Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Clean transfer of chemical vapor deposition graphene film

Zhang Xiao-Bo Qing Fang-Zhu Li Xue-Song

Citation:

Clean transfer of chemical vapor deposition graphene film

Zhang Xiao-Bo, Qing Fang-Zhu, Li Xue-Song
PDF
HTML
Get Citation
  • Graphene is believed to have promising applications in many fields because of its unique properties. At present, graphene films are mainly prepared on Cu substrates by chemical vapor deposition. The graphene films prepared in this way need to be transferred to the target substrates for further applications, while the transfer process inevitably induces contamination on graphene, which affects the properties of graphene and the performance of devices. Therefore, how to reduce or avoid contamination and realize the clean transfer of graphene is an important topic for the development of graphene transfer technology, which is the major topic of this review. Here, firstly, the transfer techniques of graphene are briefly reviewed, which can be classified according to different rules. For example, it can be classified as direct transfer, with which graphene is directly stuck to the target substrate, and indirect transfer, with which graphene is indirectly transferred to the target substrate with a carrier film. According to the way of separating graphene and the growth substrate, it can also be classified as dissolving transfer, with which the substrate is dissolved by chemical etchant, and delaminating transfer, with which graphene is delaminated from the substrate. Then the origins of contamination are discussed followed with how contamination affects graphene properties. The main contaminations induced by transfer are ions from the etchant and electrolyte, undissolved metal or metal oxide particles, and organic residues from carrier films. Contaminations have a great influence on the electrical, thermal and optical properties of graphene. Then the up-to-date progress of techniques for clean transfer is reviewed, including modifying the cleaning process or using alternative etchant/electrolyte to remove or suppress metal contamination and annealing graphene or using alternative carrier films (e.g., more dissoluble materials) to remove or suppress organic residues. Finally, the challenges of clean transfer of graphene are summarized, and future research directions and opportunities are prospected. This review not only contributes to the research of graphene film transfer technology, but also has great reference value for the clean fabrication of the whole two-dimensional materials and devices.
      Corresponding author: Qing Fang-Zhu, qingfz@uestc.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51802036, 51772043), the China Scholarship Council (Grant No. 201708515008), the Key Research and Development Program of Sichuan Province, China (Grant No. 2018GZ0434), and the Applied Basic Research Program of Sichuan Province, China (Grant No. 2019YJ0168).
    [1]

    Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666Google Scholar

    [2]

    Novoselov K S, Fal'ko V I, Colombo L, Gellert P R, Schwab M G, Kim K 2012 Nature 490 192Google Scholar

    [3]

    Hernandez Y, Nicolosi V, Lotya M, Blighe F M, Sun Z, De S, McGovern I T, Holland B, Byrne M, Gun'Ko Y K, Boland J J, Niraj P, Duesberg G, Krishnamurthy S, Goodhue R, Hutchison J, Scardaci V, Ferrari A C, Coleman J N 2008 Nat. Nanotechnol. 3 563Google Scholar

    [4]

    Stankovich S, Dikin D A, Piner R D, Kohlhaas K A, Kleinhammes A, Jia Y, Wu Y, Nguyen S T, Ruoff R S 2007 Carbon 45 1558Google Scholar

    [5]

    Eda G, Fanchini G, Chhowalla M 2008 Nat. Nanotechnol. 3 270Google Scholar

    [6]

    Berger C, Song Z, Li T, Li X, Ogbazghi A Y, Feng R, Dai Z, Marchenkov A N, Conrad E H, First P N, de Heer W A 2004 J. Phys. Chem. B 108 19912Google Scholar

    [7]

    Berger C, Song Z, Li X, Wu X, Brown N, Naud C, Mayou D, Li T, Hass J, Marchenkov A N, Conrad E H, First P N, de Heer W A 2006 Science 312 1191Google Scholar

    [8]

    Kim K S, Zhao Y, Jang H, Lee S Y, Kim J M, Kim K S, Ahn J H, Kim P, Choi J Y, Hong B H 2009 Nature 457 706Google Scholar

    [9]

    Li X, Cai W, An J, Kim S, Nah J, Yang D, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee S K, Colombo L, Ruoff R S 2009 Science 324 1312Google Scholar

    [10]

    Hao Y, Bharathi M S, Wang L, Liu Y, Chen H, Nie S, Wang X, Chou H, Tan C, Fallahazad B, Ramanarayan H, Magnuson C W, Tutuc E, Yakobson B I, McCarty K F, Zhang Y W, Kim P, Hone J, Colombo L, Ruoff R S 2013 Science 342 720Google Scholar

    [11]

    Hao Y, Wang L, Liu Y, Chen H, Wang X, Tan C, Nie S, Suk J W, Jiang T, Liang T, Xiao J, Ye W, Dean C R, Yakobson B I, McCarty K F, Kim P, Hone J, Colombo L, Ruoff R S 2016 Nat. Nanotechnol. 11 426Google Scholar

    [12]

    Li X, Colombo L, Ruoff R S 2016 Adv. Mater. 28 6247Google Scholar

    [13]

    Qing F, Shen C, Jia R, Zhan L, Li X 2017 MRS Bull. 42 819Google Scholar

    [14]

    Zhu Y, Ji H, Cheng H M, Ruoff R S 2018 Natl. Sci. Rev. 5 90Google Scholar

    [15]

    Kang J, Shin D, Bae S, Hong B H 2012 Nanoscale 4 5527Google Scholar

    [16]

