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单载流子传输的双异质结光敏晶体管探测器的研究

霍文娟 谢红云 梁松 张万荣 江之韵 陈翔 鲁东

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单载流子传输的双异质结光敏晶体管探测器的研究

霍文娟, 谢红云, 梁松, 张万荣, 江之韵, 陈翔, 鲁东

Uni-traveling-carrier double heterojunction phototransistor photodetector

Huo Wen-Juan, Xie Hong-Yun, Liang Song, Zhang Wan-Rong, Jiang Zhi-Yun, Chen Xiang, Lu Dong
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  • 基于器件仿真器Atlas, 建立了InP/InGaAsP单向载流子传输的双异质结光敏晶体管(UTC-DHPT)的二维模型, 分析讨论了器件性能与外延结构参数的关系. 设计出同时具有高响应度(≥17.93 A/W)和高特征频率(≥121.68 GHz)的UTC-DHPT, 缓解了传统的异质结光敏晶体管光电探测器中探测效率和工作速度的矛盾.
    An InP/InGaAsP uni-traveling-carrier double heterojunction phototransistor (UTC-DHPT) photodetector is simulated and analyzed in a two-dimensional (2D) model utilizing a numerical device simulator (Atlas). The effects of device structure parameters on operational performance, such as responsivity and characteristic frequency, are studied in detail. Simulation results indicate that the UTC-DHPT can ease the contradiction between detection efficiency and working speed, which exists in traditional heterojun-ction phototransistor and achieve both high responsivity (≥17.93 A/W) and high characteristic frequency (≥121.68 GHz) simultaneously.
    • 基金项目: 国家自然科学基金(批准号: 61006044, 60776051, 61006059, 61274071, 61090392)、国家高技术研究发展计划(批准号: 2013AA014502, 2011AA010303)、北京市自然科学基金(批准号: 4122014, 4082007)和北京市教委科技发展计划(批准号: KM200910005001, KM200710005015)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61006044, 60776051, 61006059, 61274071, 61090392), the National High Technology Research and Development Program of China (Grant Nos. 2013AA014502, 2011AA010303), the Beijing Municipal Natural Science Foundation, China (Grant Nos. 4122014, 4082007), and the Beijing Municipal Education Committee, China (Grant Nos. KM200910005001, KM20070005015).
    [1]

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    [2]

    Khan H A, Rezazadeh A A, Sonhaib S, Tauqeer T 2012 IEEE J. Quantum Elect. 48 576

    [3]

    Kamitsuna H, Matsuoka Y, Yamahata S, Shigekawa N 2001 IEEE Trans. Microw. Theory 49 1921

    [4]

    Kamitsuna H, Matsuoka Y, Yamahata S, Shigekawa N 2000 European Microwave Conference (EUMC) Paris, France, October, 2000 p1

    [5]

    Chandrasekhar S, Lunardi L M, Gnauck A H, Hamm R A, Qua G J 1993 IEEE Photonic. Tech. L. 5 1316

    [6]

    Kamitsuna H, Ishii K, Shibata T, Kurishima K, Ida M 2004 IEEE J. Sel. Top. Quant. 10 673

    [7]

    Leven A, Houtsma V, Kopf R, Baeyens Y, Chen Y K 2004 Electron. Lett. 40 833

    [8]

    Ishibashi T, Furuta T, Fushimi H, Kodama S, Ito H, Nagatsuma T, Shimizu N, Miyamoto Y 2000 IEICE Trans. Electron. 83 938

    [9]

    Ito H, Kodama S, Muramoto Y 2004 IEEE J. Sel. Top. Quantum Electron. 10 709

    [10]

    Chtioui M, Enard A, Carpentier D, Rousseau B, Lelarge F, Pommereau F, Achouche M 2008 IEEE Photon. Technol. Lett. 20 202

    [11]

    Zuo Y H, Cao Q, Zhang Y, Zhang L Z, Guo J C, Xue C L, Cheng B W, Wang Q M 2011 Chin. Phys. B 20 018504

    [12]

    Zhang Y X, Liao Z Y Zhao L J, Pan J Q, Zhu H L, Wang W 2010 Chin. Phys. B 19 074216

    [13]

    Shi T, Xiong B, Sun C Z, Luo Y 2013 IEEE Photonic. Tech. L. 25 136

    [14]

    Rouvalis E, Chtioui M, van Dijk F, Lelarge F, Fice M J, Renaud C C, Carpintero G A, Seeds A J 2012 Opt. Express 20 20090

    [15]

    Ito H, Yoshimatsuc T, Yamamotoa H, Ishibashi T 2013 Proceedings of SPIE Volume 8716 Baltimore, Maryland, USA, April 29–30, 2013 p871602-1

    [16]

    Wang L S, Zhao L J, Pan J Q, Zhang W, Wang H, Zhu H L, Wang W 2009 Opto-Electron. Rev. 17 242

    [17]

    Schiellein J, Rosales M, Polleux J L, Algani C, Merlet T, Riet M, Godin J 2011 Proceedings of the 41st European Microwave Conference Manchester, UK, October 10–13, 2011 p949

    [18]

    Ishibashi T, Kodama S, Shimizu N, Furuta T 1997 J. Appl. Phys. 36 6263

    [19]

    Matsuoka Y, Sano E 1995 Solid-State Electron. 38 1703

    [20]

    Matsuoka Y, Yamahata S, Kurishima K, Ito H 1996 Jpn. J. Appl. Phys 35 5646

    [21]

    Liu W 1998 Handbook of Ⅲ-V Heterojunction Bipolar Transistors (1st Ed.) (Malden: Wiley-Interscience) p81

