搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

磁控溅射制备Y2O3-TiO2薄膜形貌的研究

曹月华 狄国庆

引用本文:
Citation:

磁控溅射制备Y2O3-TiO2薄膜形貌的研究

曹月华, 狄国庆

Analysis of Y2O3 doped TiO2 films topography prepared by radio frequency magnetron sputtering

Cao Yue-Hua, Di Guo-Qing
PDF
导出引用
  • 室温下采用射频磁控溅射法,在硅衬底上制备了Y2O3-TiO2氧化物复合薄膜.利用XRD(X-ray diffraction)和AFM( atomic force microscopy)分析观察了退火前后样品的物相、形貌等变化,讨论了致密薄膜的生长机理.实验发现,溅射功率越大,薄膜的平整度和致密度越好.对热处理前后样品的结晶结构和表面形貌的分析结果显示,在本实验参数范围内,随着溅射功率的增大,更多的Y2O3
    Y2O3-TiO2 composite film were deposited on Si substrate at room temperature by means of radio frequency magnetron sputtering. The crystalline state and topography of the film before and after annealing were measured by XRD and AFM, and the mechanism of the film being more compact was discussed. The result revealed that the evenness and compactness of the film can be improved with increasing the sputtering power, which is due to the fact of more Y2O3 filling the pores around TiO2with raising sputtering power, which inhibited the growth of big TiO\-2 grains and improved the evenness and compactness of film. After annealing, XRD pattern indicated that the addition of Y2O3 favors the formation of rutile TiO2 film which has high-dielectric constant.
    • 基金项目: 江苏省高校自然科学重大基础研究项目(批准号:05KJA43006)资助的课题.
    [1]

    Mikhelashvili V, Eisenstein G 2001 Microelectronics Reliability 41 1057

    [2]

    Suhail M H, Mohan Rao G, Mohan 1992 J. Appl. Phys. 71 1421

    [3]

    Hu Z G, Li W W, Wu J D, Sun J, Shu Q W, Zhong X X, Zhu Z Q, Chu J H 2008 Appl. Phys. Lett. 93 181910-1

    [4]

    Zhang M, Lin G Q, Dong C, Wen L S 2007 Acta Phys. Sin. 56 7300 (in Chinese)[张敏、林国强、董 闯、闻立时 2007 物理学报 56 7300]

    [5]

    Gassim G, Alkhateeb N, Hussein H 2007 Desalination 209 342

    [6]

    Meulen T, Mattson A, Osterlund L 2007 Journal of Catalysis 251 131

    [7]

    Wang H, Wu Y, Xu B Q 2005 Applied Catalysis B: Environmental 59 139

    [8]

    Weinberger B R, Garber R B 1994 Appl. Phys. Lett. 66 2409

    [9]

    Wang S F, Hsu Y F, Lee Y S 2006 Ceramics International 32 121

    [10]

    Okimura K, Maeda N, Shibata A 1996 Thin Solid Films 281 427

    [11]

    Tang H, Parasad K, Sanjines R, Schmid P E, Levy F 1994 J. Appl. Phys. 75 2042

    [12]

    Albertin K F, Pereyra I 2009 Thin Solid Films 517 4548

    [13]

    Kadoshima M, Hiratani M, Shimamoto Y, Torii K, Miki H, Kimura S, Nabatame T 2003 Thin Solid Films 424 224

    [14]

    Song G B, Liu F S, Peng T J, Liang J K, Rao G H 2002 Acta Phys. Sin. 51 2793 (in Chinese)[宋功保、刘福生、彭同江、梁敬魁、饶光辉 2002 物理学报 51 2793]

    [15]

    Tang J Y 2001 Acta Phys. Sin. 50 2198 (in Chinese) [唐俊勇 2001 物理学报 50 2198]

    [16]

    Cui Y F, Yuan Z H 2005 Acta Phys. Sin. 55 5172 (in Chinese) [崔永峰、袁志好 2005 物理学报 55 5172]

