Research progress of enhancing perovskite light emitting diodes with light extraction

Chen Jia-Mei; Su Hang; Li Wan; Zhang Li-Lai; Suo Xin-Lei; Qin Jing; Zhu Kun; Li Guo-Long

doi:10.7498/aps.69.20200755

Abstract

Perovskite light emitting diodes (PeLEDs) have developed rapidly in recent years due to their advantages of tenability of band gap and high color purity. At present, the external quantum efficiency of PeLED has rised up to 20%. Like the scenario of organic light emitting diode, there exist various internal losses in PeLED with low light extraction efficiency. It arises from the absorption of substrates, waveguide transmission and surface plasmon resonance of metal electrode. To improve the luminescence performance of PeLED, a well-matched optical admittance between the thin-films inside the devices is required. In this paper, the strategies of enhancing the light extraction efficiency are adopted as the materials and structures in PeLED are concerned. The applications of alternative electrode in PeLED are discussed, such as graphene, silver nanowires, metal transparent electrode and some new-types of electrodes. In addition, the plasma effect is also introduced into the PeLED to deflect the emitting light. What is more, the nano-structure grating is inserted into device to reduce the optical losses due to the large refractive index difference between the interfaces in device. Therefore, the external quantum efficiency of PeLED rises up to 28.2%, and the current efficiency can reach 88.7 cd/A.

Keywords:

Authors and contacts

Key Laboratory of Ningxia for Photovoltaic Materials, Ningxia University, Yinchuan 750021, China

Corresponding author: Li Guo-Long, liglo@163.com

Funds: Project supported by the National Natural Science Foundation of Ningxia, China (Grant No. 2019AAC03001)

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References

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Cited By

图 1 (a) PeLED器件中的光耦合损耗; (b)光在介质与空气界面的光学路径(垂直入射、折射、全反射)^[19,20]

Figure 1. (a) Various kinds of light out-coupling losses in LEDs; (b) optical path of light at the interface between medium and air (vertical incidence, refringence, total reflection)^[19,20].

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图 2 基于CsPbI₃纳米晶的PeLED的器件结构示意图, 基底分别为ITO和Ag, 其中红色箭头表明该端电极为透明且为出光面^[26]

Figure 2. Schematic diagram of the CsPbI₃ nanocrystal-based LED with ITO and Ag bottom cathodes. Red arrows indicate on which side the respective devices are transparent and emit light^[26].

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图 3 分别采用ITO和Au电极的PeLED　(a)能级结构排列图; (b)电压-电流效率图^[27]

Figure 3. PeLED with ITO and ultrathin Au electrode: (a) Energy band structure; (b) current efficiency-voltage curves^[27].

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图 4 PeLED电极为ZnO-Ag-ZnO结构:　(a) ZnO-Ag-ZnO结构示意图: 底部为ZnO, 中间为Ag层, 顶部为ZnO层; (b)电极分别为ITO和m-ZnO-Ag-ZnO的器件电压-电流效率图(插图显示了在5 V条件下器件的辐射性)^[28]

Figure 4. PeLED with ZnO-Ag-ZnO electrode: (a) ZnO-Ag-ZnO structure: bottom wetting ZnO layer, middle patterned Ag layer and top continuous ZnO layer; (b) current efficiency-voltage curves with ITO and ZnO-Ag-ZnO electrode (insets show the magnified view of emission uniformity on 5 V)^[28].

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图 5 阳极为AnoHIL的PeLED器件　(a)能级结构排列图; (b) PeLED 为不同电极的电压-外量子效率曲线^[29]

Figure 5. PeLEDs with AnoHIL anode: (a) Energy band diagram; (b) voltage-EQE curves of PeLEDs fabricated on various anodes^[29].

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图 6 掺杂Ag纳米棒的PeLED的透射电子显微镜截面图及器件结构示意图^[33]

Figure 6. Transmission electron microscope image of cross section and schematic diagram of device structure for PeLED with Ag nanorods^[33].

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图 7 FDTD模拟Au-Ag NP的电磁场分布^[35]

Figure 7. FDTD simulation of the electromagnetic field distributed around the Au-Ag NP^[35].

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图 8 基于MAPbI₃的PeLED　(a)光栅在PEDOT:PSS/ITO衬底上的实像; (b)电流密度-辐射特性曲线; (c)电压-外量子效率曲线^[36]

Figure 8. PeLED based on MAPbI₃: (a) Real image of grating on PEDOT:PSS/ITO substrate; (b) the curves of current density-radiance characteristics; (c) the curves of voltage-EQE^[36].