    Chen Y, Gong X L, Gai J G 2016 Adv. Sci. 3 1500343Google Scholar

    [17]

    Lee H C, Liu W W, Chai S P, Mohamed A R, Aziz A, Khe C S, Hidayah N M S, Hashim U 2017 RSC Adv. 7 15644Google Scholar

    [18]

    Chen M, Haddon R C, Yan R, Bekyarova E 2017 Mater. Horiz. 4 1054Google Scholar

    [19]

    Bae S, Kim H, Lee Y, Xu X, Park J S, Zheng Y, Balakrishnan J, Lei T, Kim H R, Song Y I, Kim Y J, Kim K S, Ozyilmaz B, Ahn J H, Hong B H, Iijima S 2010 Nat. Nanotechnol. 5 574Google Scholar

    [20]

    Wang Y, Zheng Y, Xu X, Dubuisson E, Bao Q, Lu J, Loh K P 2011 ACS Nano 5 9927Google Scholar

    [21]

    Juang Z Y, Wu C Y, Lu A Y, Su C Y, Leou K C, Chen F R, Tsai C H 2010 Carbon 48 3169Google Scholar

    [22]

    Yoon T, Shin W C, Kim T Y, Mun J H, Kim T S, Cho B J 2012 Nano Lett. 12 1448Google Scholar

    [23]

    Lock E H, Baraket M, Laskoski M, Mulvaney S P, Lee W K, Sheehan P E, Hines D R, Robinson J T, Tosado J, Fuhrer M S, Hernandez S C, Walton S G 2012 Nano Lett. 12 102Google Scholar

    [24]

    Bajpai R, Roy S, Jain L, Kulshrestha N, Hazra K S, Misra D S 2011 Nanotechnology 22 225606Google Scholar

    [25]

    Kobayashi T, Bando M, Kimura N, Shimizu K, Kadono K, Umezu N, Miyahara K, Hayazaki S, Nagai S, Mizuguchi Y, Murakami Y, Hobara D 2013 Appl. Phys. Lett. 102 023112Google Scholar

    [26]

    Liu W, Jackson B L, Zhu J, Miao C Q, Chung C H, Park Y J, Sun K, Woo J, Xie Y H 2010 ACS Nano 4 3927Google Scholar

    [27]

    Lee Y H, Lee J H 2010 Appl. Phys. Lett. 96 083101Google Scholar

    [28]

    Suk J W, Kitt A, Magnuson C W, Hao Y, Ahmed S, An J, Swan A K, Goldberg B B, Ruoff R S 2011 ACS Nano 5 6916Google Scholar

    [29]

    Liang X, Sperling B A, Calizo I, Cheng G, Hacker C A, Zhang Q, Obeng Y, Yan K, Peng H, Li Q, Zhu X, Yuan H, Walker A R, Liu Z, Peng L M, Richter C A 2011 ACS Nano 5 9144Google Scholar

    [30]

    Gao L, Ren W, Xu H, Jin L, Wang Z, Ma T, Ma L P, Zhang Z, Fu Q, Peng L M, Bao X, Cheng H M 2012 Nat. Commun. 3 699Google Scholar

    [31]

    Cherian C T, Giustiniano F, Martin-Fernandez I, Andersen H, Balakrishnan J, Ozyilmaz B 2015 Small 11 189Google Scholar

    [32]

    Pizzocchero F, Jessen B S, Whelan P R, Kostesha N, Lee S, Buron J D, Petrushina I, Larsen M B, Greenwood P, Cha W J, Teo K, Jepsen P U, Hone J, Bøggild P, Booth T J 2015 Carbon 85 397Google Scholar

    [33]

    Krasheninnikov A V, Nieminen R M 2011 Theor. Chem. Acc. 129 625Google Scholar

    [34]

    Miller-Chou B A, Koenig J L 2003 Prog. Polym. Sci. 28 1223Google Scholar

    [35]

    Kim S, Shin S, Kim T, Du H, Song M, Lee C, Kim K, Cho S, Seo D H, Seo S 2016 Carbon 98 352

    [36]

    Suk J W, Lee W H, Lee J, Chou H, Piner R D, Hao Y, Akinwande D, Ruoff R S 2013 Nano Lett. 13 1462Google Scholar

    [37]

    Song J, Kam F Y, Png R Q, Seah W L, Zhuo J M, Lim G K, Ho P K, Chua L L 2013 Nat. Nanotechnol. 8 356Google Scholar

    [38]

    Hong S K, Song S M, Sul O, Cho B J 2012 J. Electrochem. Soc. 159 K107Google Scholar

    [39]

    Kim B J, Shrivastava N K, Nasir T, Choi K S, Lee J, Kim H C, Kim K W, Devika M, Lee S H, Jeong B J, Yu H K, Choi J Y 2017 Phys. Status Solidi RRL 11 1700240Google Scholar

    [40]

    Zhao G, Li X, Huang M, Zhen Z, Zhong Y, Chen Q, Zhao X, He Y, Hu R, Yang T, Zhang R, Li C, Kong J, Xu J B, Ruoff R S, Zhu H 2017 Chem. Soc. Rev. 46 4417Google Scholar

    [41]

    Chen J H, Jang C, Xiao S, Ishigami M, Fuhrer M S 2008 Nat. Nanotechnol. 3 206Google Scholar

    [42]

