Dual-band filter design based on hourglass-shaped spoof surface plasmon polaritons and interdigital capacitor structure

Luo Yu-Xuan; Cheng Yong-Zhi; Chen Fu; Luo Hui; Li Xiang-Cheng

doi:10.7498/aps.72.20221984

Abstract

In this paper, a dual passband filter with spoof surface plasmon polaritons (SSPPs) and interdigital capacitance structure loaded on a coplanar waveguide (CPW) is proposed. First, the hourglass-shaped SSPP unit-cell structure and the interdigital capacitor structure are introduced on the coplanar waveguide transmission line to obtain high fractional bandwidth and low insertion loss passband characteristics. Then, a dual passband filter is formed by loading the interdigital capacitor loop resonator to excite the trapped waves. The simulation results show that the proposed dual passband filter has excellent upper sideband rejection and dual passband filtering performance. The fractional bandwidths of the two passbands of the design are 46.8% (1.49–2.40 GHz) and 15.1% (2.98–3.63 GHz), respectively, which can achieve more than –40 dB rejection in a range of 4.77–7.48 GHz. The upper cutoff frequency and lower cutoff frequency of the two passbands can be independently regulated by changing the structural parameters of the proposed filter. In order to gain a more in-depth understanding of the operating principle of the dual passband filter, the corresponding dispersion curves and electric field distribution, LC equivalent circuit analysis are given. Finally, the prototype of the designed filter is fabricated according to the optimized parameter values. The experimental results are in good agreement with the simulation ones, indicating that the proposed dual-passband filter is of great importance in implementing microwave integrated circuits .

Keywords:

Authors and contacts

1.
School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan 430081, China
2.
State Key Laboratory of Refractory Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China

Corresponding author: Cheng Yong-Zhi, chengyz@wust.edu.cn

Funds: Supported by Hubei Provincial Natural Science Foundation Innovation Group Project (Grant No. 2020CFA038) and Hubei Provincial Key R&D Project (Grant No. 2020BAA028).

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References

[1]	Zhang R, Zhu L 2013 IEEE Trans. Microwave Theory Tech. 61 1820 Google Scholar
[2]	Gomez-Garcia R, Yang L, Munoz-Ferreras J M, Psychogiou D 2019 IEEE Microw. Wireless Compon. Lett. 29 453
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[7]	Bartlett C, Hoft M 2021 Electron. Lett. 57 328 Google Scholar
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[12]	Li D, Wang J A, Liu Y, Chen Z 2020 IEEE Access 8 25588 Google Scholar
[13]	张德伟, 王树兴, 刘庆, 周东方, 张毅, 吕大龙, 吴瑛 2018 电子学报 46 387 Google Scholar Zhang D W, Wang S X, Liu Q, Zhou D F, Zhang Y, Lv D L, Wu Y 2018 Chin. J. Electron. 46 387 Google Scholar
[14]	Chen R S, Zhu L, Lin J Y, Wong S W, He Y 2020 IEEE Microw. Wireless Compon. Lett. 30 573 Google Scholar
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[16]	石光明, 马震远, 麦智荣, 林智勇 2020 电子学报 48 1641 Google Scholar Shi G M, Ma Z Y, Mai Z Y, Lin Z Y 2020 Chin. J. Electron. 48 1641 Google Scholar
[17]	苏林, 马力, 孙炳文, 郭圣明 2014 物理学报 10 104302 Google Scholar Su L, Ma L, Sun B W, Guo S M 2014 Acta Phys. Sin. 10 104302 Google Scholar
[18]	盛世威, 李康, 孔繁敏, 岳庆炀, 庄华伟, 赵佳 2015 物理学报 10 108402 Google Scholar Sheng S W, Li K, Kong F M, Yue Q Y, Zhuang H W, Zhao J 2015 Acta Phys. Sin. 10 108402 Google Scholar
[19]	Jaiswal R K, Pandit N, Pathak N P 2019 IEEE Photon. Technol. Lett. 31 1293 Google Scholar
[20]	Feng W, Feng Y, Yang W, Che W, Xue Q 2019 IEEE Trans. Plasma Sci. 47 2832 Google Scholar
[21]	吴梦, 梁西银, 颜昌林, 祁云平 2019 激光与光电子学进展 56 202417 Google Scholar Meng W, Liang X Y, Yan C L, Qi Y P 2019 Laser Optoelectron. Prog. 56 202417 Google Scholar
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[29]	Sun S P, Cheng Y Z, Luo H, Chen F, Li X C 2022 Plasmonics 18 165 Google Scholar

Cited By

图 1 提出的宽带带通滤波器原型的几何结构　(a)整体结构; (b)沙漏型SSPPs单元结构; (c)交指电容结构

Figure 1. Geometry of the proposed broadband bandpass filter prototype: (a) The whole structure; (b) the hourglass-shaped SSPPs unit cell structure; (c) interdigital structure.

