基于扫描热探针技术的二维材料物性调控研究进展

赵世杰; 马浩南; 刘霞

doi:10.7498/aps.74.20241590

摘要

随着微观领域探索的不断深入, 以光刻和各类刻蚀工艺为代表的微纳加工技术已被广泛应用于微米及纳米尺度的结构与器件制造, 推动了集成电路、微纳光电器件、微机电系统等领域的不断革新. 这不仅带动了设备性能的提升, 还为微观物性调控机制的基础科学研究带来了新的机遇. 近年来, 作为一种新兴的微纳加工技术, 扫描热探针技术在二维材料加工、物性调控和纳米级灰度结构制造方面获得了实践应用, 并展现出独特优势. 本文将从扫描热探针技术的原理及特点出发, 分析其在二维材料微纳加工及物性调控领域的最新研究进展, 最后展望该技术的广阔应用前景.

关键词:

Abstract

With the continuous development of micro-scale exploration, micro/nano fabrication technologies, represented by photolithography and various etching processes, have been widely used for fabricating micro- and nanoscale structures and devices. These developments have driven innovation in fields such as integrated circuits, micro-nano optoelectronic devices, and micro-electromechanical systems, while also bringing new opportunities to fundamental scientific research, including the study of microscopic property regulation mechanisms. In recent years, as an emerging micro-nano fabrication technology, thermal scanning probe lithography (t-SPL) has shown promise and unique advantages in applications related to the fabrication and property regulation of two-dimensional materials, as well as the creation of nanoscale grayscale structures. By employing the fabrication methods such as material removal and modification, t-SPL can be used as an advanced technology for regulating two-dimensional material properties, or directly effectively regulating various properties of two-dimensional materials, thereby significantly improving the performance of two-dimensional material devices, or advancing fundamental scientific research on the micro/nano scale. This paper starts with the principles and characteristics of t-SPL, analyzes the recent research progress of the micro-nano fabrication and property modulation of two-dimensional materials, including several researches achieved by using t-SPL as the core fabrication methods, such as direct patterning, strain engineering, and reaction kinetics research of two-dimensional materials. Finally, the challenges in t-SPL technology are summarized, the corresponding possible solutions are proposed, and the promising applications of this technology are explored.

Keywords:

作者及机构信息

北京理工大学集成电路与电子学院, 北京　100081

通信作者: 刘霞, xia.liu@bit.edu.cn

基金项目: 国家重点研发计划(批准号: 2023YFB3405600)和国家自然科学基金(批准号: 62274013)资助的课题.

Authors and contacts

School of Integrated Circuit and Electronics, Beijing Institute of Technology, Beijing 100081, China

Corresponding author: LIU Xia, xia.liu@bit.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2023YFB3405600) and the National Natural Science Foundation of China (Grant No. 62274013).

