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钙钛矿超晶格中蕴含着丰富的磁现象, 特别是锰酸镧/镍酸镧超晶格中的异常磁交换偏置现象是一个研究热点. 本文采用脉冲激光沉积技术, 制备出不同取向的锰酸镧/镍酸镧超晶格, 并对超晶格的电输运性能和交换偏置现象进行了系统的研究. 实验发现, 超晶格在不同取向的衬底上外延生长并保持晶格应力; 超晶格的母体是Mott绝缘体并遵循二维Mott变程跃迁导电机理; 不同取向的超晶格都表现出交换偏置现象; 场冷和零场冷曲线表明在低温下超晶格中存在两种不同的磁性组元. 对超晶格交换场强度的进一步分析发现, 交换场强度与超晶格的取向以及超晶格与衬底界面处的极性补偿有关. 在不同温度下都观察到, 极性连续的超晶格的交换场强度都高于极性失配的超晶格. 上述研究结果对进一步理解钙钛矿超晶格中的磁电输运性能有所帮助.Perovskite superlattices have received enormous attention in recent years, for they possess several new phases of quantum matter. In particular, an unexpected exchange bias effect in (111)-oriented superlattices composed of ferromagnetic LaMnO3 and paramagnetic LaNiO3 is observed, which has aroused broad interest. In this work, three kinds of LaMnO3/LaNiO3 superlattices with (001), (110), and (111) out-of-plane orientation are fabricated by pulsed laser deposition, and also studied systemically. It is found that the superlattices are epitaxially grown on the SrTiO3 substrates without strain relaxation. The superlattices have a monolayer terraced structure with a surface roughness below 0.1 nm. Electrical transport measurements reveal a Mott conducting behavior with strong localization of electrons in the superlattices. All the superlattices with different orientations exhibit exchange bias phenomenon. The field cooling and zero field cooling curves indicate that there are two different magnetic components in the superlattice in a low temperature range. Further analysis of the values of exchange field reveals that the exchange bias field is related to the orientation and polarity of the superlattices. Different superlattices form different charged planes stacked along out-of-plane orientation, leading to a polarity match/mismatch at the interface between the superlattices and substrates. The surface reconstructions that act as compensating for the polar mismatch influence the exchange bias field of the superlattices. It is observed that the intensities of the exchange field of the polar-matched superlattices are higher than those of the polar-mismatched superlattices at different temperatures. These results are helpful in further understanding the magnetoelectric transport properties in the perovskite superlattices.
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Keywords:
- perovskite /
- superlattice /
- epitaxial growth /
- exchange bias
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Zhang P, Piao H G, Zhang Y D, Huang J H 2021 Acta Phys. Sin. 70 157501Google Scholar
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[19] Zang J L, Zhou G W, Bai Y H, Quan Z Y, Xu X H 2017 Sci. Rep. 7 10557Google Scholar
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[24] Brenig W 1973 Philos. Mag. 27 1093Google Scholar
[25] Khan Z H, Husain M, Perng T P, Salh N, Habib S 2008 J. Phys. Condens. Matter 20 475207Google Scholar
[26] Hoffman J, Tung I C, Nelson-Cheeseman B B, Liu M, Freeland J W, Bhattacharya A 2013 Phys. Rev. B 88 144411Google Scholar
[27] Kawai M, Inoue S, Mizumaki M, Kawamura N, Ichikawa N, Shimakawa Y 2009 Appl. Phys. Lett. 94 082102Google Scholar
[28] Wei H M, Grundmann M, Lorenz M 2016 Appl. Phys. Lett. 109 082108Google Scholar
[29] Liu J, Kareev M, Prosandeev S, Gray B, Ryan P, Feeland J W, Chakhalian J 2010 Appl. Phys. Lett. 96 133111Google Scholar
[30] Chakraverty S, Saito M, Tsukimoto S, Ikuhara Y, Ohtomo A, Kawasaki M 2011 Appl. Phys. Lett. 99 223101Google Scholar
[31] Middey S, Meyers D, Kareev M, Moon E J, Gray B A, Liu X, Freeland J W, Chakhalian J 2012 Appl. Phys. Lett. 101 261602Google Scholar
