溶胶-凝胶法制备氧化锡基薄膜及薄膜晶体管的研究进展

刘贤哲; 张旭; 陶洪; 黄健朗; 黄江夏; 陈艺涛; 袁炜健; 姚日晖; 宁洪龙; 彭俊彪

doi:10.7498/aps.69.20200653

摘要

透明导电氧化物 (transparent conductive oxides, TCOs)薄膜和透明氧化物半导体 (transparent oxide semiconductors, TOSs) 薄膜具有高透明度和良好的导电率等特点, 广泛应用于太阳能电池、平板显示、智能窗以及透明柔性电子器件等领域. 大多数TCOs和TSOs薄膜主要是以氧化铟、氧化锌和氧化锡三种材料为基础衍生来的, 其中, 氧化铟薄膜中In元素有毒、含量稀少且价格昂贵, 会造成环境污染; 氧化锌薄膜对酸或碱刻蚀液敏感, 薄膜图形化困难; 氧化锡薄膜不仅无毒、无污染、价格低廉, 还具有良好的电学性能和化学稳定性, 具有巨大的发展潜力. 目前, 薄膜的制备主要依赖于真空镀膜技术. 此类技术的缺点在于设备结构复杂且价格昂贵、能耗高、工艺复杂、生产成本高等. 相比传统真空镀膜技术, 溶胶-凝胶法具有工艺简单、成本低等优点, 受到了人们的广泛关注. 本文从TCOs和TSOs薄膜的发展现状和发展趋势出发, 先介绍了氧化锡薄膜的结构特性、导电机制、元素掺杂理论以及载流子散射机理, 然后介绍了溶胶-凝胶法原理和制备方法, 接着介绍了近些年来溶胶-凝胶法制备氧化锡基薄膜在n型透明导电薄膜、薄膜晶体管以及p型半导体薄膜中的应用和发展, 最后总结了当前存在的问题以及今后研究的方向.

关键词:

Abstract

Transparent conductive oxide (TCO) films and transparent oxide semiconductor (TOS) films have been widely adopted in solar cells, flat panel displays, smart windows, and transparent flexible electronic devices due to their advantages of high transparency and good conductivity and so on. Most of TCO and TOS films are mainly derived from indium oxide, zinc oxide and tin oxide. Among these materials, the In element is toxic, rare and expensive for indium oxide film, which will cause environmental pollution; zinc oxide film is sensitive to acid or alkali etchants, resulting in a poor formation of film patterning; tin oxide film is not only non-toxic, eco-friendly, and cheap but also has good electrical properties and strong chemical stability. Thus, tin oxide has a great potential for developing the TCO and TOS films. At present, the film is prepared mainly by the vacuum deposition technique. The drawbacks of this technique are complex and expensive equipment system, high energy consumption, complicated process and high-cost production. However, compared with the vacuum deposition technique, the sol-gel method has attracted extensive attention because of its virtues such as simple process and low cost. In this paper, we review the development status and trend of TCO and TOS films. First, the structural characteristics, conductive mechanism, element doping theory and carrier scattering mechanism of tin oxide thin films are introduced. Then the principle of sol-gel method and correlative film fabrication techniques are illustrated. Subsequently, the application and development of tin oxide-based thin films prepared by sol-gel method in n-type transparent conductive films, thin-film transistors and p-type semiconductor films in recent years are described. Finally, current problems and future research directions are also pointed out.

Keywords:

作者及机构信息

1.
华南理工大学发光材料与器件国家重点实验室, 高分子光电材料与器件研究所, 广州　510641

2.
广州新视界光电科技有限公司, 广州　510530

通信作者: 陶洪, tao.h@scut.edu.cn ; 宁洪龙, ninghl@scut.edu.cn ;

基金项目: 广东省基础与应用基础研究重大项目(批准号: 2019B030302007)、国家自然科学基金(批准号: 51771074, 61574061)、国家自然科学基金重大集成项目(批准号: U1601651)、广州市科技计划项目(批准号: 201904010344)、中央高校基本科研业务费专项资金(批准号: 2019MS012)、2019年广东大学生科技创新培育“攀登计划”专项资金 (批准号: pdjh2019a0028, pdjh2019b0041)、国家级大学生创新创业训练计划(批准号: 201910561005, 201910561007)和华南理工大学百步梯攀登计划研究项目(批准号: j2tw201902475, j2tw201902203)资助的课题.

Authors and contacts

1.
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510641, China

2.
New Vision Opto-Electronic Technology Co., Ltd, Guangzhou 510530, China

Corresponding author: Tao Hong, tao.h@scut.edu.cn ; Ning Hong-Long, ninghl@scut.edu.cn ;

Funds: Project supported by the Major project of Basic and Applied Basic Research in Guangdong Province, China(Grant No. 2019B030302007), the National Natural Science Foundation of China (Grant Nos. 51771074, 61574061), Major Integration Project of the National Natural Science Foundation of China (Grant No.U1601651), Guangzhou Science and Technology Project, China (Grant No. 201904010344), Special Funds for Basic Scientific Research Operating Expenses of Central Universities, China (Grant No. 2019MS012), Special Fund for "Climbing Plan" of Science and Technology Innovation Cultivation for Guangdong University Students in 2019 (Grant Nos. pdjh2019a0028, pdjh2019b0041), National Innovation and Entrepreneurship Training Program for College Students (Grant Nos. 201910561005, 201910561007), and the South China University of Technology BaiBu Ladder Climbing Program Research Project (Grant Nos. j2tw201902475, j2tw201902203).