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图 9 PeLED带有纳米孔阵列、有机传输层的分子结构以及该结构的扫描电子显微镜^[37]

Figure 9. Device structure of PeLEDs with NHA, the molecular structure of organic transportin layers, and scanning electron microscope images of the structure^[37].

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图 10 带有AAM结构的PeLED　(a)器件结构示意图; (b) PeLED带有ND, NW结构的电场强度; (c) PeLED带有ND结构的电场强度^[38]

Figure 10. PeLED with AAM structure: (a) Device schematic; (b) electric field intensity of PeLED with ND, NW structure; (c) electric field intensity of PeLED with ND structure^[38].

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图 11 基于CsPbBr₃的PeLED压印纳米结构制备过程^[12]

Figure 11. Fabrication process of a CsPbBr₃ PeLED with the imprinted nanostructures^[12].

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图 12 钙钛矿发光层为亚微米结构的PeLED结构示意图, 光线A, B, C表示光线原先束缚于发射层中, 通过亚微米结构进行光提取^[11]

Figure 12. Device schematic with submicrometre structure. Rays A, B and C, which represent light trapped in devices with a continuous emitting layer, can be extracted by the submicrometre structure^[11].

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图 13 在厚度不同的钙钛矿发光层条件下外量子效率和电流密度的关系图, 钙钛矿发光层材料分别为(a) MAPbI₃, (b) Cs_0.2FA_0.8PbI_2.8Br_0.2, (c) FAPbI₃, (d) FAPbBr₃^[39]

Figure 13. EQE vs. current density of PLEDs based on (a) MAPbI₃, (b) Cs_0.2FA_0.8PbI_2.8Br_0.2, (c) FAPbI₃, (d) FAPbBr₃ thin films with various thicknesses^[39].

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表 1 PeLEDs光提取研究进展

Table 1. Research progress of PeLEDs light extraction.

发表时间	器件结构	光提取方法	CE_max/cd·A^–1	EQE_max/%	最大亮度/cd·m^–2	寿命参数T50	参考文献
2017	4LG/Buf-HIL/MAPbBr₃/TPBi/LiF/Al	电极	18.0	3.8	13000	—	[25]
2018	Ag/(ZnO/PEI)/CsPbI₃NC /TCTA/(MoO₃/Au/MoO₃)	电极	—	11.2	1106	—	[26]
2018	Au/HIL/MAPbBr₃/TPBi/LiF/AL	电极	3.3	—	11270	—	[27]
2019	m-ZAgZ/HAT-CN/TAPC/CsPbBr₃/TPBi/Liq/Al	电极	7.21	—	4846	—	[28]
2018	Glass/AnoHIL/MAPbBr₃/TPBi/Li/AL	电极	42	8.66	—	—	[29]
2020	Glass/Au/ZnO/MQW perovskite/ TFB/MoO₃/Au	电极微腔	—	20.2	—	—	[31]
2017	Glass/ITO/PEDOT:PSS/(Agrods NPB)/ CsPbBr₃ NC/TPBi/LiF/Al	激元	1.42	0.43	8911	—	[33]
2017	Au NPs/PVK:MAPbBr₃:TPBi/ TPBi/Cs₂CO₃/Al	激元	7.64	1.83	16050	—	[34]
2019	Glass/NHAs/ITO/Poly-TPD/MAPbI₃/TPBi/LiF/Al	微纳	—	0.012	0.53 W·sr ^–1·m^–2	—	[36]
2019	Glass/Epoxy/AAM(TiO₂)/ITO/PEDOT:PSS/ BA: CH₃ NH₃ PbBr₃/F₈/Ca/Ag	微纳	—	17.5	48668	120 s	[38]
2019	Glass/ITO/ZnO/PEDOT:PSS/ CsPbBr₃/TPBi/LiF/Al	微纳	88.7	28.2	～25000	—	[12]
2018	Glass/ITO/ZnO/ZnO-PEIE/ FAPbI₃/TFB/MoO_x/Au	薄膜形貌	—	20.7	390 W·sr ^–1· m^–2	20 h	[11]
2020	Glass/ITO/ PEDOT:PSS/Perovskite/ B₃PyMPM/LiF/Al	器件结构	—	17.6	79700	—	[39]

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Vol. 69, Issue 21 - 2020-11-05

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