    [17]

    Wang S F, Hsu Y F, Lee R L, Lee Y S 2004 Applied Surface Science 229 140

    [18]

    Granta C D, Schwartzberga A M, Smestadb G P, Kowalik J, Tolbert L M, Zhang J Z 2003 Synthetic Metals 132 197

    [19]

    Smestada G P, Spiekermannb S, Kowalik J, Granta C D, Schwartzberga A M, Zhang J, Tolbert L M, Moons E 2003 Solar Energy Materials & Solar Cells 76 85

    [20]

    Saito Y, Kitamura T, Wada Y J, Yanagida S 2002 Synthetic Metals 131 185

    [21]

    Li B, Wang L D, Zhang D Q, Qiu Y 2003 Chinese Science Bulletin 48 22 (in Chinese) [李 斌、王立铎、张德强、邱 勇 2003 科学通报 48 22]

    [22]

    Zhang W J, Zhu S L, Li Y, Wang F H, He H B 2009 Plating & Finishing 31 3 (in Chinese)[张文杰、朱圣龙、李 瑛、王福会、何红波 2009 电镀与精饰 31 3]

    [23]

    Raghavan D, Gu X, Nguyen T, VanLandingham M, Karim A 2000 Macromelecules 33 2573

    [24]

    Zhu C F, Wang C 2007 Scanning probe microscopy application progress(Binjing: chemical industry press)p5 (in Chinese) [朱传风、王琛著 2007扫描探针显微术应用进展(北京:化学工业出版社)第5页]

    [25]

    Zhang W J, Wang K L, Zhu S L, Li Y, Wang F H, He H B 2009 Chemicsl Engineering Journal 155 83

    [26]

    Huo H B, Liu Z T, Yan F, 2008 Materials Review 22 123 (in Chinese) [霍会宾、刘正堂、阎 锋2008材料导报22 123]

  • [1]

    Mikhelashvili V, Eisenstein G 2001 Microelectronics Reliability 41 1057

    [2]

    Suhail M H, Mohan Rao G, Mohan 1992 J. Appl. Phys. 71 1421

    [3]

    Hu Z G, Li W W, Wu J D, Sun J, Shu Q W, Zhong X X, Zhu Z Q, Chu J H 2008 Appl. Phys. Lett. 93 181910-1

    [4]

    Zhang M, Lin G Q, Dong C, Wen L S 2007 Acta Phys. Sin. 56 7300 (in Chinese)[张敏、林国强、董 闯、闻立时 2007 物理学报 56 7300]

    [5]

    Gassim G, Alkhateeb N, Hussein H 2007 Desalination 209 342

    [6]

    Meulen T, Mattson A, Osterlund L 2007 Journal of Catalysis 251 131

    [7]

    Wang H, Wu Y, Xu B Q 2005 Applied Catalysis B: Environmental 59 139

    [8]

    Weinberger B R, Garber R B 1994 Appl. Phys. Lett. 66 2409

    [9]

    Wang S F, Hsu Y F, Lee Y S 2006 Ceramics International 32 121

    [10]

    Okimura K, Maeda N, Shibata A 1996 Thin Solid Films 281 427

    [11]

    Tang H, Parasad K, Sanjines R, Schmid P E, Levy F 1994 J. Appl. Phys. 75 2042

    [12]

    Albertin K F, Pereyra I 2009 Thin Solid Films 517 4548

    [13]

    Kadoshima M, Hiratani M, Shimamoto Y, Torii K, Miki H, Kimura S, Nabatame T 2003 Thin Solid Films 424 224

    [14]

    Song G B, Liu F S, Peng T J, Liang J K, Rao G H 2002 Acta Phys. Sin. 51 2793 (in Chinese)[宋功保、刘福生、彭同江、梁敬魁、饶光辉 2002 物理学报 51 2793]

    [15]

