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设计任意调控极化的电磁器件是一个研究热点, 其中多功能可重构电磁器件在雷达、卫星通信等领域有着广泛的应用. 本文设计了一种基于正本征负极(PIN)二极管可调谐的多功能可重构极化转换超表面, 可以实现不同频段内的线极化波转换、线极化波-圆极化波转换和全反射功能的切换, 在斜入射角小于30°时, 多功能转换器能保持高效的宽带极化转换特性. 这种转换和重构特性主要是由于结构本身的各向异性和PIN管不同状态时耦合模式的改变. 此外, 利用表面电流解释了偏振转换的物理机理, 电谐振和磁谐振的共同作用导致了偏振转换. 最后, 对该结构样品进行实验验证, 其结果与仿真吻合较好. 该器件在极化调控、频率控制、智能反射面设计和天线设计等方面具有潜在的应用价值.The design of electromagnetic device with arbitrary polarization manipulation is the hot spot of the current research. Multifunctional reconfigurable electromagnetic devices have been put into wide applications in radar, satellite communication and other fields. In this work designed is a multifunctional reconfigurable polarization conversion metasurface based on two PIN diodes, which can realize linear polarization conversion, linear-circular polarization conversion and total reflection switching in the different frequency bands, and the multi-function converter can still maintain the high-efficient broadband conversion characteristics when the oblique incidence angle is less than 30 degrees. The polarization conversion and reconfigurability are mainly due to the anisotropy of the structure and the changes of coupling mode in different states of PIN diodes. In addition, the physical mechanism of polarization conversion is explained by surface current. The combined action of electric resonance and magnetic resonance results in polarization conversion. Finally, the experimental results of the sample are in good agreement with the simulation results. The device has the potential application values in polarization manipulation, frequency control, intelligent reflecting surface design, and antenna design and so on.
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Keywords:
- metasurface /
- reconfigurability /
- polarization conversion /
- PIN diodes
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图 1 单元结构示意图 (a) 立体图; (b) 主视图; (c) 侧视图
Fig. 1. Schematics of unit cell: (a) Solid Shape; (b) main view; (c) side view.
图 2 等效电路 (a) 等效电路分析; (b) 等效电路模型
Fig. 2. Equivalent circuit: (a) Equivalent circuit analysis; (b) equivalent circuit model.
图 3 二极管不同状态下的仿真曲线 (a) “10”-反射系数; (b) “01”-反射系数; (c) “01”-反射相位; (d) “10”-反射系数; (e) “11”-反射系数
Fig. 3. Simulation curve of diodes in different states: (a) “10”-reflectance; (b) “01”-reflectance; (c) “01”-reflection phase; (d) “10”- reflectance; (e) “11”- reflectance.
图 4 二极管不同状态下的极化转换率、吸收率和轴比 (a) “10”与“01”; (b) “00”与“11”
Fig. 4. Polarization conversion rate, absorptance and axial ratio of diodes in different states: (a) “10” and “01”, (b) “00” and “11”.
图 5 可重构超表面样品结构与实际测试样品 (a) 顶层结构; (b) 底部馈线; (c) 实验样品顶层; (d) 实验样品底部馈线
Fig. 5. Reconfigurable metasurface sample structure with actual test sample: (a) Top structure; (b) bottom feeder; (c) top layer of experimental sample; (d) bottom feeder of experimental sample.
图 7 二极管不同状态下实验与仿真的性能对比 (a) “10”; (b) “01”; (c) “00”; (d) “11”
Fig. 7. Comparison of experimental and simulated performance of diodes in different states: (a) “10”; (b) “01”; (c) “00”; (d) “11”.
图 8 不同二极管状态下在u、v方向上的反射系数和相位差 (a) “10”; (b) “01”; (c) “00”; (d) “11”
Fig. 8. Reflectances and phase differences in u and v directions for different diode states: (a) “10”; (b) “01”; (c) “00”; (d) “11”.
图 9 不同入射角对不同二极管状态下可重构极化调控性能的影响 (a) “10”; (b) “01”; (c) “00”; (d) “11”
Fig. 9. Effect of different incidence angles on the reconfigurable polarization modulation performance in different diode states: (a) “10”; (b) “01”; (c) “00”; (d) “11”.
图 10 其他方位角的斜入射响应 (a) “10”状态; (b) “01”状态 (c) “00”状态; (d) “11”状态
Fig. 10. Oblique incident response at other azimuths: (a) “10”; (b) “01”; (c) “00”; (d) “11”.
