光栅局域调控二维光电探测器

雷挺; 吕伟明; 吕文星; 崔博垚; 胡瑞; 时文华; 曾中明

doi:10.7498/aps.70.20201325

摘要

近年来, 二维材料独特的物理、化学和电子特性受到了越来越多的科研人员的关注. 特别是石墨烯、黑磷和过渡金属硫化物等二维材料具有优良的光电性能和输运性质, 使其在下一代光电子器件领域具有广阔的应用前景. 本文将主要介绍二维材料在光电探测领域上的应用优势, 概述光电探测器的基本原理和参数指标, 重点探讨光栅效应与传统光电导效应的区别, 以及提高光增益和光响应度的原因和特性, 进而回顾光栅局域调控在光电探测器中的最新进展及应用, 最后总结该类光电探测器面临的问题及对未来方向的展望.

关键词:

Abstract

In recent years, due to their unique physical, chemical and electronic properties, two-dimensional materials have received more and more researchers’ attention. In particular, the excellent optoelectronic properties and transport properties of two-dimensional materials such as graphene, black phosphorous and transition metal sulfide materials make them have broad application prospects in the field of next-generation optoelectronic devices. In this article, we will mainly introduce the advantages of two-dimensional materials in the field of photodetection, outline the basic principles and parameters of photodetectors, focus on the difference between the grating effect and the traditional photoconductive effect, and the reasons and characteristics of improving optical gain and optical responsivity. Then we review the latest developments and applications of grating local control in photodetectors, and finally summarize the problems faced by the photodetectors of this kind and their prospects for the future.

Keywords:

作者及机构信息

1.
中国科学院苏州纳米技术与纳米仿生研究所, 多功能材料与轻巧系统重点实验室, 苏州　215123

2.
中国科学技术大学纳米技术与纳米仿生学院, 合肥　230026

通信作者: 时文华, whshi2007@sinano.ac.cn

基金项目: 国家重点研发计划(批准号: 2019YFB2005600)和国家自然科学基金(批准号: 51732010)资助的课题

Authors and contacts

1.
Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

2.
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

Corresponding author: Shi Wen-Hua, whshi2007@sinano.ac.cn

Funds: Project supported by the National Key R&D Program of China (Grant No. 2019YFB2005600) and the National Natural Science Foundation of China (Grant No. 51732010)

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施引文献

图 1 光栅效应特性　(a) 光栅效应示意图^[39]; (b) 光照后, 转移特性曲线${I}_{\mathrm{d}\mathrm{s}}\text-{V}_{\mathrm{g}}$, 其中, 黑线、红线和蓝线分别代表暗电流、光栅效应下的光电流以及光栅效应和光电导效应的叠加的光电流; (c)光栅效应器件中的能带排布示意图^[44].

Fig. 1. The characteristics of the photogating effect: (a) Schematic diagram of the photogating effect^[39]; (b) the ${I}_{\mathrm{d}\mathrm{s}}\text-{V}_{\mathrm{g}}$ transfer chara-cteristic curve after illumination. The black line, red line and blue line represent dark current, photocurrent of photogating effect, the superimposed photocurrent of photogating effect and photoconductive effect, respectively; (c) schematic diagram of band arrangement in photogating effect devices^[44].

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图 2 单一二维材料光电探测器　(a) 双层石墨烯异质结中的光激发热载流子隧穿^[6]; (b) p型轻掺杂Si/SiO₂衬底上的石墨烯光电探测器的示意图^[55]; (c) p型InSb衬底上石墨烯场效应晶体管的示意图^[59]; (d) 电荷陷阱模型和简化的能带图^[40]; (e) 光响应度与顶栅V_tg的关系^[65]; (f) 不同衬底下的光响应度^[58]; (g) 在不同入射功率下, 在最大跨导附近实现最大光电流^[35]; (h) 光电流与时间的关系^[67].

Fig. 2. Single two-dimensional material photodetector: (a) Photoexcited hot carrier tunnelling in graphene double-layer heterostructures^[6]; (b) schematic diagram of the graphene photodetector on lightly p-doped silicon/SiO₂ substrate^[55]; (c) schematic diagram of the InSb-based graphene field effect transistor (FET)^[59]; (d) charge trapping model and simplified energy band diagram^[40]; (e) the relationship between photoresponsivity and V_tg^[65]; (f) photoresponsivity under different substrates^[58]; (g) the maximum photocurrent is realized near the maximum transconductance at different incident power^[35]; (h) the relationship between photocurrent and time^[67].