文章全文 : translate this paragraph

参考文献

[1]	Mamin H J, Rugar D 1992 Appl. Phys. Lett. 61 1003 Google Scholar
[2]	Vettiger P, Cross G, Despont M, Drechsler U, Durig U, Gotsmann B, Haberle W, Lantz M A, Rothuizen H E, Stutz R, Binnig G K 2002 IEEE Trans. Nanotechnol. 1 39 Google Scholar
[3]	Howell S T, Grushina A, Holzner F, Brugger J 2020 Microsyst. Nanoeng. 6 21 Google Scholar
[4]	Paul P C, Knoll A W, Holzner F, Despont M, Duerig U 2011 Nanotechnology 22 275306 Google Scholar
[5]	Lloyd D, Liu X H, Christophe J W, Cantley L, Wadehra A, Kim B L, Goldberg B B, Swan A K, Bunch J S 2016 Nano Lett. 16 5836 Google Scholar
[6]	Palacios-Berraquero C, Kara D M, Montblanch A R P, Barbone M, Latawiec P, Yoon D, Ott A K, Loncar M, Ferrari A C, Atatüre M 2017 Nat. Commun. 8 15093 Google Scholar
[7]	Meyer J C, Eder F, Kurasch S, Skakalova V, Kotakoski J, Park H J, Roth S, Chuvilin A, Eyhusen S, Benner G, Krasheninnikov A V, Kaiser U 2012 Phys. Rev. Lett. 108 196102 Google Scholar
[8]	Park J B, Yoo J H, Grigoropoulos C P 2012 Appl. Phys. Lett. 101 043110 Google Scholar
[9]	Liu X, Howell S T, Conde-Rubio A, Boero G, Brugger J 2020 Adv. Mater. 32 2001232 Google Scholar
[10]	Dai Z H, Liu L Q, Zhang Z 2019 Adv. Mater. 31 1805417 Google Scholar
[11]	Liu X, Sachan A K, Howell S T, Conde-Rubio A, Knoll A W, Boero G, Zenobi R, Brugger J 2020 Nano Lett. 20 8250 Google Scholar
[12]	Kirchner R, Guzenko V A, Schift H 2019 Adv. Opt. Technol. 8 175 Google Scholar
[13]	Erbas B, Conde-Rubio A, Liu X, Pernollet J, Wang Z Y, Bertsch A, Penedo M, Fantner G, Banerjee M, Kis A, Boero G, Brugger J 2024 Microsyst. Nanoeng. 10 28 Google Scholar
[14]	Liu X, Erbas B, Conde-Rubio A, Rivano N, Wang Z, Jiang J, Bienz S, Kumar N, Sohier T, Penedo M, Banerjee M, Fantner G, Zenobi R, Marzari N, Kis A, Boero G, Brugger J 2024 Nat. Commun. 15 6934 Google Scholar
[15]	Wei Z Q, Wang D B, Kim S, Kim S Y, Hu Y K, Yakes M K, Laracuente A R, Dai Z T, Marder S R, Berger C, King W P, de Heer W A, Sheehan P E, Riedo E 2010 Science 328 1373 Google Scholar
[16]	Carroll K M, Lu X, Kim S, Gao Y, Kim H J, Somnath S, Polloni L, Sordan R, King W P, Curtis J E, Riedo E 2014 Nanoscale 6 1299 Google Scholar
[17]	Raghuraman S, Elinski M B, Batteas J D, Felts J R 2017 Nano Lett. 17 2111 Google Scholar
[18]	Zheng X R, Calò A, Cao T F, Liu X Y, Huang Z J, Das P M, Drndic M, Albisetti E, Lavini F, Li T D, Narang V, King W P, Harrold J W, Vittadello M, Aruta C, Shahrjerdi D, Riedo E 2020 Nat. Commun. 11 3463 Google Scholar
[19]	Lassaline N, Thureja D, Petter D, Murthy P A, Knoll A W, Norris D J 2021 ACS Nano Lett. 21 8175 Google Scholar
[20]	Cheng G, Wang Z, Man Z, Chen M, Bian J, Lu Z, Zhang W 2022 ACS Appl. Nano Mater. 5 5756 Google Scholar
[21]	Wu H, Wang Y, Yu J, Pan J, Cho H, Gupta A, Goropceanu I, Zhou C, Park J, Talapin D V 2022 J. Am. Chem. Soc. 144 10495 Google Scholar
[22]	Rostami M, Markovic A, Wang Y, Pernollet J, Zhang X S, Liu X, Brugger J 2024 Adv. Sci. 11 2303518 Google Scholar
[23]	Feng J, Qian X F, Huang C W, Li J 2012 Nat. Photonics 6 866 Google Scholar
[24]	Ren H T, Zhang L, Xiang G 2020 Appl. Phys. Lett. 116 012401 Google Scholar
[25]	Bai K K, Zhou Y, Zheng H, Meng L, Peng H L, Liu Z F, Nie J C, He L 2014 Phys. Rev. Lett. 113 086102 Google Scholar

施引文献

图 1 t-SPL加工方式原理图

Fig. 1. Schematic diagram of t-SPL manufacturing method.

下载: 全尺寸图片幻灯片

图 2 t-SPL在纳米尺度上切割二维材料示意图^[9]

Fig. 2. Schematic illustration of t-SPL cutting 2D materials at the nanoscale^[9].

下载: 全尺寸图片幻灯片

图 3 t-SPL在二维材料表面产生纳米压痕示意图^[11]

Fig. 3. Schematic illustration of the generation of nanoscale indentations on the surface of 2D materials by t-SPL^[11].

下载: 全尺寸图片幻灯片

图 4 基于灰度结构衬底的MoS₂晶体管结构示意图^[14]

Fig. 4. Schematic illustration of MoS₂ transistor structure based on gray-scale structural substrate^[14].

下载: 全尺寸图片幻灯片

表 1 t-SPL工艺相关研究的领域及应用

Table 1. Research fields and applications related to t-SPL technology.

t-SPL工艺类型	参考文献	领域	应用
减材	[1]	微纳加工	激光加热探针的早期纳米压痕研究
减材	[2]	微纳加工	IBM千足虫计划, t-SPL工艺雏形
减材	[4]	微纳加工	高速刻写工艺, t-SPL刻写速度优化
减材	[9]	微纳加工	使用t-SPL直接对二维材料进行图案化
减材	[13]	微纳加工	t-SPL制造灰度结构并转移至硅衬底
减材	[14]	应变工程	利用灰度结构衬底实现二维材料应变工程, 提升器件性能
减材	[19]	纳米光学与光子学	基于 hBN 的高分辨率灰度光学微结构
减材	[20]	量子点调控	纳米孔量子点定位, 亚纳米量子位设计
减材	[22]	微纳加工	大面积热敏抗蚀剂的快速图案化
改性	[15]	表面化学与电子学	氧化石墨烯还原反应, 生成导电图案
改性	[16]	表面化学	氧化石墨烯的导电纳米线制造
改性	[17]	反应动力学	热化学反应研究, 摩擦系数调控
改性	[18]	缺陷工程	二维材料掺杂(p型、n型), 图案化缺陷引入
其他	[11]	应变工程	利用t-SPL纳米压痕调控二维材料物性

