Steadystate charging characteristics of polymer irradiated by multi-energetic electrons

Liu Jing; Zhang Hai-Bo

doi:10.7498/aps.63.149401

Abstract

Charging characteristics of polymer irradiated by multi-energetic electrons is a basis to study and prevent electrostatic discharge in space radiation environment. The polymer irradiated by multi-energetic electrons is modeled and simulated. The space charge distribution, surface potential, space potential, surface potential and maximum field strength under the condition of sample parameters are obtained. The results show that because of electron drift and diffusion, electrons can transit through the electron scattering region, forming negative space charges. Some electrons can flow to the substrate of polymer. In the equilibrium state, the surface potential of the film negatively charged decreases with film thickness and trap density increasing, and it increases with electron mobility and relative permittivity increasing. The maximum field strength increases with film thickness and trap density increasing, and it decreases with electron mobility and relative permittivity increasing. The high-energy electrons section of multi-energetic electrons will shorten the equilibrium of charging process.

Keywords:

Authors and contacts

1.
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No.11175140).

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[31]	Joy D C 1995 Monte Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press) p27
[32]	Cornet N, Goeuriot D, Guerret-Piecourt C, Juve D, Treheux D, Touzin M, Fitting H J 2008 J. Appl. Phys. 103 064110
[33]	Touzin M, Goeuriot D, Guerret-Piecourt C, Juve D, Treheux D, Fitting H J 2006 J. Appl. Phys. 99 114110
[34]	Molinie P, Dessante P, Hanna R, Paulmier T, Dirassen B, Belhaj M, Payan D, Balcon N 2012 IEEE Trans. Dielectr. Electr. Insul. 19 1215
[35]	Feng G B, Cao M, Yan L P, Zhang H B 2013 Micron 52-53 62
[36]	Sessler G M, Figueiredo M T, Ferreira G F L 2004 IEEE Trans. Dielectr. Electr. Insul. 11 192
[37]	Sessler G M 1992 IEEE Trans. Electr. Insul. 27 961
[38]	Li W Q, Zhang H B 2010 Micron 41 416
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Cited By

