509 nm高功率宽调谐外腔面发射激光器

王涛; 彭雪芳; 贺亮; 沈小雨; 朱仁江; 蒋丽丹; 佟存柱; 宋晏蓉; 张鹏

doi:10.7498/aps.73.20240499

摘要

报道了一种高功率宽调谐外腔面发射绿光激光器, 利用设计的1018 nm半导体增益芯片、折叠镜以及后端镜构成结构紧凑的V型腔, 使用长度为10 mm的I类相位匹配三硼酸锂(LiB₃O₅, LBO)非线性频率变换晶体进行腔内倍频, 实现了509 nm波长的高功率绿光输出. 通过在腔内插入双折射滤波片(birefringent filter, BRF), 可获得连续调谐的激光波长. 当BRF厚度为1 mm时, 基频激光和倍频绿光的波长调谐范围分别为47.1 nm 和20.1 nm. 可调谐绿光的最大输出功率为8.23 W, 对应的倍频转换效率为68.2%, 相应的从吸收泵浦光到倍频绿光的光-光转换效率为16.6%.

关键词:

Abstract

High power widely tunable green lasers have potential applications in many fields such as biomedicine, lidar, laser spectroscopy, laser display, underwater wireless optical communication, and fine processing of nonferrous metals. Vertical-external-cavity surface-emitting lasers, also known as semiconductor disk lasers, have the advantages of high power, good beam quality, and wide bandwidth of gain medium. In this work, a gain chip with a reverse-growth epitaxy structure and an emitting wavelength of 1018 nm is designed. In the DBR reflection spectrum, a bandwidth of 74 nm is achieved above a reflectivity of greater than 99.1%, laying a solid foundation for achieving high-power widely tunable output. The laser cavity combines a 1018 nm semiconductor gain chip, a folded mirror, and a plane mirror to construct a compact V-type resonant cavity. A class-I phase-matched LBO nonlinear crystal with a length of 10 mm is placed at the beam waist of the cavity to realize an efficient frequency doubling process to produce a 509 nm green laser. To meet the requirement for the polarization during frequency conversion and to tune the oscillating wavelength of the laser, a birefringent filter (BRF) is employed in the laser resonant cavity. When the thickness of the used BRF is 1 mm, the obtained wavelength tuning range of the fundamental laser and the frequency doubled green laser are 47.1 nm and 20.1 nm, respectively, showing a good tuning capability of the laser. The laser’s performance varies with the thickness of the BRF. When using a 2 mm BRF, a maximum power output of the frequency-doubled green laser reaches 8.23 W during continuous tuning, indicating an ideal compatibility of wide tuning characteristics with a high power output. Meanwhile, its beam quality M ² factors are 1.00 and 1.03 in the x- and y-direction, respectively, demonstrating a near diffraction-limited excellent beam quality. This green laser also possesses a frequency doubling conversion efficiency of up to 68.2%, which can efficiently converse the fundamental laser into the frequency doubled green laser. The optical-to-optical conversion efficiency from the absorbed pump light to the frequency-doubled green light also reaches 16.6%. Meanwhile, from the spectral linewidths of the green lasers under different thickness values of BRFs it is found that the thicker the BRF, the narrower the laser line width is, which is consistent with the theoretical result.

Keywords:

external cavity surface emitting laser /
intracavity frequency doubling /
green laser birefringent filter /
tunable laser

作者及机构信息

1.
重庆师范大学物理与电子工程学院, 重庆　401331

2.
中国科学院长春光学精密机械与物理研究所, 长春　130033

3.
北京工业大学理学部, 北京　100124

4.
重庆师范大学重庆国家应用数学中心, 重庆　401331

通信作者: 张鹏, zhangpeng2010@cqnu.edu.cn

基金项目: 在渝本科高校与中国科学院所属院所合作项目(批准号: HZ2021007)、重庆市教委科技研究计划(批准号: KJQN202200557, KJQN202300525)、国家自然科学基金(批准号: 61975003, 61790584, 62025506)和重庆师范大学(人才引进/博士点)基金 (批准号: 23XLB003)资助的课题.

Authors and contacts

1.
College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China

2.
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences,Changchun 130033, China

3.
Faculty of Sciences, Beijing University of Technology, Beijing 100124, China

4.
National Center for Applied Mathematics in Chongqing, Chongqing Normal University, Chongqing 401331, China

Corresponding author: Zhang Peng, zhangpeng2010@cqnu.edu.cn

Funds: Project supported by the Cooperation Project between Chongqing Local Universities and Institutions of Chinese Academy of Sciences, Chongqing Municipal Education Commission, China (Grant No. HZ2021007), the Science and Technology Research Program of Chongqing Municipal Education Commission, China (Grant Nos. KJQN202200557, KJQN202300525), the National Natural Science Foundation of China (Grant Nos. 61975003, 61790584, 62025506), and the Chongqing Normal University Foundation, China (Grant No. 23XLB003).