    Pirkle A, Chan J, Venugopal A, Hinojos D, Magnuson C W, McDonnell S, Colombo L, Vogel E M, Ruoff R S, Wallace R M 2011 Appl. Phys. Lett. 99 122108Google Scholar

    [43]

    Ahn Y, Kim H, Kim Y H, Yi Y, Kim S I 2013 Appl. Phys. Lett. 102 091602Google Scholar

    [44]

    Pettes M T, Jo I, Yao Z, Shi L 2011 Nano Lett. 11 1195Google Scholar

    [45]

    Lagatsky A A, Sun Z, Kulmala T S, Sundaram R S, Milana S, Torrisi F, Antipov O L, Lee Y, Ahn J H, Brown C T A, Sibbett W, Ferrari A C 2013 Appl. Phys. Lett. 102 013113Google Scholar

    [46]

    Wang D Y, Huang I S, Ho P H, Li S S, Yeh Y C, Wang D W, Chen W L, Lee Y Y, Chang Y M, Chen C C, Liang C T, Chen C W 2013 Adv. Mater. 25 4521Google Scholar

    [47]

    Kim Y, Kim H, Kim T Y, Rhyu S H, Choi D S, Park W K, Yang C M, Yoon D H, Yang W S 2015 Carbon 81 458Google Scholar

    [48]

    Lavin-Lopez M P, Valverde J L, Garrido A, Sanchez-Silva L, Martinez P, Romero-Izquierdo A 2014 Chem. Phys. Lett. 614 89Google Scholar

    [49]

    Gorantla S, Bachmatiuk A, Hwang J, Alsalman H A, Kwak J Y, Seyller T, Eckert J, Spencer M G, Rummeli M H 2014 Nanoscale 6 889Google Scholar

    [50]

    Gupta P, Dongare P D, Grover S, Dubey S, Mamgain H, Bhattacharya A, Deshmukh M M 2014 Sci. Rep. 4 3882

    [51]

    Lin Y C, Jin C, Lee J C, Jen S F, Suenaga K, Chiu P W 2011 ACS Nano 5 2362Google Scholar

    [52]

    Cheng Z, Zhou Q, Wang C, Li Q, Wang C, Fang Y 2011 Nano Lett. 11 767Google Scholar

    [53]

    Dan Y, Lu Y, Kybert N J, Luo Z, Johnson A T 2009 Nano Lett. 9 1472Google Scholar

    [54]

    Booth T J, Blake P, Nair R R, Jiang D, Hill E W, Bangert U, Bleloch A, Gass M, Novoselov K S, Katsnelson M I, Geim A K 2008 Nano Lett. 8 2442Google Scholar

    [55]

    Elias D C, Nair R R, Mohiuddin T M, Morozov S V, Blake P, Halsall M P, Ferrari A C, Boukhvalov D W, Katsnelson M I, Geim A K, Novoselov K S 2009 Science 323 610Google Scholar

    [56]

    Wang X, Dolocan A, Chou H, Tao L, Dick A, Akinwande D, Willson C G 2017 Chem. Mater. 29 2033Google Scholar

    [57]

    Lin Y C, Lu C C, Yeh C H, Jin C, Suenaga K, Chiu P W 2012 Nano Lett. 12 414Google Scholar

    [58]

    Suhail A, Islam K, Li B, Jenkins D, Pan G 2017 Appl. Phys. Lett. 110 183103Google Scholar

    [59]

    Kim S J, Choi T, Lee B, Lee S, Choi K, Park J B, Yoo J M, Choi Y S, Ryu J, Kim P, Hone J, Hong B H 2015 Nano Lett. 15 3236Google Scholar

    [60]

    Su Y, Han H L, Cai Q, Wu Q, Xie M, Chen D, Geng B, Zhang Y, Wang F, Shen Y R, Tian C 2015 Nano Lett. 15 6501Google Scholar

    [61]

    Kim H H, Kang B, Suk J W, Li N, Kim K S, Ruoff R S, Lee W H, Cho K 2015 ACS Nano 9 4726Google Scholar

    [62]

    Brajpuriya R, Dikonimos T, Buonocore F, Lisi N 2015 International Conference on the Recent Trends in Materials and Devices India December 15−17, 2015 p325

    [63]

    Chen M, Li G, Li W, Stekovic D, Arkook B, Itkis M E, Pekker A, Bekyarova E, Haddon R C 2016 Carbon 110 286Google Scholar

    [64]

    Zhang Z, Du J, Zhang D, Sun H, Yin L, Ma L, Chen J, Ma D, Cheng H M, Ren W 2017 Nat. Commun. 8 14560Google Scholar

    [65]

    Chen M, Stekovic D, Li W, Arkook B, Haddon R C, Bekyarova E 2017 Nanotechnology 28 255701Google Scholar

    [66]

    Choi J, Kim H, Park J, Iqbal M W, Iqbal M Z, Eom J, Jung J 2014 Current Appl. Phys. 14 1045

    [67]

    Han Y, Zhang L, Zhang X, Ruan K, Cui L, Wang Y, Liao L, Wang Z, Jie J 2014 J. Mater. Chem. C 2 201Google Scholar

    [68]

    Chen X D, Liu Z B, Zheng C Y, Xing F, Yan X Q, Chen Y, Tian J G 2013 Carbon 56 271Google Scholar

    [69]

    Lin W H, Chen T H, Chang J K, Taur J I, Lo Y Y, Lee W L, Chang C S, Su W B, Wu C I 2014 ACS Nano 8 1784Google Scholar

