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本文建立了绝缘材料等离子体浸没离子注入过程的动力学Particle-in-cell(PIC)模型, 将二次电子发射系数直接与离子注入即时能量建立关联, 研究了非导电聚合物厚度、介电常数和二次电子发射系数对表面偏压电位的影响规律以及栅网诱导效应. 研究结果表明: 非导电聚合物较厚时, 表面自偏压难以实现全方位离子注入, 栅网诱导可以间接为非导电聚合物提供偏压, 并抑制二次电子发射, 为厚大非导电聚合物表面等离子体浸没离子注入提供了有效途径.
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关键词:
- 非导电 /
- 聚合物 /
- 二次电子发射 /
- 等离子体浸没离子注入
Plasma immersion ion implantation (PIII) of non-conductor polymer materials is inherently difficult because the voltage across the sheath is reduced by the voltage drop across the insulator due to dielectric capacitance and charge accumulation on the insulator surface. Based on the particle-in-cell (PIC) model, the secondary electron emission (SEE) coefficient is related to the instant energy of implanting ions. Statistical results can be obtained through scouting each ion in the plasma sheath. The evolution of surface potential is simulated for ion implantation on insulator materials. The effects of thickness, dielectric constant and SEE coefficient on the surface bias potential and the effect of mesh-inducing are studied. For thicker non-conductor polymer, it is difficult to achieve omni-directional implantation by self-bias. The mesh-assisted PIII can improve the equivalent surface potential, suppress the emission of secondary electrons and provide an effective way for ion implantation on insulator.[1] Ferrante D, Iannace S, Monetta T 1999 J. Mater. Sci. 34 175
[2] Kwok D T K 2006 IEEE Trans. Plasma Sci. 34 1059
[3] Riccardi C, Barni R, Selli E, Mazzone G, Massafra M R, Marcandalli B, Poletti G 2003 Appl. Surf. Sci. 211 386
[4] Zhang D C, Shen Y Y, Huang Y J, Wang Z, Liu C L 2010 Acta Phys. Sin. 59 7974 (in Chinese) [张大成, 申艳艳, 黄元杰, 王卓, 刘昌龙 2010 物理学报 59 7974]
[5] Hu X J, Hu H, Chen X H, Xu B Acta Phys. Sin. 60 068101 (in Chinese) [胡晓君, 胡衡, 陈小虎, 许贝 2011 物理学报 60 068101]
[6] Zhang Y, Zhang C H, Zhou L H, Li B S, Yang Y T 2010 Acta Phys. Sin. 59 4130 (in Chinese) 张勇, 张崇宏, 周丽宏, 李炳生, 杨义涛 2010 物理学报 59 4130]
[7] Oates T W H, Bilek M M M 2002 J. Appl. Phys. 92 2980
[8] Fu R K Y, Chu P K, Tian X B 2004 J. Appl. Phys. 95 3319
[9] Lacoste A, Coeur F L, Arnal Y, Pelletier J, Grattepain C 2001 Surf. Coat. Techn. 135 268
[10] Tian X B, Fu R KY, Chen J Y, Chu P K, Brown I G 2002 Nucl. Instr. Meth. Phys. Res. B 187 485
[11] Allan S Y, Mckenzie D R, Bilek M M M 2010 Plasma Sources Sci. Techn. 19 045002
[12] Kondyurin A, Gan B K, Bilek M M M, Mizuno K, McKenzie D R 2006 Nucl. Instrum. Methods Phys. Res. B 251 413
[13] Emmert G A 1994 J. Vac. Sci. Technol. B 12 880
[14] Ueda M, Tan I H, Dallaqua R S, Rossi J O, Barroso J J, Tabacniks M H 2003 Nucl. Instr. Meth. Phys. Res. B 206 760
[15] Oates T W H, Pigott J, McKenzie D R, Bilek M M M 2003 IEEE Trans. Plasma Sci. 31 438
[16] Dai Z L, Wang Y N 2002 J. Appl. Phys. 92 6428
[17] Li X C, Wang Y N 2006 Thin Solid Films 506-507 307
[18] Huang Y X, Tian X B, Yang S Q, Fu Ricky, Chu K Paul 2007 Acta Phys. Sin. 56 4762 (in Chinese) [黄永宪, 田修波, 杨士勤, Fu R K Y, Chu K P 2007 物理学报 56 4762]
[19] Liu C S, Wang D Z, Liu T W, Wang Y W 2008 Acta Phys. Sin. 57 6450 (in Chinese) [刘成森, 王德真, 刘天伟, 王艳辉 2008 物理学报 57 6450]
[20] Verboncoeur J P 2005 Plasma Phys. Contr. F 47 A231
[21] Wang P, Tian X B, Wang Z J, Gong C Z, Yang S Q 2011 Acta Phys. Sin. 60 085206 (in Chinese) [王蓬, 田修波, 汪志键, 巩春志, 杨士勤 2010 物理学报 60 085206]
[22] Liu C S, Han H Y, Peng X Q, Chang Y, Wang Y, Wang D Z 2010 Chin. Phys. B 19 035201
[23] Bogaerts A, Gijbels R 2002 Plasma Sources Sci. Technol. 11 27