文章全文 : translate this paragraph

参考文献

[1]	Grundmann M, Frenzel H, Lajn A, Lorenz M, Schein F, von Wenckstern H 2010 Phys. Status Solidi Appl. Mater. Sci. 207 1437 Google Scholar
[2]	Yu X, Marks T J, Facchetti A 2016 Nat. Mater. 15 383 Google Scholar
[3]	Park J, Kim H, Kim I 2014 J. Electroceram. 32 117 Google Scholar
[4]	Hosono H 2007 Thin Solid Films 515 6000 Google Scholar
[5]	Park J S, Maeng W J, Kim H S, Park J S 2012 Thin Solid Films 520 1679 Google Scholar
[6]	Facchetti A, Marks T J 2010 Transparent Electron. From Synth. to Appl. 561 2002
[7]	Fortunato E, Barquinha P, Martins R 2012 Adv. Mater. 24 2945 Google Scholar
[8]	Chopra K L, Major S, Pandya D K 1983 Thin Solid Films. 102 1 Google Scholar
[9]	Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488 Google Scholar
[10]	Yang T, Qin X, Wang H H, Jia Q, Yu R, Wang B, Wang J, Ibrahim K, Jiang X, He Q 2010 Thin Solid Films 518 5542 Google Scholar
[11]	Fang F, Zhang Y, Wu X, ShaO Q, Xie Z 2015 Mater. Res. Bull. 68 240 Google Scholar
[12]	Ning H L, Liu X Z, Zhang H K, Fang Z Q, Cai W, Chen J Q, Yao R H, Xu M, Wang L, Lan L F, Peng J B, Wang X F, Zhang Z C 2017 Materials (Basel) 10 24 Google Scholar
[13]	Jadhav H, Suryawanshi S, More M A, Sinha S 2017 Appl. Surf. Sci. 419 764 Google Scholar
[14]	El-Gendy Y A 2017 Phys. B Condens. Matter 526 59 Google Scholar
[15]	Bae J Y, Park J, Kim H Y, Kim H S, Park J S 2015 ACS Appl. Mater. Interfaces 7 12074 Google Scholar
[16]	Jiménez V M, Espinós J P, González-Elipe A R, Caballero A, Yubero F 1999 J. Phys. IV 9 749 Google Scholar
[17]	Choi Y J, Gong S C, Johnson D C, Golledge S, Yeom G Y, Park H H 2013 Appl. Surf. Sci. 269 92 Google Scholar
[18]	Park J W, Kang B H, Kim H J 2020 Adv. Funct. Mater. 30 1904632 Google Scholar
[19]	Ning H L, Liu X Z, Ruan H G, Peng C, Huang F X, Deng Y X, Yuan W J, Yao R H, Qiu B, Wang X F, Peng J B 2019 AIP Adv. 9 11 Google Scholar
[20]	Salmani E, Laghrissi A, Lamouri R, Rouchdi M, Dehmani M, Ez-Zahraouy H, Hassanain N, Mzerd A, Benyoussef A 2018 Opt. Quantum Electron. 50 85 Google Scholar
[21]	Pons D, Bourgoin J C 1985 J. Phys. C Solid State Phys. 18 3839 Google Scholar
[22]	Shukla T S 2012 J. Sens. Technol. 2 102 Google Scholar
[23]	Scanlon D O, Watson G W 2012 J. Mater. Chem. 22 25236 Google Scholar
[24]	Terrier C, Chatelon J P, Berjoan R, Roger J A 1995 Thin Solid Films 263 37 Google Scholar
[25]	Mäki-Jaskari M A, Rantala T T 2002 Phys. Rev. B - Condens. Matter Mater. Phys. 65 1 Google Scholar
[26]	Kılıç Ç, Zunger A 2002 Phys. Rev. Lett. 88 955011 Google Scholar
[27]	Singh A K, Janotti A, Scheffler M, van De Walle C G 2008 Phys. Rev. Lett. 101 1 Google Scholar
[28]	倪佳苗, 赵修建, 郑小林, 赵江 2009 真空科学与技术学报 29 531 Google Scholar NI J M, Zhao X J, Zheng X L, Zhao J 2009 Zhenkong Kexue Yu Jishu Xuebao 29 531 Google Scholar
[29]	望咏林, 颜悦, 沈玫, 贺会权, 张官理 2006 材料导报 20 317 Google Scholar Wang Y L, Yan Y, Shen M, He H Q, Zhang G L 2006 Mater. Rev. 20 317 Google Scholar
[30]	刘宏燕, 颜悦, 望咏林, 伍建华, 张官理, 厉蕾 2015 航空材料学报 35 63 Liu H Y, Yan Y, Wang Y L, Wu J H, Zhang G L, Li L J. Aeronaut. Mater. 35 63 (in Chinese)
[31]	王立坤, 郁建元, 王丽, 牛孝友, 付晨, 邱茹蒙, 晏伟静, 赵洪力 2018 硅酸盐学报 46 590 Wang L K, Yu J Y, Wang L, Niu X Y, Fu C, Qiu Y M, Yan W J, Zhao H L 2018 J. Chin. Ceram. Soc. 46 590
[32]	Noguchi S, Sakata H 1980 J. Phys. D. Appl. Phys. 13 1129 Google Scholar
[33]	Galceran Mestres M, Pujol Baiges M C, Aguiló Díaz M 2010 Ph. D. Dissertation (Tarragona: Universitat Rovira i Virgili.)
[34]	武志刚, 高建峰 2010 精细化工 027 21 Wu Z G, Gao J F 2010 Fine Chem. 027 21
[35]	Park B, Na S Y, Bae I G 2019 Sci. Rep. 9 1 Google Scholar
[36]	Filipovic L, Selberherr S, Mutinati G C, Brunet E, Steinhauer S, Köck A, Teva J, Kraft J, Siegert J, Schrank F 2013 Proc. world. Cong. Eng. 2 987
[37]	Aymerich M, Gómez-Varela A I, Álvarez E, Flores-Arias M T 2016 Materials (Basel. 9 728 Google Scholar
[38]	Lau G K, Shrestha M 2017 Micromachines 8 1 Google Scholar
[39]	Krebs F C 2009 Sol. Energy Mater. Sol. Cells. 93 394 Google Scholar