下载: 导出CSV

[1]	Mamin H J, Rugar D 1992 Appl. Phys. Lett. 61 1003 Google Scholar
[2]	Vettiger P, Cross G, Despont M, Drechsler U, Durig U, Gotsmann B, Haberle W, Lantz M A, Rothuizen H E, Stutz R, Binnig G K 2002 IEEE Trans. Nanotechnol. 1 39 Google Scholar
[3]	Howell S T, Grushina A, Holzner F, Brugger J 2020 Microsyst. Nanoeng. 6 21 Google Scholar
[4]	Paul P C, Knoll A W, Holzner F, Despont M, Duerig U 2011 Nanotechnology 22 275306 Google Scholar
[5]	Lloyd D, Liu X H, Christophe J W, Cantley L, Wadehra A, Kim B L, Goldberg B B, Swan A K, Bunch J S 2016 Nano Lett. 16 5836 Google Scholar
[6]	Palacios-Berraquero C, Kara D M, Montblanch A R P, Barbone M, Latawiec P, Yoon D, Ott A K, Loncar M, Ferrari A C, Atatüre M 2017 Nat. Commun. 8 15093 Google Scholar
[7]	Meyer J C, Eder F, Kurasch S, Skakalova V, Kotakoski J, Park H J, Roth S, Chuvilin A, Eyhusen S, Benner G, Krasheninnikov A V, Kaiser U 2012 Phys. Rev. Lett. 108 196102 Google Scholar
[8]	Park J B, Yoo J H, Grigoropoulos C P 2012 Appl. Phys. Lett. 101 043110 Google Scholar
[9]	Liu X, Howell S T, Conde-Rubio A, Boero G, Brugger J 2020 Adv. Mater. 32 2001232 Google Scholar
[10]	Dai Z H, Liu L Q, Zhang Z 2019 Adv. Mater. 31 1805417 Google Scholar
[11]	Liu X, Sachan A K, Howell S T, Conde-Rubio A, Knoll A W, Boero G, Zenobi R, Brugger J 2020 Nano Lett. 20 8250 Google Scholar
[12]	Kirchner R, Guzenko V A, Schift H 2019 Adv. Opt. Technol. 8 175 Google Scholar
[13]	Erbas B, Conde-Rubio A, Liu X, Pernollet J, Wang Z Y, Bertsch A, Penedo M, Fantner G, Banerjee M, Kis A, Boero G, Brugger J 2024 Microsyst. Nanoeng. 10 28 Google Scholar
[14]	Liu X, Erbas B, Conde-Rubio A, Rivano N, Wang Z, Jiang J, Bienz S, Kumar N, Sohier T, Penedo M, Banerjee M, Fantner G, Zenobi R, Marzari N, Kis A, Boero G, Brugger J 2024 Nat. Commun. 15 6934 Google Scholar
[15]	Wei Z Q, Wang D B, Kim S, Kim S Y, Hu Y K, Yakes M K, Laracuente A R, Dai Z T, Marder S R, Berger C, King W P, de Heer W A, Sheehan P E, Riedo E 2010 Science 328 1373 Google Scholar
[16]	Carroll K M, Lu X, Kim S, Gao Y, Kim H J, Somnath S, Polloni L, Sordan R, King W P, Curtis J E, Riedo E 2014 Nanoscale 6 1299 Google Scholar
[17]	Raghuraman S, Elinski M B, Batteas J D, Felts J R 2017 Nano Lett. 17 2111 Google Scholar
[18]	Zheng X R, Calò A, Cao T F, Liu X Y, Huang Z J, Das P M, Drndic M, Albisetti E, Lavini F, Li T D, Narang V, King W P, Harrold J W, Vittadello M, Aruta C, Shahrjerdi D, Riedo E 2020 Nat. Commun. 11 3463 Google Scholar
[19]	Lassaline N, Thureja D, Petter D, Murthy P A, Knoll A W, Norris D J 2021 ACS Nano Lett. 21 8175 Google Scholar
[20]	Cheng G, Wang Z, Man Z, Chen M, Bian J, Lu Z, Zhang W 2022 ACS Appl. Nano Mater. 5 5756 Google Scholar
[21]	Wu H, Wang Y, Yu J, Pan J, Cho H, Gupta A, Goropceanu I, Zhou C, Park J, Talapin D V 2022 J. Am. Chem. Soc. 144 10495 Google Scholar
[22]	Rostami M, Markovic A, Wang Y, Pernollet J, Zhang X S, Liu X, Brugger J 2024 Adv. Sci. 11 2303518 Google Scholar
[23]	Feng J, Qian X F, Huang C W, Li J 2012 Nat. Photonics 6 866 Google Scholar
[24]	Ren H T, Zhang L, Xiang G 2020 Appl. Phys. Lett. 116 012401 Google Scholar
[25]	Bai K K, Zhou Y, Zheng H, Meng L, Peng H L, Liu Z F, Nie J C, He L 2014 Phys. Rev. Lett. 113 086102 Google Scholar

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