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The material of GaAs/AlGaAs bound-to-continuum terahertz quantum-cascade laser (THz QCL) was grown by gas source molecular beam epitaxy. A THz QCL device was fabricated with semi-insulating surface-plasmon waveguide. Its spectrum and light intensity-current-voltage characteristics were studied. The device emits about 2.95 THz, and yields a maximum temperature of 67 K in pulse mode. In continuous-wave mode, it displays a threshold current density of 230 A/cm2 at 9 K with maximum emitted power of 1.2 mW and lases up to 30 K.
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Keywords:
- terahertz /
- quantum cascade lasers /
- molecular beam epitaxy /
- waveguide
[1] Cao J C 2006 Physics 35 632 (in Chinese) [曹俊诚 2006 物理 35 632]
[2] Ma Y R, Guo S F, Duan S Q 2012 Chin. Phys. B 21 037804
[3] Fu A B, Hao M R, Yang Y, Shen W Z, Liu H C 2013 Chin. Phys. B 22 026803
[4] Williams B S 2007 Nat. Photon. 1 517
[5] Cao J C, Li H, Han Y J, Tan Z Y, L J T, Luo H, Laframboise S, Liu H C 2008 Chin. Phys. Lett. 25 953
[6] Liu J Q, Chen J Y, Liu F Q, Li L, Wang L J, Wang Z G 2010 Chin. Phys. Lett. 27 104205
[7] Kumar S 2011 IEEE J. Sel. Top. Quantum Electron. 17 38
[8] Wang T, Liu J Q, Chen J Y, Liu Y H, Liu F Q, Wang L J, Wang Z G 2013 Chin. Phys. Lett. 30 064201
[9] Köhler R, Tredicucci A, Beltram F, Beere H E, Linfield E H, Davies A G, Ritchie D A, Iotti R C, Rossi F 2002 Nature 417 156
[10] Faist J, Beck M, Aellen T, Gini E 2001 Appl. Phys. Lett. 78 147
[11] Barbieri S, Alton J, Beere H E, Fowler J, Linfield E H, Ritchie D A 2004 Appl. Phys. Lett. 85 1674
[12] Williams B S, Callebaut H, Kumar S, Hu Q, Reno J L 2003 Appl. Phys. Lett. 82 1015
[13] Li H, Han Y J, Tan Z Y, Zhang R, Cao J C Acta Phys. Sin. 59 2169 (in Chinese) [黎华, 韩英军, 谭智勇, 张戎, 曹俊诚 2010 物理学报 59 2169]
[14] Chang J, Li H, Han Y J, Tan Z Y, Cao J C 2009 Acta Phys. Sin. 58 7083 (in Chinese) [常俊, 黎华, 韩英军, 谭智勇, 曹俊诚 2009 物理学报 58 7083]
[15] Kohen S, Williams B S, Hu Q 2005 J. Appl. Phys. 97 053106
[16] Lu X X, Luo H W, Yao R H, Lin Z C 2008 Microelectronics 38 469 (in Chinese) [路香香, 罗宏伟, 姚若河, 林志成 2008 微电子学 38 469]
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[1] Cao J C 2006 Physics 35 632 (in Chinese) [曹俊诚 2006 物理 35 632]
[2] Ma Y R, Guo S F, Duan S Q 2012 Chin. Phys. B 21 037804
[3] Fu A B, Hao M R, Yang Y, Shen W Z, Liu H C 2013 Chin. Phys. B 22 026803
[4] Williams B S 2007 Nat. Photon. 1 517
[5] Cao J C, Li H, Han Y J, Tan Z Y, L J T, Luo H, Laframboise S, Liu H C 2008 Chin. Phys. Lett. 25 953
[6] Liu J Q, Chen J Y, Liu F Q, Li L, Wang L J, Wang Z G 2010 Chin. Phys. Lett. 27 104205
[7] Kumar S 2011 IEEE J. Sel. Top. Quantum Electron. 17 38
[8] Wang T, Liu J Q, Chen J Y, Liu Y H, Liu F Q, Wang L J, Wang Z G 2013 Chin. Phys. Lett. 30 064201
[9] Köhler R, Tredicucci A, Beltram F, Beere H E, Linfield E H, Davies A G, Ritchie D A, Iotti R C, Rossi F 2002 Nature 417 156
[10] Faist J, Beck M, Aellen T, Gini E 2001 Appl. Phys. Lett. 78 147
[11] Barbieri S, Alton J, Beere H E, Fowler J, Linfield E H, Ritchie D A 2004 Appl. Phys. Lett. 85 1674
[12] Williams B S, Callebaut H, Kumar S, Hu Q, Reno J L 2003 Appl. Phys. Lett. 82 1015
[13] Li H, Han Y J, Tan Z Y, Zhang R, Cao J C Acta Phys. Sin. 59 2169 (in Chinese) [黎华, 韩英军, 谭智勇, 张戎, 曹俊诚 2010 物理学报 59 2169]
[14] Chang J, Li H, Han Y J, Tan Z Y, Cao J C 2009 Acta Phys. Sin. 58 7083 (in Chinese) [常俊, 黎华, 韩英军, 谭智勇, 曹俊诚 2009 物理学报 58 7083]
[15] Kohen S, Williams B S, Hu Q 2005 J. Appl. Phys. 97 053106
[16] Lu X X, Luo H W, Yao R H, Lin Z C 2008 Microelectronics 38 469 (in Chinese) [路香香, 罗宏伟, 姚若河, 林志成 2008 微电子学 38 469]
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