钝化层对背沟道刻蚀型IGZO薄膜晶体管的影响

王琛; 温盼; 彭聪; 徐萌; 陈龙龙; 李喜峰; 张建华

doi:10.7498/aps.72.20222272

摘要

本文制备了氧化硅、聚酰亚胺以及氧化硅-聚酰亚胺堆叠结构钝化层的非晶铟镓锌氧背沟道刻蚀型薄膜晶体管. 与传统氧化硅钝化层薄膜晶体管相比, 聚酰亚胺钝化层薄膜晶体管的电学特性大幅提高, 场效应迁移率从4.7提升至22.4 cm²/(V·s), 亚阈值摆幅从1.6降低至0.28 V/decade, 电流开关比从1.1×10⁷提升至1.5×10¹⁰, 负偏压光照稳定性下的阈值电压偏移从–4.8 V下降至–0.7 V. 电学特性的改善可能是由于氢向聚酰亚胺钝化层扩散减少了背沟道的浅能级缺陷.

关键词:

Abstract

Amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFT) are widely used in active-matrix displays because of their excellent stability, low off-current, high field-effect mobility, and good process compatibility. Among IGZO TFT device structures, back channel etching (BCE) is favorable due to low production cost, short channel length and small SD-to-gate capacitance. In this work, prepared are the BCE IGZO TFTs each with the passivation layer of silicon dioxide (SiO₂), polyimide (PI) or SiO₂-PI stacked structure to study their difference in back channel hydrogen impurity and diffusion behavior. Comparing with the conventional SiO₂ passivation BCE TFT, the performance of PI passivation TFT is improved greatly, specifically, the saturation field effect mobility increases from 4.7 to 22.4 cm²/(V·s), subthreshold swing decreases from 1.6 to 0.28 V/decade, and the an on-off current ratio rises dramatically from 1.1×10⁷ to 1.5×10¹⁰. After the SiO₂ passivation layer is substituted with PI, the I_off decreases from 10^–11 A to 10^–14 A, which indicates that there exist less shallow-level donor states of hydrogen impurities, which might be explained by the following three mechanisms: first, in the film formation process of PI, the direct incorporation of hydrogen-related radicals from SiH₄ precursor into the back channel is avoided; second, the hydrogen content in the PI film is lower and harder to diffuse into the back channel; third, the hydrogen impurity of back channel that is introduced by the H₂O₂-based etchant in the SD etching process could diffuse more easily toward the PI layer. The TFTs with PI passivation layer also shows the less electrical degradation after the annealing treatment at 380 ℃ and better output performance, which confirms less defects and higher quality of the back channel. The bias stabilities of PI devices are improved comprehensively, especially negative bias illumination stability with the threshold voltage shifting from –4.8 V to –0.7 V, which might be attributed to the disappearance of hydrogen interstitial sites and hydrogen vacancies that are charged positively in the back channel. The PI passivation layer is effective to avoid back channel hydrogen impurities of BCE TFT and promises to have broad applications in the display industry.

Keywords:

作者及机构信息

1.
上海大学材料科学与工程学院, 上海　200444

2.
上海大学, 新型显示技术及应用集成教育部重点实验室, 上海　200072

通信作者: 李喜峰, lixifeng@shu.edu.cn

基金项目: 国家自然科学基金(批准号: 62174105, 61674101)和上海市教育发展基金会和上海市教委(批准号: 18SG38)资助的课题.

Authors and contacts

1.
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China

2.
Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072, China

Corresponding author: Li Xi-Feng, lixifeng@shu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 62174105, 61674101) and the Shanghai Education Development Foundation and Shanghai Municipal Education Commission, China (Grant No. 18SG38).