[40]	李宁, 卢迪芬 2004 玻璃与搪瓷 6 12 Google Scholar Li N, Lu D F 2004 Glass&Enamel 6 12 Google Scholar
[41]	Korotcenkov G, Brinzari V, Schwank J, DiBattista M, Vasiliev A 2001 Sensors Actuators, B Chem. 77 244 Google Scholar
[42]	Falcony C, Aguilar-Frutis M A, García-Hipólito M 2018 Micromachines 9 1 Google Scholar
[43]	Landau L, Levich B 1988 Dyn. Curved Front. 17 141
[44]	Vilà A, Gomez A, Portilla L, Morante J R 2014 Thin Solid Films 553 118 Google Scholar
[45]	Betz U, Kharrazi Olsson M, Marthy J, Escolá M F, Atamny F 2006 Surf. Coatings Technol. 200 5751 Google Scholar
[46]	Lee S M, Lee J M, Kwon S J, Cho E S 2013 Mol. Cryst. Liq. Cryst. 586 138 Google Scholar
[47]	May C, Tomita Y, Toerker M, Eritt M, Loeffler F, Amelung J, Leo K 2008 Thin Solid Films 516 4609 Google Scholar
[48]	Park S K, Han J I, Kim W K, Kwak M G 2001 Thin Solid Films 397 49 Google Scholar
[49]	Agashe C, Major S S 1996 J. Phys. D. Appl. Phys. 29 2988 Google Scholar
[50]	Luo Y R 2007 Comprehensive Handbook of Chemical Bond Energies(Boca Raton: CRC Press) p1
[51]	Karthick P, Vijayanarayanan D, Sridharan M, Ananth A K, Sanjeeviraja C, Jeyadheepan K 2017 Thin Solid Films 631 1 Google Scholar
[52]	Tran Q P, Fang J S, Chin T S 2015 Mater. Sci. Semicond. Process. 40 664 Google Scholar
[53]	Lee K M, Shih K L, Chiang C H, Suryanarayanan V, Wu C G 2014 Thin Solid Films 570 7 Google Scholar
[54]	Upadhyay J P, Vishwakarma S R, Prasad H C 1988 Thin Solid Films 167 7 Google Scholar
[55]	An H R, Kim C, Oh S T, Ahn H J 2014 Ceram. Int. 40 385 Google Scholar
[56]	Elangovan E, Shivashankar S A, Ramamurthi K 2005 J. Cryst. Growth 276 215 Google Scholar
[57]	Turgut G 2015 Thin Solid Films 594 56 Google Scholar
[58]	Turgut G, Keskenler E F, Aydin S, Sönmez E, Doǧan S, Düzgün B, Ertuǧrul M 2013 Superlattices Microstruct. 56 107 Google Scholar
[59]	Turgut G 2015 Philos. Mag. 95 1607 Google Scholar
[60]	Huang Y, Li D, Feng J, Li G, Zhang Q 2010 J. Sol-Gel Sci. Technol. 54 276 Google Scholar
[61]	Gokulakrishnan V, Parthiban S, Jeganathan K, Ramamurthi K 2011 J. Mater. Sci. 46 5553 Google Scholar
[62]	Marius G, Heiko F, Alexander L, Michael L, Friedrich S, H. von W 2010 Phys. Status Solidi A 1449 1437
[63]	Jang B, Kim T, Lee S, Lee W Y, Kang H, Cho C S, Jang J 2018 IEEE Electron Device Lett. 39 1179 Google Scholar
[64]	Avis C, Ki Y G, Jang J, 2019 Materials (Basel) 12 3341 Google Scholar
[65]	Liu C, Wang Z 2018 AM-FPD 2018 - 25 th International Workshop on Active-Matrix Flatpanel Displays Devices Kyoto, Japan July 3−6, 2018 p
[66]	Lee W, Jang B, Lee S, Kim T, Jang J 2018 25 th Int. Work. Act. Flatpanel Displays Devices 1
[67]	Jang J, Kitsomboonloha R, Swisher S L, Park E S, Kang H, Subramanian V 2013 Adv. Mater. 25 1042 Google Scholar
[68]	Huang G, Duan L, Dong G, Zhang D, Qiu Y 2014 ACS Appl. Mater. Interfaces 6 20786 Google Scholar
[69]	Zhao Y, Dong G, Duan L, Qiao J, Zhang D, Wang L, Qiu Y 2012 RSC Adv. 2 5307 Google Scholar
[70]	Kim S J, Yoon S, Kim H J 2014 Japanese journal of applied physics 2 1 Google Scholar
[71]	Liu A, Zhu H, Sun H, Xu Y, Noh Y Y 2018 Adv. Mater. 30 1 Google Scholar
[72]	Wang Z, Nayak P K, Caraveo-Frescas J A, Alshareef H N 2016 Adv. Mater. 28 3831 Google Scholar
[73]	Hiroshi K, Hiroshi Yanagi K U 2000 MRS Bull. 25 28 Google Scholar
[74]	Bagheri-Mohagheghi M M, Shokooh-Saremi M 2004 J. Phys. D. Appl. Phys. 37 1248 Google Scholar
[75]	Tsay C Y, Liang S C 2015 J. Alloys Compd. 622 644 Google Scholar
[76]	Ji Z, He Z, Song Y, Liu K, Ye Z Z 2003 J. Cryst. Growth 259 282 Google Scholar
[77]	Mao Q N, Ji Z G, Zhao L N 2010 Phys. Status Solidi B 247 299 Google Scholar
[78]	Soitah T N, Yang C, Sun L 2010 Mater. Sci. Semicond. Process. 13 125 Google Scholar
[79]	Li X, Deng R, Li Y, Yao B, Ding Z, Qin J, Liang Q 2016 Ceram. Int. 42 5299 Google Scholar
[80]	Ghodsi F E, Mazloom J 2012 Appl. Phys. A Mater. Sci. Process. 108 693 Google Scholar
[81]	Mazloom J, Ghodsi F E 2013 Mater. Res. Bull. 48 1468 Google Scholar
[82]	Ye Q, Zhang X, Guo D, Xu W, Ning H, Qiu T, Li J, Hou D, Yao R, Peng J 2020 Coatings 10 399 Google Scholar