    [70]

    Pasternak I, Krajewska A, Grodecki K, Jozwik-Biala I, Sobczak K, Strupinski W 2014 AIP Adv. 4 097133Google Scholar

    [71]

    Wang B, Huang M, Tao L, Lee S H, Jang A R, Li B W, Shin H S, Akinwande D, Ruoff R S 2016 ACS Nano 10 1404Google Scholar

    [72]

    Zhang G, Guell A G, Kirkman P M, Lazenby R A, Miller T S, Unwin P R 2016 ACS Appl. Mat. Interfaces 8 8008Google Scholar

    [73]

    Qing F, Hou Y, Stehle R, Li X 2019 APL Mater. 7 020903Google Scholar

  • 图 1  石墨烯直接转移与间接转移示意图

    Figure 1.  Schematic of direct and indirect transfer of graphene

    图 2  各种转移方法示意图 (a) “卷对卷”转移[19]; (b)电化学分离转移[20]; (c)机械剥离转移[22]; (d)溶解基底的直接转移[25]

    Figure 2.  Schematics of various transfer methods: (a) “R2R” transfer[19]; (b) electrochemical delamination transfer[20]; (c) mechanical delamination transfer[22]; (d) direct transfer by dissolving the substrate[25].

    图 3  不同平均分子量PMMA转移的石墨烯的AFM图和归一化高度分布图[35], 其中对应PMMA的平均分子量为: (a), (e) 996000; (b), (f) 350000; (c), (g) 35000; (d), (h) 15000; AFM图像上方的曲线是AFM图像中白色斜线的线扫描, AFM图像尺寸为5 μm × 5 μm

    Figure 3.  AFM images and normalized height distribution profiles of transferred graphene using PMMA with different average molecular weight: (a), (e) 996000; (b), (f) 350000; (c), (g) 35000; (d), (h) 15000[35]. The curves above each AFM image represent the line profile of the white slanting line in the images. The size of AFM surface image is 5 μm × 5 μm.

    图 4  石墨烯与聚合物的相互作用力示意图[40] (a) 范德瓦耳斯力; (b) $ {\text{π}}$$ {\text{π}}$键; (c)静电力; (d)化学键

    Figure 4.  The interactions between polymers and graphene[40]: (a) van der Waals force; (b) $ {\text{π}}$$ {\text{π}}$ interactions; (c) electrostatic interactions; (d) chemical bonding.

    图 5  结合硅晶圆清洗技术的间接转移[29] (a)采用改进的石墨烯清洗方法的转移流程; (b), (c)传统转移和(d), (e)改进的石墨烯清洗转移的光学图像和扫描电子显微镜图像; (b)和(c)中金属微粒残留用蓝色圆圈标记, 小破洞用黄色圆圈标记, 多层石墨烯区域(对比度较暗)用箭头标记; (e)中箭头标记的窄的黑色线条为褶皱

    Figure 5.  Indirect graphene transfer with “modified RCA clean”[29]: (a) Transfer process flow; optical microscopy images and scanning electron microscopy images of (b), (c) traditional transferred graphene film and (d), (e) modified RCA cleaning transferred graphene film. In (b) and (c) the metal residues and the small holes are marked with blue circles and yellow circles, respectively, and the graphene adlayers (with darker contrast) are marked with arrows. The arrow in (e) points to the wrinkles (the dark lines).

    图 6  使用NH4OH+H2O2转移石墨烯流程图[49]

    Figure 6.  Schematic of graphene transfer with NH4OH and H2O2[49]

    图 7  热去离子水浸湿-剥离石墨烯转移流程图[50]

    Figure 7.  Schematic showing the steps of graphene transfer with hot deionized (DI) water[50].

    图 8  石墨烯在空气和H2/Ar 200 ℃退火2 h后的TEM图像[57] (a), (b)显示表面清洁度的细节, 下面对应面板中复制的着色的图像用以区分分解温度不同的PMMA残留物, 没有PMMA的区域在彩色图像中显示为灰色; 左下角的图解释了相应的颜色, 其中蓝色、红色和黄色分别代表PMMA-G, PMMA-A和Cu纳米颗粒; (c)图(b)中所示区域的TEM高分辨图, 显示仍有PMMA残留物

    Figure 8.  TEM images of graphene after air and H2/Ar two-step annealing at 250 ℃ for 2 h[57]. Panels (a) and (b) show the details of surface cleanliness. The same images are duplicated and colored in the lower panels to distinguish the PMMA residues that decomposed differently. The areas free of PMMA are shown in gray in the colored images. The bottom-left image interprets the meaning of different colors, in which blue, red, and yellow stand for PMMA-G, PMMA-A, and Cu nanoparticles, respectively. (c) Atomic resolution of graphene clean surface with PMMA residue shown piecewise at the bottom corner after annealing.

    图 9  用于石墨烯间接转移的中介层材料

    Figure 9.  Carrier layer materials for indirect transfer of graphene.

    图 10  TRT, PMMA, PET/Silicone作为中介层转移结果的对比[68] (a)−(c)光学显微图像; (d)−(f)三维AFM图像

    Figure 10.  (a)−(c) Optical and (d)−(f) three-dimensional AFM images showing the surface morphologies of the monolayer graphene films transferred onto SiO2/Si substrates by TRT, PMMA and PET/silicone, respectively[68].