    [22]

    Wang L S 2009 Ph. D. Dissertation (Beijing: Institute of Semiconductors, Chinese Academy of Science) (in Chinese) [王列松 2009 博士学位论文(北京: 中国科学院半导体研究所)]

    [23]

    Srivastava S, Roenker K P 2004 Solid-State Electro. 48 461

  • [1]

    Zhang L Z, Zuo Y H, Cao Q, Xue C L, Cheng B W, Zhang W C, Cao X L, Wang Q M 2012 Acta Phys. Sin. 61 138501 (in Chinese) [张岭梓, 左玉华, 曹权, 薛春来, 成步文, 张万昌, 曹学蕾, 王启明 2012 物理学报 61 138501]

    [2]

    Khan H A, Rezazadeh A A, Sonhaib S, Tauqeer T 2012 IEEE J. Quantum Elect. 48 576

    [3]

    Kamitsuna H, Matsuoka Y, Yamahata S, Shigekawa N 2001 IEEE Trans. Microw. Theory 49 1921

    [4]

    Kamitsuna H, Matsuoka Y, Yamahata S, Shigekawa N 2000 European Microwave Conference (EUMC) Paris, France, October, 2000 p1

    [5]

    Chandrasekhar S, Lunardi L M, Gnauck A H, Hamm R A, Qua G J 1993 IEEE Photonic. Tech. L. 5 1316

    [6]

    Kamitsuna H, Ishii K, Shibata T, Kurishima K, Ida M 2004 IEEE J. Sel. Top. Quant. 10 673

    [7]

    Leven A, Houtsma V, Kopf R, Baeyens Y, Chen Y K 2004 Electron. Lett. 40 833

    [8]

    Ishibashi T, Furuta T, Fushimi H, Kodama S, Ito H, Nagatsuma T, Shimizu N, Miyamoto Y 2000 IEICE Trans. Electron. 83 938

    [9]

    Ito H, Kodama S, Muramoto Y 2004 IEEE J. Sel. Top. Quantum Electron. 10 709

    [10]

    Chtioui M, Enard A, Carpentier D, Rousseau B, Lelarge F, Pommereau F, Achouche M 2008 IEEE Photon. Technol. Lett. 20 202

    [11]

    Zuo Y H, Cao Q, Zhang Y, Zhang L Z, Guo J C, Xue C L, Cheng B W, Wang Q M 2011 Chin. Phys. B 20 018504

    [12]

    Zhang Y X, Liao Z Y Zhao L J, Pan J Q, Zhu H L, Wang W 2010 Chin. Phys. B 19 074216

    [13]

    Shi T, Xiong B, Sun C Z, Luo Y 2013 IEEE Photonic. Tech. L. 25 136

    [14]

    Rouvalis E, Chtioui M, van Dijk F, Lelarge F, Fice M J, Renaud C C, Carpintero G A, Seeds A J 2012 Opt. Express 20 20090

    [15]

    Ito H, Yoshimatsuc T, Yamamotoa H, Ishibashi T 2013 Proceedings of SPIE Volume 8716 Baltimore, Maryland, USA, April 29–30, 2013 p871602-1

    [16]

    Wang L S, Zhao L J, Pan J Q, Zhang W, Wang H, Zhu H L, Wang W 2009 Opto-Electron. Rev. 17 242

    [17]

    Schiellein J, Rosales M, Polleux J L, Algani C, Merlet T, Riet M, Godin J 2011 Proceedings of the 41st European Microwave Conference Manchester, UK, October 10–13, 2011 p949

    [18]

    Ishibashi T, Kodama S, Shimizu N, Furuta T 1997 J. Appl. Phys. 36 6263

    [19]

    Matsuoka Y, Sano E 1995 Solid-State Electron. 38 1703

    [20]

    Matsuoka Y, Yamahata S, Kurishima K, Ito H 1996 Jpn. J. Appl. Phys 35 5646

    [21]

    Liu W 1998 Handbook of Ⅲ-V Heterojunction Bipolar Transistors (1st Ed.) (Malden: Wiley-Interscience) p81

    [22]

    Wang L S 2009 Ph. D. Dissertation (Beijing: Institute of Semiconductors, Chinese Academy of Science) (in Chinese) [王列松 2009 博士学位论文(北京: 中国科学院半导体研究所)]

    [23]

    Srivastava S, Roenker K P 2004 Solid-State Electro. 48 461

计量
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  • 被引次数: 0
出版历程
  • 收稿日期:  2013-08-05
  • 修回日期:  2013-08-25
  • 刊出日期:  2013-11-05

单载流子传输的双异质结光敏晶体管探测器的研究

  • 1. 北京工业大学电子信息与控制工程学院, 北京 100124;
  • 2. 中国科学院半导体研究所, 材料重点实验室, 北京 100083
    基金项目: 国家自然科学基金(批准号: 61006044, 60776051, 61006059, 61274071, 61090392)、国家高技术研究发展计划(批准号: 2013AA014502, 2011AA010303)、北京市自然科学基金(批准号: 4122014, 4082007)和北京市教委科技发展计划(批准号: KM200910005001, KM200710005015)资助的课题.

摘要: 基于器件仿真器Atlas, 建立了InP/InGaAsP单向载流子传输的双异质结光敏晶体管(UTC-DHPT)的二维模型, 分析讨论了器件性能与外延结构参数的关系. 设计出同时具有高响应度(≥17.93 A/W)和高特征频率(≥121.68 GHz)的UTC-DHPT, 缓解了传统的异质结光敏晶体管光电探测器中探测效率和工作速度的矛盾.

English Abstract

参考文献 (23)

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