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Tan Zai-Shang, Wu Xiao-Meng, Fan Zhong-Yong, Ding Shi-Jin. Effect of thermal annealing on the structure and properties of plasma enhanced chemical vapor deposited SiCOH film. Acta Physica Sinica,
2015, 64(10): 107701.
doi: 10.7498/aps.64.107701
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He Su-Ming, Dai Shan-Shan, Luo Xiang-Dong, Zhang Bo, Wang Jin-Bin. Preparation of SiON film by plasma enhanced chemical vapor deposition and passivation on Si. Acta Physica Sinica,
2014, 63(12): 128102.
doi: 10.7498/aps.63.128102
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Gao Hai-Bo, Li Rui, Lu Jing-Xiao, Wang Guo, Li Xin-Lin, Jiao Yue-Chao. High-rate deposition of microcrystalline silicon thin film by multi-step method. Acta Physica Sinica,
2012, 61(1): 018101.
doi: 10.7498/aps.61.018101
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Yuan He, Sun Chang-Zheng, Xu Jian-Ming, Wu Qing, Xiong Bing, Luo Yi. Design and fabrication of multilayer antireflection coating for optoelectronic devices by plasma enhanced chemical vapor deposition. Acta Physica Sinica,
2010, 59(10): 7239-7244.
doi: 10.7498/aps.59.7239
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Li Yu-Jie, Xie Kai, Li Xiao-Dong, Xu Jing, Han Yu, Du Pan-Pan. Fabrication of germanium inverse opal three-dimensional photonic crystal by low temperature plasma enhanced chemical vapour deposition techniques and optical properties. Acta Physica Sinica,
2010, 59(3): 1839-1846.
doi: 10.7498/aps.59.1839
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Ding Yan-Li, Zhu Zhi-Li, Gu Jin-Hua, Shi Xin-Wei, Yang Shi-E, Gao Xiao-Yong, Chen Yong-Sheng, Lu Jing-Xiao. Effect of deposition rate on the scaling behavior of microcrystalline silicon films prepared by very high frequency-plasma enhanced chemical vapor deposition. Acta Physica Sinica,
2010, 59(2): 1190-1195.
doi: 10.7498/aps.59.1190
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Wang Guang-Hong, Zhang Xiao-Dan, Xu Sheng-Zhi, Sun Fu-He, Yue Qiang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying. Effects of p-seeding layer on the performance of microcrystalline silicon solar cells deposited in single chamber. Acta Physica Sinica,
2009, 58(10): 7294-7299.
doi: 10.7498/aps.58.7294
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Sun Fu-He, Zhang Xiao-Dan, Wang Guang-Hong, Xu Sheng-Zhi, Yue Qiang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying. Influence of boron on the properties of intrinsic microcrystalline silicon thin films. Acta Physica Sinica,
2009, 58(2): 1293-1297.
doi: 10.7498/aps.58.1293
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Han Xiao-Yan, Hou Guo-Fu, Li Gui-Jun, Zhang Xiao-Dan, Yuan Yu-Jie, Zhang De-Kun, Chen Xin-Liang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua. Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline silicon solar cells. Acta Physica Sinica,
2008, 57(8): 5284-5289.
doi: 10.7498/aps.57.5284
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Yang Hang-Sheng. Surface growth mechanism of cubic boron nitride thin films prepared by plasma-enhanced chemical vapor deposition. Acta Physica Sinica,
2006, 55(8): 4238-4246.
doi: 10.7498/aps.55.4238
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Zhang Xiao-Dan, Zhao Ying, Gao Yan-Tao, Zhu Feng, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen. Fabrication of microcrystalline silicon thin film and the study of its microstructure and stability. Acta Physica Sinica,
2005, 54(8): 3910-3914.
doi: 10.7498/aps.54.3910
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Zhang Xiao-Dan, Zhao Ying, Zhu Feng, Wei Chang-Chun, Wu Chun-Ya, Gao Yan-Tao, Hou Guo-Fu, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen. A study of Raman and optical emission spectroscopy on microcrystalline silicon films deposited by VHF-PECVD. Acta Physica Sinica,
2005, 54(1): 445-449.
doi: 10.7498/aps.54.445
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Zhang Xiao-Dan, Zhao Ying, Zhu Feng, Wei Chang-Chun, Mai Yao-Hua, Gao Yan-Tao, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen. Secondary ion mass spectroscopic depth profile analysis of oxygen contamination in hydrogenated microcrystalline silicon. Acta Physica Sinica,
2005, 54(4): 1895-1898.
doi: 10.7498/aps.54.1895
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Zhang Xiao-Dan, Zhao Ying, Gao Yan-Tao, Zhu Feng, Wei Chang-Chun, Sun Jian, Wang Yan, Geng Xin-Hua, Xiong Shao-Zhen. Study of microcrystalline silicon solar cells fabricated by very high frequency plasma-enhanced chemical vapor deposition. Acta Physica Sinica,
2005, 54(4): 1899-1903.
doi: 10.7498/aps.54.1899
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Zeng Xiang-Bo, Liao Xian-Bo, Wang Bo, Diao Hong-Wei, Dai Song-Tao, Xiang Xian-Bi, Chang Xiu-Lan, Xu Yan-Yue, Hu Zhi-Hua, Hao Hui-Ying, Kong Guang-Lin. Boron-doped silicon nanowires grown by plasmaenhanced chemical vapor deposition. Acta Physica Sinica,
2004, 53(12): 4410-4413.
doi: 10.7498/aps.53.4410
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Wang Miao, Li Zhen-Hua, Takegawa Hitosi, Saito Yahachi. Study on the definite direction growth of carbon nanotubes by the microwave plasma-enhanced chemical vapro phase deposition. Acta Physica Sinica,
2004, 53(3): 888-890.
doi: 10.7498/aps.53.888
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Yu Wei, Liu Li-Hui, Hou Hai-Hong, Ding Xue-Cheng, Han Li, Fu Guang-Sheng. Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition. Acta Physica Sinica,
2003, 52(3): 687-691.
doi: 10.7498/aps.52.687
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Yang Hui-Dong, Wu Chun-Ya, Zhao Ying, Xue Jun-Ming, Geng Xin-Hua, Xiong Shao-Zhen. Investigation on the oxygen contamination in the μc-Si∶H thin film deposited b y VHF-PECVD. Acta Physica Sinica,
2003, 52(11): 2865-2869.
doi: 10.7498/aps.52.2865
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YE CHAO, NING ZHAO-YUAN, CHENG SHAN-HUA, KANG JIAN. STUDY ON α-C∶F FILMS DEPOSITED BY ELECTRON CYCLOTRONRESONANCE PLASMA CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica,
2001, 50(4): 784-789.
doi: 10.7498/aps.50.784
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NING ZHAO-YUAN, CHENG SHAN-HUA, YE CHAO. CHEMICAL BONDING STRUCTURE OF FLUORINATED AMORPHOUS CARBON FILMS PREPARED BY ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica,
2001, 50(3): 566-571.
doi: 10.7498/aps.50.566
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