[1]	Garrett H B, Whittlesey A C 2000 IEEE Trans. Plasma Sci. 28 2017
[2]	Li S T, Li G C, Min D M, Zhao N 2013 Acta Phys. Sin. 62 059401 (in Chinese) [李盛涛, 李国倡, 闵道敏, 赵妮 2013 物理学报 62 059401]
[3]	Balmain K G 1986 IEEE Trans. Electr. Insul. 21 427
[4]	Gao Z X, Li H W, Cai M H, Liu D Q, Huang J G, Han J W 2012 Acta Phys. Sin. 61 039601 (in Chinese) [高著秀, 李宏伟, 蔡明辉, 刘丹秋, 黄建国, 韩建伟 2012 物理学报 61 039601]
[5]	Cao H F, Liu S H, Sun Y W, Yuan Q Y 2013 Acta Phys. Sin. 62 119401 (in Chinese) [曹鹤飞, 刘尚合, 孙永卫, 原青云 2013 物理学报 62 119401]
[6]	Huang J G, Yi Z, Meng L F, Zhao H, Liu Y N 2013 Acta Phys. Sin. 62 099401 (in Chinese) [黄建国, 易忠, 孟立飞, 赵华, 刘业楠 2013 物理学报 62 099401]
[7]	Deforest S E 1972 J. Geophys. Res. 77 651
[8]	Koons H, Mazur J, Lopatin A, Pitchford D, Bogorad A, Herschitz R 2006 J. Spacecr. Rockets 43 178
[9]	Masui H, Toyoda K, Cho M 2008 IEEE Trans. Plasma Sci. 36 2387
[10]	Czeremuszkin G, Latreche M, Wertheimer M R 2001 Nucl. Instrum. Meth. B 185 88
[11]	Mateo-Velez J C, Inguimbert V, Roussel J F, Sarrail D, Levy L, Boulay F, Laffont E, Payan D 2008 IEEE Trans. Plasma Sci. 36 2395
[12]	Huang J G, Han J W 2010 Acta Phys. Sin. 59 2907 (in Chinese) [黄建国, 韩建伟 2010 物理学报 59 2907]
[13]	Quan R H, Zhang Z L, Han J W, Huang J G, Yan X J 2009 Acta Phys. Sin. 58 1205 (in Chinese) [全荣辉, 张振龙, 韩建伟, 黄建国, 闫小娟 2009 物理学报 58 1205]
[14]	Griseri V, Perrin C, Laurent C 2009 J. Electrost. 67 400
[15]	Donegan M M, Sample J L, Dennison J R, Hoffmann R 2010 J. Spacecr. Rockets 47 134
[16]	Miyake H, Tanaka Y, Takada T 2007 IEEE Trans. Dielectr. Electr. Insul. 14 520
[17]	Sarrailh P, Mateo-Velez J C, Roussel J F, Dirassen B, Forest J, Thiebault B, Rodgers D, Hilgers A 2012 IEEE Trans. Plasma Sci. 40 368
[18]	Takada T, Miyake H, Tanaka Y 2006 IEEE Trans. Plasma Sci. 34 2176
[19]	Paulmier T, Dirassen B, Payan D, Van Eesbeek M 2009 IEEE Trans. Dielectr. Electr. Insul. 16 682
[20]	Qin X G, He D Y, Wang J 2009 Acta Phys. Sin. 58 684 (in Chinese) [秦晓刚, 贺德衍, 王骥 2009 物理学报 58 684]
[21]	Quan R H, Han J W, Zhang Z L 2013 Acta Phys. Sin. 62 245205 (in Chinese) [全荣辉, 韩建伟, 张振龙 2013 物理学报 62 245205]
[22]	Li W Q, Zhang H B 2008 Acta Phys. Sin. 57 3219 (in Chinese) [李维勤, 张海波 2008 物理学报 57 3219]
[23]	Cao M, Wang F, Liu J, Zhang H B 2012 Chin. Phys. B 21 127901
[24]	Yang W J, Li Y D, Liu C L 2013 Acta Phys. Sin. 62 087901 (in Chinese) [杨文晋, 李永东, 刘纯亮 2013 物理学报 62 087901]
[25]	Renoud R, Mady F, Attard C, Bigarre J, Ganachaud J P 2004 Phys. Status Solidi A 201 2119
[26]	Dirassen B, Levy L, Reulet R, Payan D 2003 Proceedings of the 9th International Symposium on Materials in a Space Environment Noordwijk, Netherlands Jun. 16-20, 2003 p351
[27]	Yasuda M, Kainuma Y, Kawata H, Hirai Y, Tanaka Y, Watanabe R, Kotera M 2008 J. Appl. Phys. 104 124904
[28]	Perrin C, Griseri V, Inguimbert C, Laurent C 2008 J. Phys. D: Appl. Phys. 41 205417
[29]	Li W Q, Zhang H B 2010 Appl. Surf. Sci. 256 3482
[30]	Zhang H B, Feng R J, Ura K 2003 Chin. Phys. Lett. 20 2011
[31]	Joy D C 1995 Monte Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press) p27
[32]	Cornet N, Goeuriot D, Guerret-Piecourt C, Juve D, Treheux D, Touzin M, Fitting H J 2008 J. Appl. Phys. 103 064110
[33]	Touzin M, Goeuriot D, Guerret-Piecourt C, Juve D, Treheux D, Fitting H J 2006 J. Appl. Phys. 99 114110
[34]	Molinie P, Dessante P, Hanna R, Paulmier T, Dirassen B, Belhaj M, Payan D, Balcon N 2012 IEEE Trans. Dielectr. Electr. Insul. 19 1215
[35]	Feng G B, Cao M, Yan L P, Zhang H B 2013 Micron 52-53 62
[36]	Sessler G M, Figueiredo M T, Ferreira G F L 2004 IEEE Trans. Dielectr. Electr. Insul. 11 192
[37]	Sessler G M 1992 IEEE Trans. Electr. Insul. 27 961
[38]	Li W Q, Zhang H B 2010 Micron 41 416
[39]	Zheng F H, Zhang Y W, Xia J F, Xiao C, An Z L 2009 J. Appl. Phys. 106 064105

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Vol. 63, Issue 14 - 2014-07-20

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