Proton single-event effects in high-speed polysilicon-emitter bipolar transistors

LI Pei; HAN Chengxiang; HE Zijie; DONG Zhiyong; HE Huan; HE Chaohui; WEI Jianan

doi:10.7498/aps.74.20250276

Abstract

Deep-trench isolation (DTI) bipolar transistors have been increasingly adopted in high-performance, highly integrated advanced semiconductor devices due to their superior electrical characteristics and isolation capabilities. However, existing research has shown that DTI bipolar transistors exhibit a lower linear energy transfer (LET) threshold for single-event effects (SEEs) and a larger saturated cross-section than traditional structures, making the traditional rectangular parallelepiped (RPP) model unsuitable for such devices.In this study, we investigate the influence of proton incidence angle on single-event effects in high-speed DTI bipolar transistors. Proton multi-angle irradiation experiments reveal that the incidence angle significantly changes the amplitude characteristics of single-event transient voltage pulses at the collector. By introducing a nested sensitive volume in TCAD numerical simulations, the sensitive region of the DTI device is accurately defined. Geant4 simulations further demonstrate that with the increase of proton incidence angle, the integral cross-section of secondary ions in the sensitive volume significantly increases, which is determined to be the primary reason for the voltage amplitudes at the collector and base increasing with augment of tilt angle. This work provides theoretical support for radiation hardening of DTI bipolar transistors against single-event effects.

Keywords:

Authors and contacts

1.
Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China
2.
National Key Laboratory of Analog Intergrated Circuits, Chongqing 400060, China

Corresponding author: WEI Jianan, weijianan93@163.com

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12105252).

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References

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[6]	李志栓, 汤光洪, 於广军, 杨新刚, 杨富宝 2016 半导体技术 41 933 Li Z S, Yang G H, Yu G J, Yang X G, Yang F B 2016 Semicond. Tech. 41 933
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[20]	贾金成, 陆妩, 吴雪, 张培健, 孙静, 王信, 李小龙, 刘默寒, 郭旗, 刘元 2018 微电子学 48 120 Jia J C, Lu W, Wu X, Zhang P J, Sun J, Wang X, Li X L, Liu M H, Guo Q, Liu Y 2018 Microelectronics 48 120
[21]	史一凡 2021 硕士学位论文(西安: 西安理工大学) Shi Y F 2021 M. S. Thesis (Xi’an: Xi’an University of Technology
[22]	冯亚辉 2024 硕士学位论文(湘潭: 湘潭大学) Feng Y H 2024 M. S. Thesis (Xiangtan: Xiangtan University
[23]	张晋新, 郭红霞, 文林, 郭旗, 崔江维, 范雪, 肖尧, 席善斌, 王信, 邓伟 2013 强激光与粒子束 25 2433 Google Scholar Zhang J X, Guo H X, Wen Lin, Guo Q, Cui J W, Fan X, Xiao Y, Xi S B, Wang X Deng W 2013 High Power Laser Part. Beams 25 2433 Google Scholar
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[26]	曾超, 许献国, 钟乐 2023 太赫兹科学与电子信息学报 21 452 Google Scholar Zeng C, Xu X G, Zhong L 2023 J. Terahertz Sci. Electron. Inf. Technol. 21 452 Google Scholar

Cited By

图 1 DPSA NPN晶体管剖面结构

Figure 1. Cross-sectional structure of the DPSA NPN transistor

DownLoad: Full-Size Img PowerPoint

图 2 不同入射角度下质子引起的基极和集电极的瞬态电压脉冲随时间的变化　(a)—(c) 质子0°入射后基极与集电极的瞬态脉冲图像; (d)—(f) 质子45°入射后基极与集电极的瞬态脉冲图像

Figure 2. Transient voltage pulse of base and collector vs. time, induced by protons at different incidence angles: (a)–(c) Transient pulse images of the base and collector after 0° proton incidence; (d)–(f) transient pulse images of the base and collector after 45° proton incidence.

DownLoad: Full-Size Img PowerPoint

图 3 不同入射角度质子引起的集电极与基极瞬态电压脉冲幅度随时间的变化　(a)—(c) 质子以不同角度入射后集电极电压随时间的变化图像; (d)—(f)质子以不同角度入射后基极电压随时间的变化图像

Figure 3. Changes of collector and base transient voltage pulse amplitude with time caused by protons at different incident angles: (a)–(c) Collector voltage variation over time under proton irradiation at different angles; (d)–(f) base voltage variation over time under proton irradiation at different angles.

DownLoad: Full-Size Img PowerPoint

图 4 PE BJT器件模型与电学特性曲线　(a) PE BJT模型仿真截面; (b) 仿真器件与实验器件的Gummel特性曲线

Figure 4. PE BJT device model and electrical characteristics: (a) Cross-sectional view of the PE BJT simulation model; (b) Gummel characteristics comparison between simulated and experimental devices.

