Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors

Li Yang-Fan; Guo Hong-Xia; Zhang Hong; Bai Ru-Xue; Zhang Feng-Qi; Ma Wu-Ying; Zhong Xiang-Li; Li Ji-Fang; Lu Xiao-Jie

doi:10.7498/aps.73.20231440

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Li Yang-Fan, Guo Hong-Xia, Zhang Hong, Bai Ru-Xue, Zhang Feng-Qi, Ma Wu-Ying, Zhong Xiang-Li, Li Ji-Fang, Lu Xiao-Jie. Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2024, 73(2): 026103. DOI: 10.7498/aps.73.20231440

Citation:

Li Yang-Fan, Guo Hong-Xia, Zhang Hong, Bai Ru-Xue, Zhang Feng-Qi, Ma Wu-Ying, Zhong Xiang-Li, Li Ji-Fang, Lu Xiao-Jie. Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2024, 73(2): 026103. DOI: 10.7498/aps.73.20231440

Citation:

Li Yang-Fan, Guo Hong-Xia, Zhang Hong, Bai Ru-Xue, Zhang Feng-Qi, Ma Wu-Ying, Zhong Xiang-Li, Li Ji-Fang, Lu Xiao-Jie. Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistorsJ. Acta Physica Sinica, 2024, 73(2): 026103. DOI: 10.7498/aps.73.20231440