| [1] |
Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica,
2020, 69(10): 102901.
doi: 10.7498/aps.69.20200029
|
| [2] |
Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin. Raman investigation of ion-implanted ZnO films. Acta Physica Sinica,
2010, 59(7): 4831-4836.
doi: 10.7498/aps.59.4831
|
| [3] |
Zhang Da-Cheng, Shen Yan-Yan, Huang Yuan-Jie, Wang Zhuo, Liu Chang-Long. Theoretical study of nanoparticles in insulators fabricated by metal ion implantation. Acta Physica Sinica,
2010, 59(11): 7974-7978.
doi: 10.7498/aps.59.7974
|
| [4] |
Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng. A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica,
2008, 57(8): 5165-5169.
doi: 10.7498/aps.57.5165
|
| [5] |
Hao Xiao-Peng, Wang Bao-Yi, Yu Run-Sheng, Wei Long. Zirconium-ion implantation of zircaloy-4 investiged by slow positron beam. Acta Physica Sinica,
2007, 56(11): 6543-6546.
doi: 10.7498/aps.56.6543
|
| [6] |
Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica,
2006, 55(10): 5487-5493.
doi: 10.7498/aps.55.5487
|
| [7] |
Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica,
2006, 55(8): 4353-4357.
doi: 10.7498/aps.55.4353
|
| [8] |
Zhang Xiao-Dan, Zhao Ying, Zhu Feng, Wei Chang-Chun, Mai Yao-Hua, Gao Yan-Tao, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen. Secondary ion mass spectroscopic depth profile analysis of oxygen contamination in hydrogenated microcrystalline silicon. Acta Physica Sinica,
2005, 54(4): 1895-1898.
doi: 10.7498/aps.54.1895
|
| [9] |
Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng. . Acta Physica Sinica,
2002, 51(3): 629-634.
doi: 10.7498/aps.51.629
|
| [10] |
ZOU YUN-JUAN, YAN HUI, CHEN GUANG-HUA, JIN YUN-FAN, YANG RU. ION RADIATION DAMAGE OF C60 FILMS. Acta Physica Sinica,
1998, 47(11): 1923-1927.
doi: 10.7498/aps.47.1923
|
| [11] |
TIAN REN-HE, ZHANG XIAO-JI, WU YU-GUANG, ZHANG HUI-XING. EFFECTS OF SELF-ION IRRADIATION ON SECONDARY DEFECTS IN MeV P+-IMPLANTED Si. Acta Physica Sinica,
1998, 47(6): 952-959.
doi: 10.7498/aps.47.952
|
| [12] |
LIU JIA-LU, ZHANG TING-QING, LI JIAN-JUN, ZHAO YUAN-FU. SIMS ANALYSIS OF MIGRATION CHARACTERISTICS OF FLUORINE IN BF2+ IMPLANTED POLY-Si GATE UNDER CONVENTIONAL THERMAL ANNEALING. Acta Physica Sinica,
1997, 46(8): 1580-1584.
doi: 10.7498/aps.46.1580
|
| [13] |
Lu Wu-Xing, R.J.Schreatelkamp, J.R.Liefting, F.W.Saris. . Acta Physica Sinica,
1995, 44(7): 1101-1107.
doi: 10.7498/aps.44.1101
|
| [14] |
ZHANG JIAN-HUA, LIU ZENG-SHAN, QIN YONG-ZHI. A STUDY OF ZINC DIFFUSION IN ION-IMPLANTED POLYCRY-STALLINE ALUMINIUM. Acta Physica Sinica,
1992, 41(9): 1474-1481.
doi: 10.7498/aps.41.1474
|
| [15] |
LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG. STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON. Acta Physica Sinica,
1992, 41(6): 985-991.
doi: 10.7498/aps.41.985
|
| [16] |
SHEN HONG-LIE, YANG GEN-QING, ZHOU ZU-YAO, ZOU SHI-CHANG. INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP. Acta Physica Sinica,
1991, 40(3): 476-482.
doi: 10.7498/aps.40.476
|
| [17] |
LU WU-XING, QIAN YA-HONG, TIAN REN-HE, WANG ZHONG-LIE. SUPPRESSION AND ELIMINATION OF SECONDARY DEFECTS IN SILICON IMPLANTED WITH MeV ENERGETIC B+ IONS. Acta Physica Sinica,
1990, 39(2): 254-260.
doi: 10.7498/aps.39.254
|
| [18] |
GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA. THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica,
1988, 37(1): 152-156.
doi: 10.7498/aps.37.152
|
| [19] |
WANG WEI-YUAN, XIA GUAN-QUN, LU JIAN-GUO, SHAO YONG-FU, QIAO YONG. CARRIER PROFILE TAIL IN SILICON IMPLANTED Cr-DOPED SEMI-INSULATING GaAs SUBSTRATE. Acta Physica Sinica,
1985, 34(3): 402-407.
doi: 10.7498/aps.34.402
|
| [20] |
MO DANG, LU YIN-CHENG, LI DAN-HUI, LIU SHANG-HE, LU WU-XING. ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON. Acta Physica Sinica,
1980, 29(9): 1214-1216.
doi: 10.7498/aps.29.1214
|
下载:
