Dual-mode low noise large range magnetic sensor based on giant magnetoimpedance effect

WEN Tao; MA Yuhang; WANG Dequan; CHEN Haoran; LI Yanfang; XU Yang; WANG Zhiguang

doi:10.7498/aps.74.20241498

Abstract

Magnetic sensors are widely used in the fields of navigation, transportation, robotics, automation, and medical equipment, and the performance requirements of sensors are getting higher and higher. In this work, a bimodal magnetic sensor with two operating modes, which has the advantages of large range and low noise, is proposed. The sensor consists of a 640 μH core-wound inductor in series with a 100 pF capacitor. When the external magnetic field changes, the magnetization state of the iron core in the inductor will change, the inductance value will change accordingly. The resonant frequency and impedance value of the sensor will also change with the magnetic field. In this work, the giant magnetic impedance characteristics of an RLC series circuit are analyzed, and the relationship between magnetic permeability, inductance value, and external magnetic field is established, and the series resonant frequency of the circuit is simulated to calculate the characteristics of the circuit with respect to the inductance variation. Then, two testing systems are set up to test the relationship between resonance frequency and magnetic field, as well as the noise characteristics of the sensor. In the impedance mode, the effects of capacitance, drive signal frequency, and static bias magnetic field on the sensor noise floor are first analyzed to determine the optimal parameters of the sensor. When the series capacitance of the sensor is 100 pF, the drive signal frequency will be 1 MHz and the static bias magnetic field will be 7.66 Oe. The sensor has the optimal performance with an equivalent noise floor of about $ {200}\;{\text{pT/}}\sqrt {{\text{Hz}}} @1 \;{\text{Hz}} $, an impedance rate of change sensitivity of 160.6%/Oe, and a linear range of about 2 Oe. In the frequency mode, the sensor operates linearly up to 25 Oe. A logistic regression model is used to fit the resonant frequency to the magnetic field variation, and the fitted value reaches 0.9974. When the static bias magnetic field is about 7.66 Oe, the sensor sensitivity will be about 47 kHz/Oe. Moreover, compared with other common types of magnetic sensors on the market, this sensor has the commercial component cost of only ¥10, and excellent performance, and huge market potential.

Keywords:

Authors and contacts

1.
North Automatic Control Technology Institute, Taiyuan 030006, China
2.
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
3.
Yangtze Optical Electronic Co., Ltd., Wuhan 430071, China
4.
School of Communication Engineering, Hangzhou Dianzi University, Hangzhou 310000, China

Corresponding author: WANG Zhiguang, zgwang18@xjtu.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3206800) and the National Natural Science Foundation of China (Grant No. 62371385).

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References

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[2]	Du A M, Zhang Y, Li H Y, Qiao D H, Yi Z, Zhang T L, Meng L F, Ge Y S, Luo H, Zhao L, Sun S Q, Ou J M, Li Z, Feng X, Dai J L 2020 Space Sci. Rev. 216 135 Google Scholar
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[23]	Vazquez M, Knobel M, Sanchez M L, Valenzuela R, Zhukov A P 1997 Sens. Actuator A Phys. 59 20 Google Scholar
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Cited By

图 1 电感与电容串联后的等效电路模型

Figure 1. Equivalent circuit model of inductor and capacitor in series.

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图 2 等效电路串联谐振仿真　(a) RLC串联等效电路模型仿真结果; (a) 串联谐振频率随电感的变化

Figure 2. Equivalent circuit series resonance simulation: (a) Simulation results obtained by RLC series equivalent circuit model; (b) variation of series resonance frequency with inductance.

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图 3 电感元件特征　(a) 电感实物图; (b) 电感值随磁场的变化

Figure 3. Inductor characteristic: (a) Physical drawings of inductors; (b) variation of inductance value with magnetic field.

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图 4 谐振频率-磁场传感器测试平台

Figure 4. Resonant frequency-magnetic field sensor test platform.

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图 5 阻抗-磁场传感器测试平台

Figure 5. Impedance-magnetic field sensor test platform.

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图 6 不同条件下的最小等效磁噪声与激励信号频率关系　(a) 电容为91 pF; (b) 电容为100 pF; (c) 电容为110 pF; (d) 电容为120 pF

Figure 6. Relationship between minimum equivalent magnetic noise and frequency of excitation signal under different conditions: (a) The capacitance is 91 pF; (b) the capacitance is 100 pF; (c) the capacitance is 110 pF; (d) the capacitance is 120 pF.

