硅基光电子器件的辐射效应研究进展

周悦; 胡志远; 毕大炜; 武爱民

doi:10.7498/aps.68.20190543

摘要

硅基光电子器件与芯片技术是通信领域的下一代关键技术, 在光通信、高性能计算、数据中心等领域有广阔的市场, 在生物传感领域也有广泛应用. 根据硅光器件高集成度、重量小等特性, 可以预见硅基光电子芯片在空间通信、核电站、高能粒子实验等辐射环境中也极具应用前景. 本文综述了硅基光电子器件在高能粒子环境下的辐射效应研究工作, 阐述了电离和非电离辐射效应; 针对无源器件和有源器件分别介绍了辐射效应和响应机理, 包括波导、环形谐振器、调制器、探测器、激光器、光纤等. 高能辐射对无源器件的影响主要包括结构加速氧化、晶格缺陷、非晶结构致密化等. 对于光电探测器和激光器, 辐射引起的位移损伤占主导地位, 其中点缺陷引入的深能级会影响载流子响应导致器件性能变化, 而电光调制器在辐射环境下的主要损伤机制是电离损伤, 产生的缺陷电荷会影响载流子浓度从而改变有效折射率. 本文最后展望了硅基光电集成器件的辐射加固思路和在空间环境中的应用前景.

关键词:

Abstract

Silicon photonics is a fundamental technology, which has great potential applications in optical interconnection for telecom, datacom, and high performance computers, as well as in bio-photonics. Currently considered are the photonics integrated circuits that are able to work in harsh environments such as high energy equipment and future space systems including satellites, space stations and spacecraft. The understanding of the radiation effects of the photonics devices is critical for fabricating radiation hardened photonic integrate chips and maintaining the performance of the devices and the systems. In this paper, the recent progress of the radiation effects of silicon photonic components is summarized. The effects of the high energy particles that possibly degrade the performance of the device are explained, and the response of the passive and active device under radiation are reviewed comprehensively, including waveguides, ring resonators, modulators, detectors, lasers and optical fibers and so on. For passive devices, radiation-induced effects include accelerated-oxidation of the structures, radiation-generated lattice defects, and amorphous densification or compaction in the optical materials. The effective refractive index of the passive device may change consequently, leading the working frequency to shift, the optical confinement to decrease, and the optical power to leak, which accounts for the extra loss or other performance degradation behaviors. For photodetectors and lasers, radiation-induced displacement damage will be dominant. The induced point defects localized in the silicon layer bring about deep level in the forbidden band, acting as generation-recombination centers or trap centers of tunneling effect, which will compensate for either donor or acceptor levels, degrading the response of these optoelectronic device significantly. The plasma dispersion effect is the mainstream approach to building the silicon electro-optic modulators, which will suffer ionization damage in the high energy particle environment, because the interface-trapped hole caused by ionizing radiation reduces the carrier concentration in the depletion region and even induces the pinch-off of the p-doped side of the modulator, which may result in device failure. To improve the radiation hardness of the silicon photonic device, the passivation of the surface, optimization of the waveguide shape, and the choice of appropriate thickness of the buried oxide layer are possible solutions, and more effective approaches are still to be developed.

Keywords:

作者及机构信息

1.
中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海　200050

2.
中国科学院大学, 材料与光电研究中心, 北京　100049

通信作者: 武爱民, wuaimin@mail.sim.ac.cn

基金项目: 国家科技重大专项02专项 (批准号: 2017ZX02315004-002-003) 和科技部重点研发计划 (批准号: 2016YFE0130000)资助的课题

Authors and contacts

1.
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Wu Ai-Min, wuaimin@mail.sim.ac.cn

Funds: Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Frant No. 2017ZX02315004-002-003) and the Major Research and Development Project of the Ministry of Science and Technology of China (Grant No. 2016YFE0130000)

文章全文

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施引文献

图 1 光子能量和原子序数与三种效应的关系

Fig. 1. Relationships between photon energy, atomic number and three effects.

下载: 全尺寸图片幻灯片

图 2 硅光系统的信息传输过程

Fig. 2. Information transmission process of silicon optical system.

下载: 全尺寸图片幻灯片

图 3 微环谐振器的结构示意图

Fig. 3. Schematic diagram of micro ring resonator.

下载: 全尺寸图片幻灯片

图 4 有效折射率与γ射线的累积剂量的关系　(a) a-Si谐振器; (b) SiN_x谐振器^[25]

Fig. 4. Dependences of effective index changes on cumulative gamma radiation dose in (a) a-Si reso nators and (b) SiN_x devices, inferred from optical resonator measurements^[25].

下载: 全尺寸图片幻灯片

图 5 MZM的示意图^[47]

Fig. 5. Schematic diagram of MZM^[47].

