基于石墨烯的太赫兹器件研究进展

冯伟; 张戎; 曹俊诚

doi:10.7498/aps.64.229501

摘要

石墨烯是一种零带隙二维的半导体材料, 具有极高的载流子迁移率, 优异的机械、电学、热学和光学等性能. 在太赫兹辐射源、调制器和探测器件的研究中, 石墨烯材料具有独特的优势. 本文以石墨烯材料在太赫兹辐射源、调制器以及探测器等器件方面的应用为主, 综述了石墨烯太赫兹器件的最新研究进展.

关键词:

Graphene has unique electronic properties stemming from a linear gapless carrier energy spectrum, and has dominant advantages in the research of devices such as lasers, detectors and modulators in terahertz region due to its tunable energy gap and extremely high carrier mobility. In this review, we summarize its latest progress in applications of terahertz devices such as lasers, detectors and modulators. Terahertz lasers based on graphene can reach a gain as high as 104 cm-1, and terahertz detectors with different structures such as a bilayer graphene field-effect transistor with top gate and buried gate can achieve NEP (noise equivalent power) ～ m nW/Hz. Graphene terahertz modulators, which are equipped with transmission configuration and reflection configuration, can have a very high modulation depth. These results may be helpful for developing the high-efficiency graphene terahertz devices.

Keywords:

作者及机构信息

1.
江苏大学理学院物理系, 镇江 212013;

2.
中国科学院上海微系统与信息技术研究所, 中国科学院太赫兹固态技术重点实验室, 上海 200050

通信作者: 曹俊诚, jccao@mail.sim.ac.cn

基金项目: 国家重点基础研究发展计划(批准号: 2014CB339803)、国家自然科学基金(批准号: 61131006, 61321492, 61306066)、国家重大科学仪器设备开发专项(批准号: 2011YQ150021)、国家科技重大专项(批准号: 2011ZX02707)、中国科学院重要方向项目(批准号:YYYJ-1123-1)、中国科学院创新团队国际合作伙伴计划: 高迁移率材料工程创新团队项目和上海市科学技术委员会(批准号:14530711300, 13ZR1464600)资助的课题.

Authors and contacts

1.
Department of Physics, Faculty of Science, Jiangsu University, Zhenjiang 212013, China;

2.
Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China

Corresponding author: Cao Jun-Cheng, jccao@mail.sim.ac.cn

Funds: Project supported by the National Basic Research Program of China (Grant No. 2014CB339803), the National Natural Science Foundation of China (Grant Nos. 61131006, 61321492, 61306066), the National Key Scientific Instrument and Equipment Development Project, China (Grant No. 2011YQ150021), the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02707), the Major Project of the Chinese Academy of Sciences (Grant No. YYYJ-1123-1), the International Collaboration and Innovation Program on High Mobility Materials Engineering of the Chinese Academy of Sciences, and the Shanghai Municipal Commission of Science and Technology, China (Grant Nos. 14530711300,13ZR1464600).

参考文献

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[39]	Wen Q Y, Tian W, Mao Q, Chen Z, Liu W W, Yang Q H, Sanderson M, Zhang H W 2014 Sci. Rep. 4 7409

