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Hydrogenated microcrystalline silicon germanium (μc-Si1-xGex:H) thin films have been prepared by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) using a mixture of SiH4 and GeH4 as the reactive gases. Effects of electrode separation on the structural properties of μc-Si1-xGex:H thin films have been investigated. Results show that reduction of the electrode separation can increase the Ge content in the films. Moreover, μc-Si1-xGex:H thin film deposited at a lower electrode separation of 7 mm possesses not only a stronger (220) orientation and a larger grain size, but also a lower microstructural factor. Then, the decomposition characteristics of the reactive gases are analyzed according to the variation of the structural properties of the μc-Si1-xGex:H thin films. It is found that the increase of the Ge content is due to the decrease of the SiH4 decomposition rate in the plasma. While the better film quality obtained at the lower electrode separation is attributed to the enhancement of the diffusibility of the Ge precursors caused by improving the proportion of GeH3 radicals
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Keywords:
- microcrystalline silicon germanium /
- electrode separation /
- residence time /
- radio frequency plasma enhanced chemical vapor deposition
[1] Shah A, Torres P, Tscharner R, Wyrsch N, Keppner H 1999 Science 285 692
[2] Kim S, Chung J W, Lee H, Park J, Heo Y, Lee H M 2013 Sol. Energy Mater. Sol. Cells 119 26
[3] Yan B J, Yue G Z, Sivec L, Yang J, Guha S, Jiang C S 2011 Appl. Phys. Lett. 99 113512
[4] Huang Z H, Zhang J J, Ni J, Cao Y, Hu Z Y, Li C, Geng X H, Zhao Y 2013 Chin. Phys. B 22 098803
[5] Ganguly G, Ikeda T, Nishimiya T, Saitoh K, Kondo M, Matsuda A 1996 Appl. Phys. Lett. 69 4224
[6] Cao Y, Zhang J J, Li C, Li T W, Huang Z H, Ni J, Hu Z Y, Geng X H, Zhao Y 2013 Sol. Energy Mater. Sol. Cells 114 161
[7] Cao Y, Zhang J J, Li T W, Huang Z H, Ma J, Yang X, Ni J, Geng X H, Zhao Y 2013 Journal of Semiconductors 34 034008
[8] Dun Y L, Zhang J J, Zhang L P, Zhang X, Cao Y, Hao Q Y, Geng X H, Zhao Y 2011 Journal of Optoelectronics Laser 22 382 (in Chinese)[敦亚琳, 张建军, 张丽平, 张鑫, 曹宇, 郝秋艳, 耿新华, 赵颖2011 光电子激光22 382]
[9] Cao Y, Zhang J J, Li T W, Huang Z H, Ma J, Ni J Geng X H, Zhao Y 2013 Acta Phy. Sin 62 036102 (in Chinese)[曹宇, 张建军, 李天微, 黄振华, 马峻, 倪牮, 耿新华, 赵颖2013 物理学报62 036102]
[10] Gu S B, Hu Z X, Zhang J J, Sun J, Yang R X 2007 Journal of Optoelectronics Laser 18 539 (in Chinese)[谷士斌, 胡增鑫, 张建军, 孙建, 杨瑞霞2007 光电子激光 18 539]
[11] Kim S, Park C, Lee J C, Cho J S, Kim Y 2013 Thin Solid Films 534 214
[12] Matsui T, Chang C W, Takada T, Isomura M, Fujiwara H, Kondo M 2009 Sol. Energy Mater. Sol. Cells 93 1100
[13] Isomura M, Nakahata K, Shima M Taira S, Wakisaka K, Tanaka M, Kiyama S 2002 Sol. Energy Mater. Sol. Cells 74 519
[14] Miyazaki S, Takahashi H, Yamashita H, Narasaki M, Hirose M 2002 J. Non-Cryst. Solids 299 148
[15] Cao Y, Zhang J J, Li T W, Huang Z H, Ma J, Yang X, Ni J, Geng X H, Zhao Y 2013 Journal of Optoelectronics Laser 24 924 (in Chinese)[曹宇, 张建军, 李天微, 黄振华, 马峻, 杨旭, 倪牮, 耿新华, 赵颖2013 光电子激光24 924]
[16] Zhong C J, Tanaka H, Sugawa S, Sugawa S, Ohmi T 2005 Thin Solid Films 493 54
[17] Scherrer P 1918 Gött. Nachr. 2 98
[18] Wagner H, Beyer W 1983 Solid State Commun. 48 585
