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Charge-trapping memory capacitor with LaTiON or HfLaON serving as charge storage layer is fabricated by reactive sputtering method, and influences of post-deposition annealing (PDA) in NH3 or N2 ambient on its memory characteristics are investigated. It is found that before PDA, the LaTiON sample exhibits better retention characteristic than the HfLaON sample, but the later shows larger memory window (4.8 V at +/-12 V/1 s), and after PDA, the NH3-annealed sample has faster program/erase speed, better retention and endurance properties than the N2-annealed sample, owing to nitridation role of NH3. Furthermore, the HfLaON sample with PDA in NH3achieves a large memory window of 3.8 V at +/-12 V/1 s, and also shows better retention and endurance properties than the LaTiON sample with PDA in NH3.
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Keywords:
- MONOS memory /
- LaTiON /
- HfLaON /
- annealing
[1] Fang S H, Cheng X L, Huang Y, Gu H H 2007 Acta Phys. Sin. 56 6634 (in Chinese) [房少华, 程秀兰, 黄晔, 顾怀怀 2007 物理学报 56 6634]
[2] Li L L, Yu Z G, Xiao Z Q, Zhou X J 2011 Acta Phys. Sin. 60 098502 (in Chinese) [李蕾蕾, 于宗光, 肖志强, 周昕杰 2011 物理学报 60 098502]
[3] Pan T M, Chen F H, Jung J S 2010 Appl. Phys. Lett. 96 102904
[4] Pan T M, Yeh W W 2009 J. Vac. Sci. Technol. A 27 700
[5] Pan T M, Yeh W W, Chang W T, Chen K M, Chen J W, Huang K C 2007 Semiconductor Device Research Symposium 2007 International College Park, MD, USA Dec. 12-14 2007 (Piscataway, NJ, USA: IEEE) p435
[6] Huang X D, Sin J K O, Lai P T 2012 Device and Materials Reliability 12 306
[7] Xu H X, Xu J P, Li C X, Liu L, Lai P T, Chan C L 2009 IEEE International Conference of Electron Devices and Solid-State Circuits Xi'an Dec. 25-27 2009 (Piscataway, NJ, USA: IEEE) p435
[8] Arimura H, Kitano N, Naitou Y, Oku Y, Minami T, Kosuda M, Hosoi T, Shimura T, Watanabe H 2008 Appl. Phys. Lett. 92 212902
[9] Tao Q B, Lai P T 2010 IEEE International Conference of Electron Devices and Solid-State Circuits Hongkong, China Dec. 15-17 2010 (Piscataway, NJ, USA: IEEE) p1
[10] Xu H X, Xu J P, Li C X, Chan C L, Lai P T 2010 Appl. Phys. Lett. 99 903
[11] Ji F, Xu J P, Zhang H Q, Li P T, Li C X, Guan J G 2008 Research & Progress of Solid State Electronics 28 330 (in Chinese) [季峰, 徐静平, 张洪强, 黎沛涛, 李春霞, 官建国 2008 固体电子学研究与进展 28 330]
[12] Gavartin J L, Shluger A L, Foster A S, Bersuker G I 2005 J. Appl. Phys. 97 053704
[13] van Dover R B 1999 Appl. Phys. Lett. 74 3041
[14] Huang X D, Lai P T, Sin J K O 2012 Appl. Phys. A Mater. Sci. Proc. 106 6881
[15] Huang X D, Lai P T 2010 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai Nov. 1-4 2010 (Piscataway, NJ, USA: IEEE) p900
[16] Sato S, Tachi K, Kakushima K, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H 2007 Microelectronic Engineering 84 1894
[17] Hamamura H, Itoh H, Shimogaki Y, Aoyama J, Yoshimi T, Ueda J, Komiyama H 1998 Thin Solid Films 320 31
[18] Lee W G, Lee J G 2002 Journal of The Electrochemical Society 149 G1
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[1] Fang S H, Cheng X L, Huang Y, Gu H H 2007 Acta Phys. Sin. 56 6634 (in Chinese) [房少华, 程秀兰, 黄晔, 顾怀怀 2007 物理学报 56 6634]
[2] Li L L, Yu Z G, Xiao Z Q, Zhou X J 2011 Acta Phys. Sin. 60 098502 (in Chinese) [李蕾蕾, 于宗光, 肖志强, 周昕杰 2011 物理学报 60 098502]
[3] Pan T M, Chen F H, Jung J S 2010 Appl. Phys. Lett. 96 102904
[4] Pan T M, Yeh W W 2009 J. Vac. Sci. Technol. A 27 700
[5] Pan T M, Yeh W W, Chang W T, Chen K M, Chen J W, Huang K C 2007 Semiconductor Device Research Symposium 2007 International College Park, MD, USA Dec. 12-14 2007 (Piscataway, NJ, USA: IEEE) p435
[6] Huang X D, Sin J K O, Lai P T 2012 Device and Materials Reliability 12 306
[7] Xu H X, Xu J P, Li C X, Liu L, Lai P T, Chan C L 2009 IEEE International Conference of Electron Devices and Solid-State Circuits Xi'an Dec. 25-27 2009 (Piscataway, NJ, USA: IEEE) p435
[8] Arimura H, Kitano N, Naitou Y, Oku Y, Minami T, Kosuda M, Hosoi T, Shimura T, Watanabe H 2008 Appl. Phys. Lett. 92 212902
[9] Tao Q B, Lai P T 2010 IEEE International Conference of Electron Devices and Solid-State Circuits Hongkong, China Dec. 15-17 2010 (Piscataway, NJ, USA: IEEE) p1
[10] Xu H X, Xu J P, Li C X, Chan C L, Lai P T 2010 Appl. Phys. Lett. 99 903
[11] Ji F, Xu J P, Zhang H Q, Li P T, Li C X, Guan J G 2008 Research & Progress of Solid State Electronics 28 330 (in Chinese) [季峰, 徐静平, 张洪强, 黎沛涛, 李春霞, 官建国 2008 固体电子学研究与进展 28 330]
[12] Gavartin J L, Shluger A L, Foster A S, Bersuker G I 2005 J. Appl. Phys. 97 053704
[13] van Dover R B 1999 Appl. Phys. Lett. 74 3041
[14] Huang X D, Lai P T, Sin J K O 2012 Appl. Phys. A Mater. Sci. Proc. 106 6881
[15] Huang X D, Lai P T 2010 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai Nov. 1-4 2010 (Piscataway, NJ, USA: IEEE) p900
[16] Sato S, Tachi K, Kakushima K, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H 2007 Microelectronic Engineering 84 1894
[17] Hamamura H, Itoh H, Shimogaki Y, Aoyama J, Yoshimi T, Ueda J, Komiyama H 1998 Thin Solid Films 320 31
[18] Lee W G, Lee J G 2002 Journal of The Electrochemical Society 149 G1
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