DownLoad: Full-Size Img PowerPoint

图 5 TCAD模拟重离子入射位置分布示意图

Figure 5. Distribution of heavy ion incidence in TCAD simulation.

DownLoad: Full-Size Img PowerPoint

图 6 TCAD模拟重离子入射不同位置后集电极电流与电荷收集的变化　(a) 离子不同位置入射时集电极瞬态电流随时间的变化关系; (b) 集电极电荷收集量随离子入射位置的变化关系

Figure 6. TCAD Simulation of collector current and charge collection under heavy-ion strikes at different positions: (a) Transient collector current vs. time for ion strikes at different locations; (b) collected charge as a function of ion strike position.

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图 7 仿真所得PE BJT器件单粒子效应灵敏体积分布　(a) 俯视图; (b) 侧视图

Figure 7. Simulated sensitive volume distribution of the PE BJT device under single-event effects: (a) Top view; (b) side view.

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图 8 质子多角度入射PE BJT灵敏体积Geant4仿真示意图　(a) 0°入射; (b) 30°入射; (c) 45°入射; (d) 60°入射

Figure 8. Geant4 simulation schematic of the sensitive volume in a PE BJT under proton irradiation at different angles: (a) 0° incidence; (b) 30° incidence; (c) 45° incidence; (d) 60° incidence.

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图 9 不同入射角度下质子入射时积分截面随灵敏体积中电离能量沉积的变化

Figure 9. Integrated cross sections of proton induced at different angles vs ionizing energy deposition in the sensitive volume.

DownLoad: Full-Size Img PowerPoint

表 1 不同灵敏区域电荷收集效率

Table 1. Charge collection efficiency in different sensitivity regions.

灵敏区域	电荷收集效率/%
SV1	31.84
SV2	14.14
SV3	7.99

DownLoad: CSV

表 2 60 MeV质子多角度入射后产生的次级粒子信息

Table 2. Information on secondary particles generated by 60 MeV proton incidence at multiple angles.

次级粒子种类 (0°/30°/45°/60°)	最高能量/MeV (0°/30°/45°/60°)	LET/(MeV·cm²·mg^–1) (0°/30°/45°/60°)	射程/μm (0°/30°45°/60°)
Si	8.1/5.9/6.5/6.6	12.4/11.6/11.9/11.9	4.2/3.4/3.6/3.7
P	6.1/3.2/3.3/3.2	11.3/9.2/9.3/9.2	3.5/2.3/2.4/2.3
O	11.1/8.3/2.2/6.7	6.8/7.0/6.5/7.1	7.8/6.1/2.4/5.1
Ne	11.3/7.0/9.9/10.2	8.9/8.6/8.8/8.9	6.9/4.8/6.2/6.4
Na	11.9/9.5/8.9/7.6	10.3/10.2/10.8/10.0	6.7/5.7/5.5/4.9
Mg	11.5/9.3/8.5/9.0	11.4/11.2/11.0/11.1	6.2/5.4/5.1/5.3
Al	8.2/8.3/7.1/7.3	11.3/11.4/11.0/11.1	4.8/4.9/4.4/4.5
F(仅30°入射)	1.2	5.2	1.6