施引文献

图 1 氧化锡　(a) 晶体结构; (b) XRD图谱^[22]; (c) 能带结构^[23]; (d) 能带结构示意图^[7]

Fig. 1. SnO₂: (a) Crystalline structure; (b) XRD pattern^[22]; (c) band structure^[23]; (d) band structure schematic^[7].

下载: 全尺寸图片幻灯片

图 2 氧化锡内部不同本征点缺陷的形成能^[26]

Fig. 2. Formation energy of intrinsic point defects in SnO₂^[26].

下载: 全尺寸图片幻灯片

图 3 不同半导体的能带图　(a)本征半导体; (b) n型掺杂半导体; (c) p型掺杂半导体

Fig. 3. The energy band schematic of semiconductors: (a) intrinsic (b) n type; (c) p type.

下载: 全尺寸图片幻灯片

图 4 晶界散射和电离杂质散射机制示意图^[31]

Fig. 4. The schematic of grain boundary scattering and ionized impurity scattering mechanism^[31].

下载: 全尺寸图片幻灯片

图 5 溶胶-凝胶技术原理^[33]

Fig. 5. The overview of the sol-gel technologies^[33].

下载: 全尺寸图片幻灯片

图 6 (a) 旋涂法^[35]; (b) 喷雾热解法^[36]; (c) 浸涂法^[37]; (d) 喷墨打印法^[38]

Fig. 6. The solution-processed fabrication techniques of thin film: (a) Spin coating^[35]; (b) spray pyrolysis^[36]; (c) dip coating^[37]; (d) inkjet print^[38].

下载: 全尺寸图片幻灯片

图 7 在不同SnF₂浓度下　(a) FTO薄膜 (110) 晶面衍射的半峰宽和晶粒尺寸的变化和 (b) FTO薄膜的电阻率、载流子浓度和迁移率的变化^[52]

Fig. 7. (a) Variation of full-width-at-half-maximum and grain size estimated along (1 1 0) diffraction and (b) electrical resistivity, carrier concentration and Hall mobility of the FTO films as a function of SnF₂ concentration, 0–10 mol%^[52].

下载: 全尺寸图片幻灯片

图 8 不同Sb掺杂浓度下　(a) 方阻和电阻率的变化和 (b) 迁移率和载流子浓度的变化^[56]

Fig. 8. The variation of (a) Sheet resistance and resistivity and (b) Hall mobility and carrier concentration for ATO film with different Sb concentrations^[56].

下载: 全尺寸图片幻灯片

图 9 在不同掺杂浓度下SnO₂基TCOs薄膜的电学性能变化　(a) Ta^[57]; (b) Nb^[58]; (c) Pr^[59]; (d) W^[60]

Fig. 9. The variation of electrical properties for SnO₂-based TCOs films with different dopants concentrations: (a) Ta^[57]; (b) Nb^[58]; (c) Pr^[59]; (d) W^[60].

下载: 全尺寸图片幻灯片

图 10 (a) 不同浓度SnO₂薄膜的厚度和电学性能^[63]; (b) SnO₂薄膜的XRD图谱和TFT的转移特性曲线^[64]; (c) Ga掺杂SnO₂的TFT示意图及其转移特性曲线^[65]

Fig. 10. (a) The thickness and electrical properties of SnO₂ films with different concentration^[63]; (b) the XRD pattern of SnO₂ film and the transfer characteristic curve of SnO₂ TFT^[64]; (c) the schematic cross-sectional diagram of Ga doped SnO₂ TFT and corresponding transfer characteristic curve^[65].

下载: 全尺寸图片幻灯片

图 11 (a) 不同锡前驱体溶液的热重分析曲线^[69]; (b) 不同原子的标准电极电位、带隙和电负性^[70]; (c) 不同氧化物介电材料的高介电常数和能带值^[71]; (d) 在标准条件下, 高介电常数的氧化物吸湿反应的吉布斯能量变化^[71]

Fig. 11. (a) Thermogravimetric analyses curves of various Sn precursors^[69]; (b) standard electrode potential, bandgap, and electronegativity of In, Zn, Sn, and carrier suppressible atoms^[70]; (c) permittivity and band gap for different oxide dielectrics^[71]; (d) Gibbs energy changes for moisture absorption reactions in high permittivity oxides under standard conditions^[71].

下载: 全尺寸图片幻灯片

图 12 不同掺杂浓度SnO₂基薄膜的透过率图谱　(a) Ga掺杂SnO₂^[75]; (b) Co掺杂SnO₂^[81]; (c) Mn掺杂SnO₂^[80]; (d) 不同掺杂浓度下Mg掺杂SnO₂薄膜的光学吸收图谱^[79]

Fig. 12. The transmittance spectra of SnO₂-based films with different dopant concentration: (a) Ga doped SnO₂^[75]; (b) Co doped SnO₂^[81]; (c) Mn doped SnO₂^[80]; (d) the optical absorption spectra of Mg-doped SnO₂ thin films with different concentration^[79].

