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Quantum spin liquid is an exotic state without magnetic order down to zero-temperature due to spin frustration, which is closely related to high temperature superconductivity. Therefore, an important issue arises whether the quantum spin liquid can be adjusted into a superconductor, even high-Tc superconductor, by using pressure or chemical doping. Rear-earth chalcogenides NaYbCh2 (Ch = O, S, Se), consisting of planar triangular lattice, exhibit no long-range magnetic order down to the lowest measured temperatures in specific heat, nuclear magnetic resonance, and neutron scattering, and are considered as a quantum spin liquid candidate. Here we investigate the electrical transport properties of NaYbCh2 (Ch = O, S, Se) under high pressures. For NaYbSe2, zero-resistance behavior is observed at 26.9 GPa, showing that the superconductivity comes into being. The superconducting transition temperature (Tc) is around 5.6 K at 26.9 GPa and robust against pressure till 45 GPa. The phase diagram of Tc versus pressure for NaYbSe2 is constructed. For NaYbS2, the room temperature resistance decreases from the order of 1011 Ω at 10 GPa to 10 Ω at 67 GPa. However, neither superconductivity nor insulator-metal transition is observed. Additionally, the NaYbO2 keeps insulating and the resistance is too large to be detected in a pressure range of 0–60 GPa.
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Keywords:
- quantum spin liquid /
- high pressure /
- electrical transport
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图 1 (a) NaYbSe2/NaYbS2的晶体结构图; (b) NaYbSe2单晶的XRD谱; (c) NaYbSe2粉末的XRD谱
Figure 1. (a) Crystal structure of NaYbSe2/NaYbS2; (b) XRD patten of NaYbSe2 single crystal; (c) XRD patten of NaYbSe2 powder.
图 2 (a) 不同压力下NaYbSe2电阻随温度的依赖关系, 其中17.9 GPa的R(T)曲线的值为
$R\times {1}/{4}$ ; (b) 26.9—45.4 GPa压力范围内, NaYbSe2在低温下的超导转变及其Tconset和TczeroFigure 2. (a) Temperature dependence of the resistance for NaYbSe2 under various pressures. The resistance values at 17.9 GPa are
$R\times {1}/{4}$ . (b) Superconducting transition of NaYbSe2 at low temperature between 26.9 and 45.4 GPa. The arrows indicate the Tconset and Tczero.
图 3 (a) 外加压力为26.9 GPa时NaYbSe2在不同磁场下的低温电阻随温度的依赖关系; (b) NaYbSe2上临界磁场随温度的依赖关系
Figure 3. (a) With the pressure of 26.9 GPa, the temperature dependence of the resistance for NaYbSe2 at low temperature under different magnetic fields; (b) temperature dependence of the upper critical field for NaYbSe2
图 4 NaYbSe2的压力-温度相图, 图中红色方点代表不同压力下NaYbSe2的Tc, 蓝色圆点代表不同压力下Se的Tc
Figure 4. Pressure-temperature phase diagram of NaYbSe2. The red square dots denote Tc of NaYbSe2 under different pressures. The blue circle dots denote Tc of Se under different pressures.
图 5 (a) 不同压力下NaYbS2样品电阻随温度的依赖关系; (b) 300 K时NaYbS2样品的电阻随压力的依赖关系
Figure 5. (a) Temperature dependence of the resistance for NaYbS2 under various pressure; (b) pressure dependence of the resistance for NaYbS2 at 300 K
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[1] Anderson P W 1973 Mater. Res. Bull. 8 153
Google Scholar
[2] Anderson P W 1987 Science 235 1196
Google Scholar
[3] Anderson P W, Baskaran G, Zou Z, Hsu T 1987 Phys. Rev. Lett. 58 2790
Google Scholar
[4] Savary L, Balents L 2017 Rep. Prog. Phys. 80 016502
Google Scholar
[5] Zhou Y, Kanoda K, Ng T K 2017 Rev. Mod. Phys. 89 025003
Google Scholar
[6] Balents L 2010 Nature 464 199
Google Scholar
[7] Li Y, Liao H Zhang Z, Li S, Jin F, Liang L, Zhang L, Zou Y, Pi L, Yang Z, Wang J, Wu Z, Zhang Q 2015 Sci. Rep. 5 16419
