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In this paper, we investigate the effect of annealing conditions on the characteristic of Ni/Au Ohmic contact to p-GaN. The specific contact resistivities under different annealing temperature and different annealing atmosphere are tested using the circular transmission line model. It is found that the best annealing temperature is about 500 ℃. The annealing atmosphere of nitrogen-oxygen gas mixture can lead to lower specific contact resistivity than that of pure nitrogen, and the specific contact resistivity has no relationship with the content of oxygen. Finally, we obtain the lowest specific contact resistivity to be 7.65×10-4 Ω·cm2 at the best annealing temperature and atmosphere.
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Keywords:
- p-GaN /
- Ohmic contact /
- circular transmission line model /
- rapid thermal annealing
[1] Mayes K, Yasan A, McClintock R, Shiell D, Darvish S R, Kung P, Razeghi M 2004 Appl. Phys. Lett. 84 1046
[2] Li G, Cao Y, Xing H G, Jena D 2010 Appl. Phys. Lett. 97 222110
[3] Butun B, Tut T, Ulker E, Yelboga T, Ozbay E 2008 Appl. Phys. Lett. 92 033507
[4] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 1268 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 物理学报 59 1268]
[5] Fan Z, Mohammad S N, Kim W, Aktas Ö, Botchkarev A E, Morkoc H 1996 Appl. Phys. Lett. 68 1672
[6] Ho J K, Jong C S, Chiu C C, Huang C N, Chen C Y, Shih K K 1999 Appl. Phys. Lett. 74 1275
[7] Zhang A P, Luo B, Johnson J W, Ren F, Han J, Pearton S J 2001 Appl. Phys. Lett. 79 3636
[8] Chary I, Chandolu A, Borisov B, Kuryatkov V, Nikishin S, Holtz M 2009 J. Electron. Mater. 38 545
[9] Wang L J, Zhang S M, Zhu J H, Zhu J J, Zhao D G, Liu Z S, Jiang D S, Wang Y T, Yang H 2010 Chin. Phys. B 19 017307
[10] Chen L C, Chen F R, Kai J J, Chang L, Ho J K, Jong C S, Chiu C C, Huang C N, Chen C Y, Shih K K 1999 J. Appl. Phys. 86 3826
[11] Ding Z B, Wang K, Chen T X, Chen D, Yao S D 2008 Acta Phys. Sin. 57 2445 (in Chinese) [丁志博, 王坤, 陈田祥, 陈迪, 姚淑德 2008 物理学报 57 2445]
[12] Qiao D, Yu L S, Lau S S, Lin J Y, Jiang H X, Haynes T E 2000 J. Appl. Phys. 88 4196
[13] Smalc-Koziorowska J, Grzanka S, Litwin-Staszewska E, Piotrzkowski R, Nowak G, Leszczynski M, Perlin P, Talik E, Kozubowski J, Krukowski S 2010 Solid State Electron 54 701
[14] Lin Y J 2005J. Vac. Sci. Technol. B 23 48
[15] Gregory S, MARLOW, DAS M B 1982 Solid State Electron 25 91
[16] Liday J, Hotový I, Sitter H, Vogrinčič P, Vincze A, Vávra I, Šatka A, Ecke G, Bonanni A, Breza J, Simbrunner C, Plochberger B 2007 J. Mater. Sci. Mater. Electron. 19 855
[17] Greco G, Prystawko P, Leszczyński M, Nigro R L, Raineri V, Roccaforte F 2011 J. Appl. Phys. 110 123703
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[1] Mayes K, Yasan A, McClintock R, Shiell D, Darvish S R, Kung P, Razeghi M 2004 Appl. Phys. Lett. 84 1046
[2] Li G, Cao Y, Xing H G, Jena D 2010 Appl. Phys. Lett. 97 222110
[3] Butun B, Tut T, Ulker E, Yelboga T, Ozbay E 2008 Appl. Phys. Lett. 92 033507
[4] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 1268 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 物理学报 59 1268]
[5] Fan Z, Mohammad S N, Kim W, Aktas Ö, Botchkarev A E, Morkoc H 1996 Appl. Phys. Lett. 68 1672
[6] Ho J K, Jong C S, Chiu C C, Huang C N, Chen C Y, Shih K K 1999 Appl. Phys. Lett. 74 1275
[7] Zhang A P, Luo B, Johnson J W, Ren F, Han J, Pearton S J 2001 Appl. Phys. Lett. 79 3636
[8] Chary I, Chandolu A, Borisov B, Kuryatkov V, Nikishin S, Holtz M 2009 J. Electron. Mater. 38 545
[9] Wang L J, Zhang S M, Zhu J H, Zhu J J, Zhao D G, Liu Z S, Jiang D S, Wang Y T, Yang H 2010 Chin. Phys. B 19 017307
[10] Chen L C, Chen F R, Kai J J, Chang L, Ho J K, Jong C S, Chiu C C, Huang C N, Chen C Y, Shih K K 1999 J. Appl. Phys. 86 3826
[11] Ding Z B, Wang K, Chen T X, Chen D, Yao S D 2008 Acta Phys. Sin. 57 2445 (in Chinese) [丁志博, 王坤, 陈田祥, 陈迪, 姚淑德 2008 物理学报 57 2445]
[12] Qiao D, Yu L S, Lau S S, Lin J Y, Jiang H X, Haynes T E 2000 J. Appl. Phys. 88 4196
[13] Smalc-Koziorowska J, Grzanka S, Litwin-Staszewska E, Piotrzkowski R, Nowak G, Leszczynski M, Perlin P, Talik E, Kozubowski J, Krukowski S 2010 Solid State Electron 54 701
[14] Lin Y J 2005J. Vac. Sci. Technol. B 23 48
[15] Gregory S, MARLOW, DAS M B 1982 Solid State Electron 25 91
[16] Liday J, Hotový I, Sitter H, Vogrinčič P, Vincze A, Vávra I, Šatka A, Ecke G, Bonanni A, Breza J, Simbrunner C, Plochberger B 2007 J. Mater. Sci. Mater. Electron. 19 855
[17] Greco G, Prystawko P, Leszczyński M, Nigro R L, Raineri V, Roccaforte F 2011 J. Appl. Phys. 110 123703
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