  • [1]

    Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666Google Scholar

    [2]

    Novoselov K S, Fal'ko V I, Colombo L, Gellert P R, Schwab M G, Kim K 2012 Nature 490 192Google Scholar

    [3]

    Hernandez Y, Nicolosi V, Lotya M, Blighe F M, Sun Z, De S, McGovern I T, Holland B, Byrne M, Gun'Ko Y K, Boland J J, Niraj P, Duesberg G, Krishnamurthy S, Goodhue R, Hutchison J, Scardaci V, Ferrari A C, Coleman J N 2008 Nat. Nanotechnol. 3 563Google Scholar

    [4]

    Stankovich S, Dikin D A, Piner R D, Kohlhaas K A, Kleinhammes A, Jia Y, Wu Y, Nguyen S T, Ruoff R S 2007 Carbon 45 1558Google Scholar

    [5]

    Eda G, Fanchini G, Chhowalla M 2008 Nat. Nanotechnol. 3 270Google Scholar

    [6]

    Berger C, Song Z, Li T, Li X, Ogbazghi A Y, Feng R, Dai Z, Marchenkov A N, Conrad E H, First P N, de Heer W A 2004 J. Phys. Chem. B 108 19912Google Scholar

    [7]

    Berger C, Song Z, Li X, Wu X, Brown N, Naud C, Mayou D, Li T, Hass J, Marchenkov A N, Conrad E H, First P N, de Heer W A 2006 Science 312 1191Google Scholar

    [8]

    Kim K S, Zhao Y, Jang H, Lee S Y, Kim J M, Kim K S, Ahn J H, Kim P, Choi J Y, Hong B H 2009 Nature 457 706Google Scholar

    [9]

    Li X, Cai W, An J, Kim S, Nah J, Yang D, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee S K, Colombo L, Ruoff R S 2009 Science 324 1312Google Scholar

    [10]

    Hao Y, Bharathi M S, Wang L, Liu Y, Chen H, Nie S, Wang X, Chou H, Tan C, Fallahazad B, Ramanarayan H, Magnuson C W, Tutuc E, Yakobson B I, McCarty K F, Zhang Y W, Kim P, Hone J, Colombo L, Ruoff R S 2013 Science 342 720Google Scholar

    [11]

    Hao Y, Wang L, Liu Y, Chen H, Wang X, Tan C, Nie S, Suk J W, Jiang T, Liang T, Xiao J, Ye W, Dean C R, Yakobson B I, McCarty K F, Kim P, Hone J, Colombo L, Ruoff R S 2016 Nat. Nanotechnol. 11 426Google Scholar

    [12]

    Li X, Colombo L, Ruoff R S 2016 Adv. Mater. 28 6247Google Scholar

    [13]

    Qing F, Shen C, Jia R, Zhan L, Li X 2017 MRS Bull. 42 819Google Scholar

    [14]

    Zhu Y, Ji H, Cheng H M, Ruoff R S 2018 Natl. Sci. Rev. 5 90Google Scholar

    [15]

    Kang J, Shin D, Bae S, Hong B H 2012 Nanoscale 4 5527Google Scholar

    [16]

    Chen Y, Gong X L, Gai J G 2016 Adv. Sci. 3 1500343Google Scholar

    [17]

    Lee H C, Liu W W, Chai S P, Mohamed A R, Aziz A, Khe C S, Hidayah N M S, Hashim U 2017 RSC Adv. 7 15644Google Scholar

    [18]

    Chen M, Haddon R C, Yan R, Bekyarova E 2017 Mater. Horiz. 4 1054Google Scholar

    [19]

    Bae S, Kim H, Lee Y, Xu X, Park J S, Zheng Y, Balakrishnan J, Lei T, Kim H R, Song Y I, Kim Y J, Kim K S, Ozyilmaz B, Ahn J H, Hong B H, Iijima S 2010 Nat. Nanotechnol. 5 574Google Scholar

    [20]

    Wang Y, Zheng Y, Xu X, Dubuisson E, Bao Q, Lu J, Loh K P 2011 ACS Nano 5 9927Google Scholar

    [21]

    Juang Z Y, Wu C Y, Lu A Y, Su C Y, Leou K C, Chen F R, Tsai C H 2010 Carbon 48 3169Google Scholar

    [22]

    Yoon T, Shin W C, Kim T Y, Mun J H, Kim T S, Cho B J 2012 Nano Lett. 12 1448Google Scholar

    [23]

    Lock E H, Baraket M, Laskoski M, Mulvaney S P, Lee W K, Sheehan P E, Hines D R, Robinson J T, Tosado J, Fuhrer M S, Hernandez S C, Walton S G 2012 Nano Lett. 12 102Google Scholar

    [24]

    Bajpai R, Roy S, Jain L, Kulshrestha N, Hazra K S, Misra D S 2011 Nanotechnology 22 225606Google Scholar

    [25]

    Kobayashi T, Bando M, Kimura N, Shimizu K, Kadono K, Umezu N, Miyahara K, Hayazaki S, Nagai S, Mizuguchi Y, Murakami Y, Hobara D 2013 Appl. Phys. Lett. 102 023112Google Scholar

    [26]

    Liu W, Jackson B L, Zhu J, Miao C Q, Chung C H, Park Y J, Sun K, Woo J, Xie Y H 2010 ACS Nano 4 3927Google Scholar

    [27]

    Lee Y H, Lee J H 2010 Appl. Phys. Lett. 96 083101Google Scholar

    [28]

