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By using the classical molecular dynamics and the simulated annealing techniques, the evolutions of the rippled morphology in single atomic graphenes placed on the Si (100), Si (111) and Si (211) surfaces respectively are performed at an atomic level. Our results show that the monolayer graphene sheets on the different Si surfaces form atomic scale rippled structures. A graphene monolayer prepared on Si surface forms rippled structure due to the relative lattice mismatch between graphene and Si substrate. The rippled morphology of graphene sheet on Si surface is strongly dependent on the annealing temperature. Such ripples will directly affect the adhesion strength between graphene and Si substrate. These findings are useful for understanding the structural morphology and stability of graphene on the semiconductor Si substrate, which will provide an analysis reference for further applications of graphene.
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Keywords:
- graphene /
- ripples /
- molecular dynamic simulation
[1] Obradovic B, Kotlyar R, Heinz F, Matagne P, Rakshit T, Giles M D, Stettler M A, Nikonov D E 2006 Appl. Phys. Lett. 88 142102
[2] Nakada K, Fujita M, Dresselhaus G, Mildred S D 1996 Phys. Rev. B 54 17954
[3] Han M Y, Ozyilmaz B, Zhang Y B, Kim P 2007 Phys. Rev. Lett. 98 206805
[4] Berger C, Song Z, Li X, Wu X, Brown N, Naud C, Mayou D, Li T, Hass J, Marchenkov A N, Conrad E H, First P N, de Heer W 2006 Science 312 1191
[5] Ohta T, Bostwick A, Seyller T, Horn K, Rotenberg E 2006 Science 313 951
[6] Ohta T, Bostwick A, McChesney J L, Seyller T, Horn K, Rotenberg E 2007 Phys. Rev. Lett. 98 206802
[7] Parga A L V, Calleja F, Borca B, Jr P M C G, Hinarejos J J, Guinea F, Miranda R 2008 Phys. Rev. Lett. 100 056807
[8] Johann C, Alpha T. N‘D, Carsten B, Thomas M 2008 Nano Lett. 8 565
[9] Sampsa K. H, Mark P. B, Peter H. J, Ingmar S, Katariina P, Wolfgang M, Jouko L, Peter L, Jani S 2013 Phys. Rev. B 88 201406
[10] Li XS, Cai WW, An JH, Kim S, Nah J, Yang DX, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee SK, Colombo L, Ruoff RS 2009 Science 3241312
[11] Reina A, Jia XT, Ho J, Nezich D, Son H, Bulovic V, Dresselhaus MS, Kong J 2009 Nano Lett. 9 30
[12] A. van Kan J, Bettiol A A, Watt F 2006 Nano Lett. 6 579
[13] Remeika M, Bezryadin A 2005 Nanotechnology. 16 1172
[14] Ouerghi A, Kahouli A, Lucot D, Portail M, Travers L, Gierak J, Penuelas, Jegou P, Shukla A, Chassagne T, Zielinski M 2010 Appl. Phys. Lett. 96 191910
[15] Suemitsu M, Fukidome H 2010 J. Phys. D: Appl. Phys. 43 374012
[16] Kang C Y, Tang J, Li L M, Yan W S, Xu P S, Wei S Q 2012 Acta Phys. Sin. 61 037302 (in Chinese) [康朝阳, 唐军, 李利民, 闫文盛, 徐彭寿, 韦世强 2012 物理学报 61 037302]
[17] Chao T, Li J M, Li Z S, Kai W Z, Jian X Z 2008 J. Appl. Phys. 104 113536
[18] Chao T, Xiao L W, Xin T, Xiang Y P, Li Z S, Jian X Z 2012 Chin. Phys. B 61 066803
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[1] Obradovic B, Kotlyar R, Heinz F, Matagne P, Rakshit T, Giles M D, Stettler M A, Nikonov D E 2006 Appl. Phys. Lett. 88 142102
[2] Nakada K, Fujita M, Dresselhaus G, Mildred S D 1996 Phys. Rev. B 54 17954
[3] Han M Y, Ozyilmaz B, Zhang Y B, Kim P 2007 Phys. Rev. Lett. 98 206805
[4] Berger C, Song Z, Li X, Wu X, Brown N, Naud C, Mayou D, Li T, Hass J, Marchenkov A N, Conrad E H, First P N, de Heer W 2006 Science 312 1191
[5] Ohta T, Bostwick A, Seyller T, Horn K, Rotenberg E 2006 Science 313 951
[6] Ohta T, Bostwick A, McChesney J L, Seyller T, Horn K, Rotenberg E 2007 Phys. Rev. Lett. 98 206802
[7] Parga A L V, Calleja F, Borca B, Jr P M C G, Hinarejos J J, Guinea F, Miranda R 2008 Phys. Rev. Lett. 100 056807
[8] Johann C, Alpha T. N‘D, Carsten B, Thomas M 2008 Nano Lett. 8 565
[9] Sampsa K. H, Mark P. B, Peter H. J, Ingmar S, Katariina P, Wolfgang M, Jouko L, Peter L, Jani S 2013 Phys. Rev. B 88 201406
[10] Li XS, Cai WW, An JH, Kim S, Nah J, Yang DX, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee SK, Colombo L, Ruoff RS 2009 Science 3241312
[11] Reina A, Jia XT, Ho J, Nezich D, Son H, Bulovic V, Dresselhaus MS, Kong J 2009 Nano Lett. 9 30
[12] A. van Kan J, Bettiol A A, Watt F 2006 Nano Lett. 6 579
[13] Remeika M, Bezryadin A 2005 Nanotechnology. 16 1172
[14] Ouerghi A, Kahouli A, Lucot D, Portail M, Travers L, Gierak J, Penuelas, Jegou P, Shukla A, Chassagne T, Zielinski M 2010 Appl. Phys. Lett. 96 191910
[15] Suemitsu M, Fukidome H 2010 J. Phys. D: Appl. Phys. 43 374012
[16] Kang C Y, Tang J, Li L M, Yan W S, Xu P S, Wei S Q 2012 Acta Phys. Sin. 61 037302 (in Chinese) [康朝阳, 唐军, 李利民, 闫文盛, 徐彭寿, 韦世强 2012 物理学报 61 037302]
[17] Chao T, Li J M, Li Z S, Kai W Z, Jian X Z 2008 J. Appl. Phys. 104 113536
[18] Chao T, Xiao L W, Xin T, Xiang Y P, Li Z S, Jian X Z 2012 Chin. Phys. B 61 066803
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