Google Scholar
[8] Shimizu Y, Miyagawa K, Kanoda K, Maesato M, Saito G 2003 Phys. Rev. Lett. 91 107001
Google Scholar
[9] Norman M R 2016 Rev. Mod. Phys. 88 041002
Google Scholar
[10] Banerjee A, Briges C A, Yan J Q, et al. 2016 Nat. Mater. 15 733
Google Scholar
[11] Zhong R, Gao T, Ong N P, Cava R J 2020 Sci. Adv. 6 eaay6953
Google Scholar
[12] 郭静, 孙力玲 2015 物理学报 64 217406
Google Scholar
Guo J, Sun L L 2015 Acta Phys. Sin. 64 217406
Google Scholar
[13] Qi Y, Sachdev S 2008 Phys. Rev. B 77 165112
Google Scholar
[14] Powell B J, McKenzie R H 2011 Rep. Prog. Phys. 74 056501
Google Scholar
[15] Kurosaki Y, Shimizu Y, Miyagawa K, Kanoda K, Saito G 2005 Phys. Rev. Lett. 95 177001
Google Scholar
[16] Shimizu Y, Hiramatsu T, Maesato M, Otsuka A, Yamochi H, Ono A, Itoh M, Yoshida M, Takigawa M, Yoshida Y, Saito G 2016 Phys. Rev. Lett. 117 107203
Google Scholar
[17] Jin C, Wang Y, Jin M, Jiang Z, Jiang D, Li J, Nakamoto Y, Shimizu K, Zhu J 2022 Phys. Rev. B 105 144402
Google Scholar
[18] Kozlenko D P, Kusmartseva A F, Lukin E V, Keen D A, Marshall W G, de Vries M A, Kamenev K V 2012 Phys. Rev. Lett. 108 187207
Google Scholar
[19] Kelly Z A, Gallagher M J, McQueen T M 2016 Phys. Rev. X 6 041007
Google Scholar
[20] Xi X, Bo X, Xu X S, Kong P P, Liu Z, Hong X G, Jin C Q, Cao G, Wan X, Carr G L 2018 Phys. Rev. B 98 125117
Google Scholar
[21] Layek S, Mehlawat K, Levy D, Greenberg E, Pasternak M P, Itié J P, Singh Y, Rozenberg G K 2020 Phys. Rev. B 102 085156
Google Scholar
[22] Wang Z, Guo J, Tafti F F, et al. 2018 Phys. Rev. B 97 245149
Google Scholar
[23] Liu W, Zhang Z, Ji J, Liu Y, Li J, Wang X, Lei H, Chen G, Zhang Q 2018 Chin. Phys. Lett. 35 117501
Google Scholar
[24] Baenitz M, Schlender Ph, Sichelschmidt J, Onykiienko Y A, Zangeneh Z, Ranjith K M, Sarkar R, Hozoi L, Walker H C, Orain J C, Yasuoka H, van den Brink J, Klauss H H, Inosov D S, Doert Th 2018 Phys. Rev. B 98 220409
Google Scholar
[25] Dai P L, Zhang G, Xie Y, Duan C, Gao Y, Zhu Z, Feng E, Tao Z, Huang C L, Cao H, Podlesnyak A, Granroth G E, Everett M S, Neuefeind J C, Voneshen D, Wang S, Tan G, Morosan E, Wang X, Lin H Q, Shu L, Chen G, Guo Y, Lu X, Dai P 2021 Phys. Rev. X 11 021044
Google Scholar
[26] Zhang Z, Ma X, Li J, Wang G, Adroja D T, Perring T P, Liu W, Jin F, Ji J, Wang Y, Kamiya Y, Wang X, Ma J, Zhang Q 2021 Phys. Rev. B 103 035144
Google Scholar
[27] Bordelon M, Liu C, Posthuma L, Sarte P M, Butch N P, Pajerowski D M, Banerjee A, Balents L, Wilson S D 2020 Phys. Rev. B 101 224427
Google Scholar
[28] Bordelon M M, Kenney E, Liu C, Hogan T, Posthuma L, Kavand M, Lyu Y, Sherwin M, Butch N P, Brown C, Graf M J, Balents L, Wilson S D 2019 Nat. Phys. 15 1058
Google Scholar
[29] Jia Y T, Gong C S, Liu Y X, Zhao J F, Dong C, Dai G Y, Li X D, Lei H C, Yu R Z, Zhang G M, Jin C Q 2020 Chin. Phys. Lett. 37 097404
Google Scholar
[30] Zhang Z, Yin Y, Ma X, Liu W, Li J, Jin F, Ji J, Wang Y, Wang X, Yu X, Zhang Q 2020 arXiv: 2003.11479v1
[31] Schleid T, Lissner F 1993 Eur. J. Sol. State Inorg. Chem. 30 829
[32] Gray A K, Martin B R, Dorhout P K 2003 Z. Kristallor.-New Cryst. Struct. 218 19
[33] Akahama Y, Kobayashi M, Kawamura H 1992 Solid State Commun. 84 803
Google Scholar
[34] Yang P T, Liu Z Y, Chen K Y, Liu X L, Zhang X, Yu Z H, Zhang H, Sun J P, Uwatoko Y, Dong X L, Jiang K, Hu J P, Guo Y F, Wang B S, Cheng J G 2022 Nat. Commun. 13 2975
Google Scholar
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