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Under the condition of 5.6 GPa and 1250–1450 ℃, the diamond single crystals are synthesized in a cubic anvil high-pressure and high-temperature apparatus. High-purity FeNiCo solvents or NiMnCo solvents are chosen as the catalysts. High-purity (99.99%) graphite powders selected as a carbon source. High-quality abrasive grade diamond single crystals with relatively developed (100) or (111) crystal planes are used as crystal seeds. The effects of catalyst composition on crack defects in diamond single crystals are studied carefully. Firstly, using FeNiCo and NiMnCo catalysts respectively, we carry out the diamond single crystal growth experiments. It is found that under the same crystal growth condition, the probability of crystal crack defects in diamond single crystals grown with FeNiCo catalyst is significantly higher than that of crystals grown with NiMnCo catalyst. We believe that this is related to the high viscosity, poor fluidity of FeNiCo catalyst melt, and the large specific surface area of the crystal during growth, which leads to its high requirements for the stability of growth conditions. Secondly, the relationship between the growth time and the limit weight gain speed of the diamond single crystal synthesized, respectively, by FeNiCo catalyst and NiMnCo catalyst are investigated. The results are shown below. 1) The limiting growth rate of diamond single crystal increases with the growth time going by. 2) In the same growth time, the limit growth rate of diamond crystal grown with NiMnCo catalyst is higher than that of diamond crystal grown with NiMnCo catalyst. Thirdly, by scanning electron microscopy (SEM), we calibrate the surface morphology of the synthesized diamond single crystal. The test results show that the diamond single crystal has a high surface flatness. Even for the crystals with crack defects in the interior, the surface flatness is still good. However, Fourier transform infrared (FTIR) measurements show that the nitrogen impurity content of diamond crystal grown by FeNiCo catalyst with crack defect is about 3.66×10–4. The content of nitrogen impurity in the crystal grown by NiMnCo catalyst without crack defect is about 4.88×10–4. The results show that there is no direct correlation between nitrogen impurity content and crack defects in diamond crystal.
[1] Strong H M 1963 J. Phys. Chem. 39 2057
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Google Scholar
[4] Liu X B, Chen X, Singh D J, Stern R A, Wu J S, Petitgirard S, Bina C R, Jacobsen S D 2019 Proc. Natl. Acad. Sci. U.S.A. 116 7703
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Google Scholar
[9] 王春晓 2021 博士学位论文 (长春: 吉林大学)
Wang C X 2021 Ph. D. Dissertation (Changchun: Jilin University) (in Chinese)
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Xiao H Y, Qin Y K, Liu L N, Bao Z G, Tang C J, Sun R R, Zhang Y S, Li S S, Jia X P 2018 Acta Phys. Sin. 67 140702
Google Scholar
[21] Strong H M, Hanneman R E 1967 J. Chem. Phys. 46 3668
Google Scholar
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[23] Wentorf R H, Jr 1971 J. Phys. Chem. 76 18
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[25] Kiflawi I, Mayer A E, Spear P M, van Wyk J A, Woods G S 1994 Philos. Mag. B 9 1141
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图 1 金刚石大单晶的生长组装示意图
Figure 1. Sample assembly to treat synthesis diamond single crystals.
图 2 两种组分触媒生长金刚石大单晶的光学显微照片 (a), (b) FeNiCo 触媒; (c), (d) NiMnCo触媒
Figure 2. Optical micrographs of large diamond single crystals grown with two component catalysts: (a), (b) FeNiCo catalyst; (c), (d) NiMnCo catalyst.
图 3 两种触媒体系生长金刚石单晶极限增重速度与生长时间的关系曲线
Figure 3. The relationship between the limit growth rate and the growth time of diamond crystal grown with two kinds of catalyst systems.
图 4 两种触媒生长金刚石单晶的SEM测试结果 (a) 图2(a)所示晶体; (b) 图2(b)所示晶体; (c) 图2(c)所示晶体; (d) 图2(d)所示晶体
Figure 4. Scanning electron microscope photographs of diamond single crystals using different seed-crystals in diameters: (a) Diamond crystal of Fig. 2(a); (b) diamond crystal of Fig. 2(b); (c) diamond crystal of Fig. 2(c); (d) diamond crystal of Fig. 2(d).
图 5 金刚石大单晶的微区红外吸收谱测试
Figure 5. FTIR curve of diamond single crystals.
表 1 两种触媒生长金刚石单晶的对比实验
Table 1. Comparative experiment of diamond single crystal growth with two kinds of catalysts.