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图 7 GMI传感器特性　(a)不同频率激励信号时GMI传感器的阻抗随磁场的变化; (b) 不同频率激励信号时GMI传感器阻抗变化率随磁场的变化; (c) 不同频率激励信号时GMI传感器阻抗变化率灵敏度随磁场的变化; (d) 在施加3 nT和300 pT的微弱磁信号时GMI传感器的等效磁噪声幅度谱; (e) 传感器阻抗随外加磁场的变化以及线性拟合曲线; (f) 施加1 Hz正弦交流磁信号时传感器的阻抗变化量随磁场强度的变化

Figure 7. GMI sensor characteristics: (a) The impedance of GMI sensor vs. magnetic field for different frequency excitation signals; (b) the impedance variation of GMI sensor vs. magnetic field for different frequency excitation signals; (c) impedance change rate sensitivity of GMI sensor vs. magnetic field for different frequency excitation signals; (d) the equivalent magnetic noise amplitude spectrum of the GMI sensor when a weak magnetic signal of 3 nT or 300 pT is applied; (e) sensor impedance vs. applied magnetic field and corresponding linear fitting curve; (f) sensor impedance variation vs. magnetic field intensity when 1 Hz sinusoidal AC magnetic signal is applied.

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图 8 磁传感器谐振频率随磁场强度的变化及拟合曲线

Figure 8. Resonance frequency of magnetic sensor vs. magnetic field intensity curve and corresponding fitting curve.

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图 9 谐振频率-磁场数值拟合曲线及灵敏度曲线

Figure 9. Resonance frequency vs. magnetic field fitting curve and sensitivity curve.

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表 1 最小等效磁噪声及其对应参数

Table 1. Minimum equivalent magnetic noise and its corresponding parameters.

电容值/pF	最小等效磁噪声/nT	激励信号频率/MHz	偏置磁场/Oe
91	0.55	0.8	7.66
100	0.49	1	7.66
110	0.75	1	5.9
120	0.59	1	7.66

DownLoad: CSV

表 2 双模态磁传感器与商用磁传感器对比

Table 2. Comparison of dual-mode magnetic sensor and commercial magnetic sensor.

类型	型号	厂家	本底噪声/ (nT@1 Hz)	量程/ ±Oe	灵敏度	截止频率	价格￥
AMR	MMC5983MA	美新半导体	40	8	—	1 kHz	~34
AMR	HMC1001	霍尼韦尔	0.5	5	3.2 mV/(V·Oe)	5 MHz	~100
GMR	AA002	NVE	2	15	36 mV/(V·Oe)	1 MHz	~150
TMR	TMR2901	多维	2	8	25 mV/(V·Oe)	—	~350
TMR	TLI5590-A6W	英飞凌	—	50	1.85 mV/(V·Oe)	5 kHz	~20
TMR	CT815X	Allegro	—	80	5 mV/(V·Oe)	100 Hz	~10
Microfluxgate	DRV425	德州仪器	4	20	1.22 mA/Oe	32 kHz	~30
Fluxgate	Mag651	Bartington	~0.02	0.6	5 V/Oe	5 Hz	>35000
Hall	DRV5055 A1/Z1	德州仪器	130	210	10 mV/Oe	20 kHz	~10
GMI	MI-CB-1DJ	Aichi	~0.1	0.02	500 V/Oe	10 kHz	~10000
GMI	GC-CC-101A	国创智能	~0.06	0.6	—	2 kHz	~5000
LC串联磁传感器	阻抗模式	—	~0.2	6—8 Oe	160.6%/Oe	—	~10
LC串联磁传感器	频率模式	—	—	5—30 Oe	47 kHz/Oe(max)	—	~10

