质子入射AlxGa1–xN 材料的位移损伤模拟

何欢; 白雨蓉; 田赏; 刘方; 臧航; 柳文波; 李培; 贺朝会

doi:10.7498/aps.73.20231671

摘要

氮化镓材料由于优良的电学特性以及耐辐照性能, 其与不同含量Al_xGa_1–xN 材料组成的电子器件, 有望应用于未来空间电子系统中. 然而目前关于氮化镓位移损伤机理研究多关注于氮化镓材料, 对于 Al_xGa_1–xN 材料位移损伤研究较少. 本文通过两体碰撞近似理论模拟了 10 keV—300 MeV 质子在不同 Al 元素含量的Al_xGa_1–xN 材料中的位移损伤机理. 结果表明质子在Al_xGa_1–xN 材料中产生的非电离能损随质子能量增大而下降, 当质子能量低于 40 MeV时, 非电离能损随着 Al 含量的增大而变大, 当质子能量升高时该趋势相反; 分析由质子导致的初级撞出原子以及非电离能量沉积, 发现不同Al_xGa_1–xN 材料初级撞出原子能谱虽然相似, 然而 Al 元素含量越高, 由弹性碰撞产生的自身初级撞出原子比例越高; 对于质子在不同深度造成的非电离能量沉积, 弹性碰撞导致的能量沉积在径迹末端最大, 而非弹性碰撞导致的能量沉积在径迹前端均匀分布, 径迹末端减小, 并且低能质子主要是通过弹性碰撞造成非电离能量沉积, 而高能质子恰好相反. 本研究揭示了不同 Al 元素含量的Al_xGa_1–xN 材料质子位移损伤机理, 为 GaN 器件在空间辐射环境下的应用提供参考依据.

关键词:

Abstract

Gallium nitride materials, due to their excellent electrical properties and irradiation resistance, are expected to be used in future space electronics systems where electronic devices are composed of different amounts of Al_xGa_1–xN materials. However, most of their displacement damage studies currently focus on GaN materials, and less on Al_xGa_1–xN materials themselves. The mechanism of displacement damage induced by 10-keV to 300-MeV protons incident on Al_xGa_1–xN materials with different Al content is investigated by binary collision approximation method. The results show that the non-ionization energy loss of Al_xGa_1–xN material decreases with proton energy increasing. When the proton energy is lower than 40 MeV, the non-ionization energy loss becomes larger with the increase of Al content, while the trend is reversed when the proton energy increases. Analyzing the primary knock-on atoms and non-ionizing energy deposition caused by protons, it is found that the primary knock-on atoms’ spectra of different Al_xGa_1–xN materials are similar, but the higher the content of Al, the higher the proportion of the self primary knock-on atoms generated by elastic collisions is. For the non-ionizing energy deposition produced by protons at different depths, the energy deposition due to elastic collisions is largest at the end of the trajectory, while the energy deposition due to inelastic collisions is uniformly distributed in the front of the trajectory but decreases at the end of the trajectory. This study provides a good insight into the applications of GaN materials and devices in space radiation environment.

Keywords:

作者及机构信息

1.
西安交通大学核科学与技术学院, 西安　710049

2.
北京大学物理学院, 北京　100084

通信作者: 柳文波, liuwenbo@xjtu.edu.cn ; 李培, lipei0916@xjtu.edu.cn ; 贺朝会, hechaohui@xjtu.edu.cn

基金项目: 国家自然科学基金(批准号: 11975179)资助的课题.

Authors and contacts

1.
School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China

2.
School of Physics, Peking University, Beijing 100084, China

Corresponding author: Liu Wen-Bo, liuwenbo@xjtu.edu.cn ; Li Pei, lipei0916@xjtu.edu.cn ; He Chao-Hui, hechaohui@xjtu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11975179).

文章全文 : translate this paragraph

参考文献

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施引文献

图 1 位移损伤模型　(a) 薄靶近似模型; (b) 无限厚靶模型

Fig. 1. Displacement damage models: (a) Thin target approximation model; (b) infinite thick target model.

下载: 全尺寸图片幻灯片

图 2 不同能量质子在 GaN材料中产生的 NIEL大小, 与文献[21]值比较

Fig. 2. The values of NIEL in GaN material induced by protons with different energies, compared with values from Ref. [21].

下载: 全尺寸图片幻灯片

图 3 不同能量质子在Al_xGa_1–xN材料中产生的 NIEL大小

Fig. 3. The values of NIEL in Al_xGa_1–xN materials induced by protons with different energies.

下载: 全尺寸图片幻灯片

图 4 不同能量质子在 GaN材料中产生的 PKA 信息　(a) PKA总能谱; (b) 不同类型 PKA占比

Fig. 4. PKA information induced by protons with different energies in GaN material: (a) Overall PKA energy spectra; (b) fraction of different types of PKA.

下载: 全尺寸图片幻灯片

图 5 不同能量质子在Al_xGa_1–xN材料中产生弹性碰撞事件的占比

Fig. 5. The fraction of elastic collision events in Al_xGa_1–xN materials induced by protons with different energies.