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[1] Strong H M 1963 J. Phys. Chem. 39 2057
Google Scholar
[2] Bovenkerk H P, Bundy F P, Hall H T, Strong H M, Wentorf Jr R H 1959 Nature 184 1094
Google Scholar
[3] Ma Y M, Eremets M, Oganov A R, Xie Y, Trojan, Medvedev S 2009 Nature 458 182
Google Scholar
[4] Liu X B, Chen X, Singh D J, Stern R A, Wu J S, Petitgirard S, Bina C R, Jacobsen S D 2019 Proc. Natl. Acad. Sci. U.S.A. 116 7703
Google Scholar
[5] Pal'yanov Y N, Borzdov Y, Kupriyanov I, Gusev V, Khokhryakov A, Sokol A 2001 Diamond Relat. Mater. 10 2145
Google Scholar
[6] Pal'yanov Y N, Kupriyanov I N, Borzdov Y M, Sokol A G, Khokhryakov A F 2009 Cryst. Growth Des. 9 2922
Google Scholar
[7] Borzdov Y, Pal'yanov Y, Kupriyanov I, Gusev V, Khokhryakov A, Sokol A, Efremov A 2002 Diamond Relat. Mater. 11 1863
Google Scholar
[8] Zhang Z F, Jia X P, Liu X B, Hu M H, Li Y, Yan B M, Ma H A 2012 Chin. Phys. B 21 038103
Google Scholar
[9] 王春晓 2021 博士学位论文 (长春: 吉林大学)
Wang C X 2021 Ph. D. Dissertation (Changchun: Jilin University) (in Chinese)
[10] Ralchenko V, Sedov V, Martyanov A, et al. 2022 Carbon 190 10
Google Scholar
[11] Meng X M, Tang W Z, Hei L F, Li C M, Askari S J, Chen G C, Lu F X 2008 Int. J. Refract. Met. Hard Mater. 26 485
Google Scholar
[12] Yao Y, Sang D D, Duan S S, Wang Q L, Liu C L 2021 Nanotechnology 32 332501
Google Scholar
[13] Sumiya H, Toda N, Satoh S 2002 J. Cryst. Growth 237-239 1281
[14] Kanekoa J, Yonezawa C, Kasugai Y, Sumiya H, Nishitani T 2000 Diamond Relat. Mater. 9 2019
Google Scholar
[15] Strelchuk V V, Nikolenko A S, Lytvyn P M, Ivakhnenko S O, Kovalenko T V, Danylenko I M, Malyuta S V 2021 Semicond. Phys. Quantum 24 261
[16] Soffner L T S, Dos Santos A A A, Trindade D W, Filgueira M, Azevedo M G 2020 J. Cryst. Growth 550 125888
Google Scholar
[17] Miao X Y, Ma H A, Zhang Z F, Chen L C, Zhou L J, Li M S, Jia X P 2021 Chin. Phys. B 30 068102
Google Scholar
[18] Li Y, Liao J H, Wang Y, She Y C, Xiao Z G, An J 2020 Opt. Mater. 101 109735
Google Scholar
[19] Li S S, Zhang H, Su T C, Hu Q, Hu M H, Gong C S, Ma H A, Jia X P, Li Y, Xiao H Y 2017 Chin. Phys. B 26 068102
Google Scholar
[20] 肖宏宇, 秦玉琨, 刘利娜, 鲍志刚, 唐春娟, 孙瑞瑞, 张永胜, 李尚升, 贾晓鹏 2018 物理学报 67 140702
Google Scholar
Xiao H Y, Qin Y K, Liu L N, Bao Z G, Tang C J, Sun R R, Zhang Y S, Li S S, Jia X P 2018 Acta Phys. Sin. 67 140702
Google Scholar
[21] Strong H M, Hanneman R E 1967 J. Chem. Phys. 46 3668
Google Scholar
[22] 肖宏宇, 秦玉琨, 李尚升, 马红安, 贾晓鹏 2011 金刚石与磨料磨具工程 31 25
Google Scholar
Xiao H Y, Qin Y K, Li S S, Ma H A, Jia X P 2011 Diamond Abrasives Eng. 31 25
Google Scholar
[23] Wentorf R H, Jr 1971 J. Phys. Chem. 76 18
[24] Liang Z Z, Jia X, Ma H A, Zang C Y, Zhu P W, Guan Q F, Kanda H 2005 Diamond Relat. Mater. 14 1932
Google Scholar
[25] Kiflawi I, Mayer A E, Spear P M, van Wyk J A, Woods G S 1994 Philos. Mag. B 9 1141
[26] Fang C, Shen W X, Zhang Y W, Mu P Y, Zhang Z F, Jia X P 2019 Cryst. Growth Des. 19 3955
Google Scholar
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