DownLoad: CSV

[1]	Pease R L 2003 IEEE Tran. Nucl. Sci. 50 539 Google Scholar
[2]	李培, 郭红霞, 郭旗, 文林, 崔江维, 王信, 张晋新 2015 物理学报 64 118502 Google Scholar Li P, Guo H X, Guo Q, Wen L, Cui J W, Wang X, Zhang J X 2015 Acta Phys. Sin. 64 118502 Google Scholar
[3]	彭超, 雷志锋, 张鸿, 张战刚, 何玉娟 2022 原子能科学技术 56 2187 Google Scholar Peng C, Lei Z F, Zhang H, Zhang Z G, He Y J 2022 Atom. Energy Sci. Tech. 56 2187 Google Scholar
[4]	Rung R D, Momose H, Nagakubo Y 1982 1982 International Electron Devices Meeting San Francisco, USA, December 13–15, 1982 p237
[5]	罗志伟 2022 硕士学位论文(杭州: 浙江大学) Luo Z W 2022 M. S. Thesis (Hangzhou: Zhejiang University
[6]	李志栓, 汤光洪, 於广军, 杨新刚, 杨富宝 2016 半导体技术 41 933 Li Z S, Yang G H, Yu G J, Yang X G, Yang F B 2016 Semicond. Tech. 41 933
[7]	Reed R A, Marshall P W, Ainspan H, Marshall C J, Kim H S, Cressler J D, Niu G, LaBel K A 2001 2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in Conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No. 01TH8588) p172
[8]	Duzellier S, Falguere D, Mouliere L, Ecoffet R, Buisson J 1995 IEEE Tran. Nucl. Sci. 42 1797 Google Scholar
[9]	Dodd P E, Schwank J R, Shaneyfelt M R, Felix J A, Paillet P, Ferlet-Cavrois V, Baggio J, Reed R A, Warren K M, Weller R A, Schrimpf R D, Hash G L, Dalton S M, Hirose K, Saito H 2007 IEEE Tran. Nucl. Sci. 54 2303 Google Scholar
[10]	黄建国, 韩建伟, 林云龙, 黄治, 路秀琴, 张新, 符长波, 郭继宇, 赵葵 2002 空间科学学报 22 268 Huang J G, Han J W, Lin Y L, Huang Z, Lu X Q, Zhang X, Fu C B, Guo J Y, Zhao K 2002 Chin. J. Space Sci. 22 268
[11]	Enrique J M, Robert A R, Jonathan A P, Michael L A, Ronald D S, Robert A W, Muthubalan V, Niu G F, Akil K S, Ryan D, Gustavo E, Ramkumar K, Jonathan P C, John D C, Paul W M, Gyorgy V 2008 IEEE Tran. Nucl. Sci. 55 1581 Google Scholar
[12]	Stanley D P, Akil K S, Aravind A, Marco B, John D C, Alex G, Gyorgy V, Paul D, Mike M, Robert R, Paul M 2009 IEEE International Reliability Physics Symposium p157–164
[13]	赖祖武, 1998 抗辐射电子学: 辐射效应及加固原理(北京: 国防工业出版社)第16 —18页 Lai Z W 1998 Radiation Effects and Hardening Techniques (Beijing: National Defense Industry Press) pp16–18
[14]	Gregory B L, Gwyn C W 1974 Proce. IEEE 62 1264 Google Scholar
[15]	韩郑生 2011 抗辐射集成电路概论(北京: 清华大学出版社)第8页 Han Z S 2011 Introduction to Radiation Hardened Integrated Circuit (Beijing: Tsinghua University Press) p8
[16]	李培, 贺朝会, 郭红霞, 张晋新, 魏佳男, 刘默寒 2022 太赫兹科学与电子信息学报 20 523 Google Scholar Li P, He C H, Guo H X, Zhang J X, Wei J N, Liu M H 2022 J. Terahertz Sci. Electron. Inf. Technol. 20 523 Google Scholar
[17]	魏佳男, 张小磊, 冯治华, 张培健, 傅婧, 付晓君 2023 微电子学 53 945 Wei J N, Zhang X L, Feng Z H, Zhang J P, Fu Q, Fu X J 2023 Microelectronics 53 945
[18]	Sutton Akil K, Moen K, Cressler J D, Carts M A, Marshall P W, PellishJ A, Ramachandran V, Reed R A, Alles M L, Niu G 2008 Solid-State Electronics 52 1652 Google Scholar
[19]	刘默寒, 陆妩, 贾金成, 施炜雷, 王信, 李小龙, 孙静, 郭旗, 吴雪, 张培健 2018 核技术 41 48 Google Scholar Liu M H, Lu W, Jia J C, Shi W L, Wang X, Li X L, Sun J, Guo Q, Wu X, Zhang P J 2018 Nucl. Techn. 41 48 Google Scholar
[20]	贾金成, 陆妩, 吴雪, 张培健, 孙静, 王信, 李小龙, 刘默寒, 郭旗, 刘元 2018 微电子学 48 120 Jia J C, Lu W, Wu X, Zhang P J, Sun J, Wang X, Li X L, Liu M H, Guo Q, Liu Y 2018 Microelectronics 48 120
[21]	史一凡 2021 硕士学位论文(西安: 西安理工大学) Shi Y F 2021 M. S. Thesis (Xi’an: Xi’an University of Technology
[22]	冯亚辉 2024 硕士学位论文(湘潭: 湘潭大学) Feng Y H 2024 M. S. Thesis (Xiangtan: Xiangtan University
[23]	张晋新, 郭红霞, 文林, 郭旗, 崔江维, 范雪, 肖尧, 席善斌, 王信, 邓伟 2013 强激光与粒子束 25 2433 Google Scholar Zhang J X, Guo H X, Wen Lin, Guo Q, Cui J W, Fan X, Xiao Y, Xi S B, Wang X Deng W 2013 High Power Laser Part. Beams 25 2433 Google Scholar
[24]	张晋新, 郭红霞, 吕玲, 王信, 潘霄宇 2022 太赫兹科学与电子信息学报 20 869 Google Scholar Zhang J X, Guo H X, Lu L, Wang X, Pan X Y 2022 J. Terahertz Sci. Electron. Inf. Technol. 20 869 Google Scholar
[25]	Jonathan A P, Robert A R, Akil K S, Paul W M, Cheryl J M, Ramkumar K, John D C, Marcus H M, Ronald D S, Kevin M W, Brian D S, Niu G F 2007 IEEE Tran. Nucl. Sci. 54 2322
[26]	曾超, 许献国, 钟乐 2023 太赫兹科学与电子信息学报 21 452 Google Scholar Zeng C, Xu X G, Zhong L 2023 J. Terahertz Sci. Electron. Inf. Technol. 21 452 Google Scholar

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Vol. 74, Issue 14 - 2025-07-20

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