施引文献

[1]	Ferguson B, Zhang X C 2003 Physics 32 286 (in Chinese) [Ferguson B, 张希成 2003 物理 32 286]
[2]	Cao J C 2003 J. Funct. Mater. Dev. 9 111 (in Chinese) [曹俊诚 2003 功能材料与器件学报 9 111]
[3]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[4]	Bolotin K I, Sikes K J, Jiang Z, Klima M, Fudenberg G, Hone J, Kim P, Stormer H L 2008 Solid State Commun. 146 351
[5]	Li S J, Gan S, Mu H R, Xu Q Y, Qiao H, Li P F, Xue Y Z, Bao Q L 2014 New Carbon Mater. 29 329 (in Chinese) [李绍娟, 甘胜, 沐浩然, 徐庆阳, 乔虹, 李鹏飞, 薛运周, 鲍桥梁 2014 新型炭材料 29 329]
[6]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V, Firsov A A 2005 Nature 438 197
[7]	Cao J C 2012 Semiconductor Terahertz Sources, Detectors and Applications (1st Ed.) (Beijing: Science Press) p1 (in Chinese) [曹俊诚 2012 半导体太赫兹源、探测器与应用(第一版)(北京: 科学出版社) 第1页]
[8]	Bao Q L, Zhang H, Wang Y, Ni Z H, Yan Y L, Shen Z X, Loh K P, Tang D 2009 Adv. Funct. Mater. 19 3077
[9]	Ryzhii V, Ryzhii M, Otsuji T 2007 J. Appl. Phys. 101 083114
[10]	Satou A, Vasko F T, Ryzhii V 2008 Phys. Rev. B 78 115431
[11]	Ryzhii V, Ryzhii M, Satou A 2009 J. Appl. Phys. 106 084507
[12]	Ryzhii V, Ryzhii M, Otsuji T 2008 Phys. Stat. Sol. 5 261
[13]	Karasawa H, Komori T, Watanabe T, Satou A, Fukidome H, Suemitsu M, Ryzhii V, Otsuji T 2011 J. Infrared Millim. Terahertz Waves 32 655
[14]	Ryzhi V, Ryzhi M, Otsuji T 2011 Appl. Phys. Lett. 99 173504
[15]	Ryzhi V, Ryzhi M, Mitin V, Satou A, Otsuji T 2011 Jpn. J. Appl. Phys. 50 094001
[16]	Boubanga-Tombet S, Chan S, Watanabe T, Satou A, Ryzhii V, Otsuji T 2012 Phys. Rev. B 85 035443
[17]	Watanabe T, Fukushima T, Yabe Y, Boubanga Tombet S A, Satou A, Dubinov A A, Aleshkin V Ya, Mitin V, Ryzhii V, Otsuji T 2013 New J. Phys. 15 075003
[18]	Ryzhii V, Dubinov A A, Aleshkin V Ya, Ryzhi M, Otsuji T 2013 Appl. Phys. Lett. 103 163507
[19]	Popov V V, Polischuk O V, Davoyan A R, Ryzhii V, Ostuji T, Shur M S 2012 Phys. Rev. B 86 195437
[20]	Ryzhii V, Mitin V, Ryzhii M, Ryabova N, Otsuji T 2008 Appl. Phys. Express 1 063002
[21]	Ryzhii V, Ryzhii M, Ryabova N, Mitin V, Otsuji T 2009 Jpn. J. Appl. Phys. 48 04C144
[22]	Wright A R, Cao J C, Zhang C 2009 Phys. Rev. Lett. 103 207401
[23]	Xia F N, Mueller T, Lin Y M, Valdes-Garcia A, Avouris P 2009 Nat. Nanotechnol. 4 839
[24]	Ryzhii M, Otsuji T, Mitin V, Ryzhii V 2011 Jpn. J. Appl. Phys. 50 070117
[25]	Chen J, Badioli M, Alonso-Gonzlez P, Thongrattanasiri S, Huth F, Osmond J, Spasenović M, Centeno A, Pesquera A, Godignon P, Elorza A Z, Camara N, Garca de Abajo F J, Hillenbrand R, Koppens F H 2012 Nature 487 77
[26]	Fei Z, Rodin A S, Andreev G O, Bao W, McLeod A S, Wagner M, Zhang L M, Zhao Z, Thiemens M, Dominguez G, Fogler M M, Castro Neto A H, Lau C N, Keilmann F, Basov D N 2012 Nature 487 82
[27]	Vicarelli L, Vitiello M S, Coquillat D, Lombardo A, Ferrari A C, Knap W, Polini M, Pellegrini V, Tredicucci A 2012 Nature Mater. 11 865
[28]	Mittendorff M, Winnerl S, Kamann J, Eroms J, Weiss D, Schneider H, Helm M 2013 Appl. Phys. Lett. 103 021113
[29]	Muraviev A V, Rumyantsev S L, Liu G, Balandin A A, Knap W, Shur M S 2013 Appl. Phys. Lett. 103 181114
[30]	Zak A, Andersson M A, Bauer M, Matukas J, Lisauskas A, Roskos H G, Stake J 2014 Nano Lett. 14 5834
[31]	Spirito D, Coquillat D, Bonis S L, Lombardo A, Bruna M, Ferrari A C, Pellegrini V, Tredicucci A, Knap W, Vitiello M S 2014 Appl. Phys. Lett. 104 061111
[32]	Dawlaty J M, Shivaraman S, Strait J, George P, Chandrashekhar M, Rana F, Spencer M G, Veksler D, Chen Y 2008 Appl. Phys. Lett. 93 131905
[33]	Choi H, Borondics F, Siegel D A, Zhou S Y, Martin M C, Lanzara A, Kaindl R A 2009 Appl. Phys. Lett. 94 172102
[34]	Liu M, Yin X, UlinAvila E, Geng B, Zentgraf T, Ju L, Wang F, Zhang X 2011 Nature 474 64
[35]	Sensale-Rodriguez B, Yan R, Kelly M M, Fang T, Tahy K, Hwang W S, Jena D, Liu L, Xing H G 2012 Nat. Commun. 3 780
[36]	Sensale-Rodriguez B, Yan R, Rafique S, Zhu M, Li W, Liang X, Gundlach D, Protasenko V, Kelly M M, Jena D, Liu L, Xing H G 2012 Nano Lett. 12 4518
[37]	Sensale-Rodriguez B, Yan R, Zhu M, Jena D, Liu L, Xing H G 2012 Appl. Phys. Lett. 101 261115
[38]	Weis P, Garcia-Pomar J L, Hh M, Reinhard B, Brodyanski A, Rahm M 2012 ACS Nano 6 9118
[39]	Wen Q Y, Tian W, Mao Q, Chen Z, Liu W W, Yang Q H, Sanderson M, Zhang H W 2014 Sci. Rep. 4 7409

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