下载: 全尺寸图片幻灯片

[1]	王兴军, 苏昭棠, 周治平 2015 中国科学: 物理学力学天文学 45 15 Wang X J, Su Z T, Zhou Z P 2015 Sci. China: Phys. Mech. Astron. 45 15
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[3]	Dai L H, Bi D W, Hu Z Y, Liu X N, Zhang M Y, Zhang Z X, Zou S C 2018 Chin. Phys. B 27 048503 Google Scholar
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[16]	Berghmans F, Brichard B, Fernandez A F, Gusarov A, Uffelen M V, Girard S 2008 An Introduction to Radiation Effects on Optical Components and Fiber Optic Sensors (Dordrecht: Springer Netherlands) pp127–165
[17]	沈自才, 丁义刚 2015 抗辐射设计与辐射效应 (北京: 中国科学技术出版社) 第85页 Shen Z C, Ding Y G 2015 Radiation Protection Design and Radiation Effect (Beijing: China Science And Technology Press) p85 (in Chinese)
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[22]	曹彤彤, 张利斌, 费永浩, 曹严梅, 雷勋, 陈少武 2013 物理学报 62 194210 Google Scholar Cao T T, Zhang L B, Fei Y H, Cao Y M, Lei X, Chen S W 2013 Acta Phys. Sin. 62 194210 Google Scholar
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[24]	Bhandaru S, Hu S, Fleetwood M D, Weiss M S 2015 IEEE Trans. Nucl. Sci. 62 323 Google Scholar
[25]	Du Q Y, Huang Y Z, Ogbuu O, Zhang W, Li J Y, Singh V, Agarwal M A, Hu J J 2017 Opt. Lett. 42 587 Google Scholar
[26]	Ahmed Z, Cumberland T L, Klimov N N, Pazos M I, Tosh E R, Fitzgerald R 2018 Sci. Rep. 8 13007 Google Scholar
[27]	Brasch V, Chen Q F, Schiller S, et al. 2014 Opt. Express 25 30786
[28]	Grillanda S, Singh V, Raghunathan V, Morichetti F, Melloni A, Kimerling L, Agarwal M A 2016 Opt. Lett. 41 3053 Google Scholar
[29]	Morichetti F, Grillanda S, Manandhar S, Shutthanandan V, Kimerling L, Melloni A, Agarwal M A 2016 ACS Photonics 3 1569 Google Scholar
[30]	吴金东, 黄舒, 胡海鑫, 丁纲筋, 肖湘杰 2014 汉斯 4 34 Wu J D, Huang S, Hu H X, Ding G J, Xiao X J 2014 Hans 4 34
[31]	Ryckman D J, Reed A R, Weller A R, Fleetwood M D, Weiss M S 2010 J. Appl. Phys. 108 113528 Google Scholar
[32]	Piao F, Oldham G W, Haller E E 2000 J. Non-Cryst. Solids 276 61 Google Scholar
[33]	Leick L, Zenth K, Laurent L C, Koster T, Andersen UA L, Wang L, Larsen H B, Nielsen P L, Mattsson E K 2004 Optical Fiber Communication Conference Los Angeles, USA, February 23–27, 2004 p40
[34]	Worhoff K, Lambeck P V, Driessen A 1999 J. Lightwave Technol. 17 1401 Google Scholar
[35]	沈浩, 李东升, 杨德仁 2015 物理学报 64 204208 Google Scholar Shen H, Li D S, Yang D R 2015 Acta Phys. Sin. 64 204208 Google Scholar
[36]	王智琪 2014 博士学位论文 (上海: 中国科学院大学上海微系统与信息技术研究所) Wang Z Q 2014 Ph. D. Dissertation (Shanghai: Shanghai Institute of Microsystem and Information Technology, University of Chinese Academy of Sciences) (in Chinese)
[37]	仇超 2013 博士学位论文 (上海: 中国科学院大学上海微系统与信息技术研究所) Qiu C 2013 Ph. D. Dissertation (Shanghai: Shanghai Institute of Microsystem and Information Technology, University of Chinese Academy of Sciences) (in Chinese)
[38]	Nikolić, D, Vasic A, Fetahovic I, Stanković K, Osmokrović P 2011 Ser. A: Appl. Math. Inform. Mech. 3 27
[39]	Kumar M V, Kumar S, Cheng C, Asokan K, Kumar A, Shobha V, Karanth P S, Krishnaveni S 2017 ECS J. Solid State Sci. Technol. 6 Q132 Google Scholar
[40]	Zeiler M, Seif El Nasr-Storey S, Detraz S, Kraxner A, Olantera L, Scarcella C, Sigaud C, Soos C, Troska J, Vasey F 2017 IEEE Trans. Nucl. Sci. 64 2794 Google Scholar
[41]	Hoffman G B, Gehl B, Martinez N J, Trotter D C, Starbuck A L, Pomerene A, Dallo C M, Hood D, Dodd P E, Swanson S E, Long C M, DeRose C T, Lentine A L 2019 IEEE Trans. Nucl. Sci. 66 801 Google Scholar
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