    Tang J Y 2001 Acta Phys. Sin. 50 2198 (in Chinese) [唐俊勇 2001 物理学报 50 2198]

    [16]

    Cui Y F, Yuan Z H 2005 Acta Phys. Sin. 55 5172 (in Chinese) [崔永峰、袁志好 2005 物理学报 55 5172]

    [17]

    Wang S F, Hsu Y F, Lee R L, Lee Y S 2004 Applied Surface Science 229 140

    [18]

    Granta C D, Schwartzberga A M, Smestadb G P, Kowalik J, Tolbert L M, Zhang J Z 2003 Synthetic Metals 132 197

    [19]

    Smestada G P, Spiekermannb S, Kowalik J, Granta C D, Schwartzberga A M, Zhang J, Tolbert L M, Moons E 2003 Solar Energy Materials & Solar Cells 76 85

    [20]

    Saito Y, Kitamura T, Wada Y J, Yanagida S 2002 Synthetic Metals 131 185

    [21]

    Li B, Wang L D, Zhang D Q, Qiu Y 2003 Chinese Science Bulletin 48 22 (in Chinese) [李 斌、王立铎、张德强、邱 勇 2003 科学通报 48 22]

    [22]

    Zhang W J, Zhu S L, Li Y, Wang F H, He H B 2009 Plating & Finishing 31 3 (in Chinese)[张文杰、朱圣龙、李 瑛、王福会、何红波 2009 电镀与精饰 31 3]

    [23]

    Raghavan D, Gu X, Nguyen T, VanLandingham M, Karim A 2000 Macromelecules 33 2573

    [24]

    Zhu C F, Wang C 2007 Scanning probe microscopy application progress(Binjing: chemical industry press)p5 (in Chinese) [朱传风、王琛著 2007扫描探针显微术应用进展(北京:化学工业出版社)第5页]

    [25]

    Zhang W J, Wang K L, Zhu S L, Li Y, Wang F H, He H B 2009 Chemicsl Engineering Journal 155 83

    [26]

    Huo H B, Liu Z T, Yan F, 2008 Materials Review 22 123 (in Chinese) [霍会宾、刘正堂、阎 锋2008材料导报22 123]