    Suk J W, Kitt A, Magnuson C W, Hao Y, Ahmed S, An J, Swan A K, Goldberg B B, Ruoff R S 2011 ACS Nano 5 6916Google Scholar

    [29]

    Liang X, Sperling B A, Calizo I, Cheng G, Hacker C A, Zhang Q, Obeng Y, Yan K, Peng H, Li Q, Zhu X, Yuan H, Walker A R, Liu Z, Peng L M, Richter C A 2011 ACS Nano 5 9144Google Scholar

    [30]

    Gao L, Ren W, Xu H, Jin L, Wang Z, Ma T, Ma L P, Zhang Z, Fu Q, Peng L M, Bao X, Cheng H M 2012 Nat. Commun. 3 699Google Scholar

    [31]

    Cherian C T, Giustiniano F, Martin-Fernandez I, Andersen H, Balakrishnan J, Ozyilmaz B 2015 Small 11 189Google Scholar

    [32]

    Pizzocchero F, Jessen B S, Whelan P R, Kostesha N, Lee S, Buron J D, Petrushina I, Larsen M B, Greenwood P, Cha W J, Teo K, Jepsen P U, Hone J, Bøggild P, Booth T J 2015 Carbon 85 397Google Scholar

    [33]

    Krasheninnikov A V, Nieminen R M 2011 Theor. Chem. Acc. 129 625Google Scholar

    [34]

    Miller-Chou B A, Koenig J L 2003 Prog. Polym. Sci. 28 1223Google Scholar

    [35]

    Kim S, Shin S, Kim T, Du H, Song M, Lee C, Kim K, Cho S, Seo D H, Seo S 2016 Carbon 98 352

    [36]

    Suk J W, Lee W H, Lee J, Chou H, Piner R D, Hao Y, Akinwande D, Ruoff R S 2013 Nano Lett. 13 1462Google Scholar

    [37]

    Song J, Kam F Y, Png R Q, Seah W L, Zhuo J M, Lim G K, Ho P K, Chua L L 2013 Nat. Nanotechnol. 8 356Google Scholar

    [38]

    Hong S K, Song S M, Sul O, Cho B J 2012 J. Electrochem. Soc. 159 K107Google Scholar

    [39]

    Kim B J, Shrivastava N K, Nasir T, Choi K S, Lee J, Kim H C, Kim K W, Devika M, Lee S H, Jeong B J, Yu H K, Choi J Y 2017 Phys. Status Solidi RRL 11 1700240Google Scholar

    [40]

    Zhao G, Li X, Huang M, Zhen Z, Zhong Y, Chen Q, Zhao X, He Y, Hu R, Yang T, Zhang R, Li C, Kong J, Xu J B, Ruoff R S, Zhu H 2017 Chem. Soc. Rev. 46 4417Google Scholar

    [41]

    Chen J H, Jang C, Xiao S, Ishigami M, Fuhrer M S 2008 Nat. Nanotechnol. 3 206Google Scholar

    [42]

    Pirkle A, Chan J, Venugopal A, Hinojos D, Magnuson C W, McDonnell S, Colombo L, Vogel E M, Ruoff R S, Wallace R M 2011 Appl. Phys. Lett. 99 122108Google Scholar

    [43]

    Ahn Y, Kim H, Kim Y H, Yi Y, Kim S I 2013 Appl. Phys. Lett. 102 091602Google Scholar

    [44]

    Pettes M T, Jo I, Yao Z, Shi L 2011 Nano Lett. 11 1195Google Scholar

    [45]

    Lagatsky A A, Sun Z, Kulmala T S, Sundaram R S, Milana S, Torrisi F, Antipov O L, Lee Y, Ahn J H, Brown C T A, Sibbett W, Ferrari A C 2013 Appl. Phys. Lett. 102 013113Google Scholar

    [46]

    Wang D Y, Huang I S, Ho P H, Li S S, Yeh Y C, Wang D W, Chen W L, Lee Y Y, Chang Y M, Chen C C, Liang C T, Chen C W 2013 Adv. Mater. 25 4521Google Scholar

    [47]

    Kim Y, Kim H, Kim T Y, Rhyu S H, Choi D S, Park W K, Yang C M, Yoon D H, Yang W S 2015 Carbon 81 458Google Scholar

    [48]

    Lavin-Lopez M P, Valverde J L, Garrido A, Sanchez-Silva L, Martinez P, Romero-Izquierdo A 2014 Chem. Phys. Lett. 614 89Google Scholar

    [49]

    Gorantla S, Bachmatiuk A, Hwang J, Alsalman H A, Kwak J Y, Seyller T, Eckert J, Spencer M G, Rummeli M H 2014 Nanoscale 6 889Google Scholar

    [50]

    Gupta P, Dongare P D, Grover S, Dubey S, Mamgain H, Bhattacharya A, Deshmukh M M 2014 Sci. Rep. 4 3882

    [51]

    Lin Y C, Jin C, Lee J C, Jen S F, Suenaga K, Chiu P W 2011 ACS Nano 5 2362Google Scholar

    [52]

    Cheng Z, Zhou Q, Wang C, Li Q, Wang C, Fang Y 2011 Nano Lett. 11 767Google Scholar

    [53]

    Dan Y, Lu Y, Kybert N J, Luo Z, Johnson A T 2009 Nano Lett. 9 1472Google Scholar

    [54]

