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Memristor, memcapacitor and meminductor are novel nonlinear circuit elements with memory, which are also known as the memory elements. Based on the mathematical models of these three circuit elements, from the point of view of mathematical analysis, memristor, memcapacitor and meminductor Simulink based models are established. Simulink models of the memory elements reflect that their values are dependent on their historical states and their state variables, and correctly show their unique memory properties. A series of simulation analyses are done, and the typical characteristics of the three memory elements are obtained, showing the validities of these models. In addition, by studying the circuit characteristics under different parameters and excitations, the changing laws of these equivalent models with frequency and amplitude are obtained, which lay the foundation for research and application based on memristor, memcapacitor and meminductor's Simulink simulator.
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Keywords:
- memory elements /
- numerical simulation model /
- Simulink /
- memory property
[1] Chua L O 1971 IEEE Trans. Circuit Theory 18 507
[2] Chua L O 2008 Memristor and Memristive System Symposium Berkeley, USA, November 21, 2008
[3] Di Ventra M, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1717
[4] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[5] Faruque K A, Biswas B R, Rashid A B 2017 Circuits Syst. Signal Process. 36 1
[6] Ali M S, Saravanan S 2017 Chin. J. Phys. 55 1953
[7] Di Marco M, Forti M, Pancioni L 2017 IEEE Trans. Cybernetics 47 2970
[8] Wang X Y, Iu H H C, Wang G Y, Liu W 2016 Circuits Syst. Signal Process. 35 4129
[9] Njitacke Z T, Kengne J, Fotsin H B, Negou A N, Tchiotsop D 2016 Chaos Solitons Fractals 91 180
[10] Pershin Y V, Di Ventra M 2010 IEEE Trans. Circuits Syst. I 57 1857
[11] Biolek D, Biolek Z, Biolkova V 2011 Radioengineering 20 228
[12] Sah M P, Budhathoki R K, Yang C, Kim H 2014 J. Semiconductor Technol. Sci. 14 750
[13] Biolek D, Biolek Z, Biolkova V 2009 European Conference on Circuit Theory and Design Antalya, Turkey, August 23-27, 2009 p249
[14] Biolek D, Biolek Z, Biolkova V 2010 Electron. Lett. 46 520
[15] Biolek D, Biolek Z, Biolkova V 2011 Analog Integeated Circuit Signal Process. 66 129
[16] Wang X Y, Fitch A L, Iu H H C, Sreeram V, Qi W G 2012 Chin. Phys. B 21 108501
[17] Yu D S, Zhou Z, Iu H H C, Fernando T, Hu Y H 2017 IEEE Trans. Circuits Syst. Ⅱ 63 1101
[18] Sah M P, Budhathoki R K, Yang C, Kim H 2014 Circuits Systems Signal Process. 33 2363
[19] Wang X Y, Fitch A L, Iu H H C, Qi W G 2012 Phys. Lett. A 376 394
[20] Liang Y, Yu D S, Chen H 2013 Acta Phys. Sin. 62 158501 (in Chinese) [梁燕, 于东升, 陈昊 2013 物理学报 62 158501]
[21] Hu B L, Wang L D, Huang Y W, Hu X F, Zhang Y Y, Duan S K 2011 J. Southwest Univ. 33 50 (in Chinese) [胡柏林, 王丽丹, 黄艺文, 胡小方, 张宇阳, 段书凯 2011 西南大学学报 33 50]