文章全文 : translate this paragraph

参考文献

[1]	朱乐永, 高娅娜, 张建华, 李喜峰 2015 物理学报 64 108501 Google Scholar Zhu L Y, Gao Y N, Zhang J H, Li X F J 2015 Acta Phys. Sin. 64 108501 Google Scholar
[2]	He P, Hong R, Li G, Zou X, Hu W, Lan L, Iñíguez B, Liao L, Liu X J 2022 IEEE Trans. Electron Devices 43 1894 Google Scholar
[3]	Kwon J Y, Lee D J, Kim K B 2011 Electron. Mater. Lett. 7 1 Google Scholar
[4]	Kang D H, Kang I, Ryu S H, Jang J 2011 IEEE Electron Device Lett. 32 1385 Google Scholar
[5]	Bonneville D B, Miller J W, Smyth C, Mascher P, Bradley J D 2021 Appl. Sci. 11 2110 Google Scholar
[6]	Chowdhury M D H, Mativenga M, Um J G, Mruthyunjaya R K, Heiler G N, Tredwell T J, Jang J 2015 IEEE Trans. Electron Devices 62 869 Google Scholar
[7]	Jeong S G, Jeong H J, Choi W H, Kim K, Park J S 2020 IEEE Trans. Electron Devices 67 4250 Google Scholar
[8]	LI G, YANG B-R, LIU C, Lee C Y, Tseng C Y, Lo C C, Xu N 2015 J. Phys. D. 48 475107 Google Scholar
[9]	郭海泉, 杨正华, 高连勋 2021 应用化学 38 1119 Google Scholar Guo H Q, Yang Z H, Gao L X 2021 Chinese J. Appl. Chem. 38 1119 Google Scholar
[10]	Sezer H A, Celik B A 2021 SN Appl. Sci. 1 22 Google Scholar
[11]	Nakata M, Ochi M, Tsuji H, Takei T, Miyakawa M, Yamamoto T, Fujisaki Y 2019 J. Appl. Phys. 58 090602 Google Scholar
[12]	Xu H, Lan L, Xu M, Zou J, Wang L, Wang D, Peng J High 2011 Appl. Phys. Lett. 99 253501 Google Scholar
[13]	Ide K, Nomura K, Hosono H, Kamiya T 2019 Phys. Status Solidi 216 1800372 Google Scholar
[14]	Hanyu Y, Domen K, Nomura K, Hiramatsu H, Kumomi H, Hosono H, Kamiya T 2013 Appl. Phys. Lett. 103 202114 Google Scholar
[15]	Li M, Huang D, Li M, Zhang W, Xu H, Zou J, Xu M 2019 IEEE Trans. Electron Devices 66 3854 Google Scholar
[16]	Han K L, Cho H S, Ok K C, Oh S, Park J S 2018 Electron. Mater. Lett. 14 749 Google Scholar
[17]	Flack W W, Flores G E, Christensen L D H, Newman G 1996 Optical Microlithography IX. SPIE (Santa Clara CA)p169
[18]	邵龑, 丁士进 2018 物理学报 67 098502 Google Scholar Shao Y, Ding S J 2018 Acta Phys. Sin. 67 098502 Google Scholar
[19]	Kang Y, Ahn B D, Song J H, Mo Y G, Nahm H H, Han S, Jeong J K 2015 Adv. Electron. Mater. 1 1400006 Google Scholar
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[22]	Nomura K, Kamiya T, Hosono H 2012 ECS J. Solid State Sci. Technol. 2 5 Google Scholar

施引文献

图 1 SiO₂钝化层(a)、SiO₂-PI钝化层(b)、PI钝化层(c)BCE TFT的阵列的光学显微镜俯视图; SiO₂钝化层(d)、SiO₂-PI钝化层(e)、PI钝化层(f)BCE TFT的器件结构示意图

Fig. 1. Top view of the array of BCE TFT with the passivation layer of SiO₂ (a), SiO₂-PI (b) and PI (c) taken by optical microscopy; schematic diagram of the BCE TFT with the passivation layer of SiO₂ (d), SiO₂-PI (e) and PI (f).

下载: 全尺寸图片幻灯片

图 2 SiO₂钝化层(a)、SiO₂-PI钝化层(c)、PI钝化层(e)BCE TFT制备后的与380 ℃退火后的转移特性; SiO₂钝化层(b)、SiO₂-PI钝化层(d)、PI钝化层(f)BCE TFT在5.0 V, 7.5 V和10.0 V栅压下的输出特性

Fig. 2. Transfer characteristics of as-fabricated and 380 ℃-annealed BCE TFT with the passivation layer of SiO₂ (a), SiO₂-PI (c) and PI (e); output characteristics under the V_g of 5.0 V, 7.5 V or 10.0 V of BCE TFT with the passivation layer of SiO₂ (b), SiO₂-PI (d) and PI (f).

下载: 全尺寸图片幻灯片

图 3 背沟道的X射线光子能谱(XPS)O 1s分峰图像(a); SiO₂钝化层(b)、SiO₂-PI钝化层(c)、PI钝化层(d)BCE TFT的背沟道化学动力学过程示意图

Fig. 3. Deconvoluted O 1s spectra of back channel (a); schematic diagrams of the chemical dynamic process of the back channel of BCE TFT with the passivation layer of SiO₂ (b), SiO₂-PI (c) and PI (d).

下载: 全尺寸图片幻灯片

图 4 偏压稳定性, V_g = ±20 V, V_d = 0.1 V SiO₂钝化层(a)或PI钝化层(b) BCE TFT的负偏压稳定性(NBS); SiO₂钝化层(c)或PI钝化层(d) BCE TFT的正偏压稳定性(PBS); SiO₂钝化层(e)或PI钝化层(f) BCE TFT的负偏压光照稳定性(NBIS)

Fig. 4. Bias stability, V_g = ±20 V, V_d = 0.1 V: NBS of BCE TFT with the passivation layer of SiO₂ (a) and PI (b); PBS of BCE TFT with the passivation layer of SiO₂ (c) and PI (d); NBIS of BCE TFT with the passivation layer of SiO₂ (e) and PI (f).