下载: 全尺寸图片幻灯片

图 13 p-n结的电流-电压特性曲线　(a) SnO₂:Ga/ZnO:Al^[75]; (b) SnO₂:Ga/SnO₂:Si^[82]

Fig. 13. The current–voltage characteristics curve of p-n heterojunction: (a) SnO₂:Ga/ZnO:Al^[75]; SnO₂:Ga/SnO₂:Si^[82].

下载: 全尺寸图片幻灯片

表 1 不同卤素元素的电负性、X—H和X—Sn键解离能和原子半径^[31,50]

Table 1. The electronegativity, BDE of X—H and X— Sn, atomic radius for halogen elements^[31,50].

Element	Electroneg- ativity	BDE of X-H/kJ·mol^–1	Atomic radius/nm	BDE of X-Sn/kJ·mol^–1
F	4.0	569.68	0.42	476
Cl	3.0	431.36	0.79	350
Br	2.8	366.16	1.2	337
BDE: Bond dissociation energy

下载: 导出CSV

表 2 不同元素掺杂SnO₂薄膜的电学参数和透过率

Table 2. The electrical parameters and transmittance of SnO₂ thin films with different dopants.

Doping elements	Conductivity/Ω^–1·cm^–1	Carrier density /cm^–3	Hall Mobility /cm²·V^–1·s^–1	Transmittance/%	Technique	Ref.
F	0.33 × 10³	2.62 × 10²⁰	7.96	86	spray pyrolysis	[51]
F	1.43 × 10³	1.10 × 10²¹	8.1	90	dip-coating	[52]
Li, F	2.70 × 10³	5.62 × 10²⁰	29.1	70	spray pyrolysis	[53]
P, F	4.0 × 10⁵	8.30 × 10²⁶	0.0032	86	spray pyrolysis	[54]
Sb	0.36 × 10³	6.37 × 10²¹	0.347	61	spin-coating	[55]
Sb	3.50 × 10³	1.68 × 10²¹	12.03	—	spray pyrolysis	[56]
Ta	0.50 × 10³	1.30 × 10²⁰	29.26	80	spray pyrolysis	[57]
Pr	0.26 × 10³	8.70 × 10¹⁹	18.75	80	spray pyrolysis	[59]
W	0.17 × 10³	7.60 × 10¹⁹	14.2	90	dip-coating	[60]
Nb	0.23 × 10³	5.00 × 10¹⁹	25	70	spray pyrolysis	[61]

下载: 导出CSV

表 3 溶液法制备SnO₂基TFTs的电学性能

Table 3. Electrical properties of solution-processed SnO₂-based TFTs.

Solute	Dopant	Concentration /mol·L^–1	Substrate	Channel thickness/nm	Annealing temperature /℃	Mobility /cm²·V^–1·s^–1	I_on/I_off	SS/V·dec^–1	Ref.
SnCl₂·2H₂O	—	0.02	SiO₂/Si	3.8	500	11.2	6.8 × 10⁶	0.78	[63]
SnCl₂·2H₂O	—	0.167	HfO₂/Mo	9.2	300	99.16	1.7 × 10⁸	0.114	[64]
SnCl₂·2H₂O	Ga(NO₃)₃ ·xH₂O	0.12	SiO₂/Si	—	400	4.1	6.6 × 10⁶	0.77	[65]
SnCl₂·2H₂O	—	0.03	SiO₂/Si	—	500	12.18	5 × 10⁷	1.17	[66]
SnCl₂·2H₂O	—	0.1	ZrO₂/ITO	22	400	103	10⁴—10⁵	0.3	[67]
C₁₆H₃₀O₄Sn	—	0.5	Al₂O₃/ITO	15	350	96.4	2.2 × 10⁶	0.26	[68]

下载: 导出CSV

表 4 溶液法制备p型SnO₂基薄膜的电学性能

Table 4. Electrical properties of solution-processed p type SnO₂-based films.

Solute	Dopant	Resistivity /Ω·cm	Carrier density/cm^–3	Hall Mobility /cm²·V^–1·s^–1	Bandgap/eV	Technique	Ref.
SnCl₂·2H₂O	AlCl₃	3.6 × 10^–2	6.7 × 10¹⁸	25.90	4.11	spray pyrolysis	[74]
SnCl₂·2H₂O	Ga(NO₃)₃·H₂O	1.6	1.70 × 10¹⁸	6.34	3.83	spin-coating	[75]
SnCl₂·2H₂O	InCl₃·4H₂O	20.4	1.85 × 10¹⁷	1.57	3.8	dip-coating	[76]
SnCl₂·2H₂O	InCl₃·4H₂O, GaCl₃	0.17	9.5 × 10¹⁷	39.2	3.38	spray pyrolysis	[77]
SnCl₂·2H₂O	FeCl₃·6H₂O	660	1.4 × 10¹⁵	6.75	3.75	dip-coating	[78]
SnCl₂·2H₂O	MgCl₂·6H₂O	2.5 × 10⁴	10¹⁴	1.6	3.73	spin-coating	[79]
SnCl₂·2H₂O	MnCl₂	359.1	6.72 × 10¹⁴	6.14	3.85	dip-coating	[80]
SnCl₂·2H₂O	CoCl₂·6H₂O	140	1.47 × 10¹⁵	8.25	3.81	spin-coating	[81]

