-
用金属氧化物半导体(MOS)晶体管模型取代传统Colpitts混沌振荡电路中的三极管模型, 提出了一种基于MOS管的Colpitts混沌振荡电路. 通过合适的归一化方法, 得到了与基于三极管电路类似的状态模型. 平衡点的指标说明两种结构产生混沌的机理并不相同. 然后, 通过参数反演, 得到了详细的电路参数, 并用Pspice软件仿真得到了混沌吸引子和混沌信号的频谱图, 说明了此结构可在低电压下工作并且能产生高频率的混沌信号. 最后, 用误差反馈的方法实现了这种结构的同步.
-
关键词:
- Colpitts混沌 /
- 金属氧化物半导体晶体管 /
- 低电压 /
- 误差反馈同步
A Colpitts chaotic oscillator is proposed by replacing the bipolar transistor with metal oxide semiconductor (MOS) transistor. Through a series of variable transformations, a state model of proposed circuit similar to one of traditional Colpitts oscillators with bipolar transistors is established. The system parameters are easily obtained by matching the two similar models. Indexes of the balance point show that chaos mechanisms of the two structures are not the same. After the process of parameter inversion and scaling transformation, the detailed circuit parameters are determined. Chaotic attractor and chaotic signal frequency diagrams are generated on PSpice platform. The simulations show that the proposed structure can work under low voltage and can generate chaotic signal with high frequency. Finally, using the linear error feedback method, a synchronization of two identical chaotic circuits is achieved.-
Keywords:
- Colpitts chaotic oscillator /
- MOS transistor /
- low voltage /
- error feedback synchronization
[1] Filanovsky I M, Verhoeven C J M, Reja M 2007 IEEE Trans. Circuits Syst. II 54 800
[2] Feng C W, Cai L, Zhang L S, Yang X K, Zhao X H 2010 Acta Phys. Sin. 59 1420 (in Chinese) [冯朝文, 蔡理, 张立森, 杨晓阔, 赵晓辉 2010 物理学报 59 1420]
[3] Yang K H, Yang J L, Ding J F, Sheng L Y 2010 Acta Phys. Sin. 59 8385 (in Chinese) [孙克辉, 杨静利, 丁家峰, 盛利元 2010 物理学报 59 8385]
[4] Zheng Y, Zhang X D 2010 Chin. Phys. B 19 010505
[5] Liu M H, Yu S M 2006 Acta Phys. Sin. 55 5707 (in Chinese) [刘明华, 禹思敏 2006 物理学报 55 5707]
[6] Kennedy M P 1994 IEEE Trans. Circuits Syst. I 41 771
[7] Maggio G M, De Feo O, Kennedy M P 1999 IEEE Trans. Circuits Syst. I 46 1118
[8] De Feo O, Maggio G M 2003 Int. J. Bifurcat. Chaos 13 2917
[9] Kennedy M P 1995 IEEE Trans. Circuits Syst. I 42 376
[10] Sarafian G, Kaplan B Z 1995 IEEE Trans. Circuits Syst. I 42 373
[11] Wegener C, Kennedy M P 1995 Proceeding of the 3rd International Workshop on Nonlinear Dynamics of Electronic Systems Dublin, Ireland, July 28-29, 1995 pp255-258
[12] Namaiunas A, Tamasevicius A 1995 Electron. Lett. 31 335
[13] Mykolaitis G, Tamasevicius A, Bumeliene S 2004 Electron. Lett. 40 91
[14] Shi Z G, Zhang Y, Liu H W, Ran L X 2007 Micro. Opt. Tech. Lett. 49 1981
[15] Li J X, Ma F C 2012 International Conference on Computing, Measurement, Control and Sensor Network Taiyuan, China, July 7-9, 2012 p405
[16] Yu S M 2008 Acta Phys. Sin. 57 3374 (in Chinese) [禹思敏 2008 物理学报 57 3374]
[17] Bao B C, Liu Z, Xu J P, Zhu L 2010 Acta Phys. Sin. 59 1540 (in Chinese) [包伯成, 刘中, 许建平, 朱雷 2010 物理学报 59 1540]
[18] Behzad R (Translated by Chen G C, Cheng J, Zhang R Z) 2002 Design of Analog CMOS Integrated Circuits (Xi’an: Xi’an Jiaotong University Press) pp14-20 (in Chinese) [毕查德·拉扎维 著 (陈贵灿, 程军, 张瑞智译) 2002 模拟CMOS集成电路设计(西安: 西安交通大学出版社)第14–20页]
-
[1] Filanovsky I M, Verhoeven C J M, Reja M 2007 IEEE Trans. Circuits Syst. II 54 800
[2] Feng C W, Cai L, Zhang L S, Yang X K, Zhao X H 2010 Acta Phys. Sin. 59 1420 (in Chinese) [冯朝文, 蔡理, 张立森, 杨晓阔, 赵晓辉 2010 物理学报 59 1420]
[3] Yang K H, Yang J L, Ding J F, Sheng L Y 2010 Acta Phys. Sin. 59 8385 (in Chinese) [孙克辉, 杨静利, 丁家峰, 盛利元 2010 物理学报 59 8385]
[4] Zheng Y, Zhang X D 2010 Chin. Phys. B 19 010505
[5] Liu M H, Yu S M 2006 Acta Phys. Sin. 55 5707 (in Chinese) [刘明华, 禹思敏 2006 物理学报 55 5707]
[6] Kennedy M P 1994 IEEE Trans. Circuits Syst. I 41 771
[7] Maggio G M, De Feo O, Kennedy M P 1999 IEEE Trans. Circuits Syst. I 46 1118
[8] De Feo O, Maggio G M 2003 Int. J. Bifurcat. Chaos 13 2917
[9] Kennedy M P 1995 IEEE Trans. Circuits Syst. I 42 376
[10] Sarafian G, Kaplan B Z 1995 IEEE Trans. Circuits Syst. I 42 373
[11] Wegener C, Kennedy M P 1995 Proceeding of the 3rd International Workshop on Nonlinear Dynamics of Electronic Systems Dublin, Ireland, July 28-29, 1995 pp255-258
[12] Namaiunas A, Tamasevicius A 1995 Electron. Lett. 31 335
[13] Mykolaitis G, Tamasevicius A, Bumeliene S 2004 Electron. Lett. 40 91
[14] Shi Z G, Zhang Y, Liu H W, Ran L X 2007 Micro. Opt. Tech. Lett. 49 1981
[15] Li J X, Ma F C 2012 International Conference on Computing, Measurement, Control and Sensor Network Taiyuan, China, July 7-9, 2012 p405
[16] Yu S M 2008 Acta Phys. Sin. 57 3374 (in Chinese) [禹思敏 2008 物理学报 57 3374]
[17] Bao B C, Liu Z, Xu J P, Zhu L 2010 Acta Phys. Sin. 59 1540 (in Chinese) [包伯成, 刘中, 许建平, 朱雷 2010 物理学报 59 1540]
[18] Behzad R (Translated by Chen G C, Cheng J, Zhang R Z) 2002 Design of Analog CMOS Integrated Circuits (Xi’an: Xi’an Jiaotong University Press) pp14-20 (in Chinese) [毕查德·拉扎维 著 (陈贵灿, 程军, 张瑞智译) 2002 模拟CMOS集成电路设计(西安: 西安交通大学出版社)第14–20页]
计量
- 文章访问数: 5002
- PDF下载量: 752
- 被引次数: 0