    Booth T J, Blake P, Nair R R, Jiang D, Hill E W, Bangert U, Bleloch A, Gass M, Novoselov K S, Katsnelson M I, Geim A K 2008 Nano Lett. 8 2442Google Scholar

    [55]

    Elias D C, Nair R R, Mohiuddin T M, Morozov S V, Blake P, Halsall M P, Ferrari A C, Boukhvalov D W, Katsnelson M I, Geim A K, Novoselov K S 2009 Science 323 610Google Scholar

    [56]

    Wang X, Dolocan A, Chou H, Tao L, Dick A, Akinwande D, Willson C G 2017 Chem. Mater. 29 2033Google Scholar

    [57]

    Lin Y C, Lu C C, Yeh C H, Jin C, Suenaga K, Chiu P W 2012 Nano Lett. 12 414Google Scholar

    [58]

    Suhail A, Islam K, Li B, Jenkins D, Pan G 2017 Appl. Phys. Lett. 110 183103Google Scholar

    [59]

    Kim S J, Choi T, Lee B, Lee S, Choi K, Park J B, Yoo J M, Choi Y S, Ryu J, Kim P, Hone J, Hong B H 2015 Nano Lett. 15 3236Google Scholar

    [60]

    Su Y, Han H L, Cai Q, Wu Q, Xie M, Chen D, Geng B, Zhang Y, Wang F, Shen Y R, Tian C 2015 Nano Lett. 15 6501Google Scholar

    [61]

    Kim H H, Kang B, Suk J W, Li N, Kim K S, Ruoff R S, Lee W H, Cho K 2015 ACS Nano 9 4726Google Scholar

    [62]

    Brajpuriya R, Dikonimos T, Buonocore F, Lisi N 2015 International Conference on the Recent Trends in Materials and Devices India December 15−17, 2015 p325

    [63]

    Chen M, Li G, Li W, Stekovic D, Arkook B, Itkis M E, Pekker A, Bekyarova E, Haddon R C 2016 Carbon 110 286Google Scholar

    [64]

    Zhang Z, Du J, Zhang D, Sun H, Yin L, Ma L, Chen J, Ma D, Cheng H M, Ren W 2017 Nat. Commun. 8 14560Google Scholar

    [65]

    Chen M, Stekovic D, Li W, Arkook B, Haddon R C, Bekyarova E 2017 Nanotechnology 28 255701Google Scholar

    [66]

    Choi J, Kim H, Park J, Iqbal M W, Iqbal M Z, Eom J, Jung J 2014 Current Appl. Phys. 14 1045

    [67]

    Han Y, Zhang L, Zhang X, Ruan K, Cui L, Wang Y, Liao L, Wang Z, Jie J 2014 J. Mater. Chem. C 2 201Google Scholar

    [68]

    Chen X D, Liu Z B, Zheng C Y, Xing F, Yan X Q, Chen Y, Tian J G 2013 Carbon 56 271Google Scholar

    [69]

    Lin W H, Chen T H, Chang J K, Taur J I, Lo Y Y, Lee W L, Chang C S, Su W B, Wu C I 2014 ACS Nano 8 1784Google Scholar

    [70]

    Pasternak I, Krajewska A, Grodecki K, Jozwik-Biala I, Sobczak K, Strupinski W 2014 AIP Adv. 4 097133Google Scholar

    [71]

    Wang B, Huang M, Tao L, Lee S H, Jang A R, Li B W, Shin H S, Akinwande D, Ruoff R S 2016 ACS Nano 10 1404Google Scholar

    [72]

    Zhang G, Guell A G, Kirkman P M, Lazenby R A, Miller T S, Unwin P R 2016 ACS Appl. Mat. Interfaces 8 8008Google Scholar

    [73]