下载: 全尺寸图片幻灯片

图 6 不同能量质子在Al_xGa_1–xN材料中沉积的T_dam随深度分布　(a) 150 keV; (b) 10 MeV; (c) 50 MeV; (d) 200 MeV

Fig. 6. Distribution of deposited T_dam with depth in Al_xGa_1–xN materials irradiated by protons with different energies: (a) 150 keV; (b) 10 MeV; (c) 50 MeV; (d) 200 MeV.

下载: 全尺寸图片幻灯片

图 7 (a) 150 keV, (b) 10 MeV, (c) 50 MeV, (d) 200 MeV质子在 GaN 材料中沉积的 T_dam (红色) 以及产生的PKA 数目 (蓝色) 随深度分布, 其中实线为弹性碰撞事件, 虚线为非弹性碰撞事件

Fig. 7. Distribution of deposited T_dam (Red) and produced PKAs (Blue) with depth in Al_xGa_1–xN mate rials irradiated by protons of (a) 150 keV, (b )10 MeV, (c) 50 MeV, (d) 200 MeV. The solid lines and the dashed lines correspond to elastic and inelastic collision events.

下载: 全尺寸图片幻灯片

[1]	郝跃, 张金风, 张进成, 马晓华, 郑雪峰 2015 科学通报 10 874 Hao Y, Zhang J F, Zhang J C, Ma X H, Zheng X F 2015 Chin. Sci. Bull. 10 874
[2]	Zhang Y, Dadgar A, Palacios T 2018 J. Phys. D: Appl. Phys 51 273001
[3]	Pearton S, Ren F, Patrick E, Law M, Polyakov A Y 2015 ECS J. Solid State Sci. Technol. 5 Q35 Google Scholar
[4]	Richard Y, Guzmann D, Smith D 2014 The 4S Symposium Majorca, Spain, May 26–30, 2014 p20141
[5]	Valenta V, Loughnane G, Espana C, Latti J, Barnes A, Roux J P, del Rio O, Rubio-Cidre G, Ramirez-Torres M, Serru V, Caille L 2022 17th European Microwave Integrated Circuits Conference (EuMIC) Milan, Italy, September 26–27, 2022 p41
[6]	陈伟, 杨海亮, 郭晓强, 姚志斌, 丁李利, 王祖军, 王晨辉, 王忠明, 丛培天 2017 科学通报 10 978 Chen W, Yang H L, Guo X Q, Yao Z B, Ding L L, Wang Z J, Wang C H, Wang Z M, Cong P T 2017 Chin. Sci. Bull. 10 978
[7]	Hu X, Choi B K, Barnaby H J, Fleetwood D M, Schrimpf R D, Lee S, Shojah- Ardalan S, Wilkins R, Mishra U K, Dettmer R W 2004 IEEE T. Nucl. Sci. 51 293 Google Scholar
[8]	Zhu T, Zheng X F, Wang J, Wang M S, Chen K, Wang X H, Du M, Ma P J, Zhang H, Lv L, Cao Y R, Ma X H, Hao Y, 2021 IEEE T. Nucl. Sci. 68 2616 Google Scholar
[9]	Chen J, Puzyrev Y S, Jiang R, Zhang E X, McCurdy M W, Fleetwood D M, Schrimpf R D, Pantelides S T, Arehart A R, Ringel S A, Saunier P, Lee C 2015 IEEE T. Nucl. Sci. 62 2423 Google Scholar
[10]	He H, Liao W L, Wang Y Z, Liu W B, Zang H, He C H 2021 Comput. Mater. Sci. 196 110554 Google Scholar
[11]	Lo C, Chang C, Chu B, Kim H Y, Kim J, Cullen D A, Zhou L, Smith D, Pearton S, Dabiran A, Ren F 2010 J. Vac. Sci. Technol. B 28 L47 Google Scholar
[12]	Lü L, Ma J G, Cao Y R, Zhang J C, Zhang W, Li L, Xu S R, Ma X H, Ren X T, Hao Y 2011 Microelectron. Reliab. 51 2168 Google Scholar
[13]	Lyons J L, Wickramaratne D, Van de Walle C G 2021 J. Appl. Phys. 129 111101 Google Scholar
[14]	Wan P F, Li W Q, Xu X D, Wei Y D, Jiang H, Yang J Q, Shao G J, Lin G, Peng C, Zhang Z G, Li X J 2022 Appl. Phys. Lett. 121 092102 Google Scholar
[15]	Wang Y Z, Zheng X F, Zhu T, Yue S Z, Pan A L, Xu S R, Li P X, Ma X H, Zhang J C, Guo L X, Hao Y 2023 Appl. Phys. Lett. 122 143501 Google Scholar
[16]	Weaver B, Martin P, Boos J, Cress C 2012 IEEE T. Nucl. Sci. 59 3077 Google Scholar
[17]	Zhang Z, Arehart A R, Cinkilic E, Chen J, Zhang E X, Fleetwood D M, Schrimpf R D, McSkimming B, Speck J S, Ringel S A 2013 Appl. Phys. Lett. 103 042102 Google Scholar
