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In recent years, due to their unique physical, chemical and electronic properties, two-dimensional materials have received more and more researchers’ attention. In particular, the excellent optoelectronic properties and transport properties of two-dimensional materials such as graphene, black phosphorous and transition metal sulfide materials make them have broad application prospects in the field of next-generation optoelectronic devices. In this article, we will mainly introduce the advantages of two-dimensional materials in the field of photodetection, outline the basic principles and parameters of photodetectors, focus on the difference between the grating effect and the traditional photoconductive effect, and the reasons and characteristics of improving optical gain and optical responsivity. Then we review the latest developments and applications of grating local control in photodetectors, and finally summarize the problems faced by the photodetectors of this kind and their prospects for the future.
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Keywords:
- two-dimensional material /
- photoelectric detection /
- photogating effect /
- heterojunction /
- built-in electric field
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图 1 光栅效应特性 (a) 光栅效应示意图[39]; (b) 光照后, 转移特性曲线
${I}_{\mathrm{d}\mathrm{s}}\text-{V}_{\mathrm{g}}$ , 其中, 黑线、红线和蓝线分别代表暗电流、光栅效应下的光电流以及光栅效应和光电导效应的叠加的光电流; (c)光栅效应器件中的能带排布示意图[44].Fig. 1. The characteristics of the photogating effect: (a) Schematic diagram of the photogating effect[39]; (b) the
${I}_{\mathrm{d}\mathrm{s}}\text-{V}_{\mathrm{g}}$ transfer chara-cteristic curve after illumination. The black line, red line and blue line represent dark current, photocurrent of photogating effect, the superimposed photocurrent of photogating effect and photoconductive effect, respectively; (c) schematic diagram of band arrangement in photogating effect devices[44].图 2 单一二维材料光电探测器 (a) 双层石墨烯异质结中的光激发热载流子隧穿[6]; (b) p型轻掺杂Si/SiO2衬底上的石墨烯光电探测器的示意图[55]; (c) p型InSb衬底上石墨烯场效应晶体管的示意图[59]; (d) 电荷陷阱模型和简化的能带图[40]; (e) 光响应度与顶栅Vtg的关系[65]; (f) 不同衬底下的光响应度[58]; (g) 在不同入射功率下, 在最大跨导附近实现最大光电流[35]; (h) 光电流与时间的关系[67].
Fig. 2. Single two-dimensional material photodetector: (a) Photoexcited hot carrier tunnelling in graphene double-layer heterostructures[6]; (b) schematic diagram of the graphene photodetector on lightly p-doped silicon/SiO2 substrate[55]; (c) schematic diagram of the InSb-based graphene field effect transistor (FET)[59]; (d) charge trapping model and simplified energy band diagram[40]; (e) the relationship between photoresponsivity and Vtg[65]; (f) photoresponsivity under different substrates[58]; (g) the maximum photocurrent is realized near the maximum transconductance at different incident power[35]; (h) the relationship between photocurrent and time[67].
图 3 石墨烯异质结光电探测器: (a) 石墨烯/ MoS2异质结光电探测器的示意图; (b) 石墨烯/Bi2Te3异质结光电探测器的示意图; (c) 石墨烯/BP异质结光电探测器的示意图; (d)光响应度与光照强度的关系; (e)光响应度与波长的关系(VD = –3 V, VG = –30 V); (f)在波长为980 nm, 光电流和光响应随入射光强的关系 (VDS = 1 V, VG = 0 V).
Fig. 3. The photodetectors based on graphene heterostructures: (a) Schematic of device architecture graphene/MoS2 photodetector[77]; (b) schematic of the heterostructure phototransistor device[78]; (c) graphene/BP heterostructure photodetector[82]; (d) the relationship between photoresponsivity and light intensity[89]; (e) responsivity as a function of the wavelength (VD = –3 V, VG = –30 V)[85]; (f) photocurrent and photoresponsivity versus incident light power at 980 nm. (VDS = 1 V, VG = 0 V)[86].
图 4 基于光栅效应的PN异质结光电探测器 (a) PbI2/WS2异质结构光电探测器; (b) PbI2/WS2光电探测器的光响应时间[89]; (c) WSe2 /SnS2多电极异质结构背栅器件的示意图; (d) WSe2/SnS2异质结的能带结构和光激发、层间弛豫过程的示意图[90]; (e)基于光栅效应的WSe2/BP光电探测器示意图; (f) 在1 mW/cm2的入射功率密度和0.5 V偏置下, 光增益G和探测率D对不同波长照明的依赖关系[93]; (g) 在637 nm光照下器件的示意图; (h)顶栅电极侧面和重叠区域之间形成导电通道Vtg; (i)一个调制周期: 上升时间为10 µs、下降时间为10 µs的快速分量和20 µs的慢速分量组成[94].
Fig. 4. PN heterojunction photodetector based on photogating effect: (a) Schematic device structure of PbI2/WS2 photodetector fabricated on SiO2/Si substrate; (b) time-resolved photoresponse of PbI2/WS2 phototransistors[89]; (c) schematic diagram of the multi-electrode WSe2/SnS2 vdW heterostructure backgate device; (d) schematic diagram of WSe2/SnS2 heterostructure band structure and photoexcitation, interlayer relaxation process in WSe2/SnS2 heterojunction[90]; (e) schematic illustration of the BP on WSe2 photodetector with photogate structure; (f) the dependence of the photogain
$ G $ and detectivity$ {D}^{*} $ on the different wavelength illumination at 1 mW/cm2 incident illumination power density and 0.5 V bias[93]; (g) schematic illustration of the device in the dark under 637 nm illumination; (h) a conductive path for Vtg is formed between side top-gate electrode and overlapped region; (i) a single modulation cycle The rise time is ≈10 µs The fall time consists of a fast component of ≈10 µs and a slow component of ≈ 20 µs[94].表 1 基于石墨烯异质结(Gr)的光栅局域调控光电探测器
Table 1. Graphene(Gr)-based photodetectors with grating photogating.
Material Responsivity/(A·W–1) Gain Response time/ms Detection range/nm Ref. Gr/MoSe2 1.3 × 104 — 22000.0 550 [83] Gr/MoTe2 970.82 4.69 × 108 78.0 1064 [86] Gr/ReS2 7 × 105 — 30.0 550 nm [85] Gr/WS2 950 — — 340–680 nm [84] Gr/MoS2 107 108 — 650 [87] Gr/BP 55.75 — 36.0 655 [82] Gr/BiI3 6 × 106 — 8.0 532 [88] Gr/PbSe 6613 7824 25.0 — [16] Gr/Bi2Te3 35 83 8.7 532—1550 [78] Gr/MoS2 5 × 108 — — 635 [77] Gr/Bi2Se3 8.18 — — near-IR 750—2500 [38] -
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