[19] Guo Q C, Geng X H, Sun J, Wei C C, Han X Y, Zhang X D, Zhao Y 2007 Acta Phy. Sin 56 2790 (in Chinese)[郭群超, 耿新华, 孙建, 魏长春, 韩晓艳, 张晓丹, 赵颖2007 物理学报56 2790]
[20] Roschek T, Rech B, Mller J, Schmitz R, Wagner H 2004 Thin Solid Films 451 466
[21] Rajesh K, Brodie D E 1994 Thin Solid Films 249 254
[22] Doyle J R, Doughty D A, Gallagher A 1992 J. Appl. Phys. 71 4727
[23] Chowdhury A, Mukhopadhyay S, Ray S 2010 Sol. Energy Mater. Sol. Cells 94 1522
[24] Zhang J J, Cao Y, Li T W, Huang Z H, Ma J, Ni J, Zhao Y 2013 International Photonics and Optoelectronics Meetings Wuhan, China, May, 2013 ASa3A.32
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[1] Shah A, Torres P, Tscharner R, Wyrsch N, Keppner H 1999 Science 285 692
[2] Kim S, Chung J W, Lee H, Park J, Heo Y, Lee H M 2013 Sol. Energy Mater. Sol. Cells 119 26
[3] Yan B J, Yue G Z, Sivec L, Yang J, Guha S, Jiang C S 2011 Appl. Phys. Lett. 99 113512
[4] Huang Z H, Zhang J J, Ni J, Cao Y, Hu Z Y, Li C, Geng X H, Zhao Y 2013 Chin. Phys. B 22 098803
[5] Ganguly G, Ikeda T, Nishimiya T, Saitoh K, Kondo M, Matsuda A 1996 Appl. Phys. Lett. 69 4224
[6] Cao Y, Zhang J J, Li C, Li T W, Huang Z H, Ni J, Hu Z Y, Geng X H, Zhao Y 2013 Sol. Energy Mater. Sol. Cells 114 161
[7] Cao Y, Zhang J J, Li T W, Huang Z H, Ma J, Yang X, Ni J, Geng X H, Zhao Y 2013 Journal of Semiconductors 34 034008
[8] Dun Y L, Zhang J J, Zhang L P, Zhang X, Cao Y, Hao Q Y, Geng X H, Zhao Y 2011 Journal of Optoelectronics Laser 22 382 (in Chinese)[敦亚琳, 张建军, 张丽平, 张鑫, 曹宇, 郝秋艳, 耿新华, 赵颖2011 光电子激光22 382]
[9] Cao Y, Zhang J J, Li T W, Huang Z H, Ma J, Ni J Geng X H, Zhao Y 2013 Acta Phy. Sin 62 036102 (in Chinese)[曹宇, 张建军, 李天微, 黄振华, 马峻, 倪牮, 耿新华, 赵颖2013 物理学报62 036102]
[10] Gu S B, Hu Z X, Zhang J J, Sun J, Yang R X 2007 Journal of Optoelectronics Laser 18 539 (in Chinese)[谷士斌, 胡增鑫, 张建军, 孙建, 杨瑞霞2007 光电子激光 18 539]
[11] Kim S, Park C, Lee J C, Cho J S, Kim Y 2013 Thin Solid Films 534 214
[12] Matsui T, Chang C W, Takada T, Isomura M, Fujiwara H, Kondo M 2009 Sol. Energy Mater. Sol. Cells 93 1100
[13] Isomura M, Nakahata K, Shima M Taira S, Wakisaka K, Tanaka M, Kiyama S 2002 Sol. Energy Mater. Sol. Cells 74 519
[14] Miyazaki S, Takahashi H, Yamashita H, Narasaki M, Hirose M 2002 J. Non-Cryst. Solids 299 148
[15] Cao Y, Zhang J J, Li T W, Huang Z H, Ma J, Yang X, Ni J, Geng X H, Zhao Y 2013 Journal of Optoelectronics Laser 24 924 (in Chinese)[曹宇, 张建军, 李天微, 黄振华, 马峻, 杨旭, 倪牮, 耿新华, 赵颖2013 光电子激光24 924]
[16] Zhong C J, Tanaka H, Sugawa S, Sugawa S, Ohmi T 2005 Thin Solid Films 493 54
[17] Scherrer P 1918 Gött. Nachr. 2 98
[18] Wagner H, Beyer W 1983 Solid State Commun. 48 585
[19] Guo Q C, Geng X H, Sun J, Wei C C, Han X Y, Zhang X D, Zhao Y 2007 Acta Phy. Sin 56 2790 (in Chinese)[郭群超, 耿新华, 孙建, 魏长春, 韩晓艳, 张晓丹, 赵颖2007 物理学报56 2790]
[20] Roschek T, Rech B, Mller J, Schmitz R, Wagner H 2004 Thin Solid Films 451 466
[21] Rajesh K, Brodie D E 1994 Thin Solid Films 249 254
[22] Doyle J R, Doughty D A, Gallagher A 1992 J. Appl. Phys. 71 4727
[23] Chowdhury A, Mukhopadhyay S, Ray S 2010 Sol. Energy Mater. Sol. Cells 94 1522
[24] Zhang J J, Cao Y, Li T W, Huang Z H, Ma J, Ni J, Zhao Y 2013 International Photonics and Optoelectronics Meetings Wuhan, China, May, 2013 ASa3A.32
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