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[1] Wei H M, Yang C, Wu Y Q, Cao B Q, Lorenz M, Grundmann M 2020 J. Mater. Chem. C 8 15575Google Scholar
[2] 姚鑫, 丁艳丽, 张晓丹, 赵颖 2015 物理学报 64 038805Google Scholar
Yao X, Ding Y L, Zhang X D, Zhao Y 2015 Acta Phys. Sin. 64 038805Google Scholar
[3] Pena M A, Fierro J L 2001 Chem. Rev. 101 1981Google Scholar
[4] Cherniukh I, Raino G, Stoferle T, et al. 2021 Nature 593 535Google Scholar
[5] Noguchi Y, Matsuo H 2021 Nanomaterials 11 1857Google Scholar
[6] Liu Y, Siron M, Lu D, Yang J J, dos Reis R, Cui F, Gao M Y, Lai M L, Lin J, Kong Q, Lei T, Kang J, Jin J B, Ciston J, Yang P D 2019 J. Am. Chem. Soc. 141 13028Google Scholar
[7] Haislmaier R C, Lapano J, Yuan Y K, Stone G, Dong Y Q, Zhou H, Alem N, Engel-Herbert R 2018 APL Mater. 6 111104Google Scholar
[8] Brahlek M, Sen Gupta A, Lapano J, Roth J, Zhang H T, Zhang L, Haislmaier R, Engel-Herbert R 2018 Adv. Funct. Mater. 28 1702772Google Scholar
[9] Wei H M, Jenderka M, Bonholzer M, Grundmann M, Lorenz M 2015 Appl. Phys. Lett. 106 042103Google Scholar
[10] 周龙, 王潇, 张慧敏, 申旭东, 董帅, 龙有文 2018 物理学报 67 157505Google Scholar
Zhou L, Wang X, Zhang H M, Shen X D, Dong S, Long Y W 2018 Acta Phys. Sin. 67 157505Google Scholar
[11] Yamasaki Y, Okuyama D, Nakamura M, et al. 2011 J. Phys. Soc. Jpn. 80 073601Google Scholar
[12] 张鹏, 朴红光, 张英德, 黄焦宏 2021 物理学报 70 157501Google Scholar
Zhang P, Piao H G, Zhang Y D, Huang J H 2021 Acta Phys. Sin. 70 157501Google Scholar
[13] Ouellette D G, Lee S B, Son J, Stemmer S, Balents L, Millis A J, Allen S J 2010 Phys. Rev. B 82 165112Google Scholar
[14] Gibert M, Zubko P, Scherwitzl T, Iniguez J, Triscone J M 2012 Nat. Mater. 11 195Google Scholar
[15] Dong S, Dagotto E 2013 Phys. Rev. B 87 195116Google Scholar
[16] Piamonteze C, Gibert M, Heidler J, et al. 2015 Phys. Rev. B 92 014426Google Scholar
[17] Lee A T, Han M J 2013 Phys. Rev. B 88 035126Google Scholar
[18] Wei H M, Barzola-Quiquia J L, Yang C, et al. 2017 Appl. Phys. Lett. 110 102403Google Scholar
[19] Zang J L, Zhou G W, Bai Y H, Quan Z Y, Xu X H 2017 Sci. Rep. 7 10557Google Scholar
[20] Pan S Y, Shi L, Zhao J Y, Zhou S M, Xu X M 2018 Appl. Phys. Lett. 112 141602Google Scholar
[21] Kitamura M, Kobayashi M, Sakai E, et al. 2019 Phys. Rev. B 100 245132Google Scholar
[22] Zhang J, Zhou J T, Luo Z L, Chen Y B, Zhou J, Lin W W, Lu M Hm Zhang S T, Gao C, Wu D, Chen Y F 2020 Phys. Rev. B 101 014422Google Scholar
[23] Tanguturi R G, Zhou P, Yan Z, Qi Y J, Zhang T J 2021 Phys. Status Solidi B 258 2000527Google Scholar
[24] Brenig W 1973 Philos. Mag. 27 1093Google Scholar
[25] Khan Z H, Husain M, Perng T P, Salh N, Habib S 2008 J. Phys. Condens. Matter 20 475207Google Scholar
[26] Hoffman J, Tung I C, Nelson-Cheeseman B B, Liu M, Freeland J W, Bhattacharya A 2013 Phys. Rev. B 88 144411Google Scholar
[27] Kawai M, Inoue S, Mizumaki M, Kawamura N, Ichikawa N, Shimakawa Y 2009 Appl. Phys. Lett. 94 082102Google Scholar
[28] Wei H M, Grundmann M, Lorenz M 2016 Appl. Phys. Lett. 109 082108Google Scholar
[29] Liu J, Kareev M, Prosandeev S, Gray B, Ryan P, Feeland J W, Chakhalian J 2010 Appl. Phys. Lett. 96 133111Google Scholar
[30] Chakraverty S, Saito M, Tsukimoto S, Ikuhara Y, Ohtomo A, Kawasaki M 2011 Appl. Phys. Lett. 99 223101Google Scholar
[31] Middey S, Meyers D, Kareev M, Moon E J, Gray B A, Liu X, Freeland J W, Chakhalian J 2012 Appl. Phys. Lett. 101 261602Google Scholar
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