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A broadband continuously tunable semiconductor disk laser is reported in this paper. The active region of gain chip is composed of InGaAs multiple quantum wells with resonant periodic gain structure, and its fluorescence peak wavelength is around 965 nm. Using the wideband characteristics of the quantum wells in gain chip, along with the simple linear cavity that is formed by a high reflectivity external mirror, the laser has a low cavity loss and a wide tuning range. The continuously tunable laser wavelength can be obtained by inserting birefringent filters with different thickness into the cavity. When the thickness of the birefringent filter is 2 mm, the wavelength tuning range of the laser is 45 nm, the maximum output power is 122 mW, and the beam quality M2 factors in the X- and the Y-directions are 1.00 and 1.02, respectively. The temperature characteristics of the surface-emitting spectra of gain chip and the narrowing effect of birefringent filter on laser linewidth h are also discussed.
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Keywords:
- semiconductor disk laser /
- continuous tuning /
- birefringent filter /
- narrow linewidth
[1] Lu B, Wei F, Zhang Z, Xu D, Pan Z Q, Chen D J, Cai H W 2015 Chin. Opt. Lett. 13 091402
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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[27] 王亚龙, 王庆, 李文静, 王雅兰 2018 光学技术 44 88
Wang Y L, Wang Q, Li W J, Wang Y L 2018 Opt. Tech. 44 88
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图 1 (a)增益芯片实物及(b)外延片结构示意图
Figure 1. (a) Photograph and (b) epitaxial structure of the gain chip
图 2 不同热沉温度下增益芯片的面发射PL谱
Figure 2. Surface-emitting PL spectra of the gain chip under different heatsink temperatures.
图 3 不同泵浦功率下增益芯片的面发射PL谱
Figure 3. Surface-emitting PL spectra of the gain chip with different pump power.
图 4 (a)宽带可调谐半导体薄片激光器结构示意图及(b)实物图
Figure 4. (a) Schematics and (b)photograph of the broadband tunable semiconductor disk laser.
图 5 自由运转下半导体薄片激光器的输出功率
Figure 5. Output powers of the free-running semiconductor disk laser.
图 6 最大输出功率为0.58 W时, 激光束的M2因子
Figure 6. M2 factor of the laser beam when the maximum output power is 0.58 W.
图 7 使用2 mm厚度BRF的SDL的波长调谐特性. 图中同时画出了对应波长的输出功率和不同m值下BRF的调谐曲线
Figure 7. Tuning characteristics of the SDL with 2 mm thickness BRF. The corresponding output powers at various wavelengths and the tuning curves of the BRF with different m values are also plotted.
图 8 用4 mm厚度BRF作调谐元件的SDL的调谐特性
Figure 8. Tuning characteristics of the SDL with 4 mm thickness BRF.
图 9 用6 mm厚度BRF作调谐元件的SDL的调谐特性
Figure 9. Tuning characteristics of the SDL with 6 mm thickness BRF.
图 10 自由运转及插入不同厚度BRF时SDL的光谱线宽
Figure 10. Laser spectra of the SDL under free-running and with different thickness BRF.
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[1] Lu B, Wei F, Zhang Z, Xu D, Pan Z Q, Chen D J, Cai H W 2015 Chin. Opt. Lett. 13 091402
Google Scholar
[2] Farrell T, McDonald D 2004 Proc. SPIE 5594 66
Google Scholar
[3] Rothe K W, Brinkmann U, Walther H 1974 Appl. Phys. 10 678
Google Scholar
[4] Soldatov A N, Reimer I V, Evtushenko V A, Melnikov K Yu, Malikov A V 2010 B. Lebedev Phys. Inst. 37 4
Google Scholar
[5] Bhatia P S, Keto J W 1996 Appl. Opt. 35 4152
Google Scholar
[6] Kuehne A J C, Gather M C 2016 Chem. Rev. 116 12823
Google Scholar
[7] Fan T Y, Byer R L 1988 IEEE J. Quantum Electron. 24 895
Google Scholar
[8] Byer R L 1988 Science 239 742
Google Scholar
[9] Huber G, Kränkel C, Petermann K 2010 JOSA B 27 B93
Google Scholar
[10] Coldren L A, Fish G A, Akulova Y, Barton J S, Colder C W 2004 J. Lightwave Technol. 22 193
Google Scholar
[11] 郝秀晴, 陈根祥 2010 光通信技术 34 4
Google Scholar
Hao X Q, Chen G X 2010 Opt. Commun. Technol. 34 4
Google Scholar
[12] Guina M, Rantamäki A, Härkönen A 2017 J. Phys. Appl. Phys. 50 383001
Google Scholar
[13] Rudin B, Rutz A, Hoffmann M, Maas D J H C, Bellancourt A R, Gini E, Südmeyer T, Keller U 2008 Opt. Lett. 33 2719
Google Scholar
[14] Heinen B, Wang T L, Sparenberg M, Weber A, Kunert B, Hader J, Koch S W, Moloney J V, Koch M, Stolz W 2012 Electron. Lett. 48 516
Google Scholar
[15] Hou G Y, Shu S L, Feng J, Popp A, Schmidt B, Lu H Y, Wang L J, Tian S C, Tong C Z, Wang L J 2019 IEEE Photonics J. 11 1
Google Scholar
[16] Fedorova K A, Guoyu H, Wichmann M, Kriso C, Zhang F, Stolz W, Schellrt M, Koch M, Rahimi-lman A 2020 Phys. Status Solidi-R 14 2000204
Google Scholar
[17] Li F, Mahmoud F, James T, Robert B, Yunshi K, Aramais Z, Jorg H, Jerome V, Wolfgang S, Stephan W 2006 Appl. Phys. Lett. 88 21105
Google Scholar
[18] Li F, Fallahi M, Zakharian A R, Hader J, Koch SW 2007 IEEE Photonic. Tech. L. 19 544
Google Scholar
[19] Borgentun C, Bengtsson J, Larsson A, Demaria F, Hein A, Unger P 2010 IEEE Photonic. Tech. L. 22 978
Google Scholar
[20] Butkus M, Rautiainen J, Okhotnikov O G, Hamilton C J, Malcolm G P A, Mikhrin S S, Krestnikov I L, Livshits D A, Rafailov E U 2011 IEEE J. Sel. Top. Quant. 17 1763
Google Scholar
[21] Yang Z, Albrecht R A, Cederberg J G, Sheik-Bahae M 2016 Appl. Phys. Lett. 109 1063
Google Scholar
[22] Artur B, Anna W J, Iwona S, Michal W, Marta W, Jan M 2017 IEEE PhotoN. Technol. Lett. 29 2215
Google Scholar
[23] Zhang P, Song Y R, Zhang X P, Dai T L, Liang Y P, Fan S Q 2011 Opt. Rev. 18 317
Google Scholar
[24] Mangold M, Wittwer V J, Sieber O D, Martin H, Igor L K, Daniil A L, Matthias G, Thomas S, Ursula K 2012 Opt. Express 20 4136
Google Scholar
[25] Fan L, Hader J, Schillgalies M, Fallahi M, Zakharian A R, Moloney J V, Bedford R, Murrary J T, Koch S W, Stolz W 2005 IEEE Photonic Tech. L. 17 1764
Google Scholar
[26] Sandusky J V, Brueck S R J 1996 IEEE Photonic Tech. L. 8 313
Google Scholar
[27] 王亚龙, 王庆, 李文静, 王雅兰 2018 光学技术 44 88
Wang Y L, Wang Q, Li W J, Wang Y L 2018 Opt. Tech. 44 88
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