下载: 全尺寸图片幻灯片

图 5 PI钝化层BCE TFT在底部光照(a)或顶部光照(b)下的转移特性退化; SiO₂钝化层BCE TFT在底部光照(c)或顶部光照(d)下的转移特性退化

Fig. 5. Bottom illumination (a) and top illumination (b) induced degradation of transfer characteristics of BCE TFT with the passivation layer of PI; bottom illumination (c) and top illumination (d) induced degradation of transfer characteristics of BCE TFT with the passivation layer of SiO₂.

下载: 全尺寸图片幻灯片

[1]	朱乐永, 高娅娜, 张建华, 李喜峰 2015 物理学报 64 108501 Google Scholar Zhu L Y, Gao Y N, Zhang J H, Li X F J 2015 Acta Phys. Sin. 64 108501 Google Scholar
[2]	He P, Hong R, Li G, Zou X, Hu W, Lan L, Iñíguez B, Liao L, Liu X J 2022 IEEE Trans. Electron Devices 43 1894 Google Scholar
[3]	Kwon J Y, Lee D J, Kim K B 2011 Electron. Mater. Lett. 7 1 Google Scholar
[4]	Kang D H, Kang I, Ryu S H, Jang J 2011 IEEE Electron Device Lett. 32 1385 Google Scholar
[5]	Bonneville D B, Miller J W, Smyth C, Mascher P, Bradley J D 2021 Appl. Sci. 11 2110 Google Scholar
[6]	Chowdhury M D H, Mativenga M, Um J G, Mruthyunjaya R K, Heiler G N, Tredwell T J, Jang J 2015 IEEE Trans. Electron Devices 62 869 Google Scholar
[7]	Jeong S G, Jeong H J, Choi W H, Kim K, Park J S 2020 IEEE Trans. Electron Devices 67 4250 Google Scholar
[8]	LI G, YANG B-R, LIU C, Lee C Y, Tseng C Y, Lo C C, Xu N 2015 J. Phys. D. 48 475107 Google Scholar
[9]	郭海泉, 杨正华, 高连勋 2021 应用化学 38 1119 Google Scholar Guo H Q, Yang Z H, Gao L X 2021 Chinese J. Appl. Chem. 38 1119 Google Scholar
[10]	Sezer H A, Celik B A 2021 SN Appl. Sci. 1 22 Google Scholar
[11]	Nakata M, Ochi M, Tsuji H, Takei T, Miyakawa M, Yamamoto T, Fujisaki Y 2019 J. Appl. Phys. 58 090602 Google Scholar
[12]	Xu H, Lan L, Xu M, Zou J, Wang L, Wang D, Peng J High 2011 Appl. Phys. Lett. 99 253501 Google Scholar
[13]	Ide K, Nomura K, Hosono H, Kamiya T 2019 Phys. Status Solidi 216 1800372 Google Scholar
[14]	Hanyu Y, Domen K, Nomura K, Hiramatsu H, Kumomi H, Hosono H, Kamiya T 2013 Appl. Phys. Lett. 103 202114 Google Scholar
[15]	Li M, Huang D, Li M, Zhang W, Xu H, Zou J, Xu M 2019 IEEE Trans. Electron Devices 66 3854 Google Scholar
[16]	Han K L, Cho H S, Ok K C, Oh S, Park J S 2018 Electron. Mater. Lett. 14 749 Google Scholar
[17]	Flack W W, Flores G E, Christensen L D H, Newman G 1996 Optical Microlithography IX. SPIE (Santa Clara CA)p169
[18]	邵龑, 丁士进 2018 物理学报 67 098502 Google Scholar Shao Y, Ding S J 2018 Acta Phys. Sin. 67 098502 Google Scholar
[19]	Kang Y, Ahn B D, Song J H, Mo Y G, Nahm H H, Han S, Jeong J K 2015 Adv. Electron. Mater. 1 1400006 Google Scholar
[20]	Noh H K, Park J S, Chang K J 2013 J. Appl. Phys. 113 063712 Google Scholar
[21]	Choi S H, Jang J H, Kim J J, Han M K 2012 IEEE Electron Device Lett. 33 381 Google Scholar
[22]	Nomura K, Kamiya T, Hosono H 2012 ECS J. Solid State Sci. Technol. 2 5 Google Scholar

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钝化层对背沟道刻蚀型IGZO薄膜晶体管的影响