    Qing F, Hou Y, Stehle R, Li X 2019 APL Mater. 7 020903Google Scholar

  • [1] Yu Xin-Xiu, Li Duo-Sheng, Ye Yin, Lang Wen-Chang, Liu Jun-Hong, Chen Jing-Song, Yu Shuang-Shuang. Molecular dynamics simulation of effect of nickel transition layer on deposition of carbon atoms and graphene growth on cemented carbide surfaces. Acta Physica Sinica, 2024, 73(23): 238701. doi: 10.7498/aps.73.20241170
    [2] Gao Feng, Li Huan-Qing, Song Zhuo, Zhao Yu-Hong. The Evolution of Grain Boundary Dislocations in Graphene Induced by Strain: Three-Mode Phase-Field Crystal Method. Acta Physica Sinica, 2024, 73(24): . doi: 10.7498/aps.73.20241368
    [3] Ding Ye-Zhang, Ye Yin, Li Duo-Sheng, Xu Feng, Lang Wen-Chang, Liu Jun-Hong, Wen Xin. Molecular dynamics simulation of graphene deposition and growth on WC-Co cemented carbides. Acta Physica Sinica, 2023, 72(6): 068703. doi: 10.7498/aps.72.20221332
    [4] Fu Qun-Dong, Wang Xiao-Wei, Zhou Xiu-Xian, Zhu Chao, Liu Zheng. Synthesis of two-dimensional Bi2O2Se on silicon substrate by chemical vapor deposition and its photoelectric detection application. Acta Physica Sinica, 2022, 71(16): 166101. doi: 10.7498/aps.71.20220388
    [5] Chen Shan-Deng, Bai Qing-Shun, Dou Yu-Hao, Guo Wan-Min, Wang Hong-Fei, Du Yun-Long. Simulation research on nucleation mechanism of graphene deposition assisted by diamond grain boundary. Acta Physica Sinica, 2022, 71(8): 086103. doi: 10.7498/aps.71.20211981
    [6] Xu Xiang, Zhang Ying, Yan Qing, Liu Jing-Jing, Wang Jun, Xu Xin-Long, Hua Deng-Xin. Photochemical properties of rhenium disulfide/graphene heterojunctions with different stacking structures. Acta Physica Sinica, 2021, 70(9): 098203. doi: 10.7498/aps.70.20201904
    [7] Zhou Hai-Tao, Xiong Xi-Ya, Luo Fei, Luo Bing-Wei, Liu Da-Bo, Shen Cheng-Min. Graphene enforced copper matrix composites fabricated by in-situ deposition technique. Acta Physica Sinica, 2021, 70(8): 086201. doi: 10.7498/aps.70.20201943
    [8] Bai Qing-Shun, Dou Yu-Hao, He Xin, Zhang Ai-Min, Guo Yong-Bo. Deposition and growth mechanism of graphene on copper crystal surface based on molecular dynamics simulation. Acta Physica Sinica, 2020, 69(22): 226102. doi: 10.7498/aps.69.20200781
    [9] Wang Xiao-Yu, Bi Wei-Hong, Cui Yong-Zhao, Fu Guang-Wei, Fu Xing-Hu, Jin Wa, Wang Ying. Synthesis of photonic crystal fiber based on graphene directly grown on air-hole by chemical vapor deposition. Acta Physica Sinica, 2020, 69(19): 194202. doi: 10.7498/aps.69.20200750
    [10] Gu Ji-Wei, Wang Jin-Cheng, Wang Zhi-Jun, Li Jun-Jie, Guo Can, Tang Sai. Phase-field crystal modelling the nucleation processes of graphene structures on different substrates. Acta Physica Sinica, 2017, 66(21): 216101. doi: 10.7498/aps.66.216101
    [11] Li Hao, Fu Zhi-Bing, Wang Hong-Bin, Yi Yong, Huang Wei, Zhang Ji-Cheng. Preperetions of bi-layer and multi-layer graphene on copper substrates by atmospheric pressure chemical vapor deposition and their mechanisms. Acta Physica Sinica, 2017, 66(5): 058101. doi: 10.7498/aps.66.058101
    [12] Yang Hui-Hui, Gao Feng, Dai Ming-Jin, Hu Ping-An. Research progress of direct synthesis of graphene on dielectric layer. Acta Physica Sinica, 2017, 66(21): 216804. doi: 10.7498/aps.66.216804
    [13] Dong Yan-Fang, He Da-Wei, Wang Yong-Sheng, Xu Hai-Teng, Gong Zhe. Synthesis of large size monolayer MoS2 with a simple chemical vapor deposition. Acta Physica Sinica, 2016, 65(12): 128101. doi: 10.7498/aps.65.128101
    [14] Wang Bin, Feng Ya-Hui, Wang Qiu-Shi, Zhang Wei, Zhang Li-Na, Ma Jin-Wen, Zhang Hao-Ran, Yu Guang-Hui, Wang Gui-Qiang. Hydrogen etching of chemical vapor deposition-grown graphene domains. Acta Physica Sinica, 2016, 65(9): 098101. doi: 10.7498/aps.65.098101
    [15] Feng Qiu-Ju, Xu Rui-Zhuo, Guo Hui-Ying, Xu Kun, Li Rong, Tao Peng-Cheng, Liang Hong-Wei, Liu Jia-Yuan, Mei Yi-Ying. Influences of the substrate position on the morphology and characterization of phosphorus doped ZnO nanomaterial. Acta Physica Sinica, 2014, 63(16): 168101. doi: 10.7498/aps.63.168101
    [16] Han Lin-Zhi, Zhao Zhan-Xia, Ma Zhong-Quan. Process parameters of large single crystal graphene prepared by chemical vapor deposition. Acta Physica Sinica, 2014, 63(24): 248103. doi: 10.7498/aps.63.248103
    [17] Wang Lang, Feng Wei, Yang Lian-Qiao, Zhang Jian-Hua. The pre-treatment of copper for graphene synthesis. Acta Physica Sinica, 2014, 63(17): 176801. doi: 10.7498/aps.63.176801
    [18] Wang Wen-Rong, Zhou Yu-Xiu, Li Tie, Wang Yue-Lin, Xie Xiao-Ming. Research on synthesis of high-quality and large-scale graphene films by chemical vapor deposition. Acta Physica Sinica, 2012, 61(3): 038702. doi: 10.7498/aps.61.038702
    [19] Guo Ping-Sheng, Chen Ting, Cao Zhang-Yi, Zhang Zhe-Juan, Chen Yi-Wei, Sun Zhuo. Low temperature growth of carbon nanotubes by chemical vapor deposition for field emission cathodes. Acta Physica Sinica, 2007, 56(11): 6705-6711. doi: 10.7498/aps.56.6705
    [20] Yan Gui-Shen, Li He-Jun, Hao Zhi-Biao. . Acta Physica Sinica, 2002, 51(2): 326-331. doi: 10.7498/aps.51.326
Metrics
  • Abstract views:  20824
  • PDF Downloads:  362
  • Cited By: 0
Publishing process
  • Received Date:  01 March 2019
  • Accepted Date:  27 March 2019
  • Available Online:  01 May 2019
  • Published Online:  05 May 2019

/

返回文章
返回