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参考文献

[1]	徐庆扬, 陈少武 2004 物理 33 508 Google Scholar Xu Q Y, Chen S W 2004 Physics 33 508 Google Scholar
[2]	周远航, 张健, 冯爱新, 尚大智, 陈云, 唐杰, 杨海华 2021 中国激光 48 0602116 Google Scholar Zhou Y H, Zhang J, Feng A X, Shang D Z, Chen Y, Tang J, Yang H H 2021 Chin. J. Lasers 48 0602116 Google Scholar
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[11]	Wu Y, Shen Y, Addamane S, Reno J L, Williams B S 2021 Opt. Express 29 34695 Google Scholar
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[14]	Nakdali D A, Gaafar M, Shakfa M K, Zhang F, Vaupel M, Fedorova K A, Koch M 2015 IEEE Photonic. Tech. L. 27 1128 Google Scholar
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[16]	Qiu X L, Wang C, Li J, Li C C, Xie X Y, Wang Y L, Wei X 2022 IEEE Photonics J. 14 1545707 Google Scholar
[17]	Maclean A J, Kemp A J, Calvez S, Kim J Y, Kim T, Dawson M D, Burns D 2008 IEEE J. Quantum Elect. 44 216 Google Scholar
[18]	Lin J P, Helen M P, David J S, Craig J H, Malcolm-Graeme P A 2012 Opt. Express 20 5219 Google Scholar
[19]	Hein A, Menzel S, Unger P 2012 Appl. Phys. Lett. 101 111109 Google Scholar
[20]	Lukowski M, Hessenius C, Fallahi M 2014 IEEE J. Sel. Top. Quant. 21 432 Google Scholar
[21]	邱小浪, 陈雪花, 朱仁江, 张鹏, 郭于鹤洋, 宋晏蓉 2019 中国激光 46 0401002 Google Scholar Qiu X L, Chen X H, Zhu R J, Zhang P, Guo Y H Y, Song Y R 2019 Chin. J. Lasers 46 0401002 Google Scholar
[22]	Boyd G D, Kleinman D A 1968 J. Appl. Phys. 39 3597 Google Scholar
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施引文献

图 1 (a) VECSEL外延片结构示意图; (b) 增益芯片的反射谱及荧光谱

Fig. 1. (a) Schematics of the epitaxial structure of the VECSEL wafer; (b) the reflection spectrum and the PL spectrum of the gain chip.

下载: 全尺寸图片幻灯片

图 2 (a) 倍频绿光VECSEL的V型谐振腔结构图; (b) 实验装置实物图

Fig. 2. (a) The V-type resonant cavity of the frequency-doubled green VECSEL; (b) the photograph of the experimental setup.

下载: 全尺寸图片幻灯片

图 3 V型谐振腔内基频激光腔模半径随位置的变化

Fig. 3. Changes of the cavity mode in the V-type cavity with various position.

下载: 全尺寸图片幻灯片

图 4 BRF厚度为1 , 2, 4 mm时基频激光的波长调谐范围

Fig. 4. Tuning range of the fundamental laser with BRF thicknesses of 1, 2, and 4 mm.

下载: 全尺寸图片幻灯片

图 5 BRF厚度为1, 2, 4 mm倍频绿光的波长调谐范围

Fig. 5. Tuning range of the frequency-doubled green laser with BRF thicknesses of 1, 2, and 4 mm.

下载: 全尺寸图片幻灯片

图 6 腔内插入厚度为1, 2, 4 mm的BRF时倍频绿光的输出功率曲线

Fig. 6. Output powers of the frequency-doubled green laser under different BRF thicknesses of 1, 2, and 4 mm.

下载: 全尺寸图片幻灯片

图 7 (a) 基频激光与倍频绿光功率对比曲线; (b) 吸收泵浦光到倍频绿光转换效率曲线

Fig. 7. (a) Comparison of the output powers of the fundamental laser and the frequency-doubled green laser; (b) the optical-to-optical efficiency from absorbed pump laser to green laser.

下载: 全尺寸图片幻灯片

图 8 自由运转及插入不同厚度BRF时VECSEL的光谱线宽

Fig. 8. Spectral linewidths of the VECSEL under free operation and inserting BRF with different thicknesses.

下载: 全尺寸图片幻灯片

表 1 可调谐绿光VECSEL的主要结果

Table 1. Reported experimental results of tunable green VECSEL.

