硅纳米线阵列光电探测器研究进展

刘晓轩; 孙飞扬; 吴颖; 杨盛谊; 邹炳锁

doi:10.7498/aps.72.20222303

摘要

硅(Si)作为最重要的半导体材料之一, 被广泛应用于太阳电池、光电探测器等光电器件中. 由于硅和空气之间的折射率差异, 大量的入射光在硅基表面即被反射. 为了抑制这种反射带来的损失, 多种具有强陷光效应的硅纳米结构被研发出来. 采用干法蚀刻方案多数存在成本高昂、制备复杂的问题, 而湿法蚀刻方案所制备的硅纳米线阵列则存在间距等参数可控性较低、异质结有效面积较小等问题. 聚苯乙烯微球掩膜法可结合干法及湿法蚀刻各自的优点, 容易得到周期性硅纳米线(柱)阵列. 本文首先概述了硅纳米线结构的性质和制备方法, 总结了有效提升硅纳米线(柱)阵列光电探测器性能的策略, 并分析了其中存在的问题. 进而, 讨论了基于硅纳米线(柱)阵列光电探测器的最新进展, 重点关注其结构、光敏层的形貌以及提高光电探测器性能参数的方法. 最后, 简要介绍了其存在的主要问题及可能的解决方案.

关键词:

Abstract

As one of the most important semiconductor materials, silicon (Si) is widely used in optoelectronic devices such as solar cells and photodetectors. Owing to the difference in refractive index between silicon and air, a large amount of incident light is reflected back into the air from the silicon surface. In order to suppress the loss caused by this reflection, a variety of silicon nanostructures with strong trapping effect have been developed. Most of the dry-etching schemes encounter the problems of high cost and complex preparation, while the silicon nanowires array prepared by the wet-etching schemes has the problems of low controllability of some parameters such as the spacing between two adjacent nanowires, and the small effective area of heterojunction. The method of using polystyrene microsphere as the mask can integrate the advantages of dry-etching method and wet-etching method, and it is easy to obtain periodic silicon nanowires (pillars) array. In this paper, first, we summarize the properties and preparation methods for silicon nanowires structure, the strategies to effectively improve the performance of silicon nanowires (pillars) array photodetectors, Then we analyze the existing problems. Further, the latest developments of silicon nanowires (pillars) array photodetector are discussed, and the structure, morphology of photosensitive layer and methods to improve the performance parameters of silicon nanowires (pillars) array photodetector are analyzed. Among them, we focus on the ultraviolet light sensitive silicon based photodetector and its method to show tunable and selective resonance absorption through leaky mode resonance, the silicon nanowires array photodetector modified with metal nanoparticles and the method of improving performance through surface plasmon effect, and plasmon hot electrons. Heterojunction photodetectors composed of various low-dimensional materials and silicon nanowires (pillars) array, and methods to improve the collection efficiency of photogenerated charge carriers through the “core/shell” structure, methods to expand the detection band range of silicon-based photodetectors by integrating down-conversion light-emitting materials and silicon nanowires (pillars) array, flexible silicon nanowires array photodetectors and their various preparation methods, are all introduced. Then, the main problems that a large number of defect states will be generated on the silicon nanostructure surface in the MACE process are briefly introduced, and several possible solutions for defect passivation are also presented. Finally, the future development for silicon nanowires (pillars) array photodetectors is prospected.

Keywords:

作者及机构信息

1.
北京理工大学物理学院, 纳米光子学与超精密光电系统北京市重点实验室, 北京　100081

2.
广西大学资源环境与材料学院, 南宁　530004

通信作者: 杨盛谊, syyang@bit.edu.cn

基金项目: 国家重点研发计划(批准号: SQ2019YFB220038)、国家自然科学基金(批准号: 1227041254)、中央高校基本科研业务费(批准号: 020CX02002, BITBLR2020013)和广西大学“省部共建特色金属材料与组合结构全寿命安全国家重点实验室”开放基金(批准号: 2021GXYSOF18)资助的课题.