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[1] Gao X, Han X, Cao W P, Li H O, Ma H F, Cui T J 2015 IEEE Trans. Antennas Propag. 63 3522
Google Scholar
[2] Huang X J, Yang H L, Zhang D H, Luo Y 2019 IEEE Trans. Antennas Propag. 67 4636
Google Scholar
[3] Li Y, Cao Q, Wang Y 2018 IEEE Antennas Wirel. Propag. Lett. 17 1314
Google Scholar
[4] Nama L, Nilotpal, Bhattacharyya S, Jain P K 2021 IEEE Antennas Propag. Mag. 63 100
Google Scholar
[5] Zheng Q, Guo C, Ding J 2018 IEEE Antennas Wirel. Propag. Lett. 17 1459
Google Scholar
[6] 李海鹏, 吴潇, 丁海洋, 辛可为, 王光明, 徐进, 李荣强, 蒋小平, 王身云, 韩天成 2021 物理学报 70 027803
Google Scholar
Li H P, Wu X, Ding H Y, Xin K W, Wang G M, Xu J, Li R Q, Jiang X P, Wang S Y, Han T C 2021 Acta Phys. Sin. 70 027803
Google Scholar
[7] 徐进, 李荣强, 蒋小平, 王身云, 韩天成 2019 物理学报 68 117081
Google Scholar
Xu J, Li R Q, Jiang X P, Wang S Y, Han T C 2019 Acta Phys. Sin. 68 117081
Google Scholar
[8] Li Y, Lin J, Guo H, Sun W, Xiao S, Zhou L 2020 Adv. Opt. Mater. 8 1901548
Google Scholar
[9] Shen Z Y, Huang X J, Yang H L, Xiang T Y, Wang C W, Yu Z T, Wu J 2018 J. Appl. Phys. 123 225106
Google Scholar
[10] Negm A, Bakr M, Howlader M, Ali S 2021 Smart Mater. Struct. 30 075011
Google Scholar
[11] 高喜, 唐李光 2021 物理学报 70 038101
Google Scholar
Gao X, Tang L G 2021 Acta Phys. Sin. 70 038101
Google Scholar
[12] 李国强, 施宏宇, 刘康, 李博林, 衣建甲, 张安学, 徐卓 2021 物理学报 70 188701
Google Scholar
Li G Q, Shi H N, Liu K, Li B L, Yi J J, Zhang A X, Xu Z 2021 Acta Phys. Sin. 70 188701
Google Scholar
[13] 李小兵, 陆卫兵, 刘震国, 陈昊 2018 物理学报 67 184101
Google Scholar
Li X B, Lu W B, Liu Z G, Chen H 2018 Acta Phys. Sin. 67 184101
Google Scholar
[14] 张娜, 赵健民, 陈克, 赵俊明, 姜田, 冯一军 2021 物理学报 70 178101
Google Scholar
Zhang N, Zhao J M, Chen K, Zhao J M, Jiang T, Feng Y J 2021 Acta Phys. Sin. 70 178101
Google Scholar
[15] Castaldi G, Zhang L, Moccia M, Hathaway A Y, Tang W X, Cui T J, Galdi V 2021 Adv. Funct. Mater. 31 2007620
Google Scholar
[16] 马婧, 刘冬冬, 王继成, 冯延 2018 物理学报 67 094102
Google Scholar
Ma J, Liu D D, Wang J C, Feng Y 2018 Acta Phys. Sin. 67 094102
Google Scholar
[17] Sun W J, Yang W W, Guo L, Qin W, Chen J X 2020 IEEE Antennas Wirel. Propag. Lett. 19 1088
Google Scholar
[18] Xia Z X, Leung K W, Yang N, Lu K 2021 IEEE Trans. Antennas Propag. 69 2031
Google Scholar
[19] 庞慧中, 王鑫, 王俊林, 王宗利, 刘苏雅拉图, 田虎强 2021 物理学报 70 168101
Google Scholar
Pang H Z, Wang X, Wang J L, Wang Z L, Liu S Y L T, Tian H Q 2021 Acta Phys. Sin. 70 168101
Google Scholar
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[21] Tian J, Cao X, Gao J, Yang H, Han J, Yu H, Wang S, Jin R, Li T 2019 J. Appl. Phys. 125 135105
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[22] He J H, Wang S Q, Li X W, Fan J D, Guo L Y, Guo L, Huang X J 2021 Phys. Scr. 96 125846
Google Scholar
[23] Liu G Y, Li L, Han J Q, Liu H X, Gao X H, Shi Y, Cui T J 2020 ACS Appl. Mater. Interfaces 12 23554
Google Scholar
[24] Wang H L, Ma H F, Chen M, Sun S, Cui T J 2021 Adv. Funct. Mater. 31 2100275
Google Scholar
[25] Zhang N, Chen K, Zheng Y, Hu Q, Qu K, Zhao J, Wang J, Feng Y 2020 IEEE J. Em. Sel. Top. C 10 20
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