst. Solids. 354 1697

    [16]

    Fitting H-J, Salh R, Schmidt B 2007 Semiconductors 41 453

    [17]

    Lau S P, Marshall J M, Dyes T E 1995 Phil. Mag. B 72 323

    [18]

    Choi K, Uchida Y, Matsumura M 1996 Jpn. J. Appl. Phys. 35 1648

    [19]

    Liao L S, Bao X M, Zheng X Q, Li N S, Min N B 1996 Appl. Phys. Lett. 68 850

    [20]

    Rebohle L, Lehmann J, Prucnal S, Kanjilal A, Nazarov A, Tyagulskii I, Skorupa W, Helm M 2008 Appl. Phys. Lett. 93 071908

    [21]

    Ogi T, Kaihatsu Y, Iskandar F, Wang W N, Okuyama K 2008 Adv. Mater. 20 3235

    [22]

    Bhusari D M, Kshirsagar S T 1993 J. Appl. Phys. 73 15

    [23]

    Wang L, Xu J, Ma T F, Li W, Huang X F, Chen K J 1999 J. Alloys Compds. 290 273

    [24]

    Inagaki N, Tasaka S, Ake H 1994 Polym. Bull. 33 709

    [25]

    Locovsky G, Manitini M J, Srivastava J K, Irene E A 1987 J. Vac. Sci. Technol. B 5 530

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出版历程
  • 收稿日期:  2012-04-07
  • 修回日期:  2012-05-22
  • 刊出日期:  2012-11-05

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