光抽运多层石墨烯太赫兹表面等离子体增益特性的研究

刘亚青; 张玉萍; 张会云; 吕欢欢; 李彤彤; 任广军

doi:10.7498/aps.63.075201

摘要

本文建立了光抽运多层石墨烯表面等离子体模型，计算了光抽运多层石墨烯等离子体传播系数的实部和吸收系数，讨论了动量弛豫时间、温度、层数、准费米能级对表面等离子体传播系数的实部和吸收系数的影响. 研究结果表明，光抽运多层石墨烯使其动态电导率的实部在太赫兹频段内出现负值时，石墨烯表面等离子体实现增益. 通过光抽运剥离层石墨烯和含有底层石墨烯结构表面等离子体传播系数和吸收系数比较，表明光抽运剥离层石墨烯能更有效地实现表面等离子体的增益. 同时，在低温下，光抽运具有合适层数的石墨烯比光抽运单层石墨烯能获得更大的表面等离子体增益.

关键词:

Abstract

Based on the developed optically pumped graphene multilayer terahertz surface plasma structures, this paper calculates the real part of propagation index and amplification coefficient in optically pumped graphene multilayer structures, discusses the inluences of momentum relaxation time, temperature, numbers of grapheme layers, and the quasi-Fermi energy in the topmost grapheme layer on the real part of propagation index and amplification coefficient. It is shown that when the real part of dynamic conductivity becomes negative in the terahertz range of frequencies in the optically pumped graphene multilayer structures, the surface plasma of graphene layers can achieve gain. By comparing the peeling-graphene-structure with the graphene structure that has a high conducting bottom graphene layer in optically pumped scheme, it can be said that the surface plasma of the peeling-graphene-structure can get a high efficient amplification. Meanwhile, the structure having properly numbers of graphene layers can get a larger amplification than the simple graphene structure in an optically pumped scheme at low temperatures.

Keywords:

作者及机构信息

1.
天津理工大学电子信息工程学院, 天津 300384;

2.
山东科技大学电子通信与物理学院, 青岛市太赫兹技术重点实验室, 青岛 266510

基金项目: 国家自然科学基金（批准号：61001018）、山东省自然科学基金（批准号：ZR2011FM009，ZR2012FM011）、山东科技大学杰出青年科学基金（批准号：2010KYJQ103）、山东科技大学科研创新团队支持计划项目（批准号：2012KYTD103）、山东省高等学校科技计划项目（批准号：J11LG20）、青岛市科技计划项目（批准号：11-2-4-4-（8）-jch）、青岛经济技术开发区重点科技计划项目（批准号：2013-1-64）和山东科技大学基金（批准号：YCB120173）资助的课题.

Authors and contacts

1.
College of Electronic Information Engineering, Tianjin University of Technology, Tianjin 300384, China;

2.
Qingdao Key Laboratory of Terahertz Technology, College of Electronic Communication and Physics, Shandong University of Science and Technology, Qingdao 266510, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61001018), the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2011FM009, ZR2012FM011), the Research Fund of Shandong University of Science and Technology (SDUST), China (Grant No. 2010KYJQ103), the SDUST Research Fund (Grant No. 2012KYTD103), the project of Shandong Province Higher Educational Science and Technology Program, China (Grant No. J11LG20), the Qingdao Science & Technology Project, China (Grant No. 11-2-4-4-(8)-jch), the Qingdao Economic & Technical Development Zone Science & Technology Project, China (Grant No. 2013-1-64), and the Shandong University of Science and Technology Foundation, China (Grant No. YCB120173).

参考文献

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[7]	Ryzhii V, Ryzhii M, Satou A 2009 J. Appl. Phys. 106 084507
[8]	Ryzhii V, Ryzhii M, Otsuji T 2008 Phys. Stat. Sol. (c) 5 261
[9]	Zhang Y P, Zhang X, Liu L Y, Zhang H Y, Gao Y, Xu S L, Zhang H Y 2009 Chinese Journal of Lasers 39 0111002 (in Chinese) [张玉萍, 张晓, 刘陵玉, 张洪艳, 高营, 徐世林, 张会云2009 中国激光39 0111002]
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[14]	Ryzhii V, Dubinov A A, Otsuji T, Mitin V, Shur M S 2010 Appl. Phys. 107 054505
[15]	Dubinov A A, Aleshkin V Y, Ryzhii M, Otsuji T, Ryzhii V 2009 Appl. Phys. 2 092301
[16]	Aleshkin V Ya, Dubinov A A, Ryzhii V 2009 JETP Letters 89 63
[17]	Wu S Q, Liu J S, Wang S L, Hu B 2013 Chin. Phys. B 22 104207
[18]	Hanson G W 2008 J. Appl. Phys. 103 064302
[19]	Vafek O 2006 Phys. Rev. Lett. 97 266406
[20]	Falkovsky L A, Varlamov A A 2007 Eur. Phys. J. B 56 281
[21]	Jablan M, Buljan H, Solijacic M 2009 Phys. Rev. B 80 245435
[22]	Watanabe T, Fukushima T, Yabe Y, Boubanga-Tombet S A, Satou A, Dubinov A A, Aleshkin V Ya, Mitin V, Ryzhii V, Otsuji T 2013 New J. Phys. 15 075003
[23]	Dubinov A A, Aleshkin V Ya, Mitin V Otsji T, Ryzhii V 2010 J. Phys. 23 145302
[24]	Vakil A 2011 Science 332 1291
[25]	Chen P Y, Alu A 2011 ACS Nano 5 5855
[26]	Lin C, Tian Z, Xun L, Guoping W 2013 Optics Express 21 28628
[27]	Rana F 2008 IEEE Trans. Nanotechnol. 7 91
[28]	Zhang Y P, Liu L Y, Zhang X, Zhang H Y, Zhang H Y 2012 Journal of Optoelectronics. Laser 23 832 (in Chinese)[张玉萍, 刘陵玉, 张晓, 张洪艳, 张会云2012 光电子激光23 832]
[29]	Satou A, Otsuji T, Ryzhii V 2011 J. Appl. Phys 50 070116
[30]	Satou A, Ryzhii V, Kurita Y, Otsuji T 2013 J. Appl. Phys. 113 143108