[18]	He H, He C H, Zhang J H, Liao W L, Zang H, Li Y H, Liu W B 2020 Nucl. Eng. Technol. 52 1537 Google Scholar
[19]	Akkerman A, Barak J, Chadwick M, Levinson J, Murat M, Lifshitz Y 2001 Radiat. Phys. Chem. 62 301 Google Scholar
[20]	Akkerman A, Barak J, Murat M 2020 IEEE T. Nucl. Sci. 67 1813 Google Scholar
[21]	Khanna S M, Estan D, Erhardt L S, Houdayer A, Carlone C, Ionascut- Nedelcescu A, Messenger S R, Walters R J, Summers G P, Warner J H, Jun I 2004 IEEE T. Nucl. Sci. 51 2729 Google Scholar
[22]	Liu L, Mei B, Zheng Z S, Wang L, Bai Y R, Yu Q K, Li P, Zhao H D, Sun Y C, Li B 2023 T. Trans. Nucl. Sci. 70 1885 Google Scholar
[23]	Nord J, Nordlund K, Keinonen J 2003 Phys. Rev. B 68 184104 Google Scholar
[24]	唐杜, 贺朝会, 臧航, 李永宏, 熊涔, 张晋新, 张鹏, 谭鹏康 2016 物理学报 65 024212 Google Scholar Tang D, He C H, Zang H, Li Y H, Xiong C, Zhang J X, Zhang P, Tan P K 2016 Acta Phys. Sin. 65 024212 Google Scholar
[25]	谢飞, 臧航, 刘方, 何欢, 廖文龙, 黄煜 2020 物理学报 69 192401 Google Scholar Xie F, Zang H, Liu F, He H, Liao W L, Huang Y 2020 Acta Phys. Sin. 69 192401 Google Scholar
[26]	Chen N J, Rasch E, Huang D H, Heller E R, Gao F 2018 IEEE T. Nucl. Sci. 65 1108 Google Scholar
[27]	Keum D, Kim H 2018 ECS J. Solid State Sci. Technol 7 Q159 Google Scholar
[28]	Hayes M, Auret F, Wu L, Meyer W, Nel J, Legodi M 2003 Physica B 340 421 Google Scholar
[29]	Jun I, Xapsos M A, Burke E A 2004 IEEE T. Nucl. Sci. 51 3207 Google Scholar
[30]	Jun I, Xapsos M A, Messenger S R, Burke E A, Walters R J, Summers G P, Jordan T 2003 IEEE T. Nucl. Sci. 50 1924 Google Scholar
[31]	Lindhard J, Nielsen V, Scharff M, Thomsen P 1963 Kgl. Danske Videnskab., Selskab. Mat. Fys. Medd. 33 1
[32]	Robinson M T 1994 J. Nucl. Mater. 216 1 Google Scholar
[33]	Akkerman A, Barak J 2006 IEEE T. Nucl. Sci. 53 3667 Google Scholar
[34]	Allison J, Amako K, Apostolakis J, Araujo H, Dubois P A, Asai M, Barrand G, Capra R, Chauvie S, Chytracek R 2006 IEEE T. Nucl. Sci. 53 270 Google Scholar
[35]	Agostinelli S, Allison J, Amako K a, Apostolakis J, Araujo H, Arce P, Asai M, Axen D, Banerjee S, Barrand G 2003 Nucl. Instrum. Methods Phys. Res. A 506 250 Google Scholar
[36]	Weller R A, Mendenhall M H, Fleetwood D M 2004 IEEE T. Nucl. Sci. 51 3669 Google Scholar
[37]	Mendenhall M H, Weller R A 2005 Nucl. Instrum. Methods Phys. Res. B 227 420 Google Scholar
[38]	Xiao H, Gao F, Zu X T, Weber W J 2009 J. Appl. Phys. 105 123527 Google Scholar
[39]	Xi J, Liu B, Zhang Y, Weber W J 2018 J. Appl. Phys. 123 045904 Google Scholar
[40]	Raine M, Jay A, Richard N, Goiffon V, Girard S, Gaillardin M, Paillet P 2016 IEEE T. Nucl. Sci. 64 133 Google Scholar
[41]	Jay A, Raine M, Richard N, Mousseau N, Goiffon V, Hémeryck A, Magnan P 2016 IEEE T. Nucl. Sci. 64 141 Google Scholar
[42]	Stoller R E 2000 J. Nucl. Mater. 276 22 Google Scholar
[43]	Rayaprolu R, Möller S, Linsmeier C, Spellerberg S 2016 Nucl. Mater. Energy 9 29 Google Scholar
[44]	Wirth B D, Odette G R, Marian J, Ventelon L, Young-Vandersall J A, Zepeda-Ruiz L A 2004 J. Nucl. Mater. 329 103 Google Scholar

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质子入射Al_xGa_1–xN 材料的位移损伤模拟