Research progress of high-quality monolayer MoS2 films

Wei Zheng; Wang Qin-Qin; Guo Yu-Tuo; Li Jia-Wei; Shi Dong-Xia; Zhang Guang-Yu

doi:10.7498/aps.67.20180732

Abstract

As an emerging two-dimensional (2D) material, monolayer molybdenum disulfide films show excellent electrical and optical properties and have aroused great interest due to their potential applications in electronics and optoelectronics. In this paper, we review our works about molybdenum disulfide films in the past few years. Chemical vapor deposition (CVD) is a convenient and low-cost method to synthesize 2D materials. By oxygen-assisted CVD, the wafer-scale highly-oriented monolayer molybdenum disulfide films and large single-crystal monolayer molybdenum disulfide on various substrates have been prepared epitaxially. Preparation of high-quality monolayer molybdenum disulfide films is the key to measure its intrinsic properties and realize its large-scale applications. Besides the preparation of high-quality materials, the optimizing of transfer technique and fabrication technique are of equal importance for improving the properties of electronic and optoelectronic devices. Water-assisted lossless transfer, patterned peeling, structural change and local phase transition of monolayer molybdenum disulfide films pave the way for preparing and optimizing the functionalized devices. For example, water-assisted transfer and patterned peeling provide methods of preparing molybdenum disulfide samples with clean surfaces and interfaces. Phase transition in the contact area of field-effect transistor reduces the contact resistance effectively, which improves the electrical performance. In addition, the heterojunctions of molybdenum disulfide and other 2D materials show novel electrical and optical properties. As for the functional devices, ultrashort-channel field-effect transistors, integrated flexible thin film transistors, and humidity sensor array have been realized with monolayer molybdenum disulfide films. A grain boundary widening technique is developed to fabricate graphene electrodes for ultrashort-channel monolayer molybdenum disulfide transistors. Field-effect transistors with channel lengths scaling down to 4 nm can be realized reliably and exhibit superior performances, such as the nearly Ohmic contacts and excellent immunity to short channel effects. Furthermore, monolayer molybdenum disulfide films show excellent electrical properties in the measurement of integrated flexible thin film transistors. Under a uniaxial stain of 1%, the performance of the device shows no obvious change, revealing not only the high quality of CVD-grown molybdenum disulfide films, but also the stabilities of these flexible thin film transistor devices. Molybdenum disulfide humidity sensor array for noncontact sensation also shows high sensitivity and stability. Mobility and on/off ratio of the devices in the array decrease linearly with the relative humidity increasing, leading to a high sensitivity of more than 104. The study of monolayer molybdenum disulfide films is universal and instructive for other 2D transition metal dichalcogenides.

Keywords:

PACS:

81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
68.55.-a	(Thin film structure and morphology)
73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
73.61.-r	(Electrical properties of specific thin films)

Authors and contacts

1.
CAS Key Laboratory of Nanoscale Physics and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3.
Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China;
4.
Collaborative Innovation Center of Quantum Matter, Beijing 100190, China

Corresponding author: Shi Dong-Xia, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn ; Zhang Guang-Yu, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51572289, 61734001), the National Key RD Program of China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDPB06).

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