施引文献

[1]	Han P Y, Liu W, Xie Y H, Zhang X C 2009 Physics 38 06 (in Chinese) [韩鹏昱, 刘伟, 谢亚红, 张希成2009 物理 38 06]
[2]	Geim A K MacDonald A H 2007 Phys. Today 60 35
[3]	Castro Neto A H Guinea F Peres N M R Novoselov K S Geim A K 2009 Rev. Mod. Phys. 81 109
[4]	Wu H Q, Linghu C Y, Lv H M, Qian H 2013 Chin. Phys. B 22 098106
[5]	Rzhii V, Rzhii M, Otsuji T 2007 J. Appl. Phys. 101 083114
[6]	Satou A, Vasko F T, Ryzhii V 2008 Phys. Rev. B 78 115431
[7]	Ryzhii V, Ryzhii M, Satou A 2009 J. Appl. Phys. 106 084507
[8]	Ryzhii V, Ryzhii M, Otsuji T 2008 Phys. Stat. Sol. (c) 5 261
[9]	Zhang Y P, Zhang X, Liu L Y, Zhang H Y, Gao Y, Xu S L, Zhang H Y 2009 Chinese Journal of Lasers 39 0111002 (in Chinese) [张玉萍, 张晓, 刘陵玉, 张洪艳, 高营, 徐世林, 张会云2009 中国激光39 0111002]
[10]	Ryzhii V, Ryzhii M, Mitin V, Otsuji T 2011 J. Appl. Phys. 110 094503
[11]	Ryzhii M, Ryzhii V 2007 J. Appl. Phys. 46 08151
[12]	Zhang Y P, Zhang H Y, Yin Y H, Liu L Y, Zhang X, Gao Y, Zhang H Y 2012 Acta Phys. Sin. 61 047803 (in Chinese)[张玉萍, 张洪艳, 尹贻恒, 刘陵玉, 张晓, 高营, 张会云2012 物理学报61 047803]
[13]	Zhang Y P, Liu L Y, Chen Q, Feng Z H, Wang J L, Zhang X, Zhang H Y, Zhang H Y 2013 Acta Phys. Sin. 62 097202 (in Chinese)[张玉萍, 刘陵玉, 陈琦, 冯志红, 张晓, 张洪艳, 张会云2013 物理学报62 097202]
[14]	Ryzhii V, Dubinov A A, Otsuji T, Mitin V, Shur M S 2010 Appl. Phys. 107 054505
[15]	Dubinov A A, Aleshkin V Y, Ryzhii M, Otsuji T, Ryzhii V 2009 Appl. Phys. 2 092301
[16]	Aleshkin V Ya, Dubinov A A, Ryzhii V 2009 JETP Letters 89 63
[17]	Wu S Q, Liu J S, Wang S L, Hu B 2013 Chin. Phys. B 22 104207
[18]	Hanson G W 2008 J. Appl. Phys. 103 064302
[19]	Vafek O 2006 Phys. Rev. Lett. 97 266406
[20]	Falkovsky L A, Varlamov A A 2007 Eur. Phys. J. B 56 281
[21]	Jablan M, Buljan H, Solijacic M 2009 Phys. Rev. B 80 245435
[22]	Watanabe T, Fukushima T, Yabe Y, Boubanga-Tombet S A, Satou A, Dubinov A A, Aleshkin V Ya, Mitin V, Ryzhii V, Otsuji T 2013 New J. Phys. 15 075003
[23]	Dubinov A A, Aleshkin V Ya, Mitin V Otsji T, Ryzhii V 2010 J. Phys. 23 145302
[24]	Vakil A 2011 Science 332 1291
[25]	Chen P Y, Alu A 2011 ACS Nano 5 5855
[26]	Lin C, Tian Z, Xun L, Guoping W 2013 Optics Express 21 28628
[27]	Rana F 2008 IEEE Trans. Nanotechnol. 7 91
[28]	Zhang Y P, Liu L Y, Zhang X, Zhang H Y, Zhang H Y 2012 Journal of Optoelectronics. Laser 23 832 (in Chinese)[张玉萍, 刘陵玉, 张晓, 张洪艳, 张会云2012 光电子激光23 832]
[29]	Satou A, Otsuji T, Ryzhii V 2011 J. Appl. Phys 50 070116
[30]	Satou A, Ryzhii V, Kurita Y, Otsuji T 2013 J. Appl. Phys. 113 143108

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