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图 2 仿真S参数　(a)SSPPs单元中间不加载交指电容结构; (b)设计的宽带带通滤波器

Figure 2. Simulated S-parameters: (a) Without loading the cross-finger capacitor structure in the middle of SSPPs unit; (b) the designed broadband bandpass filter.

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图 3 加载了IDCLLRs的双带通滤波器几何结构　(a)整体结构; (b) IDCLLRs结构及其等效电路

Figure 3. Geometry of the proposed dual-bandpass filter with loaded IDCLLRs: (a) The whole structure, (b) the IDCLLRs and its equivalent circuit diagram.

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图 4 (a)不同指长l_r的IDCLLRs的传输系数; (b)加载了IDCLLRs的双带通滤波器的仿真S参数

Figure 4. (a) The simulated transmission coefficients of the IDCLLRs with different finger lengths l_r, (b) the simulated S-parameters of the proposed dual-bandpass filter.

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图 5 加载了两个IDCLLRs的双带通滤波器的等效电路模型

Figure 5. Equivalent circuit of the proposed dual-bandpass filter with two IDCLLRs.

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图 6 EM仿真和LC电路仿真的S参数的对比

Figure 6. Comparison of S-parameters obtained from EM simulation and LC circuit simulation.

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图 7 沙漏形SSPPs单元结构的色散曲线　(a)不同高度a; (b)不同宽度b

Figure 7. Dispersion diagrams of the hourglass-shaped SSPP unit-cell with different (a) height a, (b) width b.

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图 8 不同　(a) SSPPs单元高度a, (b) SSPPs单元宽度b, (c)IDCLLRs的指长l_r和(d) SSPPs单元交指电容结构间隙宽度s的模拟传输系数.

Figure 8. Simulated transmission coefficients with different (a) SSPPs unit-cell heights a, (b) SSPPs unit-cell widths b, (c) finger lengths l_r of IDCLLRs, and (d) SSPPs unit-cell interdigital structure gap widths s.

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图 9 分别在 (a) 1.9 GHz, (b) 2.7 GHz和(c) 3.5 GHz时, 所提出双带通滤波器的金属层的模拟电场(E_x)分布

Figure 9. The simulated electric field (E_x) distributions of the metallic layer of the proposed dual-bandpass filter at (a) 1.9 GHz, (b) 2.7 GHz, and (c) 3.5 GHz, respectively.

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图 10 (a) 加工的双通带滤波器样品的照片; (b)仿真与测试的传输、反射系数的对比

Figure 10. (a) The photograph of the fabricated microwave dual-bandpass filter sample; (b) the comparisons of the simulated and measured transmission and reflection coefficients.

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表 1 拟议的双通带滤波器的尺寸参数

Table 1. Dimensional parameters of the proposed dual-bandpass filter.

参数	w₁	w₂	w₃	g	g₁	g₂	a	b	c
值/mm	3.0	14.9	60.0	0.1	0.1	0.3	4.1	7.5	14.5
参数	l	w	s	l_s	l_r	l_w	l_x	l_y	l_z
值/mm	1.5	0.2	0.2	0.1	3.0	0.1	7.8	2.3	1.0

DownLoad: CSV

表 2 仿真与测试数据的对比

Table 2. Simulation versus measured data.

	f₀/GHz	IL_MAX/dB	RL_MAX/dB	FBW/%	带外抑制
仿真(Sim.)	1.95/3.31	–1.25/–1.20	–14.3/–10.8	46.7/19.6	–40 dB@ 4.77—7.48 GHz
测量(Mea.)	2.01/3.15	–1.31/–2.50	–14.1/–11.1	51.7/19.0	–35 dB@ 4.30—7.70 GHz

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表 3 先进的双通带滤波器对比

Table 3. State-of-the-art dual-bandpass filter comparison.

参考文献	f₀/GHz	IL/dB	FBW/%	带外抑制	是否可调
[2]	1.57/2.38	1.2/2.0	9.9/6.5	–30 dB@ 2.6—5.1 GHz	否
[4]	4.16/7.22	0.4/0.7	48.1/34.9	–20 dB@ 8.6—9.0 GHz	否
[8]	2.30/3.20	1.1/1.7	11.3/9.4	–20 dB@ 3.4—4.0 GHz	是
[12]	2.40/5.20	0.4/1.0	10.6/13.5	–15 dB@ 5.8—12.4 GHz	否
[14]	0.19/0.27	1.75/1.1	1.6/2.1	–25 dB@ 0.27—0.33 GHz	是
本文工作	2.01/3.15	1.3/2.5	51.7/19.0	–35 dB@ 4.3—7.7 GHz	是