年份	研究单位	中心波长/nm	调谐范围/nm	输出功率/W	转换效率/%	文献
2008年	University of Strathclyde	530	10	1	11	[17]
2012年	Macquarie University	560	17.5	0.8	4.2	[18]
2012年	Ulm University	520	22	4.1	22	[19]
2014年	University of Arizona	532	5	2	5	[20]
2019年	重庆师范大学	559	4	65 mW	3.3	[21]
2024年	本工作	509	20.1	8.23	16.6

下载: 导出CSV

[1]	徐庆扬, 陈少武 2004 物理 33 508 Google Scholar Xu Q Y, Chen S W 2004 Physics 33 508 Google Scholar
[2]	周远航, 张健, 冯爱新, 尚大智, 陈云, 唐杰, 杨海华 2021 中国激光 48 0602116 Google Scholar Zhou Y H, Zhang J, Feng A X, Shang D Z, Chen Y, Tang J, Yang H H 2021 Chin. J. Lasers 48 0602116 Google Scholar
[3]	金熙, 张磊, 周颖, 王磊, 曹芬芬 2019 中国激光医学杂志 28 308 Google Scholar Jin X, Zhang L, Zhou Y, Wang L, Chao F F 2019 Chin. J. Laser Med. Surg. 28 308 Google Scholar
[4]	聂伟, 阚瑞峰, 杨晨光, 陈兵, 许振宇, 刘文清 2018 中国激光 45 0911001 Google Scholar Nie W, Kan R F, Yang C G, Chen B, Xu Z Y, Liu W Q 2018 Chin. J. Lasers 45 0911001 Google Scholar
[5]	林宏, 王新民, 卢金军, 李卫中 2010 激光与光电子学进展 47 120101 Google Scholar Lin H, Wang X M, Lu J J, Li W Z 2010 Laser Optoelectron. P. 47 120101 Google Scholar
[6]	Rahimi-Iman A 2016 J. Optics-UK 18 093003 Google Scholar
[7]	Guina M, Rantamäki A, Härkönen A 2017 J. Phy. D Appl. Phys. 50 383001 Google Scholar
[8]	Mangold M, Wittwer V J, Sieber O D 2012 Opt. Express 20 4136 Google Scholar
[9]	Chang-Hasnain C J. 2000 IEEE J. Sel. Top. Quant. 6 978 Google Scholar
[10]	李慧娟, 张淼, 李凤琴 2016 中国激光 43 0302003 Google Scholar Li H J, Zhang M, Li F Q 2016 Chin. J. Lasers 43 0302003 Google Scholar
[11]	Wu Y, Shen Y, Addamane S, Reno J L, Williams B S 2021 Opt. Express 29 34695 Google Scholar
[12]	Borgentun C, Bengtsson J, Larsson A, Demaria F, Hein A, Unger P 2010 Semiconductor Lasers and Laser Dynamics IV. SPIE Brussels Belgium April 3, 2010 p7720247
[13]	Borgentun C, Hessenius C, Bengtsson J, Fallahi M, Larsson A 2011 IEEE Photonics J. 3 946 Google Scholar
[14]	Nakdali D A, Gaafar M, Shakfa M K, Zhang F, Vaupel M, Fedorova K A, Koch M 2015 IEEE Photonic. Tech. L. 27 1128 Google Scholar
[15]	Broda A, Wójcik-Jedlińska A, Sankowska I, Wasiak M, Wieckowska M, Muszalski J 2017 IEEE Photonic. Tech. L. 29 2215 Google Scholar
[16]	Qiu X L, Wang C, Li J, Li C C, Xie X Y, Wang Y L, Wei X 2022 IEEE Photonics J. 14 1545707 Google Scholar
[17]	Maclean A J, Kemp A J, Calvez S, Kim J Y, Kim T, Dawson M D, Burns D 2008 IEEE J. Quantum Elect. 44 216 Google Scholar
[18]	Lin J P, Helen M P, David J S, Craig J H, Malcolm-Graeme P A 2012 Opt. Express 20 5219 Google Scholar
[19]	Hein A, Menzel S, Unger P 2012 Appl. Phys. Lett. 101 111109 Google Scholar
[20]	Lukowski M, Hessenius C, Fallahi M 2014 IEEE J. Sel. Top. Quant. 21 432 Google Scholar
[21]	邱小浪, 陈雪花, 朱仁江, 张鹏, 郭于鹤洋, 宋晏蓉 2019 中国激光 46 0401002 Google Scholar Qiu X L, Chen X H, Zhu R J, Zhang P, Guo Y H Y, Song Y R 2019 Chin. J. Lasers 46 0401002 Google Scholar
[22]	Boyd G D, Kleinman D A 1968 J. Appl. Phys. 39 3597 Google Scholar
[23]	Smith A V 2018 Crystal Nonlinear Optics: With SNLO Examples (Albuquerque: AS-Photonics
[24]	Smith A V 2003 Proc. SPIE 4972 50 Google Scholar

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