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物理学报. 2006, 55(1): 437-440.
doi: 10.7498/aps.55.437.
退火温度对低温生长MgxZn1－xO薄膜光学性质的影响
- 收稿日期: 2004-12-16
- 修回日期: 2004-12-16
- 刊出日期: 2006-01-20
摘要: 用射频磁控溅射法在80℃衬底温度下制备出MgxZn1-xO(x=0.16)薄膜，用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对MgxZn1-xO薄膜结构和光学性质的影响.测量结果显示，MgxZn1-xO薄膜为单相六角纤锌矿结构，并且具有沿c轴的择优取向；随着退火温度的升高，(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大，(002)XRD峰半高宽(F
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关键词:
- MgxZn1-xO薄膜 /
- 射频磁控溅射 /
- 退火
English Abstract
Effect of annealing on optical properties of MgxZn1－xO thin films deposited at low temperature
- Received Date:
16 December 2004
- Accepted Date:
16 December 2004
- Published Online:
20 January 2006
Abstract: MgxZn1-xO films(x=0.16) have been prepared at 80℃ by radio frequency magnetron sputtering. The effect of the annealing temperature on the structure and optical properties of the films are studied using XRD, photoluminescence and the transmittance spectra. The results indicate that the thin films have hexagonal wurtzite single phase structure and a prefered orientation with the c axis perpendicular to the substrate. With increasing annealing temperature the intensities of the XRD (002) peaks increase, the grain size and intensity of the UV photoluminescence peaks also increase, while the FWHM of (002) peaks decreases, which demonstrates that high quality MgxZn1-xO films deposited by RF magnetron sputtering can be obtained by properly controlling the annealing temperature.
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Keywords:
- MgxZn1-xO films /
- RF magnetron sputtering /
- annealing
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