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[1]	Zhang R, Zhu L 2013 IEEE Trans. Microwave Theory Tech. 61 1820 Google Scholar
[2]	Gomez-Garcia R, Yang L, Munoz-Ferreras J M, Psychogiou D 2019 IEEE Microw. Wireless Compon. Lett. 29 453
[3]	Mansour R R, Laforge P D 2016 IEEE MTT-S International Microwave Symposium San Francisco, May 22–27, 2016 p1
[4]	Qu L L, Zhang Y H, Li Q, Liu J W, Fan Y 2020 International Conference on Microwave and Millimeter Wave Technology Shanghai, September 20–23, 2020 p1
[5]	Amari S, Bekheit M 2008 IEEE Trans. Microwave Theory Tech. 56 1938 Google Scholar
[6]	Nocella V, Pelliccia L, Tomassoni C, Sorrentino R 2016 IEEE Microw. Wireless Compon. Lett. 26 310 Google Scholar
[7]	Bartlett C, Hoft M 2021 Electron. Lett. 57 328 Google Scholar
[8]	Li K, Kang G Q, Liu H, Zhao Z Y 2020 Microsyst. Technol. 26 913 Google Scholar
[9]	Duarte G, Silva A, Oliveira C, Dmitriev V, Melo G, Castro W 2021 IEEE MTT-S International Microwave and Optoelectronics Conference Fortaleza, October 24–27, 2021 p1
[10]	Miek D, Boe P, Kamrath F, Hoft M 2021 IEEE MTT-S International Microwave Filter Workshop Perugia, November 17–19, 2021 p73
[11]	Litvintsev S, Rozenko S 2021 IEEE 3rd Ukraine Conference on Electrical and Computer Engineering Lviv, August 26–28, 2021 p121
[12]	Li D, Wang J A, Liu Y, Chen Z 2020 IEEE Access 8 25588 Google Scholar
[13]	张德伟, 王树兴, 刘庆, 周东方, 张毅, 吕大龙, 吴瑛 2018 电子学报 46 387 Google Scholar Zhang D W, Wang S X, Liu Q, Zhou D F, Zhang Y, Lv D L, Wu Y 2018 Chin. J. Electron. 46 387 Google Scholar
[14]	Chen R S, Zhu L, Lin J Y, Wong S W, He Y 2020 IEEE Microw. Wireless Compon. Lett. 30 573 Google Scholar
[15]	朱登玮, 曾瑞敏, 唐泽恬, 丁召, 杨晨 2020 激光与光电子学进展 57 172401 Google Scholar Zhu D W, Zeng R M, Tang Z T, Ding Z, Yang C 2020 Laser Optoelectron. Prog. 57 172401 Google Scholar
[16]	石光明, 马震远, 麦智荣, 林智勇 2020 电子学报 48 1641 Google Scholar Shi G M, Ma Z Y, Mai Z Y, Lin Z Y 2020 Chin. J. Electron. 48 1641 Google Scholar
[17]	苏林, 马力, 孙炳文, 郭圣明 2014 物理学报 10 104302 Google Scholar Su L, Ma L, Sun B W, Guo S M 2014 Acta Phys. Sin. 10 104302 Google Scholar
[18]	盛世威, 李康, 孔繁敏, 岳庆炀, 庄华伟, 赵佳 2015 物理学报 10 108402 Google Scholar Sheng S W, Li K, Kong F M, Yue Q Y, Zhuang H W, Zhao J 2015 Acta Phys. Sin. 10 108402 Google Scholar
[19]	Jaiswal R K, Pandit N, Pathak N P 2019 IEEE Photon. Technol. Lett. 31 1293 Google Scholar
[20]	Feng W, Feng Y, Yang W, Che W, Xue Q 2019 IEEE Trans. Plasma Sci. 47 2832 Google Scholar
[21]	吴梦, 梁西银, 颜昌林, 祁云平 2019 激光与光电子学进展 56 202417 Google Scholar Meng W, Liang X Y, Yan C L, Qi Y P 2019 Laser Optoelectron. Prog. 56 202417 Google Scholar
[22]	Chen L, Liao D G, Guo X G, Zhao J Y, Zhu Y M, Zhuang S L 2019 Front Inform. Tech. El. 20 591 Google Scholar
[23]	Shang H, Liu Y, Li Z, Tian Y 2020 Int. J. RF Microw. C. E. 32 e22440
[24]	Wang Z X, Zhang H C, Lu J, Xu P, Wu L W, Wu R Y, Cui T J 2018 J. Phys. D Appl. Phys. 52 025107 Google Scholar
[25]	Chen Z M, Liu Y H, Wang J, Li Y, Zhu J H, Jiang W, Shen X P, Zhao L, Cui T J 2019 IEEE Access 8 4311 Google Scholar
[26]	Yan S, Wang J, Kong X, Xu R, Chen Z M, Ma J Y, Zhao L 2022 IEEE Photonics Technol. Lett. 34 375 Google Scholar
[27]	Peng Y, Zhang W X 2010 Microw. Opt. Techn. Lett. 52 166 Google Scholar
[28]	Luo Y X, Yu J W, Cheng Y Z, Chen F, Luo H 2022 Appl. Phys. A 128 1 Google Scholar
[29]	Sun S P, Cheng Y Z, Luo H, Chen F, Li X C 2022 Plasmonics 18 165 Google Scholar

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