| [1] |
Li Yang-Fan, Guo Hong-Xia, Zhang Hong, Bai Ru-Xue, Zhang Feng-Qi, Ma Wu-Ying, Zhong Xiang-Li, Li Ji-Fang, Lu Xiao-Jie. Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica,
2024, 73(2): 026103.
doi: 10.7498/aps.73.20231440
|
| [2] |
Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao. Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2024, 73(11): 118501.
doi: 10.7498/aps.73.20240144
|
| [3] |
Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong. Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage. Acta Physica Sinica,
2023, 72(13): 138501.
doi: 10.7498/aps.72.20230207
|
| [4] |
Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming. Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2017, 66(7): 076101.
doi: 10.7498/aps.66.076101
|
| [5] |
Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu. A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2015, 64(6): 067305.
doi: 10.7498/aps.64.067305
|
| [6] |
Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang. Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2014, 63(23): 237304.
doi: 10.7498/aps.63.237304
|
| [7] |
Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng. Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica,
2014, 63(23): 237302.
doi: 10.7498/aps.63.237302
|
| [8] |
Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao. Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs. Acta Physica Sinica,
2014, 63(14): 148502.
doi: 10.7498/aps.63.148502
|
| [9] |
Fan Min-Min, Xu Jing-Ping, Liu Lu, Bai Yu-Rong, Huang Yong. Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET. Acta Physica Sinica,
2014, 63(8): 087301.
doi: 10.7498/aps.63.087301
|
| [10] |
Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao. Two-dimensional model of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielectric. Acta Physica Sinica,
2014, 63(24): 248502.
doi: 10.7498/aps.63.248502
|
| [11] |
Chen Hai-Feng. Characteristics of gate-modulated generation current under the reverse substrate bias in nano-nMOSFET. Acta Physica Sinica,
2013, 62(18): 188503.
doi: 10.7498/aps.62.188503
|
| [12] |
Xu Li-Jun, Zhang He-Ming. Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor. Acta Physica Sinica,
2013, 62(10): 108502.
doi: 10.7498/aps.62.108502
|
| [13] |
Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen. Study on gate capacitance-voltage characteristics of strained-SiGe pMOSFET. Acta Physica Sinica,
2013, 62(12): 127102.
doi: 10.7498/aps.62.127102
|
| [14] |
Fan Xue, Li Wei, Li Ping, Zhang Bin, Xie Xiao-Dong, Wang Gang, Hu Bin, Zhai Ya-Hong. Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layouts. Acta Physica Sinica,
2012, 61(1): 016106.
doi: 10.7498/aps.61.016106
|
| [15] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica,
2012, 61(10): 107803.
doi: 10.7498/aps.61.107803
|
| [16] |
Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin. Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate. Acta Physica Sinica,
2012, 61(10): 107301.
doi: 10.7498/aps.61.107301
|
| [17] |
Wu Tie-Feng, Zhang He-Ming, Wang Guan-Yu, Hu Hui-Yong. Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor. Acta Physica Sinica,
2011, 60(2): 027305.
doi: 10.7498/aps.60.027305
|
| [18] |
Zhou Hai-Liang, Zhang Min-Xuan, Fang Liang. Dual-gate-material-based device design for unipolar metal oxide semiconductor-like carbon nanotube field effect transistors. Acta Physica Sinica,
2010, 59(7): 5010-5017.
doi: 10.7498/aps.59.5010
|
| [19] |
Liu Yu-An, Du Lei, Bao Jun-Lin. Research on correlation of 1/fγ noise and hot carrier degradation in metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2008, 57(4): 2468-2475.
doi: 10.7498/aps.57.2468
|
| [20] |
REN HONG-XIA, HAO YUE, XU DONG-GANG. STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica,
2000, 49(7): 1241-1248.
doi: 10.7498/aps.49.1241
|
下载:
