Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET

Zheng Zhong-Shan; Liu Zhong-Li; Zhang Guo-Qiang; Li Ning; Fan Kai; Zhang En-Xia; Yi Wan-Bing; Chen Meng; Wang Xi

doi:10.7498/aps.54.348

Abstract
The effects, caused by the process of the implantation of nitrogen in the buried oxide layer of SIMOX wafer, on the characteristics of partially depleted silicon_on_insulator nMOSFET have been studied. The experimental results show that the channel electron mobilities of the devices fabricated on the SIMON (separation by implanted oxygen and nitrogen) wafers are lower than those of the devices made on the SIMOX (separation by implanted oxygen) wafers. The devices corresponding to the lowest implantation dose have the lowest mobility within the range of the implantation dose given in this paper. The value of the channel electron mobility rises slightly and tends to a limit when the implantation dose becomes greater. This is explained in terms of the rough Si/SiO2 interface due to the process of implantation of nitrogen. The increasing negative shifts of the thre shold voltages for the devices fabricated on the SIMON wafers are also observed with the increase of implanting dose of nitrogen. However, for the devices fabri cated on the SIMON wafers with the lowest dose of implanted nitrogen in this pap er, their threshold voltages are slightly larger on the average than those prepa red on the SIMOX wafers. The shifts are considered to be due to the increment of the fixed oxide charge in SiO2 layer and the change of the density of the int erface-trapped charge with the value and distribution included. In particular, t he devices fabricated on the SIMON wafers show a weakened kink effect, compared to the ones made on the SIMOX wafers.

Keywords:
SOI /

nMOSFET /

nitrogen implantation /

electron mobility /

threshold voltage
Authors and contacts
Zheng Zhong-Shan²,

Liu Zhong-Li¹,

Zhang Guo-Qiang¹,

Li Ning¹,

Fan Kai¹,

Zhang En-Xia³,

Yi Wan-Bing³,

Chen Meng³,

Wang Xi³

(1)中国科学院半导体研究所微电子研究与发展中心,北京 100083; (2)中国科学院半导体研究所微电子研究与发展中心,北京 100083;济南大学物理系，济南 250022; (3)中国科学院上海微系统与信息技术研究所,上海 200050
References

Cited By

[1]	Peng Teng, Wang Hui-Yao, Zhao Xi, Liu Jun-Hong, Wang Bo, Wang Jing-Jing, Zhou Yin-Qiong, Zhang Ke-Yi, Yang Jun, Xiong Zu-Hong. Modulation of half-band-gap turn-on electroluminescence in Rubrene/C₆₀ based OLEDs by electron injection layer mobility. Acta Physica Sinica, 2024, 73(21): 217202. doi: 10.7498/aps.73.20240864
[2]	Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A Model of channel current for uniaxially strained Si NMOSFET. Acta Physica Sinica, 2015, 64(19): 197301. doi: 10.7498/aps.64.197301
[3]	Song Jian-Jun, Yang Chao, Zhu He, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Shu Bin. Structure design and frequency characteristics of SOI SiGe HBT. Acta Physica Sinica, 2014, 63(11): 118501. doi: 10.7498/aps.63.118501
[4]	Yu Yao, Zhang Jing-Si, Chen Dai-Dai, Guo Rui-Qian, Gu Zhi-Hua. Improving the mobility of the amorphous silicon TFT with the new stratified structure by PECVD. Acta Physica Sinica, 2013, 62(13): 138501. doi: 10.7498/aps.62.138501
[5]	Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Su Bin, Wang Bin, Wang Guan-Yu. Physical compact modeling for threshold voltage of strained Si NMOSFET. Acta Physica Sinica, 2013, 62(7): 077103. doi: 10.7498/aps.62.077103
[6]	Yang Fu-Jun, Ban Shi-Liang. Influence of optical-phonon scattering on electron mobility in wurtzite AlGaN/AlN/GaN heterostructures. Acta Physica Sinica, 2012, 61(8): 087201. doi: 10.7498/aps.61.087201
[7]	Zhang Bin, Yang Yin-Tang, Li Yue-Jin, Xu Xiao-Bo. Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2012, 61(23): 238502. doi: 10.7498/aps.61.238502
[8]	Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2011, 60(1): 017202. doi: 10.7498/aps.60.017202
[9]	Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong. Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate. Acta Physica Sinica, 2011, 60(5): 058502. doi: 10.7498/aps.60.058502
[10]	Wang Xiao-Yan, Zhang He-Ming, Song Jian-Jun, Ma Jian-Li, Wang Guan-Yu, An Jiu-Hua. Electron mobility of strained Si/(001)Si1- x Ge x. Acta Physica Sinica, 2011, 60(7): 077205. doi: 10.7498/aps.60.077205
[11]	Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong. Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI. Acta Physica Sinica, 2011, 60(11): 118501. doi: 10.7498/aps.60.118501
[12]	Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Xu Li-Jun, Ma Jian-Li. A collector space charge region model for SiGe HBT on thin-film SOI. Acta Physica Sinica, 2011, 60(7): 078502. doi: 10.7498/aps.60.078502
[13]	Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin. Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET. Acta Physica Sinica, 2011, 60(7): 077106. doi: 10.7498/aps.60.077106
[14]	Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong. An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica, 2011, 60(9): 097302. doi: 10.7498/aps.60.097302
[15]	Yu Zong-Guang, Xiao Zhi-Qiang, Zhou Xin-Jie, Li Lei-Lei. Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation. Acta Physica Sinica, 2011, 60(9): 098502. doi: 10.7498/aps.60.098502
[16]	Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming. The threshold voltage of SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica, 2009, 58(1): 494-497. doi: 10.7498/aps.58.494
[17]	Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun. Threshold voltage model of strained Si channel nMOSFET. Acta Physica Sinica, 2009, 58(7): 4948-4952. doi: 10.7498/aps.58.4948
[18]	Qiao Ming, Zhang Bo, Li Zhao-Ji, Fang Jian, Zhou Xian-Da. Analysis of the back-gate effect on the breakdown behavior of lateral high-voltage SOI transistors. Acta Physica Sinica, 2007, 56(7): 3990-3995. doi: 10.7498/aps.56.3990
[19]	Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica, 2007, 56(6): 3504-3508. doi: 10.7498/aps.56.3504
[20]	Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E. An analytical model of MOSFET threshold voltage with considiring the quantum effects. Acta Physica Sinica, 2005, 54(2): 897-901. doi: 10.7498/aps.54.897

Catalog

Vol. 54, Issue 1 - 2005-01-05

Metrics

Abstract views: 7290
PDF Downloads: 907
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About