[1] |
Li Yang-Fan, Guo Hong-Xia, Zhang Hong, Bai Ru-Xue, Zhang Feng-Qi, Ma Wu-Ying, Zhong Xiang-Li, Li Ji-Fang, Lu Xiao-Jie. Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica,
2024, 73(2): 026103.
doi: 10.7498/aps.73.20231440
|
[2] |
Jia Xiao-Fei, Wei Qun, Zhang Wen-Peng, He Liang, Wu Zhen-Hua. Analysis of thermal noise characteristics in 10 nm metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2023, 72(22): 227303.
doi: 10.7498/aps.72.20230661
|
[3] |
Zhang Meng, Yao Ruo-He, Liu Yu-Rong. A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2020, 69(5): 057101.
doi: 10.7498/aps.69.20191512
|
[4] |
Zhang Meng, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei. Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2020, 69(17): 177102.
doi: 10.7498/aps.69.20200497
|
[5] |
Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan. Radiation effect and degradation mechanism in 65 nm CMOS transistor. Acta Physica Sinica,
2018, 67(14): 146103.
doi: 10.7498/aps.67.20172542
|
[6] |
Zhang Jing-Shui, Kong Ling-Qin, Dong Li-Quan, Liu Ming, Zuo Jian, Zhang Cun-Lin, Zhao Yue-Jin. Diffusion part in terahertz complementary metal oxide semiconductor transistor detector model. Acta Physica Sinica,
2017, 66(12): 127302.
doi: 10.7498/aps.66.127302
|
[7] |
Zhou Hang, Zheng Qi-Wen, Cui Jiang-Wei, Yu Xue-Feng, Guo Qi, Ren Di-Yuan, Yu De-Zhao, Su Dan-Dan. Enhanced channel hot carrier effect of 0.13 m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect. Acta Physica Sinica,
2016, 65(9): 096104.
doi: 10.7498/aps.65.096104
|
[8] |
Zheng Qi-Wen, Cui Jiang-Wei, Wang Han-Ning, Zhou Hang, Yu De-Zhao, Wei Ying, Su Dan-Dan. Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process. Acta Physica Sinica,
2016, 65(7): 076102.
doi: 10.7498/aps.65.076102
|
[9] |
Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Wang Guan-Yu. Charge model of strained Si NMOSFET. Acta Physica Sinica,
2014, 63(1): 017101.
doi: 10.7498/aps.63.017101
|
[10] |
Zhuo Qing-Qing, Liu Hong-Xia, Peng Li, Yang Zhao-Nian, Cai Hui-Min. Mechanism of three kink effects in irradiated partially-depleted SOINMOSFET's. Acta Physica Sinica,
2013, 62(3): 036105.
doi: 10.7498/aps.62.036105
|
[11] |
Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen. Study on gate capacitance-voltage characteristics of strained-SiGe pMOSFET. Acta Physica Sinica,
2013, 62(12): 127102.
doi: 10.7498/aps.62.127102
|
[12] |
Xu Li-Jun, Zhang He-Ming. Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor. Acta Physica Sinica,
2013, 62(10): 108502.
doi: 10.7498/aps.62.108502
|
[13] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica,
2012, 61(10): 107803.
doi: 10.7498/aps.61.107803
|
[14] |
Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2011, 60(6): 068702.
doi: 10.7498/aps.60.068702
|
[15] |
Qu Jiang-Tao, Wang Xiao-Yan, Zhang He-Ming, Wang Guan-Yu, Song Jian-Jun, Qin Shan-Shan. Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor. Acta Physica Sinica,
2011, 60(2): 027102.
doi: 10.7498/aps.60.027102
|
[16] |
He Bao-Ping, Yao Zhi-Bin. Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment. Acta Physica Sinica,
2010, 59(3): 1985-1990.
doi: 10.7498/aps.59.1985
|
[17] |
Li Wei-Hua, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin. Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2009, 58(10): 7183-7188.
doi: 10.7498/aps.58.7183
|
[18] |
Liu Yu-An, Du Lei, Bao Jun-Lin. Research on correlation of 1/fγ noise and hot carrier degradation in metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2008, 57(4): 2468-2475.
doi: 10.7498/aps.57.2468
|
[19] |
ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN. RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica,
2001, 50(12): 2434-2438.
doi: 10.7498/aps.50.2434
|
[20] |
WANG JIAN-PING, XU NA-JUN, ZHANG TING-QING, TANG HUA-LIAN, LIU JIA-LU, LIU CHUAN -YANG, YAO YU-JUAN, PENG HONG-LUN, HE BAO-PING, ZHANG ZHENG-XUAN. TEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR. Acta Physica Sinica,
2000, 49(7): 1331-1334.
doi: 10.7498/aps.49.1331
|