下载: 导出CSV

[1]	Grundmann M, Frenzel H, Lajn A, Lorenz M, Schein F, von Wenckstern H 2010 Phys. Status Solidi Appl. Mater. Sci. 207 1437 Google Scholar
[2]	Yu X, Marks T J, Facchetti A 2016 Nat. Mater. 15 383 Google Scholar
[3]	Park J, Kim H, Kim I 2014 J. Electroceram. 32 117 Google Scholar
[4]	Hosono H 2007 Thin Solid Films 515 6000 Google Scholar
[5]	Park J S, Maeng W J, Kim H S, Park J S 2012 Thin Solid Films 520 1679 Google Scholar
[6]	Facchetti A, Marks T J 2010 Transparent Electron. From Synth. to Appl. 561 2002
[7]	Fortunato E, Barquinha P, Martins R 2012 Adv. Mater. 24 2945 Google Scholar
[8]	Chopra K L, Major S, Pandya D K 1983 Thin Solid Films. 102 1 Google Scholar
[9]	Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488 Google Scholar
[10]	Yang T, Qin X, Wang H H, Jia Q, Yu R, Wang B, Wang J, Ibrahim K, Jiang X, He Q 2010 Thin Solid Films 518 5542 Google Scholar
[11]	Fang F, Zhang Y, Wu X, ShaO Q, Xie Z 2015 Mater. Res. Bull. 68 240 Google Scholar
[12]	Ning H L, Liu X Z, Zhang H K, Fang Z Q, Cai W, Chen J Q, Yao R H, Xu M, Wang L, Lan L F, Peng J B, Wang X F, Zhang Z C 2017 Materials (Basel) 10 24 Google Scholar
[13]	Jadhav H, Suryawanshi S, More M A, Sinha S 2017 Appl. Surf. Sci. 419 764 Google Scholar
[14]	El-Gendy Y A 2017 Phys. B Condens. Matter 526 59 Google Scholar
[15]	Bae J Y, Park J, Kim H Y, Kim H S, Park J S 2015 ACS Appl. Mater. Interfaces 7 12074 Google Scholar
[16]	Jiménez V M, Espinós J P, González-Elipe A R, Caballero A, Yubero F 1999 J. Phys. IV 9 749 Google Scholar
[17]	Choi Y J, Gong S C, Johnson D C, Golledge S, Yeom G Y, Park H H 2013 Appl. Surf. Sci. 269 92 Google Scholar
[18]	Park J W, Kang B H, Kim H J 2020 Adv. Funct. Mater. 30 1904632 Google Scholar
[19]	Ning H L, Liu X Z, Ruan H G, Peng C, Huang F X, Deng Y X, Yuan W J, Yao R H, Qiu B, Wang X F, Peng J B 2019 AIP Adv. 9 11 Google Scholar
[20]	Salmani E, Laghrissi A, Lamouri R, Rouchdi M, Dehmani M, Ez-Zahraouy H, Hassanain N, Mzerd A, Benyoussef A 2018 Opt. Quantum Electron. 50 85 Google Scholar
[21]	Pons D, Bourgoin J C 1985 J. Phys. C Solid State Phys. 18 3839 Google Scholar
[22]	Shukla T S 2012 J. Sens. Technol. 2 102 Google Scholar
[23]	Scanlon D O, Watson G W 2012 J. Mater. Chem. 22 25236 Google Scholar
[24]	Terrier C, Chatelon J P, Berjoan R, Roger J A 1995 Thin Solid Films 263 37 Google Scholar
[25]	Mäki-Jaskari M A, Rantala T T 2002 Phys. Rev. B - Condens. Matter Mater. Phys. 65 1 Google Scholar
[26]	Kılıç Ç, Zunger A 2002 Phys. Rev. Lett. 88 955011 Google Scholar
[27]	Singh A K, Janotti A, Scheffler M, van De Walle C G 2008 Phys. Rev. Lett. 101 1 Google Scholar
[28]	倪佳苗, 赵修建, 郑小林, 赵江 2009 真空科学与技术学报 29 531 Google Scholar NI J M, Zhao X J, Zheng X L, Zhao J 2009 Zhenkong Kexue Yu Jishu Xuebao 29 531 Google Scholar
[29]	望咏林, 颜悦, 沈玫, 贺会权, 张官理 2006 材料导报 20 317 Google Scholar Wang Y L, Yan Y, Shen M, He H Q, Zhang G L 2006 Mater. Rev. 20 317 Google Scholar
[30]	刘宏燕, 颜悦, 望咏林, 伍建华, 张官理, 厉蕾 2015 航空材料学报 35 63 Liu H Y, Yan Y, Wang Y L, Wu J H, Zhang G L, Li L J. Aeronaut. Mater. 35 63 (in Chinese)
[31]	王立坤, 郁建元, 王丽, 牛孝友, 付晨, 邱茹蒙, 晏伟静, 赵洪力 2018 硅酸盐学报 46 590 Wang L K, Yu J Y, Wang L, Niu X Y, Fu C, Qiu Y M, Yan W J, Zhao H L 2018 J. Chin. Ceram. Soc. 46 590
[32]	Noguchi S, Sakata H 1980 J. Phys. D. Appl. Phys. 13 1129 Google Scholar
[33]	Galceran Mestres M, Pujol Baiges M C, Aguiló Díaz M 2010 Ph. D. Dissertation (Tarragona: Universitat Rovira i Virgili.)
[34]	武志刚, 高建峰 2010 精细化工 027 21 Wu Z G, Gao J F 2010 Fine Chem. 027 21
[35]	Park B, Na S Y, Bae I G 2019 Sci. Rep. 9 1 Google Scholar
[36]	Filipovic L, Selberherr S, Mutinati G C, Brunet E, Steinhauer S, Köck A, Teva J, Kraft J, Siegert J, Schrank F 2013 Proc. world. Cong. Eng. 2 987
[37]	Aymerich M, Gómez-Varela A I, Álvarez E, Flores-Arias M T 2016 Materials (Basel. 9 728 Google Scholar
[38]	Lau G K, Shrestha M 2017 Micromachines 8 1 Google Scholar
[39]	Krebs F C 2009 Sol. Energy Mater. Sol. Cells. 93 394 Google Scholar
[40]	李宁, 卢迪芬 2004 玻璃与搪瓷 6 12 Google Scholar Li N, Lu D F 2004 Glass&Enamel 6 12 Google Scholar