DownLoad: CSV

[1]	Auster H U, Glassmeier K H, Magnes W, Aydogar O, Baumjohann W, Constantinescu D, Fischer D, Fornacon K H, Georgescu E, Harvey P, Hillenmaier O, Kroth R, Ludlam M, Narita Y, Nakamura R, Okrafka K, Plaschke F, Richter I, Schwarzl H, Stoll B, Valavanoglou A, Wiedemann M 2008 Space Sci. Rev. 141 235 Google Scholar
[2]	Du A M, Zhang Y, Li H Y, Qiao D H, Yi Z, Zhang T L, Meng L F, Ge Y S, Luo H, Zhao L, Sun S Q, Ou J M, Li Z, Feng X, Dai J L 2020 Space Sci. Rev. 216 135 Google Scholar
[3]	Fimbombaya H S, Mvungi N H, Hamisi N Y, Iddi H U 2018 Modell. Simul. Eng. 2018 2591304 Google Scholar
[4]	Kim H J, Hirayama H, Kim S, Han K J, Zhang R, Choi J W 2017 IEEE Access 5 21264 Google Scholar
[5]	Kuwahata A, Tanaka R, Matsuda S, Amada E, Irino T, Mayanagi S, Chikaki S, Saito I, Tanabe N, Kawakubo H, Takeuchi H, Kitagawa Y, Kusakabe M, Sekino M 2020 Sci. Rep. 10 1798 Google Scholar
[6]	Limes M E, Foley E L, Kornack T W, Caliga S, McBride S, Braun A, Lee W, Lucivero V G, Romalis M V 2020 Phys. Rev. Appl. 14 011002 Google Scholar
[7]	Liu X Y, Liu C H, Han W, Pong P W T 2019 IEEE Sens. J. 19 1683 Google Scholar
[8]	Wang S X, Peng D L, Wu Z Y 2019 IEEE Sens. J. 19 9818 Google Scholar
[9]	Sekino M, Kuwahata A, Ookubo T, Shiozawa M, Ohashi K, Kaneko M, Saito I, Inoue Y, Ohsaki H, Takei H, Kusakabe M 2018 Sci. Rep. 8 1195 Google Scholar
[10]	Tsukada K, Hayashi M, Nakamura Y, Sakai K, Kiwa T 2018 IEEE Trans. Magn. 54 6202205 Google Scholar
[11]	Ennen I, Kappe D, Rempel T, Glenske C, Hütten A 2016 Sensors 16 904 Google Scholar
[12]	韩秀峰, 张雨, 丰家峰, 陈川, 邓辉, 黄辉, 郭经红, 梁云, 司文荣, 江安烽, 魏红祥 2022 物理学报 71 238502 Google Scholar Han X F, Zhang Y, Feng J F, Chen C A, Deng H, Huang H, Guo J H, Liang Y, Si W R, Jiang A F, Wei H X 2022 Acta Phys. Sin. 71 238502 Google Scholar
[13]	Han X F, Zhang Y, Wang Y Z, Huang L, Ma Q L, Liu H F, Wan C H, Feng J F, Yin L, Yu G Q, Yu T, Yan Y 2021 Chin. Phys. Lett. 38 128501 Google Scholar
[14]	Khan M A, Sun J, Li B D, Przybysz A, Kosel J 2021 Eng. Res. Express 3 022005 Google Scholar
[15]	Lenz J, Edelstein A S 2006 IEEE Sens. J. 6 631 Google Scholar
[16]	Narod B B, Miles D M 2024 Geosci. Instrum. Methods Data Syst. 13 131 Google Scholar
[17]	Wang Z G, Wen T, Su W, Hu C J, Chen Y C, Hu Z Q, Wu J G, Zhou Z Y, Liu M 2021 IEEE Trans. Ind. Electron. 68 7577 Google Scholar
[18]	Panina L V, Mohri K 1994 Appl. Phys. Lett. 65 1189 Google Scholar
[19]	Phan M H, Peng H X 2008 Prog. Mater Sci. 53 323 Google Scholar
[20]	Kurlyandskaya G V, Sánchez M L, Hernando B, Prida V M, Gorria P, Tejedor M 2003 Appl. Phys. Lett. 82 3053 Google Scholar
[21]	Panina L V, Mohri K, Bushida K, Noda M 1994 J. Appl. Phys. 76 6198 Google Scholar
[22]	Wen T, Wang Z G, Du Q, Su W, Guan M M, Zhao, S S, Wu J, Hu Z Q, Zhou Z Y, Liu M 2022 Adv. Mater. Technol. 7 2100919 Google Scholar
[23]	Vazquez M, Knobel M, Sanchez M L, Valenzuela R, Zhukov A P 1997 Sens. Actuator A Phys. 59 20 Google Scholar
[24]	Butta M, Yamashita S, Sasada I 2011 IEEE Trans. Magn. 47 3748 Google Scholar
[25]	Malatek M, Dufay B, Saez S, Dolabdjian C 2013 Sens. Actuator A Phys. 204 20 Google Scholar
[26]	Malátek M, Kraus L 2010 Sens. Actuator A Phys. 164 41 Google Scholar
[27]	Dufay B, Saez S, Dolabdjian C P, Yelon A, Ménard D 2013 IEEE Sens. J. 13 379 Google Scholar
[28]	Ding L H, Saez S, Dolabdjian C, Melo L G C, Yelon A, Ménard D 2009 IEEE Sens. J. 9 159 Google Scholar
[29]	Dufay B, Saez S, Dolabdjian C, Yelon A, Ménard D 2013 IEEE Trans. Magn. 49 85 Google Scholar
[30]	Dufay B, Saez S, Dolabdjian C P, Yelon A, Ménard D 2011 IEEE Sens. J. 11 1317 Google Scholar
[31]	Melo L G C, Ménard D, Yelon A, Ding L, Saez S, Dolabdjian C 2008 J. Appl. Phys. 103 033903 Google Scholar
[32]	Traoré P S, Asfour A, Yonnet J P, Dolabdjian C P 2017 IEEE Sens. J. 17 6175 Google Scholar
[33]	Traore P S, Asfour A, Yonnet J P 2021 Sens. Actuator A Phys. 331 112972 Google Scholar
[34]	Jin F, Wang J C, Zhu L, Mo W Q, Dong K F, Song J L 2019 IEEE Sens. J. 19 9172 Google Scholar
[35]	Fernández E, García-Arribas A, Barandiarán J M, Svalov A V, Kurlyandskaya G V, Dolabdjian C P 2015 IEEE Sens. J. 15 6707 Google Scholar
[36]	Kim J Y, Cho I K, Lee H J, Lee J, Moon J I, Kim S M, Kim S W, Ahn S, Kim K 2020 IEEE Access 8 193091 Google Scholar

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