  • [1] 潘宵, 鞠焕鑫, 冯雪飞, 范其瑭, 王嘉兴, 杨耀文, 朱俊发. F8BT薄膜表面形貌及与Al形成界面的电子结构和反应. 物理学报, 2015, 64(7): 077304. doi: 10.7498/aps.64.077304
    [2] 佟国香, 李毅, 王锋, 黄毅泽, 方宝英, 王晓华, 朱慧群, 梁倩, 严梦, 覃源, 丁杰, 陈少娟, 陈建坤, 郑鸿柱, 袁文瑞. 磁控溅射制备W掺杂VO2/FTO复合薄膜及其性能分析. 物理学报, 2013, 62(20): 208102. doi: 10.7498/aps.62.208102
    [3] 张传军, 邬云骅, 曹鸿, 高艳卿, 赵守仁, 王善力, 褚君浩. 不同衬底和CdCl2退火对磁控溅射CdS薄膜性能的影响. 物理学报, 2013, 62(15): 158107. doi: 10.7498/aps.62.158107
    [4] 景蔚萱, 王兵, 牛玲玲, 齐含, 蒋庄德, 陈路加, 周帆. ZnO纳米线薄膜的合成参数、表面形貌和接触角关系研究. 物理学报, 2013, 62(21): 218102. doi: 10.7498/aps.62.218102
    [5] 苏元军, 徐军, 朱明, 范鹏辉, 董闯. 利用等离子体辅助脉冲磁控溅射实现多晶硅薄膜的低温沉积. 物理学报, 2012, 61(2): 028104. doi: 10.7498/aps.61.028104
    [6] 张玲, 何智兵, 廖国, 谌家军, 许华, 李俊. B掺杂对Ti薄膜结构与性能的影响. 物理学报, 2012, 61(18): 186803. doi: 10.7498/aps.61.186803
    [7] 李林娜, 陈新亮, 王斐, 孙建, 张德坤, 耿新华, 赵颖. H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响. 物理学报, 2011, 60(6): 067304. doi: 10.7498/aps.60.067304
    [8] 丁万昱, 王华林, 巨东英, 柴卫平. O2流量对磁控溅射N掺杂TiO2薄膜成分及晶体结构的影响. 物理学报, 2011, 60(2): 028105. doi: 10.7498/aps.60.028105
    [9] 狄国庆. 溅射制备Ta2O5薄膜的表面形貌与光学特性. 物理学报, 2011, 60(3): 038101. doi: 10.7498/aps.60.038101
    [10] 丁万昱, 徐军, 陆文琪, 邓新绿, 董闯. 微波ECR磁控溅射制备SiNx薄膜的XPS结构研究. 物理学报, 2009, 58(6): 4109-4116. doi: 10.7498/aps.58.4109
    [11] 张丽卿, 张崇宏, 杨义涛, 姚存峰, 孙友梅, 李炳生, 赵志明, 宋书建. 高电荷态离子126Xeq+引起GaN表面形貌变化研究. 物理学报, 2009, 58(8): 5578-5584. doi: 10.7498/aps.58.5578
    [12] 刘 峰, 孟月东, 任兆杏, 舒兴胜. 感应耦合等离子体增强射频磁控溅射沉积ZrN薄膜及其性能研究. 物理学报, 2008, 57(3): 1796-1801. doi: 10.7498/aps.57.1796
    [13] 张 辉, 刘应书, 刘文海, 王宝义, 魏 龙. 基片温度与氧分压对磁控溅射制备氧化钒薄膜的影响. 物理学报, 2007, 56(12): 7255-7261. doi: 10.7498/aps.56.7255
    [14] 胡 冰, 李晓娜, 董 闯, 姜 辛. 磁控溅射法合成纳米β-FeSi2/a-Si多层结构. 物理学报, 2007, 56(12): 7188-7194. doi: 10.7498/aps.56.7188
    [15] 丁万昱, 徐 军, 李艳琴, 朴 勇, 高 鹏, 邓新绿, 董 闯. 微波ECR等离子体增强磁控溅射制备SiNx薄膜及其性能分析. 物理学报, 2006, 55(3): 1363-1368. doi: 10.7498/aps.55.1363
    [16] 刘志文, 谷建峰, 孙成伟, 张庆瑜. 磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究. 物理学报, 2006, 55(4): 1965-1973. doi: 10.7498/aps.55.1965
    [17] 周小莉, 杜丕一. 磁控溅射法制备的CaCu3Ti4O12薄膜. 物理学报, 2005, 54(4): 1809-1813. doi: 10.7498/aps.54.1809
    [18] 欧谷平, 宋 珍, 桂文明, 张福甲. 原子力显微镜与x射线光电子能谱对LiBq4/ITO和LiBq4/CuPc/ITO的表面分析. 物理学报, 2005, 54(12): 5717-5722. doi: 10.7498/aps.54.5717
    [19] 汪 渊, 白宣羽, 徐可为. 基于小波变换Cu-W薄膜表面形貌表征与硬度值分散性评价. 物理学报, 2004, 53(7): 2281-2286. doi: 10.7498/aps.53.2281
    [20] 马平, 刘乐园, 张升原, 王昕, 谢飞翔, 邓鹏, 聂瑞娟, 王守证, 戴远东, 王福仁. 直流磁控溅射一步法原位制备MgB2超导薄膜. 物理学报, 2002, 51(2): 406-409. doi: 10.7498/aps.51.406
计量
  • 文章访问数:  7970
  • PDF下载量:  686
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-05-03
  • 修回日期:  2010-06-11
  • 刊出日期:  2011-03-15

/

返回文章
返回