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图 3 石墨烯异质结光电探测器:　(a) 石墨烯/ MoS₂异质结光电探测器的示意图; (b) 石墨烯/Bi₂Te₃异质结光电探测器的示意图; (c) 石墨烯/BP异质结光电探测器的示意图; (d)光响应度与光照强度的关系; (e)光响应度与波长的关系(V_D = –3 V, V_G = –30 V); (f)在波长为980 nm, 光电流和光响应随入射光强的关系 (V_DS = 1 V, V_G = 0 V).

Fig. 3. The photodetectors based on graphene heterostructures: (a) Schematic of device architecture graphene/MoS₂ photodetector^[77]; (b) schematic of the heterostructure phototransistor device^[78]; (c) graphene/BP heterostructure photodetector^[82]; (d) the relationship between photoresponsivity and light intensity^[89]; (e) responsivity as a function of the wavelength (V_D = –3 V, V_G = –30 V)^[85]; (f) photocurrent and photoresponsivity versus incident light power at 980 nm. (V_DS = 1 V, V_G = 0 V)^[86].

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图 4 基于光栅效应的PN异质结光电探测器　(a) PbI₂/WS₂异质结构光电探测器; (b) PbI₂/WS₂光电探测器的光响应时间^[89]; (c) WSe₂ /SnS₂多电极异质结构背栅器件的示意图; (d) WSe₂/SnS₂异质结的能带结构和光激发、层间弛豫过程的示意图^[90]; (e)基于光栅效应的WSe₂/BP光电探测器示意图; (f) 在1 mW/cm²的入射功率密度和0.5 V偏置下, 光增益G和探测率D对不同波长照明的依赖关系^[93]; (g) 在637 nm光照下器件的示意图; (h)顶栅电极侧面和重叠区域之间形成导电通道V_tg; (i)一个调制周期: 上升时间为10 µs、下降时间为10 µs的快速分量和20 µs的慢速分量组成^[94].

Fig. 4. PN heterojunction photodetector based on photogating effect: (a) Schematic device structure of PbI₂/WS₂ photodetector fabricated on SiO₂/Si substrate; (b) time-resolved photoresponse of PbI₂/WS₂ phototransistors^[89]; (c) schematic diagram of the multi-electrode WSe₂/SnS₂ vdW heterostructure backgate device; (d) schematic diagram of WSe₂/SnS₂ heterostructure band structure and photoexcitation, interlayer relaxation process in WSe₂/SnS₂ heterojunction^[90]; (e) schematic illustration of the BP on WSe₂ photodetector with photogate structure; (f) the dependence of the photogain $ G $ and detectivity $ {D}^{*} $ on the different wavelength illumination at 1 mW/cm² incident illumination power density and 0.5 V bias^[93]; (g) schematic illustration of the device in the dark under 637 nm illumination; (h) a conductive path for V_tg is formed between side top-gate electrode and overlapped region; (i) a single modulation cycle The rise time is ≈10 µs The fall time consists of a fast component of ≈10 µs and a slow component of ≈ 20 µs^[94].

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图 5 基于光栅效应的光电探测器新结构　(a)器件结构示意图; (b)器件结构能带图

Fig. 5. New structure of photodetector based on photogating effect: (a) Schematic diagram of device structure; (b) sche-matic diagram of energy band structure

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表 1 基于石墨烯异质结(Gr)的光栅局域调控光电探测器

Table 1. Graphene(Gr)-based photodetectors with grating photogating.

Material	Responsivity/(A·W^–1)	Gain	Response time/ms	Detection range/nm	Ref.
Gr/MoSe₂	1.3 × 10⁴	—	22000.0	550	[83]
Gr/MoTe₂	970.82	4.69 × 10⁸	78.0	1064	[86]
Gr/ReS₂	7 × 10⁵	—	30.0	550 nm	[85]
Gr/WS₂	950	—	—	340–680 nm	[84]
Gr/MoS₂	10⁷	10⁸	—	650	[87]
Gr/BP	55.75	—	36.0	655	[82]
Gr/BiI₃	6 × 10⁶	—	8.0	532	[88]
Gr/PbSe	6613	7824	25.0	—	[16]
Gr/Bi₂Te₃	35	83	8.7	532—1550	[78]
Gr/MoS₂	5 × 10⁸	—	—	635	[77]
Gr/Bi₂Se₃	8.18	—	—	near-IR 750—2500	[38]

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