[24] Song Y H, Gong Y, Wang D Z 1995 Chinese J. Comput. Phys. 12 528 (in Chinese) [宋远红, 宫野, 王德真 1995 计算物理 12 528]
[25] Kwok D T K, Chu P K, Chun C 1998 IEEE Trans. Plasma Sci. 26 1669
[26] Sheridan T E 2000 Acta Metall. Sin. 13 611
[27] Fu R K Y, Fu K L 2004 J. Vac. Sci. Technol. A 22 356
[28] Powles R C, Kwok D T K, McKenzie D R, Bilek M M M 2005 Phys. Plasmas 12 093507
[29] Rothard H, Moshammer R, Ullrich J, Kollmus H, Mann R, Hagmann S, Zouros T J M 2007 Nucl. Instrum. Methods Phys. Res. B 258 91
[30] Kostov K G, Ueda M, Tan I H, Leite N F, Beloto A F, Gomes G F 2004 Surf. Coat. Techn. 186 287
[31] Lim H, Lee Y, Han S, Kim Y, Cho J, Kim K J 2002 Surf. Coat. Techn. 160 158
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[1] Ferrante D, Iannace S, Monetta T 1999 J. Mater. Sci. 34 175
[2] Kwok D T K 2006 IEEE Trans. Plasma Sci. 34 1059
[3] Riccardi C, Barni R, Selli E, Mazzone G, Massafra M R, Marcandalli B, Poletti G 2003 Appl. Surf. Sci. 211 386
[4] Zhang D C, Shen Y Y, Huang Y J, Wang Z, Liu C L 2010 Acta Phys. Sin. 59 7974 (in Chinese) [张大成, 申艳艳, 黄元杰, 王卓, 刘昌龙 2010 物理学报 59 7974]
[5] Hu X J, Hu H, Chen X H, Xu B Acta Phys. Sin. 60 068101 (in Chinese) [胡晓君, 胡衡, 陈小虎, 许贝 2011 物理学报 60 068101]
[6] Zhang Y, Zhang C H, Zhou L H, Li B S, Yang Y T 2010 Acta Phys. Sin. 59 4130 (in Chinese) 张勇, 张崇宏, 周丽宏, 李炳生, 杨义涛 2010 物理学报 59 4130]
[7] Oates T W H, Bilek M M M 2002 J. Appl. Phys. 92 2980
[8] Fu R K Y, Chu P K, Tian X B 2004 J. Appl. Phys. 95 3319
[9] Lacoste A, Coeur F L, Arnal Y, Pelletier J, Grattepain C 2001 Surf. Coat. Techn. 135 268
[10] Tian X B, Fu R KY, Chen J Y, Chu P K, Brown I G 2002 Nucl. Instr. Meth. Phys. Res. B 187 485
[11] Allan S Y, Mckenzie D R, Bilek M M M 2010 Plasma Sources Sci. Techn. 19 045002
[12] Kondyurin A, Gan B K, Bilek M M M, Mizuno K, McKenzie D R 2006 Nucl. Instrum. Methods Phys. Res. B 251 413
[13] Emmert G A 1994 J. Vac. Sci. Technol. B 12 880
[14] Ueda M, Tan I H, Dallaqua R S, Rossi J O, Barroso J J, Tabacniks M H 2003 Nucl. Instr. Meth. Phys. Res. B 206 760
[15] Oates T W H, Pigott J, McKenzie D R, Bilek M M M 2003 IEEE Trans. Plasma Sci. 31 438
[16] Dai Z L, Wang Y N 2002 J. Appl. Phys. 92 6428
[17] Li X C, Wang Y N 2006 Thin Solid Films 506-507 307
[18] Huang Y X, Tian X B, Yang S Q, Fu Ricky, Chu K Paul 2007 Acta Phys. Sin. 56 4762 (in Chinese) [黄永宪, 田修波, 杨士勤, Fu R K Y, Chu K P 2007 物理学报 56 4762]
[19] Liu C S, Wang D Z, Liu T W, Wang Y W 2008 Acta Phys. Sin. 57 6450 (in Chinese) [刘成森, 王德真, 刘天伟, 王艳辉 2008 物理学报 57 6450]
[20] Verboncoeur J P 2005 Plasma Phys. Contr. F 47 A231
[21] Wang P, Tian X B, Wang Z J, Gong C Z, Yang S Q 2011 Acta Phys. Sin. 60 085206 (in Chinese) [王蓬, 田修波, 汪志键, 巩春志, 杨士勤 2010 物理学报 60 085206]
[22] Liu C S, Han H Y, Peng X Q, Chang Y, Wang Y, Wang D Z 2010 Chin. Phys. B 19 035201
[23] Bogaerts A, Gijbels R 2002 Plasma Sources Sci. Technol. 11 27
[24] Song Y H, Gong Y, Wang D Z 1995 Chinese J. Comput. Phys. 12 528 (in Chinese) [宋远红, 宫野, 王德真 1995 计算物理 12 528]
[25] Kwok D T K, Chu P K, Chun C 1998 IEEE Trans. Plasma Sci. 26 1669
[26] Sheridan T E 2000 Acta Metall. Sin. 13 611
[27] Fu R K Y, Fu K L 2004 J. Vac. Sci. Technol. A 22 356
[28] Powles R C, Kwok D T K, McKenzie D R, Bilek M M M 2005 Phys. Plasmas 12 093507
[29] Rothard H, Moshammer R, Ullrich J, Kollmus H, Mann R, Hagmann S, Zouros T J M 2007 Nucl. Instrum. Methods Phys. Res. B 258 91
[30] Kostov K G, Ueda M, Tan I H, Leite N F, Beloto A F, Gomes G F 2004 Surf. Coat. Techn. 186 287
[31] Lim H, Lee Y, Han S, Kim Y, Cho J, Kim K J 2002 Surf. Coat. Techn. 160 158
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