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微型逆变器以其模块化、灵活等优势，近年来已广泛应用于分布式光伏发电系统中.然而受拓扑结构和传统功率器件性能的影响，目前微型逆变器拓扑的电压增益低、可靠性差等问题仍制约着微型逆变器的进一步发展.为此，本文提出并研制了一种基于GaN HEMT的增强型开关电感准Z源逆变器.该逆变器首次采用了辅助升压单元融合开关电感准Z源网络的新型拓扑结构，显著提高了低直通占空比下的电压增益，同时降低了开关器件电压应力.此外，采用GaN HEMT作为逆变器功率开关器件，设计了专用负压关断驱动电路，将功率管开关频率从传统的10 kHz提高到100 kHz，减小了电感及其他无源器件的体积.经样机系统测试，在直通占空比为0.2时，逆变器实际升压因子达到5.75，较其他开关电感准Z源型逆变器拓扑提高了15%.本研究在现有拓扑结构的基础上有效提高了电压增益，结合GaN HEMT的应用，为高效、紧凑的微型逆变器设计提供了新的技术路径.
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关键词:
- 微型光伏逆变器 /
- 开关电感准Z源逆变器 /
- GaN HEMT
Microinverters have been widely used in distributed photovoltaic (PV) systems in recent years due to their modularity and flexibility. However, the current development of microinverter topologies faces significant challenges, such as low voltage gain and limited reliability. To address these problems, this paper proposes an Enhanced Switched-Inductor quasi-Z-Source inverter (ESL-qZSI) based on Gallium Nitride High Electron Mobility Transistor (GaN HEMT). The proposed inverter introduces a novel topology that integrates an auxiliary boost unit with a switched-inductor quasi-Z-source network. This topology significantly enhances the voltage gain under low shoot-through duty ratios and reduces the voltage stress across the switching devices. Additionally, the use of GaN HEMT as power switching components increases the switching frequency from the conventional 10 kHz to 100 kHz, in which a specialized negative turn-off gate driver circuit is proposed to adapt the characteristics of the GaN HEMT and to ensure reliable switching operation. This increase in frequency reduces the size of passive components, such as inductors. Experimental results show that the proposed inverter achieves a boost factor of 5.75 at a shoot-through duty ratio of 0.2, which indicates a 15% improvement and a 91% improvement greater than the results of the conventional switched-inductor-capacitor quasi-Z-source inverter (SLC-qZSI) and the conventional switched-inductor Z-source inverter (SL-ZSI), respectively. These results confirm that the proposed inverter enhances the voltage gain of existing topologies. Besides, compared with SLC-qZSI, the proposed inverter could obtain a higher efficiency of 90.5%, which exhibites the advantage of efficiency. In conclusion, the proposed ESL-qZSI with GaN HEMT provides a promising solution for high-efficiency and compact microinverter systems in photovoltaic applications. -
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