[41]	Korotcenkov G, Brinzari V, Schwank J, DiBattista M, Vasiliev A 2001 Sensors Actuators, B Chem. 77 244 Google Scholar
[42]	Falcony C, Aguilar-Frutis M A, García-Hipólito M 2018 Micromachines 9 1 Google Scholar
[43]	Landau L, Levich B 1988 Dyn. Curved Front. 17 141
[44]	Vilà A, Gomez A, Portilla L, Morante J R 2014 Thin Solid Films 553 118 Google Scholar
[45]	Betz U, Kharrazi Olsson M, Marthy J, Escolá M F, Atamny F 2006 Surf. Coatings Technol. 200 5751 Google Scholar
[46]	Lee S M, Lee J M, Kwon S J, Cho E S 2013 Mol. Cryst. Liq. Cryst. 586 138 Google Scholar
[47]	May C, Tomita Y, Toerker M, Eritt M, Loeffler F, Amelung J, Leo K 2008 Thin Solid Films 516 4609 Google Scholar
[48]	Park S K, Han J I, Kim W K, Kwak M G 2001 Thin Solid Films 397 49 Google Scholar
[49]	Agashe C, Major S S 1996 J. Phys. D. Appl. Phys. 29 2988 Google Scholar
[50]	Luo Y R 2007 Comprehensive Handbook of Chemical Bond Energies(Boca Raton: CRC Press) p1
[51]	Karthick P, Vijayanarayanan D, Sridharan M, Ananth A K, Sanjeeviraja C, Jeyadheepan K 2017 Thin Solid Films 631 1 Google Scholar
[52]	Tran Q P, Fang J S, Chin T S 2015 Mater. Sci. Semicond. Process. 40 664 Google Scholar
[53]	Lee K M, Shih K L, Chiang C H, Suryanarayanan V, Wu C G 2014 Thin Solid Films 570 7 Google Scholar
[54]	Upadhyay J P, Vishwakarma S R, Prasad H C 1988 Thin Solid Films 167 7 Google Scholar
[55]	An H R, Kim C, Oh S T, Ahn H J 2014 Ceram. Int. 40 385 Google Scholar
[56]	Elangovan E, Shivashankar S A, Ramamurthi K 2005 J. Cryst. Growth 276 215 Google Scholar
[57]	Turgut G 2015 Thin Solid Films 594 56 Google Scholar
[58]	Turgut G, Keskenler E F, Aydin S, Sönmez E, Doǧan S, Düzgün B, Ertuǧrul M 2013 Superlattices Microstruct. 56 107 Google Scholar
[59]	Turgut G 2015 Philos. Mag. 95 1607 Google Scholar
[60]	Huang Y, Li D, Feng J, Li G, Zhang Q 2010 J. Sol-Gel Sci. Technol. 54 276 Google Scholar
[61]	Gokulakrishnan V, Parthiban S, Jeganathan K, Ramamurthi K 2011 J. Mater. Sci. 46 5553 Google Scholar
[62]	Marius G, Heiko F, Alexander L, Michael L, Friedrich S, H. von W 2010 Phys. Status Solidi A 1449 1437
[63]	Jang B, Kim T, Lee S, Lee W Y, Kang H, Cho C S, Jang J 2018 IEEE Electron Device Lett. 39 1179 Google Scholar
[64]	Avis C, Ki Y G, Jang J, 2019 Materials (Basel) 12 3341 Google Scholar
[65]	Liu C, Wang Z 2018 AM-FPD 2018 - 25 th International Workshop on Active-Matrix Flatpanel Displays Devices Kyoto, Japan July 3−6, 2018 p
[66]	Lee W, Jang B, Lee S, Kim T, Jang J 2018 25 th Int. Work. Act. Flatpanel Displays Devices 1
[67]	Jang J, Kitsomboonloha R, Swisher S L, Park E S, Kang H, Subramanian V 2013 Adv. Mater. 25 1042 Google Scholar
[68]	Huang G, Duan L, Dong G, Zhang D, Qiu Y 2014 ACS Appl. Mater. Interfaces 6 20786 Google Scholar
[69]	Zhao Y, Dong G, Duan L, Qiao J, Zhang D, Wang L, Qiu Y 2012 RSC Adv. 2 5307 Google Scholar
[70]	Kim S J, Yoon S, Kim H J 2014 Japanese journal of applied physics 2 1 Google Scholar
[71]	Liu A, Zhu H, Sun H, Xu Y, Noh Y Y 2018 Adv. Mater. 30 1 Google Scholar
[72]	Wang Z, Nayak P K, Caraveo-Frescas J A, Alshareef H N 2016 Adv. Mater. 28 3831 Google Scholar
[73]	Hiroshi K, Hiroshi Yanagi K U 2000 MRS Bull. 25 28 Google Scholar
[74]	Bagheri-Mohagheghi M M, Shokooh-Saremi M 2004 J. Phys. D. Appl. Phys. 37 1248 Google Scholar
[75]	Tsay C Y, Liang S C 2015 J. Alloys Compd. 622 644 Google Scholar
[76]	Ji Z, He Z, Song Y, Liu K, Ye Z Z 2003 J. Cryst. Growth 259 282 Google Scholar
[77]	Mao Q N, Ji Z G, Zhao L N 2010 Phys. Status Solidi B 247 299 Google Scholar
[78]	Soitah T N, Yang C, Sun L 2010 Mater. Sci. Semicond. Process. 13 125 Google Scholar
[79]	Li X, Deng R, Li Y, Yao B, Ding Z, Qin J, Liang Q 2016 Ceram. Int. 42 5299 Google Scholar
[80]	Ghodsi F E, Mazloom J 2012 Appl. Phys. A Mater. Sci. Process. 108 693 Google Scholar
[81]	Mazloom J, Ghodsi F E 2013 Mater. Res. Bull. 48 1468 Google Scholar
[82]	Ye Q, Zhang X, Guo D, Xu W, Ning H, Qiu T, Li J, Hou D, Yao R, Peng J 2020 Coatings 10 399 Google Scholar