Authors and contacts

1.
Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China

2.
College of Resources, Environment and Materials, Guangxi University, Nanning 530004, China

Corresponding author: Yang Sheng-Yi, syyang@bit.edu.cn

Funds: Project supported by the National Key RD Program of China (Grant No. SQ2019YFB220038), the National Natural Science Foundation of China (Grant No. 1227041254), the Fundamental Research Fund for the Central Universities, China (Grant Nos. 020CX02002, BITBLR2020013), and the Opening Fund of the “State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures” at Guangxi University, China (Grant No. 2021GXYSOF18).

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施引文献

图 1 金属辅助硅蚀刻的微观解释^[19]

Fig. 1. Microscopic interpretation of metal-assisted chemical etching^[19] .

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图 2 硅纳米柱阵列的蚀刻流程 (a)和蚀刻好的Si-NPs阵列示意图(b)^[38]

Fig. 2. Etching process for Si-NPs array (a) and the schematic diagram of etched Si-NPs array (b)^[38] .

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图 3 在光照射下, 硅光敏层中产生光生载流子的原理示意图

Fig. 3. Schematic diagram for photogenerated carriers in silicon photosensitive layer under illumination.

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图 4 紫外光敏感的硅基光电探测器件的光响应与波长的关系曲线^[59]

Fig. 4. Characteristics of responsivity vs. incident wavelength for the silicon-based photodetector which is sensitive to ultraviolet light^[59].

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图 5 以硅纳米线为有源层的MSM紫外光电探测器结构示意图 (a)及其响应率与波长的关系曲线(b)^[17]

Fig. 5. (a) Schematic diagram for MSM ultraviolet photodetector with silicon nanowires as the active layer and (b) the curve for its responsivity vs. the incident wavelength^[17].

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图 6 垂直Si-NW阵列尖端互连的p-n结光电探测器^[66]

Fig. 6. The p-n junction photodetector interconnected at the tips of vertical Si-NW array^[66].

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图 7 基于MoS₂/Ag-NP/Si-NW异质结的无栅极光电探测器结构示意图(a)及其响应率与入射光功率密度的关系(b)^[68]

Fig. 7. (a) Schematic diagram of gate-free photodetector based on MoS₂/Ag-NP/Si-NW heterostructure and (b) the characteristics of its responsivity vs. incident light power density^[68].

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图 8 Si-NW/N-GQD异质结构器件的光生载流子产生机制及传输机理示意图^[70]

Fig. 8. Schematic diagram of photogenerated carriers generation mechanism and their transmission mechanism for Si-NW/N-GQD heterojunction devices^[70].

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图 9 Si-NW/Cs₃Cu₂I₅ 纳米晶异质结光电探测器^[72]

Fig. 9. Photodetector based on Si-NW/Cs₃Cu₂I₅ nanocrystalline heterojunction^[72].

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图 10 Si-NW/钙钛矿异质结光电探测器制备流程 (a)及器件结构(b)、能级图(c)和叉指状沟道的SEM照片(d)^[81]

Fig. 10. Preparation process (a) and device configuration (b), energy level diagram (c) and SEM photo of the interdigital channels (d) for the Si-NW/perovskite heterojunction photodetector^[81].

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图 11 高性能Si-NTCA/石墨烯光电探测器结构示意图^[82]

Fig. 11. Schematic diagram of high-performance Si-NTCA/graphene photodetector^[82].

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图 12 n-Bi₂Se₃/p-SiNWs光电探测器在探测波长范围内的响应率和探测率^[15]

Fig. 12. Responsivity and detectivity of n-Bi₂Se₃/p-SiNWs photodetector in the detection wavelength range^[15].

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图 13 高质量“共形”Si-NW/MoS₂异质结光电探测器的制备流程^[83]

Fig. 13. Preparation process for high-quality “conformal” Si-NW/MoS₂ heterojunction photodetector^[83].

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图 14 柔性硅基光电探测器的制备原理示意图^[89]

Fig. 14. Schematic diagram of the preparation principle for flexible silicon-based photodetectors^[89].

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