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通过磁控溅射单一四元靶材磁控得到的黄铜矿Cu(In,Ga) Se2（CIGS）太阳电池开发的主要瓶颈是严重的载流子复合，其开路电压非常低。具体的，CIGS与钼（Mo）之间不良的缺陷环境是吸收体和界面复合严重的主要原因之一。其中，在背界面处引入的CuGaSe2（CGS）低温缓冲层可以有效地抑制吸收体与背电极在高温磁控过程中的不利界面反应，从而获得高质量的晶体。通过这种背界面工程，不仅可以很好地解决吸收体和界面质量不佳的问题，而且有利于在吸收层中形成梯度带隙结构，从而使深能级InGa缺陷转换为较低能级的VCu缺陷，最终CIGS太阳电池的转换效率达到15.04%。这项工作为直接溅射高效率CIGS太阳电池的产业化提供了一种新的方法。Thin-film solar cells offer an opportunity to reduce the cost of solar-to-power conversion, replacing expensive and thick silicon wafers, which themselves account for more than 50% of the total cost of PV modules. However, many thin-film solar cell materials result in low PV performance due to enhanced recombination through defect states. Cu(In,Ga) Se2 (CIGS) is a promising thin-film solar cell material due to its direct tunable bandgap, high absorption coefficient, low effective electron and hole mass, and abundant constituent elements. Among them, magnetron sputtering or selenization technology has been widely used to catch up with the development of large-area preparation of CIGS thin-film solar cells because of its uniform film composition and simple process. However, the use of toxic gases such as H2Se and H2S and the difficulty in forming gradient bandgaps limit their development. In this paper, the "V" Ga gradient classification of the absorbing layer of CIGS solar cells was achieved by sputtering CuGaSe2 (CGS) thin layers of different thicknesses in the room temperature layer by sputtering and selenium-free methods of quaternary target sputtering. Firstly, the microstructure of the film was characterized by SEM, XRD, Raman and XPS, and when the CGS layer was located in the middle of the low-temperature layer, the grain size of the film was the largest, the crystallinity was the best, and the "V-shaped" structure of CGI was formed at the back of the absorbing layer. Subsequently, IV and EQE tests showed that the optimized cell efficiency was as high as 15.04%, and the light response intensity was enhanced in the 300 nm-1200 nm band. Finally, the AS test shows that the defect energy level of the solar cell changes from InGa defect to VCu defect of lower energy level, and the defect density decreases from 7.04×1015 cm-3 to 5.51×1015 cm-3. This is comparable to the recording efficiency of the current single-target magnetron sputtering CIGS solar cells, showing a good application prospect.
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Keywords:
- CIGS solar cells /
- Magnetron sputtering /
- V-band gap /
- Defect characteristics
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