[22] Song W P, Ding S C, Ning A P 2014 J. Taiyuan Univ. Sci. Technol. 35 23 (in Chinese) [宋卫平, 丁山传, 宁爱平 2014 太原科技大学学报 35 23]
[23] Duan F T, Cui B T 2015 Res. Prog. Solid State Electron. 3 231 (in Chinese) [段飞腾, 崔宝同 2015 固体电子学研究与进展 3 231]
[24] He P F, Wang L D, Duan S K, Li C D 2011 J. Univ. Electron. Sci. Technol. China 40 648 (in Chinese) [何朋飞, 王丽丹, 段书凯, 李传东2011 电子科技大学学报 40 648]
[25] Zhang J C, Li C D, Li C B 2012 Res. Prog. Solid State Electron. 32 239 (in Chinese) [张金铖, 李传东, 李超辈 2012 固体电子学研究与进展 32 239]
[26] Ventra M D, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1371
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[1] Chua L O 1971 IEEE Trans. Circuit Theory 18 507
[2] Chua L O 2008 Memristor and Memristive System Symposium Berkeley, USA, November 21, 2008
[3] Di Ventra M, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1717
[4] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[5] Faruque K A, Biswas B R, Rashid A B 2017 Circuits Syst. Signal Process. 36 1
[6] Ali M S, Saravanan S 2017 Chin. J. Phys. 55 1953
[7] Di Marco M, Forti M, Pancioni L 2017 IEEE Trans. Cybernetics 47 2970
[8] Wang X Y, Iu H H C, Wang G Y, Liu W 2016 Circuits Syst. Signal Process. 35 4129
[9] Njitacke Z T, Kengne J, Fotsin H B, Negou A N, Tchiotsop D 2016 Chaos Solitons Fractals 91 180
[10] Pershin Y V, Di Ventra M 2010 IEEE Trans. Circuits Syst. I 57 1857
[11] Biolek D, Biolek Z, Biolkova V 2011 Radioengineering 20 228
[12] Sah M P, Budhathoki R K, Yang C, Kim H 2014 J. Semiconductor Technol. Sci. 14 750
[13] Biolek D, Biolek Z, Biolkova V 2009 European Conference on Circuit Theory and Design Antalya, Turkey, August 23-27, 2009 p249
[14] Biolek D, Biolek Z, Biolkova V 2010 Electron. Lett. 46 520
[15] Biolek D, Biolek Z, Biolkova V 2011 Analog Integeated Circuit Signal Process. 66 129
[16] Wang X Y, Fitch A L, Iu H H C, Sreeram V, Qi W G 2012 Chin. Phys. B 21 108501
[17] Yu D S, Zhou Z, Iu H H C, Fernando T, Hu Y H 2017 IEEE Trans. Circuits Syst. Ⅱ 63 1101
[18] Sah M P, Budhathoki R K, Yang C, Kim H 2014 Circuits Systems Signal Process. 33 2363
[19] Wang X Y, Fitch A L, Iu H H C, Qi W G 2012 Phys. Lett. A 376 394
[20] Liang Y, Yu D S, Chen H 2013 Acta Phys. Sin. 62 158501 (in Chinese) [梁燕, 于东升, 陈昊 2013 物理学报 62 158501]
[21] Hu B L, Wang L D, Huang Y W, Hu X F, Zhang Y Y, Duan S K 2011 J. Southwest Univ. 33 50 (in Chinese) [胡柏林, 王丽丹, 黄艺文, 胡小方, 张宇阳, 段书凯 2011 西南大学学报 33 50]
[22] Song W P, Ding S C, Ning A P 2014 J. Taiyuan Univ. Sci. Technol. 35 23 (in Chinese) [宋卫平, 丁山传, 宁爱平 2014 太原科技大学学报 35 23]
[23] Duan F T, Cui B T 2015 Res. Prog. Solid State Electron. 3 231 (in Chinese) [段飞腾, 崔宝同 2015 固体电子学研究与进展 3 231]
[24] He P F, Wang L D, Duan S K, Li C D 2011 J. Univ. Electron. Sci. Technol. China 40 648 (in Chinese) [何朋飞, 王丽丹, 段书凯, 李传东2011 电子科技大学学报 40 648]
[25] Zhang J C, Li C D, Li C B 2012 Res. Prog. Solid State Electron. 32 239 (in Chinese) [张金铖, 李传东, 李超辈 2012 固体电子学研究与进展 32 239]
[26] Ventra M D, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1371
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