[1]	张雪, KimBokyung, LeeHyeonju, ParkJaehoon. 低温快速制备基于溶液工艺的高性能氧化铟薄膜及晶体管. 物理学报, 2024, 73(9): 096802. doi: 10.7498/aps.73.20240082
[2]	赵泽贤, 徐萌, 彭聪, 张涵, 陈龙龙, 张建华, 李喜峰. 喷墨打印高迁移率铟锌锡氧化物薄膜晶体管. 物理学报, 2024, 73(12): 128501. doi: 10.7498/aps.73.20240361
[3]	徐华, 刘京栋, 蔡炜, 李民, 徐苗, 陶洪, 邹建华, 彭俊彪. N ₂O处理对背沟刻蚀金属氧化物薄膜晶体管性能的影响. 物理学报, 2022, 71(5): 058503. doi: 10.7498/aps.71.20211350
[4]	朱宇博, 徐华, 李民, 徐苗, 彭俊彪. 镨掺杂铟镓氧化物薄膜晶体管的低频噪声特性分析. 物理学报, 2021, 70(16): 168501. doi: 10.7498/aps.70.20210368
[5]	邵龑, 丁士进. 氢元素对铟镓锌氧化物薄膜晶体管性能的影响. 物理学报, 2018, 67(9): 098502. doi: 10.7498/aps.67.20180074
[6]	兰林锋, 张鹏, 彭俊彪. 氧化物薄膜晶体管研究进展. 物理学报, 2016, 65(12): 128504. doi: 10.7498/aps.65.128504
[7]	王静, 刘远, 刘玉荣, 吴为敬, 罗心月, 刘凯, 李斌, 恩云飞. 铟锌氧化物薄膜晶体管局域态分布的提取方法. 物理学报, 2016, 65(12): 128501. doi: 10.7498/aps.65.128501
[8]	朱乐永, 高娅娜, 张建华, 李喜峰. 溶胶凝胶法制备以HfO2为绝缘层和ZITO为有源层的高迁移率薄膜晶体管. 物理学报, 2015, 64(16): 168501. doi: 10.7498/aps.64.168501
[9]	宁洪龙, 胡诗犇, 朱峰, 姚日晖, 徐苗, 邹建华, 陶洪, 徐瑞霞, 徐华, 王磊, 兰林锋, 彭俊彪. 铜-钼源漏电极对非晶氧化铟镓锌薄膜晶体管性能的改善. 物理学报, 2015, 64(12): 126103. doi: 10.7498/aps.64.126103
[10]	刘远, 吴为敬, 李斌, 恩云飞, 王磊, 刘玉荣. 非晶铟锌氧化物薄膜晶体管的低频噪声特性与分析. 物理学报, 2014, 63(9): 098503. doi: 10.7498/aps.63.098503
[11]	徐华, 兰林锋, 李民, 罗东向, 肖鹏, 林振国, 宁洪龙, 彭俊彪. 源漏电极的制备对氧化物薄膜晶体管性能的影响. 物理学报, 2014, 63(3): 038501. doi: 10.7498/aps.63.038501
[12]	高娅娜, 李喜峰, 张建华. 溶胶凝胶法制备高性能锆铝氧化物作为绝缘层的薄膜晶体管. 物理学报, 2014, 63(11): 118502. doi: 10.7498/aps.63.118502
[13]	李喜峰, 信恩龙, 石继锋, 陈龙龙, 李春亚, 张建华. 低温透明非晶IGZO薄膜晶体管的光照稳定性. 物理学报, 2013, 62(10): 108503. doi: 10.7498/aps.62.108503
[14]	李帅帅, 梁朝旭, 王雪霞, 李延辉, 宋淑梅, 辛艳青, 杨田林. 高迁移率非晶铟镓锌氧化物薄膜晶体管的制备与特性研究. 物理学报, 2013, 62(7): 077302. doi: 10.7498/aps.62.077302
[15]	陈晓雪, 姚若河. 基于表面势的氢化非晶硅薄膜晶体管直流特性研究. 物理学报, 2012, 61(23): 237104. doi: 10.7498/aps.61.237104
[16]	强蕾, 姚若河. 非晶硅薄膜晶体管沟道中阈值电压及温度的分布. 物理学报, 2012, 61(8): 087303. doi: 10.7498/aps.61.087303
[17]	赵孔胜, 轩瑞杰, 韩笑, 张耕铭. 基于氧化铟锡的无结低电压薄膜晶体管. 物理学报, 2012, 61(19): 197201. doi: 10.7498/aps.61.197201
[18]	王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢. 氧化锌锡薄膜晶体管的研究. 物理学报, 2011, 60(3): 037305. doi: 10.7498/aps.60.037305
[19]	徐天宁, 吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健. In2O3 透明薄膜晶体管的制备及其电学性能的研究. 物理学报, 2010, 59(7): 5018-5022. doi: 10.7498/aps.59.5018
[20]	杜丕一, 隋帅, 翁文剑, 韩高荣, 汪建勋. Mg掺杂PST薄膜的溶胶-凝胶法制备及晶相形成研究. 物理学报, 2005, 54(11): 5411-5416. doi: 10.7498/aps.54.5411

计量

文章访问数: 18739
PDF下载量: 496
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板