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In order to investigate the total-dose irradiation effects of Altera static random access memory (SRAM)-based FPGA (field programmable gate array), the irradiation response of basic cell of FPGA, i.e. the CMOS, is studied, and the relationship of the output waveform as a function of total dose has been obtained. It indicates that the output waveforms become aberrated and the peak-peak value turns to about 1/10 of the initial value as the total dose increased, resulting from the degradation of leakage current both from field oxygen and the structure; but there are relatively high and low levels left in the output waveforms. Meanwhile, the high level cant keep the already existing state and changes to the low level, and the conversion speed is accelerated with the increase of the total dose. The low level becomes larger than the initial value. As the gate-oxygen is quite thin, the rise time, fall time, and delay of the output waveforms change little with the total dose.
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Keywords:
- 60Co γ /
- total-dose irradiation damage effects /
- SRAM-based FPGA /
- CMOS cell
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[2] Lum G K, May R J, Robinette L E 1994 IEEE Trans. Nucl. Sci. 41 2487
[3] Heather Quinn, Keith Morgan, Paul Graham, Jim Krone, Michael Caffrey, Kevin Lundgreen 2007 IEEE Trans. Nucl. Sci. 54 2037
[4] Morgan K S, McMurtrey D L, PrattBH, Michael J, Wirthlin 2007 IEEE Trans. Nucl. Sci. 54 2056
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[12] Yuan G H, Yang H M, Xu X, Dong X C 2006 High Power Laser and Particle Beams 18 487 (in Chinese) [袁国火、 杨怀民、 徐 曦、 董秀成 2006 强激光与粒子束 18 487]
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[14] Gao B, Yu X F, Ren D Y, Wang Y Y, Li P W, Yu Y 2009 Atomic Energy Science and Technology 43 1128 (in Chinese) [高 博、 余学峰、 任迪远、 王义元、 李鹏伟、 于 跃 2009 原子能科学技术 43 1128]
[15] Yu X F, Ren D Y, L u W, Zhang G Q, Guo Q, Yan R L 1997 Nuclear Techniques 20 24 (in Chinese) [余学锋、 任迪远、 陆 妩、 张国强、 郭 旗、 严荣良 1997 核技术 20 24]
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[1] Farouk S, Sias M 2007 IEEE Trans. Nucl. Sci. 54 1343
[2] Lum G K, May R J, Robinette L E 1994 IEEE Trans. Nucl. Sci. 41 2487
[3] Heather Quinn, Keith Morgan, Paul Graham, Jim Krone, Michael Caffrey, Kevin Lundgreen 2007 IEEE Trans. Nucl. Sci. 54 2037
[4] Morgan K S, McMurtrey D L, PrattBH, Michael J, Wirthlin 2007 IEEE Trans. Nucl. Sci. 54 2056
[5] Wang J J, Samiee S, Chen H S, Huang C K, Cheung M, Borillo J, Sun S N, Cronquist B, McCollum J 2004 IEEE Trans. Nucl. Sci. 51 3759
[6] He C H, Li Y H, 2007 Chin. Phys. 16 2773
[7] Chen G F, Yan W B, Chen H J, Li X H, Li Y X 2009 Chin. Phys. B 18 293
[8] Zhang E X, Qian C Z, Zheng X,L Cheng L, Wang X, Wang Y M, Wang X H, Zhao G R, En Y F, Luo H W, Shi Q 2006 Chin. Phys. 15 792
[9] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展、 陆 妩、 任迪远、 王义元、 郭 旗、 余学锋、 何承发 2009 物理学报 58 5572]
[10] He C H, Geng B, He B P, Yao Y J, Li Y H, Peng H L, Lin D S, Zhou H, Chen Y S 2004 Acta Phys. Sin. 53 194 (in Chinese) [贺朝会、 耿 斌、 何宝平、 姚育娟、 李永宏、 彭宏 论、 林东生、 周 辉、 陈雨生 2004 物理学报 53 194] [11] Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese) [李瑞珉、 杜 磊、 庄奕琪、 包军林 2007 物理学报 56 3400]
[11] Zhao J C 2002 Nuclear Electronics & Detection Technology 22 559 (in Chinese) [赵聚朝 2002 核电子学与探测技术 22 559]
[12] Yuan G H, Yang H M, Xu X, Dong X C 2006 High Power Laser and Particle Beams 18 487 (in Chinese) [袁国火、 杨怀民、 徐 曦、 董秀成 2006 强激光与粒子束 18 487]
[13] Du C H, Zhan J L 2009 Annual Meeting of Resist Radiation Electronics and Electric Magnetic Pulse in the tenth Shenyang, July 17—19, p198 (in Chinese) [杜川华、 詹俊岭 2009 第十届全国抗辐射电子学与电磁脉冲学术年会 沈阳, 7月17—19, 198]
[14] Gao B, Yu X F, Ren D Y, Wang Y Y, Li P W, Yu Y 2009 Atomic Energy Science and Technology 43 1128 (in Chinese) [高 博、 余学峰、 任迪远、 王义元、 李鹏伟、 于 跃 2009 原子能科学技术 43 1128]
[15] Yu X F, Ren D Y, L u W, Zhang G Q, Guo Q, Yan R L 1997 Nuclear Techniques 20 24 (in Chinese) [余学锋、 任迪远、 陆 妩、 张国强、 郭 旗、 严荣良 1997 核技术 20 24]
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