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In recent years, dual-frequency capacitively coupled plasma discharge technology has significant advantages for material processing. In this paper, the one-dimensional PIC/MCC simulation method is used to discuss the influence of low-frequency frequency on the discharge characteristics of capacitively coupled argon/methane plasma driven by dual-frequency (20MHz/100MHz) dipole and by the introduction of an external magnetic field. The simulation results show that when the high-frequency frequency is an integer multiple of the low-frequency frequency, the superposition of high and low frequencies is significant, and the sheath oscillation is more obvious. With the increase of low-frequency frequency, the electron density, charge density, high-energy electron density and electron heating rate all increase. The electron density increases to 14% with the low-frequency frequency increase. The electron temperature near the sheath shows a downward trend with the increase of low-frequency frequency, dropping by approximately 12%. The electron energy probability distribution (EEPF) shows a double Maxwell distribution. When the low-frequency frequency increases, the layout numbers of both low-energy electrons and high-energy electrons increase. Meanwhile, the influence of the low-frequency frequency increase on the various ions density, and the Angle and energy distribution of CH4+ and CH3+ particles reaching the plates are discussed.
In the Ar/CH4 plasma driven by dual-frequency by adding external magnetic field, the controllability of ion energy can effectively optimize the structure and performance of carbon-containing films. By regulating discharge parameters to control the ions incident Angle on the substrate, carbon-containing atoms can be deposited in a specific direction, thereby achieving the directional growth of carbon-containing films. This is significant for the preparation of graphene films, carbon nanotube arrays, etc. Meanwhile, the regulation of the ion incident Angle is helpful to improve the binding force between the carbon film and the substrate. This study found that the average energy of the ions reached its peak when the Angle of the ions was around 0.32. This peak was most significant at a low-frequency frequency of 15 MHz. The results in this paper provides a theoretical reference for the preparation of carbon films.-
Keywords:
- CCP discharge /
- Ar/CH4 plasma /
- PIC/MCC model
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[1] Li Y M, Mann D, Rolandi M, Kim W 2004 Nano Lett. 4317
[2] Donnelly V M, Kornblit A 2013 J. Vac. Sci. Technol. A. 31050825
[3] Jung C O, Chi K K, Hwang B G, Moon J T, Lee M Y, Lee J G 1999 Thin Solid Films. 341112
[4] Schulze J, Gans T, O'Connell D, Czarnetzki U, Ellingboe A R, Turner M M 2007 J. Phys. D: Appl. Phys. 407008
[5] Boyle P C, Ellingboe A R, Turner M M 2004 J. Phys. D Appl. Phys. 37697
[6] Robiche J, Boyle P C, Turner M M, Ellingboe A R 2003 J. Phys. D: Appl. Phys. 361810
[7] Goto H H, Löwe H-D, Ohmi T 1992 J. Vac. Sci. Technol. A. 103048
[8] Goto H H, Löwe H-D, Ohmi T 1993 IEEE Trans. Semicond. Manuf. 658
[9] Tsai W, Mueller G, Lindquist R, Frazier B, Vahedi V 1996 J. Vac. Sci. Technol. B. 143276
[10] Sharma S, Turner M M 2014 J. Phys. D: Appl. Phys. 47285201
[11] Kim H C, Lee J K, Shon J W 2003 Phys. Plasmas. 104545
[12] Yang S, Zhang W, Shen J, Liu H, Tang C, Xu Y, Cheng J, Shao J, Xiong J, Wang X, Liu H, Huang J, Zhang X, Lan H, Li Y 2024 AIP Adv. 14065104
[13] Sharma S, Sirse N, Turner M M, Ellingboe A R 2018 Phys. Plasmas. 25063501
[14] Yin G Q, Gao S S, Liu Z H, Yuan Q H 2022 Phys. Lett. A. 426127910
[15] Gao S S 2022 MSc (Lanzhou: Northwest Normal University) (in Chinese) [高闪闪2022硕士学位论文(兰州: 西北师范大学) ]
[16] Yang S L, Zhang Y, Wang H Y, Cui J W, Jiang W 2017 Plasma Processes Polym. 141700087
[17] Yang S L, Chang L, Zhang Y, Jiang W 2018 Plasma Sources Sci. Technol. 27035008
[18] Yan M H, Wu H H, Wu H, Peng Y L, Yang S L 2024 J Vac Sci Technol A. 42053007
[19] Sharma S, Patil S, Sengupta S, Sen A, Khrabrov A, Kaganovich I 2022 Phys. Plasmas. 29063501
[20] Sun J Y, Wen H, Zhang Q Z, Schulze J, Liu Y X, Wang Y N 2022 Plasma Sources Sci. Technol. 31085012
[21] Zheng B C, Wang K L, Grotjohn T, Schuelke T, Fan Q H 2019 Plasma Sources Sci. Technol. 2809LT03
[22] Yang S L, Zhang Y, Wang H Y, Wang S, Jiang W 2017 Phys. Plasmas. 24033504
[23] Liu Y X, Liang Y S, Wen D Q, Bi Z H, Wang Y N 2015 Plasma Sources Sci. Technol. 24025013
[24] Yin G Q, Jiang Y B, Yuan Q H 2024 Mod. Phys. Lett. B. 382450269
[25] Wang J-C, Tian P, Kenney J, Rauf S, Korolov I, Schulze J 2021 Plasma Sources Sci. Technol. 30075031
[26] Birdsall C K 1991 IEEE Trans. Plasma Sci. 1965
[27] Vahedi V, Surendra M 1995 Comput. Phys. Commun. 87179
[28] Verboncoeur J P 2001 J. Comput. Phys. 174421
[29] Shen X Q, Xie Q, Xiao Q Q, Chen Q, Feng Y 2012 Acta Phys. Sin. 61165101(in Chinese) [沈向前, 谢泉, 肖清泉, 陈茜, 丰云2012物理学报61165101]
[30] Jin X L, Yang Z H 2006 Acta Phys. Sin. 555930(in Chinese) [金晓林, 杨中海2006物理学报555930]
[31] Song M Y, Yoon J S, Cho H, Itikawa Y, Karwasz G P, Kokoouline V, Nakamura Y, Tennyson J 2015 J. Phys. Chem. Ref. Data. 44023101
[32] Sun J Y, Zhang Q-Z, Liu J-R, Song Y-H, Wang Y-N 2020 Plasma Sources Sci. Technol. 29114002
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